JP2004207314A - 膜改質の終点検出方法、その終点検出装置及び電子ビーム処理装置 - Google Patents

膜改質の終点検出方法、その終点検出装置及び電子ビーム処理装置 Download PDF

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Publication number
JP2004207314A
JP2004207314A JP2002371587A JP2002371587A JP2004207314A JP 2004207314 A JP2004207314 A JP 2004207314A JP 2002371587 A JP2002371587 A JP 2002371587A JP 2002371587 A JP2002371587 A JP 2002371587A JP 2004207314 A JP2004207314 A JP 2004207314A
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JP
Japan
Prior art keywords
end point
electron beam
film
processing
amount
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002371587A
Other languages
English (en)
Japanese (ja)
Inventor
Tadashi Onishi
正 大西
Manabu Hama
学 濱
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2002371587A priority Critical patent/JP2004207314A/ja
Priority to TW092135443A priority patent/TW200414333A/zh
Priority to US10/739,019 priority patent/US6903800B2/en
Priority to CNB2003101211995A priority patent/CN100511619C/zh
Priority to KR1020030096184A priority patent/KR100576402B1/ko
Publication of JP2004207314A publication Critical patent/JP2004207314A/ja
Priority to US11/109,666 priority patent/US20050196712A1/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/248—Components associated with the control of the tube
    • H01J2237/2482—Optical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30466—Detecting endpoint of process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3156—Curing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Formation Of Insulating Films (AREA)
JP2002371587A 2002-12-24 2002-12-24 膜改質の終点検出方法、その終点検出装置及び電子ビーム処理装置 Pending JP2004207314A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2002371587A JP2004207314A (ja) 2002-12-24 2002-12-24 膜改質の終点検出方法、その終点検出装置及び電子ビーム処理装置
TW092135443A TW200414333A (en) 2002-12-24 2003-12-15 Film-processing method and film-processing apparatus
US10/739,019 US6903800B2 (en) 2002-12-24 2003-12-19 Film-processing method and film-processing apparatus
CNB2003101211995A CN100511619C (zh) 2002-12-24 2003-12-22 膜处理方法和膜处理装置
KR1020030096184A KR100576402B1 (ko) 2002-12-24 2003-12-24 막 처리 방법 및 막 처리 장치
US11/109,666 US20050196712A1 (en) 2002-12-24 2005-04-20 Film-processing method and film-processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002371587A JP2004207314A (ja) 2002-12-24 2002-12-24 膜改質の終点検出方法、その終点検出装置及び電子ビーム処理装置

Publications (1)

Publication Number Publication Date
JP2004207314A true JP2004207314A (ja) 2004-07-22

Family

ID=32677199

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002371587A Pending JP2004207314A (ja) 2002-12-24 2002-12-24 膜改質の終点検出方法、その終点検出装置及び電子ビーム処理装置

Country Status (5)

Country Link
US (2) US6903800B2 (2)
JP (1) JP2004207314A (2)
KR (1) KR100576402B1 (2)
CN (1) CN100511619C (2)
TW (1) TW200414333A (2)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007059617A (ja) * 2005-08-24 2007-03-08 Toshiba Corp 半導体装置の製造方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1517184A1 (en) * 2003-09-18 2005-03-23 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2013031509A1 (en) 2011-08-26 2013-03-07 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, electronic device, lighting device, and method for manufacturing the light-emitting device
US9472776B2 (en) 2011-10-14 2016-10-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing sealed structure including welded glass frits
US8951384B2 (en) * 2011-10-20 2015-02-10 Applied Materials, Inc. Electron beam plasma source with segmented beam dump for uniform plasma generation
US20130098552A1 (en) * 2011-10-20 2013-04-25 Applied Materials, Inc. E-beam plasma source with profiled e-beam extraction grid for uniform plasma generation
JP2013101923A (ja) 2011-10-21 2013-05-23 Semiconductor Energy Lab Co Ltd 分散組成物の加熱方法、及びガラスパターンの形成方法
CN103236515B (zh) * 2013-04-07 2015-11-25 力柏时代锂动力科技（北京）有限公司 极片制造设备和极片制造方法
US11222783B2 (en) * 2017-09-19 2022-01-11 Taiwan Semiconductor Manufacturing Co., Ltd. Using cumulative heat amount data to qualify hot plate used for postexposure baking

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06103687B2 (ja) * 1988-08-12 1994-12-14 大日本スクリーン製造株式会社 回転式表面処理方法および回転式表面処理における処理終点検出方法、ならびに回転式表面処理装置
JPH0316125A (ja) * 1989-03-30 1991-01-24 Mitsubishi Electric Corp 半導体装置の製造方法
US5167760A (en) * 1989-11-14 1992-12-01 Intel Corporation Etchback process for tungsten contact/via filling
US5131752A (en) * 1990-06-28 1992-07-21 Tamarack Scientific Co., Inc. Method for film thickness endpoint control
JPH04355917A (ja) * 1990-10-12 1992-12-09 Seiko Epson Corp 半導体装置の製造装置
JP3255469B2 (ja) * 1992-11-30 2002-02-12 三菱電機株式会社 レーザ薄膜形成装置
US5442439A (en) * 1993-04-21 1995-08-15 Kaiser Optical Systems, Inc. Spectrograph with multiplexing of different wavelength regions onto a single opto-electric detector array
US5414267A (en) * 1993-05-26 1995-05-09 American International Technologies, Inc. Electron beam array for surface treatment
US5570175A (en) * 1994-03-07 1996-10-29 Ceram Optec Industries Inc. Method for determination of degree of molecular dissociation in plasma using combined electrostatic measurement and emission spectroscopy
US5485091A (en) * 1995-05-12 1996-01-16 International Business Machines Corporation Contactless electrical thin oxide measurements
JP3197484B2 (ja) * 1995-05-31 2001-08-13 シャープ株式会社 フォトマスク及びその製造方法
US7026634B2 (en) * 2001-06-28 2006-04-11 E-Beam & Light, Inc. Method and apparatus for forming optical materials and devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007059617A (ja) * 2005-08-24 2007-03-08 Toshiba Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
CN100511619C (zh) 2009-07-08
CN1510720A (zh) 2004-07-07
TW200414333A (en) 2004-08-01
TWI320199B (2) 2010-02-01
US6903800B2 (en) 2005-06-07
US20040131351A1 (en) 2004-07-08
KR20040058053A (ko) 2004-07-03
US20050196712A1 (en) 2005-09-08
KR100576402B1 (ko) 2006-05-03

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