TW200414333A - Film-processing method and film-processing apparatus - Google Patents

Film-processing method and film-processing apparatus Download PDF

Info

Publication number
TW200414333A
TW200414333A TW092135443A TW92135443A TW200414333A TW 200414333 A TW200414333 A TW 200414333A TW 092135443 A TW092135443 A TW 092135443A TW 92135443 A TW92135443 A TW 92135443A TW 200414333 A TW200414333 A TW 200414333A
Authority
TW
Taiwan
Prior art keywords
thin film
electron beam
film
processing
end point
Prior art date
Application number
TW092135443A
Other languages
English (en)
Chinese (zh)
Other versions
TWI320199B (2
Inventor
Tadashi Onishi
Manabu Hama
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200414333A publication Critical patent/TW200414333A/zh
Application granted granted Critical
Publication of TWI320199B publication Critical patent/TWI320199B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/248—Components associated with the control of the tube
    • H01J2237/2482—Optical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30466—Detecting endpoint of process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3156—Curing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Formation Of Insulating Films (AREA)
TW092135443A 2002-12-24 2003-12-15 Film-processing method and film-processing apparatus TW200414333A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002371587A JP2004207314A (ja) 2002-12-24 2002-12-24 膜改質の終点検出方法、その終点検出装置及び電子ビーム処理装置

Publications (2)

Publication Number Publication Date
TW200414333A true TW200414333A (en) 2004-08-01
TWI320199B TWI320199B (2) 2010-02-01

Family

ID=32677199

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092135443A TW200414333A (en) 2002-12-24 2003-12-15 Film-processing method and film-processing apparatus

Country Status (5)

Country Link
US (2) US6903800B2 (2)
JP (1) JP2004207314A (2)
KR (1) KR100576402B1 (2)
CN (1) CN100511619C (2)
TW (1) TW200414333A (2)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1517184A1 (en) * 2003-09-18 2005-03-23 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007059617A (ja) * 2005-08-24 2007-03-08 Toshiba Corp 半導体装置の製造方法
WO2013031509A1 (en) 2011-08-26 2013-03-07 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, electronic device, lighting device, and method for manufacturing the light-emitting device
US9472776B2 (en) 2011-10-14 2016-10-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing sealed structure including welded glass frits
US8951384B2 (en) * 2011-10-20 2015-02-10 Applied Materials, Inc. Electron beam plasma source with segmented beam dump for uniform plasma generation
US20130098552A1 (en) * 2011-10-20 2013-04-25 Applied Materials, Inc. E-beam plasma source with profiled e-beam extraction grid for uniform plasma generation
JP2013101923A (ja) 2011-10-21 2013-05-23 Semiconductor Energy Lab Co Ltd 分散組成物の加熱方法、及びガラスパターンの形成方法
CN103236515B (zh) * 2013-04-07 2015-11-25 力柏时代锂动力科技（北京）有限公司 极片制造设备和极片制造方法
US11222783B2 (en) * 2017-09-19 2022-01-11 Taiwan Semiconductor Manufacturing Co., Ltd. Using cumulative heat amount data to qualify hot plate used for postexposure baking

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06103687B2 (ja) * 1988-08-12 1994-12-14 大日本スクリーン製造株式会社 回転式表面処理方法および回転式表面処理における処理終点検出方法、ならびに回転式表面処理装置
JPH0316125A (ja) * 1989-03-30 1991-01-24 Mitsubishi Electric Corp 半導体装置の製造方法
US5167760A (en) * 1989-11-14 1992-12-01 Intel Corporation Etchback process for tungsten contact/via filling
US5131752A (en) * 1990-06-28 1992-07-21 Tamarack Scientific Co., Inc. Method for film thickness endpoint control
JPH04355917A (ja) * 1990-10-12 1992-12-09 Seiko Epson Corp 半導体装置の製造装置
JP3255469B2 (ja) * 1992-11-30 2002-02-12 三菱電機株式会社 レーザ薄膜形成装置
US5442439A (en) * 1993-04-21 1995-08-15 Kaiser Optical Systems, Inc. Spectrograph with multiplexing of different wavelength regions onto a single opto-electric detector array
US5414267A (en) * 1993-05-26 1995-05-09 American International Technologies, Inc. Electron beam array for surface treatment
US5570175A (en) * 1994-03-07 1996-10-29 Ceram Optec Industries Inc. Method for determination of degree of molecular dissociation in plasma using combined electrostatic measurement and emission spectroscopy
US5485091A (en) * 1995-05-12 1996-01-16 International Business Machines Corporation Contactless electrical thin oxide measurements
JP3197484B2 (ja) * 1995-05-31 2001-08-13 シャープ株式会社 フォトマスク及びその製造方法
US7026634B2 (en) * 2001-06-28 2006-04-11 E-Beam & Light, Inc. Method and apparatus for forming optical materials and devices

Also Published As

Publication number Publication date
CN100511619C (zh) 2009-07-08
CN1510720A (zh) 2004-07-07
TWI320199B (2) 2010-02-01
US6903800B2 (en) 2005-06-07
US20040131351A1 (en) 2004-07-08
JP2004207314A (ja) 2004-07-22
KR20040058053A (ko) 2004-07-03
US20050196712A1 (en) 2005-09-08
KR100576402B1 (ko) 2006-05-03

Similar Documents

Publication Publication Date Title
US6200023B1 (en) Method for determining the temperature in a thermal processing chamber
US6750976B2 (en) Device for manufacturing semiconductor device and method of manufacturing the same
TW200414333A (en) Film-processing method and film-processing apparatus
JP3039911B2 (ja) 基板表面の有機物汚染の評価装置および方法
JP2001291655A (ja) 疎水化処理の評価方法、レジストパターンの形成方法及びレジストパターン形成システム
US20080236747A1 (en) Gas analyzing apparatus and substrate processing system
CN120099495B (zh) 一种磁吸治具金属化镀膜方法
CN113699481A (zh) 负载金银纳米膜的复合结构阵列及其制备方法和应用
TWI343474B (en) Methods and apparatus for determining the temperature of a substrate
US5284547A (en) Plasma-process system with batch scheme
JP2004028787A (ja) 全反射蛍光ｘ線分析方法、全反射蛍光ｘ線分析前処理装置及び全反射蛍光ｘ線分析装置
TW200415717A (en) Thin film processing method and thin film processing system
Lock et al. Preparation of ultra thin polystyrene, polypropylene and polyethylene films on Si substrate using spin coating technology
JP4439824B2 (ja) 熱処理装置
Zhao et al. A spectroscopic immersion ellipsometry study of SiO2-Si interface roughness for electron cyclotron resonance plasma and thermally oxidized Si surfaces
JP2754823B2 (ja) 膜厚測定方法
EP1577636B1 (en) Method and apparatus for measuring thickness of thin film formed on substrate
Shannon et al. Spatially resolved fluorine actinometry
Chen et al. X-ray photoelectron spectroscopy of gate-quality silicon oxynitride films produced by annealing plasma-nitrided Si (100) in nitrous oxide
JPH059728A (ja) 薄膜形成方法
TWI873384B (zh) 半導體處理腔室中之原子氧偵測
US20200408706A1 (en) X-ray analysis system, x-ray analysis device, and vapor phase decomposition device
CN100380593C (zh) 薄膜处理方法和薄膜处理系统
JPH10267869A (ja) 仕事関数またはイオン化ポテンシャル測定装置
Irene et al. Measurement of N in nitrided oxides using spectroscopic immersion ellipsometry

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees