JP2005311299A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number: JP2005311299A
Authority: JP; Japan
Prior art keywords: film; insulating film; opening; thickness; layer
Prior art date: 2004-03-26
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Withdrawn

Application number

JP2005027246A

Other languages

English (en)

Japanese (ja)

Other versions

JP2005311299A5 (2

Inventor

Kenichi Takeda

健一武田

Takeshi Fujiwara

剛藤原

Toshinori Imai

俊則今井

Takeshi Ishikawa

剛石川

Toshiyuki Mine

利之峰

Makoto Miura

真三浦

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Hitachi Ltd

Original Assignee

Hitachi Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2004-03-26

Filing date

2005-02-03

Publication date

2005-11-04

2005-02-03 Application filed by Hitachi Ltd filed Critical Hitachi Ltd

2005-02-03 Priority to JP2005027246A priority Critical patent/JP2005311299A/ja

2005-11-04 Publication of JP2005311299A publication Critical patent/JP2005311299A/ja

2007-11-08 Publication of JP2005311299A5 publication Critical patent/JP2005311299A5/ja

Status Withdrawn legal-status Critical Current

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Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Semiconductor Integrated Circuits (AREA)

JP2005027246A 2004-03-26 2005-02-03 半導体装置及びその製造方法 Withdrawn JP2005311299A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP2005027246A JP2005311299A (ja)	2004-03-26	2005-02-03	半導体装置及びその製造方法

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2004091207		2004-03-26
JP2005027246A JP2005311299A (ja)	2004-03-26	2005-02-03	半導体装置及びその製造方法

Publications (2)

Publication Number	Publication Date
JP2005311299A true JP2005311299A (ja)	2005-11-04
JP2005311299A5 JP2005311299A5 (2)	2007-11-08

Family

ID=35439659

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2005027246A Withdrawn JP2005311299A (ja)	2004-03-26	2005-02-03	半導体装置及びその製造方法

Country Status (1)

Country	Link
JP (1)	JP2005311299A (2)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2008502144A (ja) *	2004-06-04	2008-01-24	インターナショナル・ビジネス・マシーンズ・コーポレーション	金属−絶縁体−金属キャパシタ構造およびそれを形成する方法（ハードマスクを使用するアルミニウム地金配線レベルと同時に行われる金属−絶縁体−金属キャパシタの形成）
JP2008016490A (ja) *	2006-07-03	2008-01-24	Nec Electronics Corp	半導体装置
US7981761B2 (en)	2007-02-27	2011-07-19	Hitachi, Ltd.	Method of manufacturing semiconductor device having MIM capacitor
JP2013097093A (ja) *	2011-10-31	2013-05-20	Seiko Epson Corp	電気光学装置および電子機器
JP2016009845A (ja) *	2014-06-26	2016-01-18	ラピスセミコンダクタ株式会社	半導体装置の製造方法および半導体装置
CN110959188A (zh) *	2017-07-26	2020-04-03	株式会社村田制作所	电容器
JP2021077799A (ja) *	2019-11-12	2021-05-20	ローム株式会社	電子部品
CN114639655A (zh) *	2022-05-18	2022-06-17	合肥新晶集成电路有限公司	半导体器件结构及其制备方法
JP2023163540A (ja) *	2022-04-28	2023-11-10	ルネサスエレクトロニクス株式会社	半導体装置及び半導体装置の製造方法
WO2023218947A1 (ja) *	2022-05-11	2023-11-16	株式会社デンソー	信号伝送デバイス

2005
- 2005-02-03 JP JP2005027246A patent/JP2005311299A/ja not_active Withdrawn

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2008502144A (ja) *	2004-06-04	2008-01-24	インターナショナル・ビジネス・マシーンズ・コーポレーション	金属−絶縁体−金属キャパシタ構造およびそれを形成する方法（ハードマスクを使用するアルミニウム地金配線レベルと同時に行われる金属−絶縁体−金属キャパシタの形成）
JP2008016490A (ja) *	2006-07-03	2008-01-24	Nec Electronics Corp	半導体装置
US7981761B2 (en)	2007-02-27	2011-07-19	Hitachi, Ltd.	Method of manufacturing semiconductor device having MIM capacitor
JP2013097093A (ja) *	2011-10-31	2013-05-20	Seiko Epson Corp	電気光学装置および電子機器
JP2016009845A (ja) *	2014-06-26	2016-01-18	ラピスセミコンダクタ株式会社	半導体装置の製造方法および半導体装置
US10461147B2 (en)	2014-06-26	2019-10-29	Lapis Semiconductor Co., Ltd.	Semiconductor device fabricating method and semiconductor device
CN110959188A (zh) *	2017-07-26	2020-04-03	株式会社村田制作所	电容器
CN110959188B (zh) *	2017-07-26	2023-10-03	株式会社村田制作所	电容器
JP2021077799A (ja) *	2019-11-12	2021-05-20	ローム株式会社	電子部品
JP2023163540A (ja) *	2022-04-28	2023-11-10	ルネサスエレクトロニクス株式会社	半導体装置及び半導体装置の製造方法
JP7761524B2 (ja)	2022-04-28	2025-10-28	ルネサスエレクトロニクス株式会社	半導体装置及び半導体装置の製造方法
WO2023218947A1 (ja) *	2022-05-11	2023-11-16	株式会社デンソー	信号伝送デバイス
JP2023167331A (ja) *	2022-05-11	2023-11-24	株式会社デンソー	信号伝送デバイス
JP7753975B2 (ja)	2022-05-11	2025-10-15	株式会社デンソー	信号伝送デバイス
CN114639655B (zh) *	2022-05-18	2022-09-13	合肥新晶集成电路有限公司	半导体器件结构及其制备方法
CN114639655A (zh) *	2022-05-18	2022-06-17	合肥新晶集成电路有限公司	半导体器件结构及其制备方法

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Legal Events

Date	Code	Title	Description
2007-09-22	A521	Request for written amendment filed	Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070921
2007-09-22	A621	Written request for application examination	Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070921
2007-09-22	RD02	Notification of acceptance of power of attorney	Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20070921
2009-08-25	A761	Written withdrawal of application	Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20090824