JP2005311299A5 - - Google Patents
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- Publication number
- JP2005311299A5 JP2005311299A5 JP2005027246A JP2005027246A JP2005311299A5 JP 2005311299 A5 JP2005311299 A5 JP 2005311299A5 JP 2005027246 A JP2005027246 A JP 2005027246A JP 2005027246 A JP2005027246 A JP 2005027246A JP 2005311299 A5 JP2005311299 A5 JP 2005311299A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- film
- conductor
- electrode
- intermediate insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004020 conductor Substances 0.000 claims 33
- 239000004065 semiconductor Substances 0.000 claims 22
- 238000004519 manufacturing process Methods 0.000 claims 10
- 238000005530 etching Methods 0.000 claims 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 6
- 229910045601 alloy Inorganic materials 0.000 claims 6
- 239000000956 alloy Substances 0.000 claims 6
- 229910052782 aluminium Inorganic materials 0.000 claims 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 6
- 239000011229 interlayer Substances 0.000 claims 6
- 229910052751 metal Inorganic materials 0.000 claims 6
- 239000002184 metal Substances 0.000 claims 6
- 229910052750 molybdenum Inorganic materials 0.000 claims 6
- 239000011733 molybdenum Substances 0.000 claims 6
- 150000004767 nitrides Chemical class 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 6
- 239000010936 titanium Substances 0.000 claims 6
- 229910052719 titanium Inorganic materials 0.000 claims 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 6
- 229910052721 tungsten Inorganic materials 0.000 claims 6
- 239000010937 tungsten Substances 0.000 claims 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims 4
- 239000010410 layer Substances 0.000 claims 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 2
- 239000003990 capacitor Substances 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 239000010949 copper Substances 0.000 claims 2
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims 2
- 238000000059 patterning Methods 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 1
- 230000001681 protective effect Effects 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005027246A JP2005311299A (ja) | 2004-03-26 | 2005-02-03 | 半導体装置及びその製造方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004091207 | 2004-03-26 | ||
| JP2005027246A JP2005311299A (ja) | 2004-03-26 | 2005-02-03 | 半導体装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005311299A JP2005311299A (ja) | 2005-11-04 |
| JP2005311299A5 true JP2005311299A5 (2) | 2007-11-08 |
Family
ID=35439659
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005027246A Withdrawn JP2005311299A (ja) | 2004-03-26 | 2005-02-03 | 半導体装置及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005311299A (2) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7301752B2 (en) * | 2004-06-04 | 2007-11-27 | International Business Machines Corporation | Formation of metal-insulator-metal capacitor simultaneously with aluminum metal wiring level using a hardmask |
| JP2008016490A (ja) * | 2006-07-03 | 2008-01-24 | Nec Electronics Corp | 半導体装置 |
| JP5135827B2 (ja) | 2007-02-27 | 2013-02-06 | 株式会社日立製作所 | 半導体装置及びその製造方法 |
| JP5862204B2 (ja) * | 2011-10-31 | 2016-02-16 | セイコーエプソン株式会社 | 電気光学装置および電子機器 |
| JP6342728B2 (ja) * | 2014-06-26 | 2018-06-13 | ラピスセミコンダクタ株式会社 | 半導体装置の製造方法および半導体装置 |
| CN110959188B (zh) * | 2017-07-26 | 2023-10-03 | 株式会社村田制作所 | 电容器 |
| JP2021077799A (ja) * | 2019-11-12 | 2021-05-20 | ローム株式会社 | 電子部品 |
| JP7761524B2 (ja) * | 2022-04-28 | 2025-10-28 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP7753975B2 (ja) * | 2022-05-11 | 2025-10-15 | 株式会社デンソー | 信号伝送デバイス |
| CN114639655B (zh) * | 2022-05-18 | 2022-09-13 | 合肥新晶集成电路有限公司 | 半导体器件结构及其制备方法 |
-
2005
- 2005-02-03 JP JP2005027246A patent/JP2005311299A/ja not_active Withdrawn
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