JP2005354041A5 - - Google Patents
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- Publication number
- JP2005354041A5 JP2005354041A5 JP2005130914A JP2005130914A JP2005354041A5 JP 2005354041 A5 JP2005354041 A5 JP 2005354041A5 JP 2005130914 A JP2005130914 A JP 2005130914A JP 2005130914 A JP2005130914 A JP 2005130914A JP 2005354041 A5 JP2005354041 A5 JP 2005354041A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- insulating film
- processing method
- substrate processing
- releasing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 24
- 238000003672 processing method Methods 0.000 claims 13
- 125000001153 fluoro group Chemical group F* 0.000 claims 8
- 230000001681 protective effect Effects 0.000 claims 8
- 229910052731 fluorine Inorganic materials 0.000 claims 6
- 239000007789 gas Substances 0.000 claims 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 3
- 229910052799 carbon Inorganic materials 0.000 claims 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 229910003481 amorphous carbon Inorganic materials 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 229910001873 dinitrogen Inorganic materials 0.000 claims 2
- 230000001678 irradiating effect Effects 0.000 claims 2
- 229910052786 argon Inorganic materials 0.000 claims 1
- 125000004429 atom Chemical group 0.000 claims 1
- 238000010894 electron beam technology Methods 0.000 claims 1
- 229910052743 krypton Inorganic materials 0.000 claims 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 238000005121 nitriding Methods 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 229910052724 xenon Inorganic materials 0.000 claims 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005130914A JP4555143B2 (ja) | 2004-05-11 | 2005-04-28 | 基板の処理方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004141022 | 2004-05-11 | ||
| JP2005130914A JP4555143B2 (ja) | 2004-05-11 | 2005-04-28 | 基板の処理方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005354041A JP2005354041A (ja) | 2005-12-22 |
| JP2005354041A5 true JP2005354041A5 (2) | 2008-04-10 |
| JP4555143B2 JP4555143B2 (ja) | 2010-09-29 |
Family
ID=35320470
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005130914A Expired - Fee Related JP4555143B2 (ja) | 2004-05-11 | 2005-04-28 | 基板の処理方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4555143B2 (2) |
| KR (1) | KR100887439B1 (2) |
| CN (1) | CN100485884C (2) |
| WO (1) | WO2005109483A1 (2) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4993607B2 (ja) * | 2005-06-20 | 2012-08-08 | 国立大学法人東北大学 | 層間絶縁膜および配線構造と、それらの製造方法 |
| JP5119606B2 (ja) * | 2006-03-31 | 2013-01-16 | 東京エレクトロン株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP5194393B2 (ja) * | 2006-06-23 | 2013-05-08 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
| US8318614B2 (en) | 2007-03-26 | 2012-11-27 | Tokyo Electron Limited | Method for forming silicon nitride film, method for manufacturing nonvolatile semiconductor memory device, nonvolatile semiconductor memory device and plasma apparatus |
| JP2008270706A (ja) * | 2007-03-26 | 2008-11-06 | Tokyo Electron Ltd | 窒化珪素膜および不揮発性半導体メモリ装置 |
| US8021975B2 (en) * | 2007-07-24 | 2011-09-20 | Tokyo Electron Limited | Plasma processing method for forming a film and an electronic component manufactured by the method |
| US8197913B2 (en) * | 2007-07-25 | 2012-06-12 | Tokyo Electron Limited | Film forming method for a semiconductor |
| JP2009088267A (ja) * | 2007-09-28 | 2009-04-23 | Tokyo Electron Ltd | 成膜方法、成膜装置、記憶媒体及び半導体装置 |
| TW201044462A (en) | 2009-01-22 | 2010-12-16 | Tokyo Electron Ltd | A method for manufacturing semiconductor devices |
| JP5600885B2 (ja) * | 2009-03-19 | 2014-10-08 | 凸版印刷株式会社 | 有機ｅｌ用乾燥装置 |
| JP5304759B2 (ja) * | 2010-09-15 | 2013-10-02 | 東京エレクトロン株式会社 | 成膜方法及び半導体装置 |
| JP5700513B2 (ja) * | 2010-10-08 | 2015-04-15 | 国立大学法人東北大学 | 半導体装置の製造方法および半導体装置 |
| JP2012164922A (ja) * | 2011-02-09 | 2012-08-30 | Yuutekku:Kk | 圧電体の製造方法、圧電体及び電子装置 |
| JP5364765B2 (ja) * | 2011-09-07 | 2013-12-11 | 東京エレクトロン株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP6559087B2 (ja) * | 2016-03-31 | 2019-08-14 | 東京エレクトロン株式会社 | 基板処理装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3409984B2 (ja) * | 1996-11-14 | 2003-05-26 | 東京エレクトロン株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP3469761B2 (ja) * | 1997-10-30 | 2003-11-25 | 東京エレクトロン株式会社 | 半導体デバイスの製造方法 |
| JP3429171B2 (ja) * | 1997-11-20 | 2003-07-22 | 東京エレクトロン株式会社 | プラズマ処理方法及び半導体デバイスの製造方法 |
| JP4355039B2 (ja) * | 1998-05-07 | 2009-10-28 | 東京エレクトロン株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP3921917B2 (ja) * | 2000-03-31 | 2007-05-30 | セイコーエプソン株式会社 | 微細構造体の製造方法 |
| CN101399198A (zh) * | 2001-01-22 | 2009-04-01 | 东京毅力科创株式会社 | 电子器件材料的制造方法 |
| KR20020093577A (ko) * | 2001-06-08 | 2002-12-16 | 수미도모 프리시젼 프로덕츠 캄파니 리미티드 | 기판 처리 장치 |
| JP4413556B2 (ja) * | 2003-08-15 | 2010-02-10 | 東京エレクトロン株式会社 | 成膜方法、半導体装置の製造方法 |
| JP4194521B2 (ja) * | 2004-04-07 | 2008-12-10 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
-
2005
- 2005-04-28 JP JP2005130914A patent/JP4555143B2/ja not_active Expired - Fee Related
- 2005-05-10 KR KR1020067023454A patent/KR100887439B1/ko not_active Expired - Fee Related
- 2005-05-10 CN CNB2005800110299A patent/CN100485884C/zh not_active Expired - Fee Related
- 2005-05-10 WO PCT/JP2005/008506 patent/WO2005109483A1/ja not_active Ceased
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