JP2006179871A5 - - Google Patents

Download PDF

Info

Publication number: JP2006179871A5
Authority: JP; Japan
Prior art keywords: conductive layer; etching; forming; mask; processed
Prior art date: 2005-11-07
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP2005321902A

Other languages

English (en)

Japanese (ja)

Other versions

JP4741343B2 (ja

JP2006179871A (ja

Filing date

2005-11-07

Publication date

2008-10-02

2005-11-07 Application filed filed Critical

2005-11-07 Priority to JP2005321902A priority Critical patent/JP4741343B2/ja

2005-11-07 Priority claimed from JP2005321902A external-priority patent/JP4741343B2/ja

2006-07-06 Publication of JP2006179871A publication Critical patent/JP2006179871A/ja

2008-10-02 Publication of JP2006179871A5 publication Critical patent/JP2006179871A5/ja

2011-08-03 Application granted granted Critical

2011-08-03 Publication of JP4741343B2 publication Critical patent/JP4741343B2/ja

2025-11-07 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

238000005530 etching Methods 0.000 claims 42
238000001312 dry etching Methods 0.000 claims 17
NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims 16
238000001039 wet etching Methods 0.000 claims 16
238000004519 manufacturing process Methods 0.000 claims 10
238000000034 method Methods 0.000 claims 10
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 9
229910052782 aluminium Inorganic materials 0.000 claims 9
239000004065 semiconductor Substances 0.000 claims 9
GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims 8
229910000147 aluminium phosphate Inorganic materials 0.000 claims 8
229910017604 nitric acid Inorganic materials 0.000 claims 8
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 6
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 6
239000011259 mixed solution Substances 0.000 claims 6
229910052750 molybdenum Inorganic materials 0.000 claims 6
239000011733 molybdenum Substances 0.000 claims 6
229910052759 nickel Inorganic materials 0.000 claims 3
ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 1
229910052801 chlorine Inorganic materials 0.000 claims 1
239000000460 chlorine Substances 0.000 claims 1

JP2005321902A 2004-11-29 2005-11-07 半導体装置の作製方法 Expired - Fee Related JP4741343B2 (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP2005321902A JP4741343B2 (ja)	2004-11-29	2005-11-07	半導体装置の作製方法

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP2004343320		2004-11-29
JP2004343320		2004-11-29
JP2005321902A JP4741343B2 (ja)	2004-11-29	2005-11-07	半導体装置の作製方法

Publications (3)

Publication Number	Publication Date
JP2006179871A JP2006179871A (ja)	2006-07-06
JP2006179871A5 true JP2006179871A5 (2)	2008-10-02
JP4741343B2 JP4741343B2 (ja)	2011-08-03

Family

ID=36733638

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2005321902A Expired - Fee Related JP4741343B2 (ja)	2004-11-29	2005-11-07	半導体装置の作製方法

Country Status (1)

Country	Link
JP (1)	JP4741343B2 (2)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR20090031441A (ko) *	2006-10-16	2009-03-25	미쓰이 긴조꾸 고교 가부시키가이샤	배선용 적층막 및 배선 회로
US8664097B2 (en) *	2010-09-13	2014-03-04	Semiconductor Energy Laboratory Co., Ltd.	Manufacturing method of semiconductor device
JP5819737B2 (ja) *	2012-01-20	2015-11-24	株式会社日立製作所	半導体装置
JP6171905B2 (ja)	2013-12-09	2017-08-02	富士通株式会社	半導体装置
JP6347442B2 (ja) *	2014-08-19	2018-06-27	国立研究開発法人産業技術総合研究所	炭化珪素半導体装置の製造方法
US20170278879A1 (en) *	2014-09-03	2017-09-28	Sharp Kabushiki Kaisha	Method for manufacturing metal lamination film, method for manufacturing semiconductor device, and method for manufacturing liquid crystal display device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH01255830A (ja) *	1988-04-05	1989-10-12	Nec Corp	液晶表示装置の配線の製造方法と液晶表示装置の配線
JP3392440B2 (ja) *	1991-12-09	2003-03-31	株式会社東芝	多層導体層構造デバイス
JP2000148042A (ja) *	1998-11-12	2000-05-26	Sharp Corp	電極配線基板の製造方法及び液晶表示装置の製造方法
JP4160013B2 (ja) *	1998-11-17	2008-10-01	株式会社半導体エネルギー研究所	半導体装置
JP2002111004A (ja) *	2000-10-02	2002-04-12	Toshiba Corp	アレイ基板の製造方法
JP4920140B2 (ja) *	2001-05-18	2012-04-18	ゲットナー・ファンデーション・エルエルシー	液晶表示装置及びその製造方法
WO2003036707A1 (fr) *	2001-10-22	2003-05-01	Mitsubishi Gas Chemical Company, Inc.	Procede de gravure pour film lamine en aluminium-molybdene
JP2003149674A (ja) *	2001-11-13	2003-05-21	Hitachi Ltd	液晶表示装置

2005
- 2005-11-07 JP JP2005321902A patent/JP4741343B2/ja not_active Expired - Fee Related

Publication	Publication Date	Title
JP2014212312A5 (ja)	2017-04-27	半導体装置の作製方法
JP2012023356A5 (2)	2014-07-10
JP2012216796A5 (2)	2015-04-23
JP2014135478A5 (ja)	2016-12-22	半導体装置の作製方法
JP2011029627A5 (2)	2012-06-07
JP2014007388A5 (ja)	2015-11-12	半導体装置の作製方法
JP2012160714A5 (ja)	2015-02-26	半導体装置の作製方法
JP2010239131A5 (2)	2013-04-18
JP2015188079A5 (2)	2018-04-19
JP2012084865A5 (ja)	2014-08-21	半導体装置の作製方法
JP2010080947A5 (ja)	2012-08-02	半導体装置の作製方法
JP2008270758A5 (2)	2011-04-21
JP2014132646A5 (ja)	2017-01-19	半導体装置及びその作製方法
JP2012084852A5 (2)	2014-10-16
JP2012164976A5 (ja)	2015-01-29	半導体装置の作製方法
JP2010056542A5 (2)	2012-02-02
JP2011029619A5 (ja)	2013-05-09	基板の処理方法
JP2012033896A5 (2)	2014-06-19
JP2014013810A5 (2)	2015-08-13
JP2016063227A5 (2)	2018-10-11
JP2012049516A5 (2)	2014-08-07
JP2008166748A5 (2)	2011-01-13
JP2015195371A5 (ja)	2018-04-26	トランジスタの作製方法
JP2013021305A5 (2)	2015-06-18
JP2012256874A5 (ja)	2015-06-18	半導体装置の作製方法