JP4741343B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number: JP4741343B2
Authority: JP; Japan
Prior art keywords: conductive layer; etching; wiring; etching rate; manufacturing
Prior art date: 2004-11-29
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

JP2005321902A

Other languages

English (en)

Japanese (ja)

Other versions

JP2006179871A5 (2

JP2006179871A (ja

Inventor

悟岡本

照幸藤井

英人大沼

章広石塚

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Semiconductor Energy Laboratory Co Ltd

Original Assignee

Semiconductor Energy Laboratory Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2004-11-29

Filing date

2005-11-07

Publication date

2011-08-03

2005-11-07 Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd

2005-11-07 Priority to JP2005321902A priority Critical patent/JP4741343B2/ja

2006-07-06 Publication of JP2006179871A publication Critical patent/JP2006179871A/ja

2008-10-02 Publication of JP2006179871A5 publication Critical patent/JP2006179871A5/ja

2011-08-03 Application granted granted Critical

2011-08-03 Publication of JP4741343B2 publication Critical patent/JP4741343B2/ja

2025-11-07 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

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Electrodes Of Semiconductors (AREA)
Drying Of Semiconductors (AREA)
Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Semiconductor Integrated Circuits (AREA)
Weting (AREA)
Thin Film Transistor (AREA)

JP2005321902A 2004-11-29 2005-11-07 半導体装置の作製方法 Expired - Fee Related JP4741343B2 (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP2005321902A JP4741343B2 (ja)	2004-11-29	2005-11-07	半導体装置の作製方法

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP2004343320		2004-11-29
JP2004343320		2004-11-29
JP2005321902A JP4741343B2 (ja)	2004-11-29	2005-11-07	半導体装置の作製方法

Publications (3)

Publication Number	Publication Date
JP2006179871A JP2006179871A (ja)	2006-07-06
JP2006179871A5 JP2006179871A5 (2)	2008-10-02
JP4741343B2 true JP4741343B2 (ja)	2011-08-03

Family

ID=36733638

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2005321902A Expired - Fee Related JP4741343B2 (ja)	2004-11-29	2005-11-07	半導体装置の作製方法

Country Status (1)

Country	Link
JP (1)	JP4741343B2 (2)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR20090031441A (ko) *	2006-10-16	2009-03-25	미쓰이 긴조꾸 고교 가부시키가이샤	배선용 적층막 및 배선 회로
US8664097B2 (en) *	2010-09-13	2014-03-04	Semiconductor Energy Laboratory Co., Ltd.	Manufacturing method of semiconductor device
JP5819737B2 (ja) *	2012-01-20	2015-11-24	株式会社日立製作所	半導体装置
JP6171905B2 (ja)	2013-12-09	2017-08-02	富士通株式会社	半導体装置
JP6347442B2 (ja) *	2014-08-19	2018-06-27	国立研究開発法人産業技術総合研究所	炭化珪素半導体装置の製造方法
US20170278879A1 (en) *	2014-09-03	2017-09-28	Sharp Kabushiki Kaisha	Method for manufacturing metal lamination film, method for manufacturing semiconductor device, and method for manufacturing liquid crystal display device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH01255830A (ja) *	1988-04-05	1989-10-12	Nec Corp	液晶表示装置の配線の製造方法と液晶表示装置の配線
JP3392440B2 (ja) *	1991-12-09	2003-03-31	株式会社東芝	多層導体層構造デバイス
JP2000148042A (ja) *	1998-11-12	2000-05-26	Sharp Corp	電極配線基板の製造方法及び液晶表示装置の製造方法
JP4160013B2 (ja) *	1998-11-17	2008-10-01	株式会社半導体エネルギー研究所	半導体装置
JP2002111004A (ja) *	2000-10-02	2002-04-12	Toshiba Corp	アレイ基板の製造方法
JP4920140B2 (ja) *	2001-05-18	2012-04-18	ゲットナー・ファンデーション・エルエルシー	液晶表示装置及びその製造方法
WO2003036707A1 (fr) *	2001-10-22	2003-05-01	Mitsubishi Gas Chemical Company, Inc.	Procede de gravure pour film lamine en aluminium-molybdene
JP2003149674A (ja) *	2001-11-13	2003-05-21	Hitachi Ltd	液晶表示装置

2005
- 2005-11-07 JP JP2005321902A patent/JP4741343B2/ja not_active Expired - Fee Related

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Publication number	Publication date
JP2006179871A (ja)	2006-07-06

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Publication	Publication Date	Title
US8124544B2 (en)	2012-02-28	Method for manufacturing semiconductor device
JP6736743B2 (ja)	2020-08-05	半導体装置
JP7045433B2 (ja)	2022-03-31	半導体装置
JP5089636B2 (ja)	2012-12-05	半導体装置の作製方法及び液晶表示装置の作製方法
JP4480968B2 (ja)	2010-06-16	表示装置
CN100437308C (zh)	2008-11-26	显示器件及电子设备
JP2012099824A (ja)	2012-05-24	電子機器
JP2009124121A (ja)	2009-06-04	半導体装置およびその作製方法
JP4974500B2 (ja)	2012-07-11	半導体装置、モジュール及び電子機器
JP4741343B2 (ja)	2011-08-03	半導体装置の作製方法
JP4849821B2 (ja)	2012-01-11	表示装置、電子機器
JP4974493B2 (ja)	2012-07-11	半導体装置及び電子機器
JP5004459B2 (ja)	2012-08-22	半導体装置の作製方法
CN119649721A (zh)	2025-03-18	显示设备