JP2008510302A - 半導体基板処理装置 - Google Patents

半導体基板処理装置 Download PDF

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Publication number
JP2008510302A
JP2008510302A JP2007525630A JP2007525630A JP2008510302A JP 2008510302 A JP2008510302 A JP 2008510302A JP 2007525630 A JP2007525630 A JP 2007525630A JP 2007525630 A JP2007525630 A JP 2007525630A JP 2008510302 A JP2008510302 A JP 2008510302A
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JP
Japan
Prior art keywords
semiconductor substrate
semiconductor
liquid
processing
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007525630A
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English (en)
Japanese (ja)
Other versions
JP2008510302A5 (2
Inventor
スティーヴン ヴァーヘイヴァービーク，
ブライアン， ジェイ． ブラウン，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2008510302A publication Critical patent/JP2008510302A/ja
Publication of JP2008510302A5 publication Critical patent/JP2008510302A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/04—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by a combination of operations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0416—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2007525630A 2004-08-12 2005-07-22 半導体基板処理装置 Pending JP2008510302A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/918,757 US20060035475A1 (en) 2004-08-12 2004-08-12 Semiconductor substrate processing apparatus
PCT/US2005/025823 WO2006020333A1 (en) 2004-08-12 2005-07-22 A semiconductor substrate processing apparatus and method thereof

Publications (2)

Publication Number Publication Date
JP2008510302A true JP2008510302A (ja) 2008-04-03
JP2008510302A5 JP2008510302A5 (2) 2008-09-04

Family

ID=34980381

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007525630A Pending JP2008510302A (ja) 2004-08-12 2005-07-22 半導体基板処理装置

Country Status (7)

Country Link
US (2) US20060035475A1 (2)
EP (1) EP1787315A1 (2)
JP (1) JP2008510302A (2)
KR (1) KR100890486B1 (2)
CN (1) CN100552872C (2)
TW (1) TW200610011A (2)
WO (1) WO2006020333A1 (2)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7718012B2 (en) * 2004-12-30 2010-05-18 Infineon Technologies Ag Method of degasification in semiconductor cleaning
US20080268617A1 (en) * 2006-08-09 2008-10-30 Applied Materials, Inc. Methods for substrate surface cleaning suitable for fabricating silicon-on-insulator structures
US7694688B2 (en) 2007-01-05 2010-04-13 Applied Materials, Inc. Wet clean system design
CN106944381A (zh) * 2016-01-06 2017-07-14 中芯国际集成电路制造(上海)有限公司 晶圆清洗装置及其清洗方法
US11139183B2 (en) 2018-05-24 2021-10-05 Taiwan Semiconductor Manufacturing Co., Ltd. Systems and methods for dry wafer transport

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02116130A (ja) * 1988-10-26 1990-04-27 Matsushita Electron Corp 基板の洗浄方法
JPH03283535A (ja) * 1990-03-30 1991-12-13 Tokyo Electron Ltd ウエット洗浄装置
JPH0945610A (ja) * 1995-07-28 1997-02-14 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2000306881A (ja) * 1999-03-26 2000-11-02 Applied Materials Inc 基板洗浄乾燥装置
JP2003100688A (ja) * 2001-09-25 2003-04-04 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2003179025A (ja) * 2001-09-27 2003-06-27 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2003264165A (ja) * 2002-03-08 2003-09-19 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理システム

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4764477A (en) * 1987-04-06 1988-08-16 Motorola, Inc. CMOS process flow with small gate geometry LDO N-channel transistors
JPH03129732A (ja) * 1989-07-19 1991-06-03 Matsushita Electric Ind Co Ltd 半導体の処理方法
US5227001A (en) * 1990-10-19 1993-07-13 Integrated Process Equipment Corporation Integrated dry-wet semiconductor layer removal apparatus and method
US5996594A (en) * 1994-11-30 1999-12-07 Texas Instruments Incorporated Post-chemical mechanical planarization clean-up process using post-polish scrubbing
US5605861A (en) * 1995-05-05 1997-02-25 Texas Instruments Incorporated Thin polysilicon doping by diffusion from a doped silicon dioxide film
US20030051972A1 (en) * 1997-05-05 2003-03-20 Semitool, Inc. Automated immersion processing system
JP4299966B2 (ja) * 1997-09-23 2009-07-22 エスイーゼツト・アクチエンゲゼルシヤフト 改善された化学的乾燥及び清浄化システム
US6494217B2 (en) * 1998-03-12 2002-12-17 Motorola, Inc. Laser cleaning process for semiconductor material and the like
US6410436B2 (en) * 1999-03-26 2002-06-25 Canon Kabushiki Kaisha Method of cleaning porous body, and process for producing porous body, non-porous film or bonded substrate
US6727185B1 (en) * 1999-11-29 2004-04-27 Texas Instruments Incorporated Dry process for post oxide etch residue removal
CN1381868A (zh) * 2001-04-17 2002-11-27 华邦电子股份有限公司 具有加热组件的半导体制造装置
EP1263022B1 (en) * 2001-05-31 2007-04-25 S.E.S. Company Limited Substrate cleaning system
US6579810B2 (en) * 2001-06-21 2003-06-17 Macronix International Co. Ltd. Method of removing a photoresist layer on a semiconductor wafer
US6875289B2 (en) * 2002-09-13 2005-04-05 Fsi International, Inc. Semiconductor wafer cleaning systems and methods

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02116130A (ja) * 1988-10-26 1990-04-27 Matsushita Electron Corp 基板の洗浄方法
JPH03283535A (ja) * 1990-03-30 1991-12-13 Tokyo Electron Ltd ウエット洗浄装置
JPH0945610A (ja) * 1995-07-28 1997-02-14 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2000306881A (ja) * 1999-03-26 2000-11-02 Applied Materials Inc 基板洗浄乾燥装置
JP2003100688A (ja) * 2001-09-25 2003-04-04 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2003179025A (ja) * 2001-09-27 2003-06-27 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2003264165A (ja) * 2002-03-08 2003-09-19 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理システム

Also Published As

Publication number Publication date
KR20070046874A (ko) 2007-05-03
CN101006549A (zh) 2007-07-25
US20080045029A1 (en) 2008-02-21
EP1787315A1 (en) 2007-05-23
TW200610011A (en) 2006-03-16
KR100890486B1 (ko) 2009-03-26
CN100552872C (zh) 2009-10-21
WO2006020333A1 (en) 2006-02-23
US20060035475A1 (en) 2006-02-16

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