JP2009076784A5 - - Google Patents

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Publication number: JP2009076784A5
Authority: JP; Japan
Prior art keywords: semiconductor wafer; substrate; semiconductor; layer; insulating layer
Prior art date: 2007-09-21
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP2007246069A

Other languages

English (en)

Japanese (ja)

Other versions

JP2009076784A (ja

JP5252867B2 (ja

Filing date

2007-09-21

Publication date

2010-10-21

2007-09-21 Application filed filed Critical

2007-09-21 Priority to JP2007246069A priority Critical patent/JP5252867B2/ja

2007-09-21 Priority claimed from JP2007246069A external-priority patent/JP5252867B2/ja

2009-04-09 Publication of JP2009076784A publication Critical patent/JP2009076784A/ja

2010-10-21 Publication of JP2009076784A5 publication Critical patent/JP2009076784A5/ja

2013-07-31 Application granted granted Critical

2013-07-31 Publication of JP5252867B2 publication Critical patent/JP5252867B2/ja

Status Expired - Fee Related legal-status Critical Current

2027-09-21 Anticipated expiration legal-status Critical

Links

239000004065 semiconductor Substances 0.000 claims 26
239000000758 substrate Substances 0.000 claims 15
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 8
238000004519 manufacturing process Methods 0.000 claims 7
239000001257 hydrogen Substances 0.000 claims 6
229910052739 hydrogen Inorganic materials 0.000 claims 6
238000000926 separation method Methods 0.000 claims 5
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 4
230000005684 electric field Effects 0.000 claims 4
229910052757 nitrogen Inorganic materials 0.000 claims 4
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 3
-1 hydrogen ions Chemical class 0.000 claims 3
150000002500 ions Chemical class 0.000 claims 3
239000001301 oxygen Substances 0.000 claims 3
229910052760 oxygen Inorganic materials 0.000 claims 3
238000003776 cleavage reaction Methods 0.000 claims 2
229910052736 halogen Inorganic materials 0.000 claims 2
150000002367 halogens Chemical class 0.000 claims 2
238000010438 heat treatment Methods 0.000 claims 2
238000000034 method Methods 0.000 claims 2
230000007017 scission Effects 0.000 claims 2
229910052581 Si3N4 Inorganic materials 0.000 claims 1
230000001133 acceleration Effects 0.000 claims 1
239000011521 glass Substances 0.000 claims 1
238000009499 grossing Methods 0.000 claims 1
150000002431 hydrogen Chemical class 0.000 claims 1
239000011261 inert gas Substances 0.000 claims 1
238000005224 laser annealing Methods 0.000 claims 1
230000003647 oxidation Effects 0.000 claims 1
238000007254 oxidation reaction Methods 0.000 claims 1
230000001590 oxidative effect Effects 0.000 claims 1
229910052710 silicon Inorganic materials 0.000 claims 1
239000010703 silicon Substances 0.000 claims 1
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1

JP2007246069A 2007-09-21 2007-09-21 半導体基板の製造方法 Expired - Fee Related JP5252867B2 (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP2007246069A JP5252867B2 (ja)	2007-09-21	2007-09-21	半導体基板の製造方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2007246069A JP5252867B2 (ja)	2007-09-21	2007-09-21	半導体基板の製造方法

Publications (3)

Publication Number	Publication Date
JP2009076784A JP2009076784A (ja)	2009-04-09
JP2009076784A5 true JP2009076784A5 (de)	2010-10-21
JP5252867B2 JP5252867B2 (ja)	2013-07-31

Family

ID=40611456

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2007246069A Expired - Fee Related JP5252867B2 (ja)	2007-09-21	2007-09-21	半導体基板の製造方法

Country Status (1)

Country	Link
JP (1)	JP5252867B2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US8318588B2 (en) *	2009-08-25	2012-11-27	Semiconductor Energy Laboratory Co., Ltd.	Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate
US8735263B2 (en) *	2011-01-21	2014-05-27	Semiconductor Energy Laboratory Co., Ltd.	Method for manufacturing SOI substrate
JP6579086B2 (ja) *	2016-11-15	2019-09-25	信越半導体株式会社	デバイス形成方法
JP6686962B2 (ja) *	2017-04-25	2020-04-22	信越半導体株式会社	貼り合わせウェーハの製造方法
CN112599655A (zh) *	2019-03-13	2021-04-02	电子科技大学	多功能单晶薄膜、其制备方法和谐振器

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2000150835A (ja) *	1998-11-05	2000-05-30	Fujitsu Ltd	非単結晶シリコン薄膜の製造方法
FR2877491B1 (fr) *	2004-10-29	2007-01-19	Soitec Silicon On Insulator	Structure composite a forte dissipation thermique
KR20080042095A (ko) *	2005-07-27	2008-05-14	실리콘 제너시스 코포레이션	제어된 클리빙 처리를 이용하여 플레이트 상에 다수의 타일영역을 제작하는 방법 및 구조

2007
- 2007-09-21 JP JP2007246069A patent/JP5252867B2/ja not_active Expired - Fee Related

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