JP2011151663A

JP2011151663A - Phase synchronization oscillator

Info

Publication number: JP2011151663A
Application number: JP2010012152A
Authority: JP
Inventors: Hiroyuki Nonomura; 博之野々村
Original assignee: Mitsubishi Electric Corp
Current assignee: Mitsubishi Electric Corp
Priority date: 2010-01-22
Filing date: 2010-01-22
Publication date: 2011-08-04
Anticipated expiration: 2030-01-22
Also published as: JP5600944B2

Abstract

【課題】小さいばらつきで電圧制御回路から供給される温度補償された電圧によって制御される電圧制御発振器を介して接続された増幅器の出力電力を、精度良く増減させ出力端子から出力する位相同期発振装置を得る。
【解決手段】発振周波数を制御する周波数制御電圧入力端子と発振電力を制御する電圧入力端子とを有する電圧制御発振器と、この電圧制御発振器から出力される高周波信号を増幅して出力する温度特性を有する増幅器と、温度センサを有し、この温度センサの出力信号で基準電圧から変化する電圧を前記電圧制御発振器の電圧入力端子に入力し、前記電圧制御発振器を介して前記増幅器の電力非飽和領域の電力を増減する電圧制御回路とを備えている。
【選択図】図１PROBLEM TO BE SOLVED: To accurately increase / decrease output power of an amplifier connected via a voltage controlled oscillator controlled by a temperature compensated voltage supplied from a voltage control circuit with a small variation and output from the output terminal. Get.
A voltage controlled oscillator having a frequency control voltage input terminal for controlling an oscillation frequency and a voltage input terminal for controlling an oscillation power, and a temperature characteristic for amplifying and outputting a high frequency signal output from the voltage controlled oscillator. An amplifier having a temperature sensor, a voltage changing from a reference voltage by an output signal of the temperature sensor is input to a voltage input terminal of the voltage controlled oscillator, and the power non-saturation region of the amplifier is passed through the voltage controlled oscillator And a voltage control circuit for increasing / decreasing the power.
[Selection] Figure 1

Description

本発明は、高周波電力増幅回路などに用いられる位相同期発振装置に関する。 The present invention relates to a phase-locked oscillator used for a high-frequency power amplifier circuit and the like.

高周波電力増幅回路などに使用する位相同期発振装置では、高周波信号源である電圧制御発振器からの発振電力だけでは出力電力が不足するため、電圧制御発振器の出力を増幅器を用いて所望の出力電力に増幅する構成とすることが一般的である。 In a phase-locked oscillator used for a high-frequency power amplifier circuit, the output power is insufficient with only the oscillation power from the voltage-controlled oscillator, which is a high-frequency signal source, so the output of the voltage-controlled oscillator is converted to the desired output power using an amplifier. In general, a configuration for amplification is used.

位相同期発振装置を構成する電圧制御発振器や増幅器には温度特性があるため、温度変動により、電圧制御発振器の発振電力や増幅器の利得が変動し、結果として、位相同期発振装置の出力電力が変動する。温度変動に対して位相同期発振装置の出力電力の変動を抑制するため、電圧制御発振器の発振電力に温度補償を実施する方法や増幅器の利得に対して温度補償を実施する方法がある。 The voltage-controlled oscillator and amplifier that make up the phase-locked oscillator have temperature characteristics. Therefore, the oscillation power of the voltage-controlled oscillator and the gain of the amplifier fluctuate due to temperature fluctuations. As a result, the output power of the phase-locked oscillator varies. To do. In order to suppress the fluctuation of the output power of the phase-locked oscillator with respect to the temperature fluctuation, there are a method of performing temperature compensation on the oscillation power of the voltage controlled oscillator and a method of performing temperature compensation on the gain of the amplifier.

発振器の発振電力に温度補償を実施する方法として、特開平４−０１８８０４号公報図２（特許文献１参照）においては、トランジスタ２０のコレクタ−エミッタ間電位差Ｖ_ＣＥ３を温度変化に対応して制御することにより、電源電圧−Ｖ_ＣＣがトランジスタ２０のコレクタ−エミッタ間の電位差分だけオフセットされることを利用して、発振回路１のバイポーラ型トランジスタ４のエミッタ・コレクタ間電圧Ｖ_ＣＥ１を制御する電圧制御回路１２を備えている。 As a method for performing temperature compensation on the oscillation power of the oscillator, in FIG. 2 of Japanese Patent Laid-Open No. 4-018804 (refer to Patent Document 1), the collector-emitter potential difference V _CE3 of the transistor 20 is controlled in accordance with the temperature change. it, the power supply voltage -V _CC collector of the transistor 20 - by utilizing the fact that is offset by the potential difference amount between the emitter, the voltage control for controlling the emitter-collector voltage V _CE1 bipolar transistor 4 of the oscillating circuit 1 A circuit 12 is provided.

さらに、この電圧制御回路１２からの制御電圧は、電流制御回路１１内のサーミスタ１９を通じてバイポーラ型トランジスタ４のエミッタに供給されている。 Further, the control voltage from the voltage control circuit 12 is supplied to the emitter of the bipolar transistor 4 through the thermistor 19 in the current control circuit 11.

このような構成により、温度変化に応じて上記バイポーラ型トランジスタ４のエミッタ・コレクタ間電圧Ｖ_ＣＥ１を変化させ、温度変化による発振電力の変動を抑制しているものが開示されている。 With such a configuration, a device is disclosed in which the emitter-collector voltage _VCE1 of the bipolar transistor 4 is changed according to a temperature change to suppress fluctuations in oscillation power due to the temperature change.

特開平４−０１８８０４号公報（第２図）JP-A-4-018804 (FIG. 2)

しかし、特許文献１に記載のものは、電圧制御回路１２は、電圧制御素子としてバイポーラ型トランジスタ２０を用いている。バイポーラ型トランジスタ２０は型名が同一であっても、バイポーラ型トランジスタ２０の電流増幅率ｈ_ＦＥが個体間ばらつきを有するため、バイポーラ型トランジスタ２０の個体間ごとにサーミスタ２１及び抵抗２２の値の調整が必要になる問題があった。 However, in the device described in Patent Document 1, the voltage control circuit 12 uses a bipolar transistor 20 as a voltage control element. Even if the bipolar transistor 20 has the same model name, the current amplification factor h _FE of the bipolar transistor 20 varies among individuals, so that the values of the thermistor 21 and the resistor 22 are adjusted for each individual bipolar transistor 20. There was a problem that would be necessary.

また、電圧制御回路１２からの制御電圧は電流制御回路１１内のサーミスタ１９を介して発振回路を構成するトランジスタ４に供給されるので、電圧制御回路１２内のサーミスタ２１の温度係数の選定にあたっては、発振回路を構成するトランジスタ４の発振効率の温度依存性に加えて、電流制御回路１１内のサーミスタ１９の温度係数も考慮しなければならない問題があった。 Further, since the control voltage from the voltage control circuit 12 is supplied to the transistor 4 constituting the oscillation circuit via the thermistor 19 in the current control circuit 11, in selecting the temperature coefficient of the thermistor 21 in the voltage control circuit 12. In addition to the temperature dependence of the oscillation efficiency of the transistor 4 constituting the oscillation circuit, there is a problem that the temperature coefficient of the thermistor 19 in the current control circuit 11 must also be considered.

この発明は、このような問題を解決するためになされたもので、小さいばらつきで電圧制御回路から供給される温度補償された電圧によって制御される電圧制御発振器を介して接続された増幅器の出力電力を、精度良く増減させ出力端子から出力する位相同期発振装置を提供する。 The present invention has been made to solve such a problem, and the output power of an amplifier connected via a voltage controlled oscillator controlled by a temperature compensated voltage supplied from a voltage control circuit with a small variation. Is provided with a phase-locked oscillation device that outputs a signal from an output terminal.

この発明に係る位相同期発振装置は、発振周波数を制御する周波数制御電圧入力端子と発振電力を増減する電圧入力端子とを有する電圧制御発振器と、この電圧制御発振器から出力される一方の高周波信号を入力とし周波数を１／Ｎ（Ｎは正の整数）倍して出力する分周器と、この分周器から出力される高周波信号の位相と基準高周波信号の位相とを比較した差分の交流電圧を出力する位相比較器と、この位相比較器から出力される前記交流電圧を直流電圧に変換し、歪を除去してから前記周波数制御電圧入力端子へ出力するループフィルタと、前記電圧制御発振器から出力される他方の高周波信号を増幅して出力する温度特性を有する増幅器と、温度センサを有し、この温度センサの出力信号で基準電圧からの電圧を変化させ前記電圧制御発振器の電圧入力端子に入力し、前記電圧制御発振器を介して前記増幅器の電力非飽和領域の電力を増減する電圧制御回路とを備えたものである。 A phase locked oscillator according to the present invention includes a voltage controlled oscillator having a frequency control voltage input terminal for controlling the oscillation frequency and a voltage input terminal for increasing or decreasing the oscillation power, and one high frequency signal output from the voltage controlled oscillator. A frequency divider that outputs an input frequency multiplied by 1 / N (N is a positive integer), and a differential AC voltage that compares the phase of the high-frequency signal output from this frequency divider with the phase of the reference high-frequency signal A phase comparator that outputs the AC voltage, a loop filter that converts the AC voltage output from the phase comparator into a DC voltage, removes distortion, and outputs the DC voltage to the frequency control voltage input terminal, and the voltage controlled oscillator An amplifier having a temperature characteristic for amplifying and outputting the other high-frequency signal to be output and a temperature sensor, and the voltage control by changing the voltage from the reference voltage by the output signal of this temperature sensor Input to the voltage input terminal of the oscillator, in which a voltage control circuit for increasing or decreasing the power of the power non-saturation region of the amplifier via the voltage control oscillator.

この発明は、電圧制御回路の温度センサによって構成された温度補償回路の出力を電圧制御発振器に入力し、温度補償された電圧制御発振器を介して能動素子の電力を増減させることにより、能動素子の利得を直接温度制御しないので能動素子に流れるバイアス電流の温度変化による出力変動を考慮する必要がない高精度な位相同期発振装置が得られる。 According to the present invention, the output of the temperature compensation circuit configured by the temperature sensor of the voltage control circuit is input to the voltage control oscillator, and the power of the active element is increased or decreased via the temperature compensated voltage control oscillator. Since the gain is not directly temperature controlled, it is possible to obtain a highly accurate phase-locked oscillation device that does not need to consider output fluctuation due to temperature change of the bias current flowing through the active element.

この発明の実施の形態１における位相同期発振装置を示すブロック図である。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a block diagram illustrating a phase-locked oscillation device according to Embodiment 1 of the present invention. この発明の実施の形態１における位相同期発振装置の電圧制御発振器及び電圧制御回路を示す回路構成図である。It is a circuit block diagram which shows the voltage controlled oscillator and voltage control circuit of the phase locked oscillation apparatus in Embodiment 1 of this invention. この発明の実施の形態１における位相同期発振装置の温度特性を説明する説明図である。It is explanatory drawing explaining the temperature characteristic of the phase locked oscillation apparatus in Embodiment 1 of this invention. この発明の実施の形態１における位相同期発振装置の電圧制御発振器のコレクタ電圧に対する発振電力の特性を説明する説明図である。It is explanatory drawing explaining the characteristic of the oscillation electric power with respect to the collector voltage of the voltage controlled oscillator of the phase locked oscillation apparatus in Embodiment 1 of this invention. この発明の実施の形態１における位相同期発振装置の温度変動に伴う出力電力の変動の抑制を説明する説明図である。It is explanatory drawing explaining suppression of the fluctuation | variation of the output electric power accompanying the temperature fluctuation | variation of the phase-locked oscillation apparatus in Embodiment 1 of this invention. この発明の実施の形態２における位相同期発振装置の電圧制御発振器及び電圧制御回路を示す回路構成図である。It is a circuit block diagram which shows the voltage controlled oscillator and voltage control circuit of the phase locked oscillation apparatus in Embodiment 2 of this invention. この発明の実施の形態３における位相同期発振装置の電圧制御発振器及び電圧制御回路を示す構成図である。It is a block diagram which shows the voltage controlled oscillator and voltage control circuit of the phase locked oscillation apparatus in Embodiment 3 of this invention.

実施の形態１．
図１は、この発明の実施の形態１における位相同期発振装置を示すブロック図である。図１において、１は電圧制御発振器であり、可変容量ダイオード、コイルなどで構成された共振回路１１の共振信号を増幅し出力を帰還回路１２を通して入力に正帰還することで発振動作をし高周波信号を出力端子１ａから出力する発振素子であるバイポーラトランジスタ１３と、前記可変容量ダイオードに印加する直流電圧を制御することで発振周波数を制御する周波数制御電圧端子１ｂと、バイポーラトランジスタ１３のコレクタ端子に入力する直流電圧を制御することで発振電力を制御する電圧入力端子１ｃとを備えている。 Embodiment 1 FIG.
1 is a block diagram showing a phase-locked oscillation device according to Embodiment 1 of the present invention. In FIG. 1, reference numeral 1 denotes a voltage-controlled oscillator, which amplifies a resonance signal of a resonance circuit 11 composed of a variable capacitance diode, a coil, etc., and positively feeds back an output to an input through a feedback circuit 12 to perform an oscillation operation and perform a high-frequency signal. Is output from the output terminal 1a to the bipolar transistor 13, the frequency control voltage terminal 1b for controlling the oscillation frequency by controlling the DC voltage applied to the variable capacitance diode, and the input to the collector terminal of the bipolar transistor 13. And a voltage input terminal 1c for controlling the oscillation power by controlling the direct current voltage.

２は分周器であり、位相同期発振装置の発振周波数が基準高周波信号源４の周波数のＮ倍（Ｎは正の整数）の周波数となるように、電圧制御発振器１の出力端子１ａから出力される高周波信号の一方が入力し、この高周波信号の周波数を１／Ｎ倍して出力する。 Reference numeral 2 denotes a frequency divider that is output from the output terminal 1a of the voltage controlled oscillator 1 so that the oscillation frequency of the phase-locked oscillator is N times the frequency of the reference high-frequency signal source 4 (N is a positive integer). One of the high frequency signals to be input is input, and the frequency of the high frequency signal is multiplied by 1 / N and output.

３は位相比較器であり、電圧制御発振器１から出力される高周波信号の周波数を一定の値に保つため、分周器２から出力される高周波信号の位相と基準高周波信号源４からの基準高周波信号の位相とを比較し、その差分を交流電圧に変換して出力する。 Reference numeral 3 denotes a phase comparator, which maintains the frequency of the high frequency signal output from the voltage controlled oscillator 1 at a constant value, and the phase of the high frequency signal output from the frequency divider 2 and the reference high frequency signal from the reference high frequency signal source 4. The phase of the signal is compared, and the difference is converted into an AC voltage and output.

５はループフィルタであり、前記交流電圧に含まれる周期変動、スパイクなどの歪を除去した直流電圧に変換して電圧制御発振器１の周波数制御電圧端子１ｂへ出力する。 Reference numeral 5 denotes a loop filter, which converts it into a DC voltage from which distortions such as periodic fluctuations and spikes contained in the AC voltage have been removed and outputs it to the frequency control voltage terminal 1b of the voltage controlled oscillator 1.

このループフィルタ５から出力される直流電圧にて共振回路１１内の可変容量ダイオードの静電容量が制御されることで共振回路１１の共振周波数が調整され、電圧制御発振器１の発振周波数は常に基準高周波信号のＮ倍の周波数に保たれる。 The resonance frequency of the resonance circuit 11 is adjusted by controlling the electrostatic capacitance of the variable capacitance diode in the resonance circuit 11 with the DC voltage output from the loop filter 5, and the oscillation frequency of the voltage controlled oscillator 1 is always the reference. The frequency is maintained N times that of the high frequency signal.

６は増幅器であり、電圧制御発振器１の出力端子１ａから出力される高周波信号の他方が入力され所望の高周波電力に増幅して出力し、非飽和動作領域で動作し入力電力の増減に連動して出力電力が増減する。 Reference numeral 6 denotes an amplifier. The other of the high-frequency signals output from the output terminal 1a of the voltage-controlled oscillator 1 is input, amplified to a desired high-frequency power, output, operated in a non-saturated operation region, and interlocked with the increase or decrease in input power. Output power increases or decreases.

７は高調波抑圧フィルタであり、増幅器６から出力される高周波信号に含まれる高調波を抑圧して位相同期発振装置の出力端子８へ高周波信号を出力し、低域通過フィルタや帯域通過フィルタなどで構成される。 A harmonic suppression filter 7 suppresses harmonics included in the high-frequency signal output from the amplifier 6 and outputs a high-frequency signal to the output terminal 8 of the phase-locked oscillation device, so that a low-pass filter, a band-pass filter, etc. Consists of.

９は電圧制御回路であり、電圧制御発振器１の電圧制御端子１ｃに温度変動に連動して増減する電圧を入力する。 A voltage control circuit 9 inputs a voltage that increases or decreases in conjunction with temperature fluctuations to the voltage control terminal 1 c of the voltage controlled oscillator 1.

図２は、この発明の実施の形態１における位相同期発振装置の電圧制御発振器及び電圧制御回路を示す構成図である。図２において、図１と同一の構成要素には同一符号を付し、その説明を省略する。 FIG. 2 is a configuration diagram showing a voltage controlled oscillator and a voltage control circuit of the phase locked oscillator according to Embodiment 1 of the present invention. 2, the same components as those in FIG. 1 are denoted by the same reference numerals, and the description thereof is omitted.

電圧制御回路９は、基準電圧９１と、固定抵抗９２と、温度検出素子として負特性のサーミスタ９３とを備え、基準電圧９１の電圧を固定抵抗９２とサーミスタ９３との並列回路で電圧降下した電圧が、電圧制御発振器１の電圧入力端子１ｂを通してバイポーラトランジスタ１３のコレクタ端子に供給されている。 The voltage control circuit 9 includes a reference voltage 91, a fixed resistor 92, and a thermistor 93 having a negative characteristic as a temperature detection element, and a voltage obtained by dropping the voltage of the reference voltage 91 in a parallel circuit of the fixed resistor 92 and the thermistor 93. Is supplied to the collector terminal of the bipolar transistor 13 through the voltage input terminal 1 b of the voltage controlled oscillator 1.

図３は、この発明の実施の形態１における位相同期発振装置の温度特性を説明する説明図である。図３（ａ）は、電圧制御発振器の発振電力の温度特性、図３（ｂ）は増幅器の利得の温度特性、図３（ｃ）は位相同期発振装置の出力電力の温度特性である。 FIG. 3 is an explanatory diagram for explaining the temperature characteristics of the phase-locked oscillator according to Embodiment 1 of the present invention. 3A shows the temperature characteristic of the oscillation power of the voltage controlled oscillator, FIG. 3B shows the temperature characteristic of the gain of the amplifier, and FIG. 3C shows the temperature characteristic of the output power of the phase-locked oscillator.

半導体素子は一般に温度の上昇と共に動作効率が低下する。従って、温度上昇と共に、図３（ａ）に示すように電圧制御発振器の発振電力は低下し、図３（ｂ）に示すように増幅器の利得は低下し、結果として図３（ｃ）に示すように位相同期発振器の出力電力が低下する。 In general, the operation efficiency of semiconductor elements decreases with increasing temperature. Therefore, as the temperature rises, the oscillation power of the voltage controlled oscillator decreases as shown in FIG. 3 (a), and the gain of the amplifier decreases as shown in FIG. 3 (b), resulting in the result shown in FIG. 3 (c). As a result, the output power of the phase-locked oscillator decreases.

図４は、この発明の実施の形態１における位相同期発振装置の電圧制御発振器１のコレクタ電圧に対する発振電力の特性を説明する説明図である。図４に示すように、電圧制御発振器１を構成するバイポーラトランジスタのコレクタ電圧を上昇させると発振電力は増加し、バイポーラトランジスタのコレクタ電圧を低下させると発振電力は低下する。 FIG. 4 is an explanatory diagram for explaining the characteristics of the oscillating power with respect to the collector voltage of the voltage controlled oscillator 1 of the phase-locked oscillator according to Embodiment 1 of the present invention. As shown in FIG. 4, when the collector voltage of the bipolar transistor constituting the voltage controlled oscillator 1 is increased, the oscillation power is increased, and when the collector voltage of the bipolar transistor is decreased, the oscillation power is decreased.

図５は、この発明の実施の形態１における位相同期発振装置の温度変動に伴う出力電力の変動の抑制を説明する説明図である。図５に示すように、図５（ｃ）で示される増幅器の利得の温度特性と逆の特性を図５（ｂ）に示す電圧制御発振器の出力電力が持つように、電圧制御回路の出力電圧を図５（ａ）の温度特性を持つように変化させ電圧制御発振器の電圧入力端子に入力することにより、位相同期発振装置の出力電力は図５（ｄ）のように温度に対して一定の値となる。 FIG. 5 is an explanatory diagram illustrating suppression of fluctuations in output power accompanying temperature fluctuations in the phase-locked oscillation device according to Embodiment 1 of the present invention. As shown in FIG. 5, the output voltage of the voltage control circuit is such that the output power of the voltage controlled oscillator shown in FIG. 5 (b) has a characteristic opposite to the temperature characteristic of the gain of the amplifier shown in FIG. 5 (c). Is changed so as to have the temperature characteristic of FIG. 5 (a) and input to the voltage input terminal of the voltage controlled oscillator, the output power of the phase-locked oscillator becomes constant with respect to the temperature as shown in FIG. 5 (d). Value.

上記、図５（ａ）の温度特性を持つ電圧を出力する電圧制御回路９の動作を図２を用いて説明する。図２において、サーミスタ９３は、高温時に低抵抗値をなし、低温時に高抵抗値をなす負特性を有する。サーミスタ９３の抵抗値をＲｔｈとし、固定抵抗９２の抵抗値をＲｃとしたとき、低温時にＲｔｈ＞＞Ｒｃ、高温時にＲｔｈ＜＜Ｒｃ、低温から高温の範囲内の所望の温度でＲｔｈ＝Ｒｃとなるように、サーミスタ９３及び固定抵抗９２の抵抗値を選定する。 The operation of the voltage control circuit 9 that outputs the voltage having the temperature characteristic shown in FIG. 5A will be described with reference to FIG. In FIG. 2, the thermistor 93 has a negative characteristic that has a low resistance value at a high temperature and a high resistance value at a low temperature. When the resistance value of the thermistor 93 is Rth and the resistance value of the fixed resistor 92 is Rc, Rth >> Rc at a low temperature, Rth << Rc at a high temperature, and Rth = Rc at a desired temperature within a range from a low temperature to a high temperature. Thus, the resistance values of the thermistor 93 and the fixed resistor 92 are selected.

サーミスタ９３の常温における抵抗値をＲｔｈ０とし、温度係数をＫとすると、Ｒｔｈ＝Ｋ・Ｒｔｈ０で示される。このとき、並列回路の抵抗値Ｒｐは、Ｒｐ＝１／（１／Ｒｔｈ＋１／Ｒｃ）＝（Ｋ・Ｒｔｈ０／（Ｋ・Ｒｔｈ０＋Ｒｃ））・Ｒｃで示され、並列回路の温度係数Ｋｐは、Ｋｐ＝Ｋ・Ｒｔｈ０／（Ｋ・Ｒｔｈ０＋Ｒｃ）となる。この温度係数Ｋｐが図５（ａ）で示す電圧入力端子に入力する電圧の温度変化に相応するようにサーミスタ９３の抵抗値Ｒｔｈと固定抵抗９２の抵抗値Ｒｃを決定する。 When the resistance value of the thermistor 93 at normal temperature is Rth0 and the temperature coefficient is K, Rth = K · Rth0. At this time, the resistance value Rp of the parallel circuit is represented by Rp = 1 / (1 / Rth + 1 / Rc) = (K · Rth0 / (K · Rth0 + Rc)) · Rc, and the temperature coefficient Kp of the parallel circuit is Kp = K · Rth0 / (K · Rth0 + Rc). The resistance value Rth of the thermistor 93 and the resistance value Rc of the fixed resistor 92 are determined so that the temperature coefficient Kp corresponds to the temperature change of the voltage input to the voltage input terminal shown in FIG.

このように固定抵抗９２とサーミスタ９３の抵抗値を選定することにより、固定抵抗９２とサーミスタ９３とで構成される並列回路の抵抗値Ｒｐは、低温時には固定抵抗９２の抵抗値Ｒｃが支配的となり、高温時にはサーミスタ９３の抵抗値Ｒｔｈが支配的となる。 By selecting the resistance values of the fixed resistor 92 and the thermistor 93 in this way, the resistance value Rp of the parallel circuit composed of the fixed resistor 92 and the thermistor 93 becomes dominant at the low temperature. When the temperature is high, the resistance value Rth of the thermistor 93 becomes dominant.

従って、低温時は固定抵抗９２とサーミスタ９３とで構成された並列回路での電圧降下は大きくなるため、電圧入力端子１ｃの電圧は低下し、高温時は前記並列回路での電圧降下は小さくなるため、電圧入力端子１ｃの電圧は増加する。 Accordingly, the voltage drop in the parallel circuit composed of the fixed resistor 92 and the thermistor 93 increases at low temperatures, so the voltage at the voltage input terminal 1c decreases, and the voltage drop in the parallel circuit decreases at high temperatures. Therefore, the voltage at the voltage input terminal 1c increases.

よって、電圧入力端子１ｃの電圧が図５（ａ）のように温度変化するので、温度の増減に連動して増幅器６の入力電力が増減し、位相同期発振装置の出力電力は一定の値に保たれる。 Therefore, since the voltage at the voltage input terminal 1c changes in temperature as shown in FIG. 5A, the input power of the amplifier 6 increases or decreases in conjunction with the increase or decrease of the temperature, and the output power of the phase-locked oscillator becomes a constant value. Kept.

さらに、並列回路の抵抗値Ｒｐの温度係数Ｋｐは、サーミスタ９３の抵抗値Ｒｔｈと固定抵抗９２の抵抗値Ｒｃを組み合わせることにより、精度良く所望の値に設定することが可能である。 Further, the temperature coefficient Kp of the resistance value Rp of the parallel circuit can be accurately set to a desired value by combining the resistance value Rth of the thermistor 93 and the resistance value Rc of the fixed resistor 92.

以上のようにこの発明の実施の形態１による位相同期発振装置によれば、電圧制御回路のサーミスタによって構成された温度補償回路の出力を電圧制御発振器に入力し、温度補償された電圧制御発振器を介して能動素子の電力を増減させることにより、能動素子の利得を直接温度制御しないので能動素子に流れるバイアス電流の温度変化による出力変動や能動素子のバイアス回路に流れる高調波の高周波電力の漏れを考慮する必要がない高精度な位相同期発振装置を得る効果がある。 As described above, according to the phase locked oscillator according to the first embodiment of the present invention, the output of the temperature compensation circuit configured by the thermistor of the voltage control circuit is input to the voltage controlled oscillator, and the temperature controlled voltage controlled oscillator is The gain of the active element is not directly temperature controlled by increasing or decreasing the power of the active element, so that output fluctuation due to temperature change of the bias current flowing through the active element or leakage of harmonic high-frequency power flowing through the bias circuit of the active element is prevented. There is an effect of obtaining a highly accurate phase-locked oscillator that does not need to be considered.

さらに、電圧制御回路が受動素子である固定抵抗とサーミスタとの並列回路で簡単に構成され、能動素子であるバイポーラトランジスタを電圧制御素子として用いていないので、ばらつきが小さい電圧制御回路を実現することができる。さらに、受動素子が小型であるので位相同期発振装置の小型化が可能である。 Furthermore, the voltage control circuit is simply configured with a parallel circuit of a fixed resistor, which is a passive element, and a thermistor, and a bipolar transistor, which is an active element, is not used as a voltage control element, thereby realizing a voltage control circuit with little variation. Can do. Furthermore, since the passive element is small, the phase-locked oscillator can be downsized.

また、電圧制御発振器のバイポーラトランジスタのコレクタ電圧の変化により周波数変動現象が発生する場合であっても、電圧制御発振器の周波数制御電圧端子の電圧は電圧制御発振器の出力から分周された高周波信号と予め設定した基準高周波信号とを差分した信号を位相同期されたループフィルタを介して制御されるため、発振周波数は周波数変動現象の影響を受けることなく、一定の値に保たれる。 In addition, even when a frequency fluctuation phenomenon occurs due to a change in the collector voltage of the bipolar transistor of the voltage controlled oscillator, the voltage of the frequency controlled voltage terminal of the voltage controlled oscillator is a high-frequency signal divided from the output of the voltage controlled oscillator. Since a signal obtained by subtracting a preset reference high-frequency signal is controlled via a phase-synchronized loop filter, the oscillation frequency is maintained at a constant value without being affected by the frequency fluctuation phenomenon.

なお、電圧制御発振器１において、トランジスタはバイポーラトランジスタを用いた場合について説明したが、電界効果トランジスタを用いても同様の作用及び効果が得られる。 In the voltage controlled oscillator 1, the case where a bipolar transistor is used has been described. However, the same operation and effect can be obtained by using a field effect transistor.

実施の形態２．
図６は、この発明の実施の形態２における位相同期発振装置の電圧制御発振器１及び電圧制御回路１０９を示す回路構成図である。図６において、図２と同一の構成要素には同一符号を付し、その説明を省略する。電圧制御回路１０９において、固定抵抗９２とサーミスタ９３は直列接続された分圧回路をなし、固定抵抗９２の他方に基準電圧９１が接続され、サーミスタ９３の他方は接地されている。また、固定抵抗９２とサーミスタ９３とが共通接続された分圧電圧端子１０９ａから電圧入力端子１ｃを介してバイポーラトランジスタ１３のコレクタ端子へ電圧が供給されている。 Embodiment 2. FIG.
FIG. 6 is a circuit configuration diagram showing voltage controlled oscillator 1 and voltage control circuit 109 of the phase-locked oscillator according to Embodiment 2 of the present invention. In FIG. 6, the same components as those in FIG. 2 are denoted by the same reference numerals, and the description thereof is omitted. In the voltage control circuit 109, the fixed resistor 92 and the thermistor 93 form a voltage dividing circuit connected in series, the reference voltage 91 is connected to the other of the fixed resistor 92, and the other of the thermistor 93 is grounded. In addition, a voltage is supplied from the divided voltage terminal 109a to which the fixed resistor 92 and the thermistor 93 are connected in common to the collector terminal of the bipolar transistor 13 through the voltage input terminal 1c.

図６において、サーミスタ９３は、高温時に高抵抗値をなし、低温時に低抵抗値をなす正特性を有する。サーミスタ９３の抵抗値をＲｔｈとし、固定抵抗９２の抵抗値をＲｃとしたとき、低温時にＲｔｈ＜＜Ｒｃ、高温時にＲｔｈ＞＞Ｒｃ、低温から高温の範囲内の所望の温度でＲｔｈ＝Ｒｃとなるように、固定抵抗９２及びサーミスタ９３の抵抗値を選定する。 In FIG. 6, the thermistor 93 has a positive characteristic that has a high resistance value at a high temperature and a low resistance value at a low temperature. When the resistance value of the thermistor 93 is Rth and the resistance value of the fixed resistor 92 is Rc, Rth << Rc at a low temperature, Rth >> Rc at a high temperature, and Rth = Rc at a desired temperature within a range from a low temperature to a high temperature. Thus, the resistance values of the fixed resistor 92 and the thermistor 93 are selected.

サーミスタ９３の常温における抵抗値をＲｔｈ０とし、温度係数をＫとすると、Ｒｔｈ＝Ｋ・Ｒｔｈ０で示される。このとき、分圧回路の分圧電圧端子１０９ａの分圧比Ｖｓは、Ｖｓ＝Ｒｔｈ／（Ｒｃ＋Ｒｔｈ）＝（Ｋ／（Ｋ・Ｒｔｈ０＋Ｒｃ））・Ｒｔｈ０で示され、分圧回路の温度係数Ｋｓは、Ｋｓ＝Ｋ／（Ｋ・Ｒｔｈ０＋Ｒｃ）となる。この温度係数Ｋｓが図５（ａ）で示す電圧入力端子に入力する電圧の温度変化に相応するようにサーミスタ９３の抵抗値Ｒｔｈと固定抵抗９２の抵抗値Ｒｃを決定する。 When the resistance value of the thermistor 93 at normal temperature is Rth0 and the temperature coefficient is K, Rth = K · Rth0. At this time, the voltage dividing ratio Vs of the divided voltage terminal 109a of the voltage dividing circuit is represented by Vs = Rth / (Rc + Rth) = (K / (K · Rth0 + Rc)) · Rth0, and the temperature coefficient Ks of the voltage dividing circuit is Ks = K / (K · Rth0 + Rc). The resistance value Rth of the thermistor 93 and the resistance value Rc of the fixed resistor 92 are determined so that the temperature coefficient Ks corresponds to the temperature change of the voltage input to the voltage input terminal shown in FIG.

このように固定抵抗９２とサーミスタ９３の抵抗値を選定することにより、固定抵抗９２とサーミスタ９３とで構成される分圧回路の抵抗値は、低温時には固定抵抗９２の抵抗値Ｒｃが支配的となり、高温時にはサーミスタ９３の抵抗値Ｒｔｈが支配的となる。 By selecting the resistance values of the fixed resistor 92 and the thermistor 93 in this way, the resistance value Rc of the fixed resistor 92 becomes dominant at the low temperature of the voltage dividing circuit constituted by the fixed resistor 92 and the thermistor 93. When the temperature is high, the resistance value Rth of the thermistor 93 becomes dominant.

従って、低温時は固定抵抗９２とサーミスタ９３との直列回路で構成された分圧回路の分圧比Ｖｓは小さくなるため、電圧制御端子１ｃの電圧は低下し、高温時は前記分圧回路の分圧比Ｖｓは大きくなるため、電圧制御端子１ｃの電圧は増加する。 Accordingly, since the voltage dividing ratio Vs of the voltage dividing circuit configured by the series circuit of the fixed resistor 92 and the thermistor 93 is low at low temperatures, the voltage at the voltage control terminal 1c is reduced, and at the high temperature, the voltage dividing circuit Vs is divided by the voltage dividing circuit. Since the pressure ratio Vs increases, the voltage at the voltage control terminal 1c increases.

よって、電圧制御端子１ｃの電圧が図５（ａ）のように温度変化するので、温度の増減に連動して増幅器６の入力電力が増減し、位相同期発振装置の出力電力は一定の値に保たれる。 Therefore, since the voltage of the voltage control terminal 1c changes as shown in FIG. 5A, the input power of the amplifier 6 increases / decreases in conjunction with the increase / decrease in temperature, and the output power of the phase-locked oscillator becomes a constant value. Kept.

さらに、分圧回路の分圧比Ｖｓの温度係数Ｋｓは、サーミスタ９３の抵抗値Ｒｔｈと固定抵抗９２の抵抗値Ｒｃを組み合わせることにより、精度良く所望の値に設定することが可能である。 Further, the temperature coefficient Ks of the voltage dividing ratio Vs of the voltage dividing circuit can be accurately set to a desired value by combining the resistance value Rth of the thermistor 93 and the resistance value Rc of the fixed resistor 92.

以上のようにこの発明の実施の形態２による位相同期発振装置によれば、電圧制御回路のサーミスタによって構成された温度補償回路の出力を電圧制御発振器に入力し、温度補償された電圧制御発振器を介して能動素子の電力を増減させることにより、能動素子の利得を直接温度制御しないので能動素子に流れるバイアス電流の温度変化による出力変動や能動素子のバイアス回路に流れる高調波の高周波電力の漏れを考慮する必要がない高精度な位相同期発振装置を得る効果がある。 As described above, according to the phase-locked oscillator according to the second embodiment of the present invention, the output of the temperature compensation circuit configured by the thermistor of the voltage control circuit is input to the voltage controlled oscillator, and the temperature controlled voltage controlled oscillator is The gain of the active element is not directly temperature controlled by increasing or decreasing the power of the active element, so that output fluctuation due to temperature change of the bias current flowing through the active element or leakage of harmonic high-frequency power flowing through the bias circuit of the active element is prevented. There is an effect of obtaining a highly accurate phase-locked oscillator that does not need to be considered.

さらに、電圧制御回路が受動素子である固定抵抗とサーミスタとを直列接続した分圧回路で簡単に構成され、能動素子であるバイポーラトランジスタを電圧制御素子として用いていないので、ばらつきが小さい電圧制御回路を実現することができる。さらに、受動素子が小型であるので位相同期発振装置の小型化が可能である。 Furthermore, the voltage control circuit is simply configured with a voltage dividing circuit in which a fixed resistor, which is a passive element, and a thermistor are connected in series, and a bipolar transistor, which is an active element, is not used as a voltage control element. Can be realized. Furthermore, since the passive element is small, the phase-locked oscillator can be downsized.

なお、電圧制御発振器において、トランジスタはバイポーラトランジスタを用いた場合について説明したが、電界効果トランジスタを用いても同様の作用及び効果が得られる。 In the voltage controlled oscillator, the case where a bipolar transistor is used has been described. However, the same operation and effect can be obtained even when a field effect transistor is used.

実施の形態３．
図７は、この発明の実施の形態３における位相同期発振装置の電圧制御発振器１と電圧制御回路２０９を示す構成図である。図７において、図２と同一の構成要素には同一の符号を付し、その説明を省略する。図７において、２９１は温度センサ回路であり、正特性又は負特性のサーミスタ、熱電対などの温度センサを備え、この温度センサのアナログ信号をデジタル信号の温度信号に変換して出力する。 Embodiment 3 FIG.
FIG. 7 is a configuration diagram showing voltage controlled oscillator 1 and voltage control circuit 209 of the phase-locked oscillator according to Embodiment 3 of the present invention. In FIG. 7, the same components as those in FIG. 2 are denoted by the same reference numerals, and the description thereof is omitted. In FIG. 7, reference numeral 291 denotes a temperature sensor circuit which includes a temperature sensor such as a thermistor or a thermocouple having a positive characteristic or a negative characteristic, and converts an analog signal of the temperature sensor into a digital signal temperature signal and outputs it.

２９２は読み出し専用メモリ（ＲＯＭ）であり、バイポーラトランジスタの発振電力の温度特性とコレクタ電圧との補正テーブルをあらかじめ格納する。２９３は演算回路（ＣＰＵ）であり、温度センサ回路２９１からの温度信号が入力し、ＲＯＭ２９２から所定の電圧データを読み出し出力する。 A read only memory (ROM) 292 stores in advance a correction table of the temperature characteristics of the oscillation power of the bipolar transistor and the collector voltage. Reference numeral 293 denotes an arithmetic circuit (CPU) which receives a temperature signal from the temperature sensor circuit 291 and reads out predetermined voltage data from the ROM 292 and outputs it.

２９４はＤ／Ａ変換回路であり、ＣＰＵ２９３からの出力信号をデジタル／アナログ変換（Ｄ／Ａ変換）し、前記電圧データに相応した直流電圧に変換し出力する。２９５は電圧オフセット回路であり、Ｄ／Ａ変換回路２９４からの直流電圧で基準電圧９１からの電圧を変化させて電圧入力端子１ｂへ出力する。 A D / A conversion circuit 294 performs digital / analog conversion (D / A conversion) on an output signal from the CPU 293, converts the output signal into a DC voltage corresponding to the voltage data, and outputs the converted DC voltage. A voltage offset circuit 295 changes the voltage from the reference voltage 91 with the DC voltage from the D / A conversion circuit 294 and outputs it to the voltage input terminal 1b.

電圧制御回路２０９の動作について説明する。ＲＯＭ２９２には、常温時は０Ｖ、常温から温度が上昇するに伴い低下する負電圧データ、及び常温から温度が下降するに伴い増加する正電圧データが格納されている。 The operation of the voltage control circuit 209 will be described. The ROM 292 stores 0 V at normal temperature, negative voltage data that decreases as the temperature increases from normal temperature, and positive voltage data that increases as the temperature decreases from normal temperature.

演算回路２９３は、温度センサ回路２９１からの温度信号に従い、ＲＯＭ２９２から温度に対応する電圧データを読み出し、Ｄ／Ａ変換回路２９４に出力し、Ｄ／Ａ変換回路２９４でＤ／Ａ変換された直流電圧が電圧オフセット回路２９５の反転端子Ｂに入力される。 The arithmetic circuit 293 reads voltage data corresponding to the temperature from the ROM 292 in accordance with the temperature signal from the temperature sensor circuit 291, outputs the voltage data to the D / A conversion circuit 294, and the direct current D / A converted by the D / A conversion circuit 294 The voltage is input to the inverting terminal B of the voltage offset circuit 295.

電圧オフセット回路２９５の反転端子Ｂに入力される電圧は、上記説明から明らかなように常温で０Ｖ、常温より高温側では負電圧、常温より低温側では正電圧となる。 As apparent from the above description, the voltage input to the inverting terminal B of the voltage offset circuit 295 is 0 V at room temperature, a negative voltage at a temperature higher than room temperature, and a positive voltage at a temperature lower than room temperature.

電圧オフセット回路２９５の出力電圧は、出力端子をＣ、基準電圧９１からの電圧の同相入力端子をＡとすると、Ｃ＝Ａ−Ｂで現されるように動作する。すなわち、出力端子Ｃの電圧は、常温で基準電圧、常温より高温側では基準電圧より高い電圧、常温より低温側では基準電圧より低い電圧となる。 The output voltage of the voltage offset circuit 295 operates so as to be expressed as C = A−B, where C is the output terminal and A is the in-phase input terminal of the voltage from the reference voltage 91. That is, the voltage at the output terminal C is a reference voltage at room temperature, a voltage higher than the reference voltage at a temperature higher than room temperature, and a voltage lower than the reference voltage at a temperature lower than room temperature.

従って、電圧制御発振器１の電圧入力端子１ｃに入力する電圧は、温度上昇に伴い増加するように変化するので、温度の増減に連動して増幅器６の入力電力が増減し、増幅器６の出力電力が温度補償され位相同期発振装置の出力電力は一定の値に保たれる。 Therefore, the voltage input to the voltage input terminal 1c of the voltage controlled oscillator 1 changes so as to increase as the temperature rises. Therefore, the input power of the amplifier 6 increases or decreases in conjunction with the increase or decrease of the temperature, and the output power of the amplifier 6 increases. Is compensated for temperature, and the output power of the phase-locked oscillator is maintained at a constant value.

以上のようにこの発明の実施の形態３による位相同期発振装置によれば、電圧制御回路の温度センサによって構成された温度補償回路の出力を電圧制御発振器に入力し、温度補償された電圧制御発振器を介して能動素子の電力を増減させることにより、能動素子の利得を直接温度制御しないので能動素子に流れるバイアス電流の温度変化による出力変動や能動素子のバイアス回路に流れる高調波の高周波電力の漏れを考慮する必要がない高精度な位相同期発振装置を得る効果がある。 As described above, according to the phase-locked oscillator according to Embodiment 3 of the present invention, the output of the temperature compensation circuit configured by the temperature sensor of the voltage control circuit is input to the voltage controlled oscillator, and the temperature controlled voltage controlled oscillator The gain of the active element is not directly temperature controlled by increasing or decreasing the power of the active element through the power supply, so output fluctuation due to temperature change of the bias current flowing through the active element or leakage of harmonic high-frequency power flowing through the bias circuit of the active element. There is an effect of obtaining a highly accurate phase-locked oscillator that does not need to be considered.

さらに、このように構成した位相同期発振装置では、バイポーラトランジスタの発振電力の温度特性とコレクタ電圧との補正テーブルをあらかじめＲＯＭに格納しているので、精度良く位相同期発振装置の出力電力を制御することができる。 Further, in the phase-locked oscillator configured as described above, the correction table of the temperature characteristics and collector voltage of the oscillation power of the bipolar transistor is stored in the ROM in advance, so that the output power of the phase-locked oscillator can be controlled with high accuracy. be able to.

１電圧制御発振器
１ｂ周波数制御電圧入力端子、１ｃ電圧入力端子
２分周器
３位相比較器
４基準高周波信号源
５ループフィルタ
６増幅器
７高調波抑圧フィルタ
８出力端子
９、１０９、２０９電圧制御回路
１３バイポーラトランジスタ
９１基準電圧
９３サーミスタ
２９１温度センサ回路
２９２ＲＯＭ
２９３演算回路
２９４Ｄ／Ａ変換回路
２９５電圧オフセット回路 DESCRIPTION OF SYMBOLS 1 Voltage control oscillator 1b Frequency control voltage input terminal, 1c Voltage input terminal 2 Frequency divider 3 Phase comparator 4 Reference high frequency signal source 5 Loop filter 6 Amplifier 7 Harmonic suppression filter 8 Output terminal 9, 109, 209 Voltage control circuit 13 Bipolar transistor 91 Reference voltage 93 Thermistor 291 Temperature sensor circuit 292 ROM
293 Arithmetic circuit 294 D / A conversion circuit 295 Voltage offset circuit

Claims

A voltage controlled oscillator having a frequency control voltage input terminal for controlling the oscillation frequency and a voltage input terminal for increasing / decreasing the oscillation power, and one high frequency signal output from the voltage controlled oscillator as an input, the frequency is 1 / N (N is A positive integer) frequency divider, a phase comparator that outputs an AC voltage that is the difference between the phase of the high-frequency signal output from the frequency divider and the phase of the reference high-frequency signal, and this phase A loop filter that converts the AC voltage output from the comparator to a DC voltage, removes distortion, and then outputs to the frequency control voltage input terminal, and amplifies the other high-frequency signal output from the voltage controlled oscillator. An amplifier having a temperature characteristic to be output and a temperature sensor, changing a voltage from a reference voltage with an output signal of the temperature sensor and inputting the voltage to a voltage input terminal of the voltage controlled oscillator, Phase synchronization oscillator comprising a voltage control circuit for increasing or decreasing the power of the power non-saturation region of the amplifier via a pressure control oscillator.

A voltage-controlled oscillator comprising a frequency control voltage input terminal for controlling the oscillation frequency and a voltage input terminal for increasing / decreasing the oscillation power, and one high-frequency signal output from the voltage-controlled oscillator as an input, and having a frequency of 1 / N (N is a positive integer) multiplied by a frequency divider, and a phase comparison that outputs an AC voltage of a difference obtained by comparing the phase of a high-frequency signal output from this frequency divider with the phase of a reference high-frequency signal A loop filter that converts the AC voltage output from the phase comparator into a DC voltage, removes distortion, and then outputs the DC voltage to the frequency control voltage input terminal, and the other output from the voltage controlled oscillator An amplifier with temperature characteristics that amplifies and outputs a high-frequency signal, and a harmonic suppression block that suppresses harmonics of the high-frequency signal output from this amplifier and outputs it to the output terminal. And a thermistor having a positive characteristic or a negative characteristic, and a voltage changing from a reference voltage due to a change in the resistance value of the thermistor is input to a voltage input terminal of the voltage controlled oscillator, and the amplifier via the voltage controlled oscillator A phase-locked oscillation device comprising: a voltage control circuit that increases or decreases the power in the power non-saturation region.

A voltage-controlled oscillator comprising a frequency control voltage input terminal for controlling the oscillation frequency and a voltage input terminal for increasing / decreasing the oscillation power, and one high-frequency signal output from the voltage-controlled oscillator as an input, and having a frequency of 1 / N (N is a positive integer) multiplied by a frequency divider, and a phase comparison that outputs an AC voltage of a difference obtained by comparing the phase of a high-frequency signal output from this frequency divider with the phase of a reference high-frequency signal A loop filter that converts the AC voltage output from the phase comparator into a DC voltage, removes distortion, and then outputs the DC voltage to the frequency control voltage input terminal, and the other output from the voltage controlled oscillator An amplifier with temperature characteristics that amplifies and outputs a high-frequency signal, and a harmonic suppression block that suppresses harmonics of the high-frequency signal output from this amplifier and outputs it to the output terminal. And a calculation unit including a temperature sensor circuit for digitally converting an analog signal of the temperature sensor and a ROM for compensating temperature characteristics of oscillation power of the transistor, and the calculation unit corresponding to the digital signal of the temperature sensor circuit Reads out the correction data from the ROM, D / A converts the read data and inputs a correction voltage changing from a reference voltage to the voltage input terminal of the voltage controlled oscillator, and the amplifier via the voltage controlled oscillator A phase-locked oscillation device comprising: a voltage control circuit that increases or decreases the power in the power non-saturation region.