JP2016015374A - 半導体積層構造体及び半導体素子 - Google Patents

半導体積層構造体及び半導体素子 Download PDF

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Publication number
JP2016015374A
JP2016015374A JP2014135957A JP2014135957A JP2016015374A JP 2016015374 A JP2016015374 A JP 2016015374A JP 2014135957 A JP2014135957 A JP 2014135957A JP 2014135957 A JP2014135957 A JP 2014135957A JP 2016015374 A JP2016015374 A JP 2016015374A
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JP
Japan
Prior art keywords
layer
substrate
semiconductor
nitride semiconductor
gan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2014135957A
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English (en)
Japanese (ja)
Inventor
慎九郎 佐藤
Shinkuro Sato
慎九郎 佐藤
嘉克 森島
Yoshikatsu Morishima
嘉克 森島
佳弘 山下
Yoshihiro Yamashita
佳弘 山下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tamura Corp
Koha Co Ltd
Original Assignee
Tamura Corp
Koha Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tamura Corp, Koha Co Ltd filed Critical Tamura Corp
Priority to JP2014135957A priority Critical patent/JP2016015374A/ja
Priority to PCT/JP2015/068881 priority patent/WO2016002801A1/fr
Publication of JP2016015374A publication Critical patent/JP2016015374A/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Landscapes

  • Led Devices (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2014135957A 2014-07-01 2014-07-01 半導体積層構造体及び半導体素子 Pending JP2016015374A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014135957A JP2016015374A (ja) 2014-07-01 2014-07-01 半導体積層構造体及び半導体素子
PCT/JP2015/068881 WO2016002801A1 (fr) 2014-07-01 2015-06-30 Structure semi-conductrice stratifiée et élément à semi-conducteur

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014135957A JP2016015374A (ja) 2014-07-01 2014-07-01 半導体積層構造体及び半導体素子

Publications (1)

Publication Number Publication Date
JP2016015374A true JP2016015374A (ja) 2016-01-28

Family

ID=55019332

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014135957A Pending JP2016015374A (ja) 2014-07-01 2014-07-01 半導体積層構造体及び半導体素子

Country Status (2)

Country Link
JP (1) JP2016015374A (fr)
WO (1) WO2016002801A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018140916A (ja) * 2017-02-28 2018-09-13 株式会社タムラ製作所 窒化物半導体テンプレート及びその製造方法
JP2021192413A (ja) * 2020-06-05 2021-12-16 株式会社Flosfia 半導体装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113646470B (zh) * 2019-04-08 2025-04-11 Ａｇｃ株式会社 氧化镓基板以及氧化镓基板的制造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004247493A (ja) * 2003-02-13 2004-09-02 Ngk Insulators Ltd エピタキシャル基板、半導体積層構造及びｉｉｉ族窒化物層群の転位低減方法
JP2004297010A (ja) * 2003-03-28 2004-10-21 Toyoda Gosei Co Ltd 半導体結晶の製造方法及び半導体発光素子
JP2010087292A (ja) * 2008-09-30 2010-04-15 Toyoda Gosei Co Ltd 発光素子
JP2010114423A (ja) * 2008-10-09 2010-05-20 Canon Inc ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
JP2011060917A (ja) * 2009-09-08 2011-03-24 Rohm Co Ltd 半導体発光素子
WO2012093601A1 (fr) * 2011-01-07 2012-07-12 三菱化学株式会社 SUBSTRAT DE CROISSANCE ÉPITAXIQUE ET DISPOSITIF À DEL AU GaN
JP2014022446A (ja) * 2012-07-13 2014-02-03 Tamura Seisakusho Co Ltd 半導体積層構造体及び発光素子

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004247493A (ja) * 2003-02-13 2004-09-02 Ngk Insulators Ltd エピタキシャル基板、半導体積層構造及びｉｉｉ族窒化物層群の転位低減方法
JP2004297010A (ja) * 2003-03-28 2004-10-21 Toyoda Gosei Co Ltd 半導体結晶の製造方法及び半導体発光素子
JP2010087292A (ja) * 2008-09-30 2010-04-15 Toyoda Gosei Co Ltd 発光素子
JP2010114423A (ja) * 2008-10-09 2010-05-20 Canon Inc ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
JP2011060917A (ja) * 2009-09-08 2011-03-24 Rohm Co Ltd 半導体発光素子
WO2012093601A1 (fr) * 2011-01-07 2012-07-12 三菱化学株式会社 SUBSTRAT DE CROISSANCE ÉPITAXIQUE ET DISPOSITIF À DEL AU GaN
JP2014022446A (ja) * 2012-07-13 2014-02-03 Tamura Seisakusho Co Ltd 半導体積層構造体及び発光素子

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018140916A (ja) * 2017-02-28 2018-09-13 株式会社タムラ製作所 窒化物半導体テンプレート及びその製造方法
JP2021192413A (ja) * 2020-06-05 2021-12-16 株式会社Flosfia 半導体装置

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Publication number Publication date
WO2016002801A1 (fr) 2016-01-07

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