JP2019220681A5 - - Google Patents

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Publication number
JP2019220681A5
JP2019220681A5 JP2019090801A JP2019090801A JP2019220681A5 JP 2019220681 A5 JP2019220681 A5 JP 2019220681A5 JP 2019090801 A JP2019090801 A JP 2019090801A JP 2019090801 A JP2019090801 A JP 2019090801A JP 2019220681 A5 JP2019220681 A5 JP 2019220681A5
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JP
Japan
Prior art keywords
substrate
chamber
film
processing apparatus
plasma
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JP2019090801A
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English (en)
Japanese (ja)
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JP7323330B2 (ja
JP2019220681A (ja
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Priority claimed from US16/010,800 external-priority patent/US10781519B2/en
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Publication of JP2019220681A5 publication Critical patent/JP2019220681A5/ja
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JP2019090801A 2018-06-18 2019-05-13 基板処理方法および基板処理装置 Active JP7323330B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/010,800 2018-06-18
US16/010,800 US10781519B2 (en) 2018-06-18 2018-06-18 Method and apparatus for processing substrate

Publications (3)

Publication Number Publication Date
JP2019220681A JP2019220681A (ja) 2019-12-26
JP2019220681A5 true JP2019220681A5 (2) 2022-05-25
JP7323330B2 JP7323330B2 (ja) 2023-08-08

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JP2019090801A Active JP7323330B2 (ja) 2018-06-18 2019-05-13 基板処理方法および基板処理装置

Country Status (5)

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US (2) US10781519B2 (2)
JP (1) JP7323330B2 (2)
KR (1) KR102734223B1 (2)
CN (1) CN110616416A (2)
TW (1) TWI807049B (2)

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TWI790372B (zh) 2018-04-09 2023-01-21 日商東京威力科創股份有限公司 具有用於低電容內連線之氣隙的半導體元件形成方法
US10896823B2 (en) * 2018-11-21 2021-01-19 Thomas E. Seidel Limited dose atomic layer processes for localizing coatings on non-planar surfaces
JP7285152B2 (ja) * 2019-07-08 2023-06-01 東京エレクトロン株式会社 プラズマ処理装置
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US20250364210A1 (en) * 2024-05-24 2025-11-27 Applied Materials, Inc. Pecvd trench bottom profile control with pulsed dual rf plasma

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US20020004309A1 (en) * 1990-07-31 2002-01-10 Kenneth S. Collins Processes used in an inductively coupled plasma reactor
DE19651029C2 (de) * 1996-12-09 1999-12-02 Ibm Kalibrierstandard für Profilometer und Herstellverfahren
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US7476621B1 (en) * 2003-12-10 2009-01-13 Novellus Systems, Inc. Halogen-free noble gas assisted H2 plasma etch process in deposition-etch-deposition gap fill
US8974868B2 (en) * 2005-03-21 2015-03-10 Tokyo Electron Limited Post deposition plasma cleaning system and method
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