JP2020003306A - 全反射蛍光ｘ線分析装置及び測定方法 - Google Patents

全反射蛍光ｘ線分析装置及び測定方法 Download PDF

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Publication number: JP2020003306A
Authority: JP; Japan
Prior art keywords: measurement sample; total reflection; ray; fluorescent; angle
Prior art date: 2018-06-27
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP2018122155A

Other languages

English (en)

Japanese (ja)

Inventor

浩河野

Hiroshi Kono

河野　　浩

智村上

Satoshi Murakami

智村上

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Rigaku Denki Co Ltd

Rigaku Corp

Original Assignee

Rigaku Denki Co Ltd

Rigaku Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2018-06-27

Filing date

2018-06-27

Publication date

2020-01-09

2018-06-27 Application filed by Rigaku Denki Co Ltd, Rigaku Corp filed Critical Rigaku Denki Co Ltd

2018-06-27 Priority to JP2018122155A priority Critical patent/JP2020003306A/ja

2019-04-01 Priority to PCT/JP2019/014524 priority patent/WO2020003675A1/fr

2020-01-09 Publication of JP2020003306A publication Critical patent/JP2020003306A/ja

Status Pending legal-status Critical Current

Links

238000000691 measurement method Methods 0.000 title claims 2
238000005259 measurement Methods 0.000 claims abstract description 98
230000003746 surface roughness Effects 0.000 claims description 30
238000004364 calculation method Methods 0.000 claims description 26
238000004876 x-ray fluorescence Methods 0.000 claims description 26
230000001678 irradiating effect Effects 0.000 claims description 4
238000000034 method Methods 0.000 abstract description 33
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
229910052710 silicon Inorganic materials 0.000 description 22
239000010703 silicon Substances 0.000 description 22
239000000758 substrate Substances 0.000 description 22
239000010408 film Substances 0.000 description 21
239000010409 thin film Substances 0.000 description 21
239000010936 titanium Substances 0.000 description 9
238000012937 correction Methods 0.000 description 8
238000000560 X-ray reflectometry Methods 0.000 description 5
229910017052 cobalt Inorganic materials 0.000 description 5
239000010941 cobalt Substances 0.000 description 5
GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 5
229910052719 titanium Inorganic materials 0.000 description 5
229910004298 SiO 2 Inorganic materials 0.000 description 4
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
238000002441 X-ray diffraction Methods 0.000 description 4
238000010586 diagram Methods 0.000 description 4
229910052814 silicon oxide Inorganic materials 0.000 description 4
229910008484 TiSi Inorganic materials 0.000 description 3
238000004519 manufacturing process Methods 0.000 description 3
HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
238000004458 analytical method Methods 0.000 description 2
238000011088 calibration curve Methods 0.000 description 2
238000012935 Averaging Methods 0.000 description 1
229910019001 CoSi Inorganic materials 0.000 description 1
239000002131 composite material Substances 0.000 description 1
150000001875 compounds Chemical group 0.000 description 1
239000000470 constituent Substances 0.000 description 1
238000007796 conventional method Methods 0.000 description 1
239000013078 crystal Substances 0.000 description 1
238000001739 density measurement Methods 0.000 description 1
238000013461 design Methods 0.000 description 1
230000000694 effects Effects 0.000 description 1
238000009499 grossing Methods 0.000 description 1
238000003754 machining Methods 0.000 description 1
238000012423 maintenance Methods 0.000 description 1
229910052751 metal Inorganic materials 0.000 description 1
239000002184 metal Substances 0.000 description 1
150000002739 metals Chemical class 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
238000004439 roughness measurement Methods 0.000 description 1
239000004065 semiconductor Substances 0.000 description 1
229910021332 silicide Inorganic materials 0.000 description 1
FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
230000003595 spectral effect Effects 0.000 description 1
229910021341 titanium silicide Inorganic materials 0.000 description 1

Images

Classifications

- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
- G01B15/02—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/223—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence

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Physics & Mathematics (AREA)
Chemical & Material Sciences (AREA)
General Physics & Mathematics (AREA)
Biochemistry (AREA)
Life Sciences & Earth Sciences (AREA)
Analytical Chemistry (AREA)
Health & Medical Sciences (AREA)
General Health & Medical Sciences (AREA)
Immunology (AREA)
Pathology (AREA)
Crystallography & Structural Chemistry (AREA)
Electromagnetism (AREA)
Analysing Materials By The Use Of Radiation (AREA)
Length-Measuring Devices Using Wave Or Particle Radiation (AREA)

JP2018122155A 2018-06-27 2018-06-27 全反射蛍光ｘ線分析装置及び測定方法 Pending JP2020003306A (ja)

Priority Applications (2)

Application Number	Priority Date	Filing Date	Title
JP2018122155A JP2020003306A (ja)	2018-06-27	2018-06-27	全反射蛍光ｘ線分析装置及び測定方法
PCT/JP2019/014524 WO2020003675A1 (fr)	2018-06-27	2019-04-01	Dispositif d'analyse par fluorescence de rayons x à réflexion totale et procédé de mesure

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2018122155A JP2020003306A (ja)	2018-06-27	2018-06-27	全反射蛍光ｘ線分析装置及び測定方法

Publications (1)

Publication Number	Publication Date
JP2020003306A true JP2020003306A (ja)	2020-01-09

Family

ID=68986999

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2018122155A Pending JP2020003306A (ja)	2018-06-27	2018-06-27	全反射蛍光ｘ線分析装置及び測定方法

Country Status (2)

Country	Link
JP (1)	JP2020003306A (fr)
WO (1)	WO2020003675A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN116379968A (zh) *	2022-12-22	2023-07-04	昆明理工大学	一种xrd阵列探测器测量x射线全反射角的方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH07260712A (ja) *	1994-03-18	1995-10-13	Fujitsu Ltd	試料アライメント方法およびｘ線装置
JPH08274137A (ja) *	1995-03-31	1996-10-18	Matsushita Electric Ind Co Ltd	全反射角度設定方法
WO1997006430A1 (fr) *	1995-08-09	1997-02-20	Asahi Kasei Kogyo Kabushiki Kaisha	Procede et equipement de spectroscopie par fluorescence aux rayons x a reflexion totale
US6173036B1 (en) *	1997-08-01	2001-01-09	Advanced Micro Devices, Inc.	Depth profile metrology using grazing incidence X-ray fluorescence
JP3840503B2 (ja) *	1998-10-21	2006-11-01	理学電機工業株式会社	Ｘ線分析方法および装置
JP2009075018A (ja) *	2007-09-21	2009-04-09	Technos:Kk	蛍光ｘ線分析装置および蛍光ｘ線分析方法
JP2009288016A (ja) *	2008-05-28	2009-12-10	National Institute Of Advanced Industrial & Technology	蛍光ｘ線分析装置及びそれを用いた半導体装置の評価システム

2018
- 2018-06-27 JP JP2018122155A patent/JP2020003306A/ja active Pending
2019
- 2019-04-01 WO PCT/JP2019/014524 patent/WO2020003675A1/fr not_active Ceased

Also Published As

Publication number	Publication date
WO2020003675A1 (fr)	2020-01-02

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WO1997006430A1 (fr)	1997-02-20	Procede et equipement de spectroscopie par fluorescence aux rayons x a reflexion totale
WO2021124859A1 (fr)	2021-06-24	Dispositif d'analyse par fluorescence x à dispersion d'énergie, procédé et programme d'évaluation
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JP2819716B2 (ja)	1998-11-05	Ｘ線分光法による薄膜定量及び膜厚測定法
JP2025074765A (ja)	2025-05-14	Ｘ線測定装置
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