JP2020009799A - トンネル電界効果トランジスタ - Google Patents

トンネル電界効果トランジスタ Download PDF

Info

Publication number
JP2020009799A
JP2020009799A JP2018126659A JP2018126659A JP2020009799A JP 2020009799 A JP2020009799 A JP 2020009799A JP 2018126659 A JP2018126659 A JP 2018126659A JP 2018126659 A JP2018126659 A JP 2018126659A JP 2020009799 A JP2020009799 A JP 2020009799A
Authority
JP
Japan
Prior art keywords
layer
ingaassb
inp
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2018126659A
Other languages
English (en)
Japanese (ja)
Inventor
学 満原
Manabu Mitsuhara
学 満原
拓也 星
Takuya Hoshi
拓也 星
杉山　弘樹
Hiroki Sugiyama
弘樹 杉山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP2018126659A priority Critical patent/JP2020009799A/ja
Priority to PCT/JP2019/025825 priority patent/WO2020009020A1/fr
Publication of JP2020009799A publication Critical patent/JP2020009799A/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2018126659A 2018-07-03 2018-07-03 トンネル電界効果トランジスタ Pending JP2020009799A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2018126659A JP2020009799A (ja) 2018-07-03 2018-07-03 トンネル電界効果トランジスタ
PCT/JP2019/025825 WO2020009020A1 (fr) 2018-07-03 2019-06-28 Transistor à effet de champ à effet tunnel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018126659A JP2020009799A (ja) 2018-07-03 2018-07-03 トンネル電界効果トランジスタ

Publications (1)

Publication Number Publication Date
JP2020009799A true JP2020009799A (ja) 2020-01-16

Family

ID=69060966

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018126659A Pending JP2020009799A (ja) 2018-07-03 2018-07-03 トンネル電界効果トランジスタ

Country Status (2)

Country Link
JP (1) JP2020009799A (fr)
WO (1) WO2020009020A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021240588A1 (fr) * 2020-05-25 2021-12-02 日本電信電話株式会社 Structure de puits quantique contraint, dispositif à semi-conducteur optique et laser à semi-conducteur
WO2022215105A1 (fr) * 2021-04-05 2022-10-13 日本電信電話株式会社 Modulateur optique

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4662345B2 (ja) * 2005-03-28 2011-03-30 日本電信電話株式会社 多重歪量子井戸構造及びその製造方法
JP6531243B2 (ja) * 2015-02-20 2019-06-19 住友化学株式会社 トンネル電界効果トランジスタおよび電界効果トランジスタの製造方法
EP3358604B1 (fr) * 2015-09-30 2024-08-07 Japan Science and Technology Agency Transistor à effet de champ et à effet tunnel

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021240588A1 (fr) * 2020-05-25 2021-12-02 日本電信電話株式会社 Structure de puits quantique contraint, dispositif à semi-conducteur optique et laser à semi-conducteur
JPWO2021240588A1 (fr) * 2020-05-25 2021-12-02
JP7323068B2 (ja) 2020-05-25 2023-08-08 日本電信電話株式会社 歪量子井戸構造、光半導体素子および半導体レーザ
WO2022215105A1 (fr) * 2021-04-05 2022-10-13 日本電信電話株式会社 Modulateur optique
JPWO2022215105A1 (fr) * 2021-04-05 2022-10-13

Also Published As

Publication number Publication date
WO2020009020A1 (fr) 2020-01-09

Similar Documents

Publication Publication Date Title
US7687799B2 (en) Methods of forming buffer layer architecture on silicon and structures formed thereby
US9269577B2 (en) Method for manufacturing nitride semiconductor device
US6852602B2 (en) Semiconductor crystal film and method for preparation thereof
US8653561B2 (en) III-nitride semiconductor electronic device, and method of fabricating III-nitride semiconductor electronic device
US7566898B2 (en) Buffer architecture formed on a semiconductor wafer
KR101729597B1 (ko) 터널 전계 효과 트랜지스터, 그 제조 방법 및 스위치 소자
JP4757370B2 (ja) エピタキシャル基板の製造方法
WO2020009020A1 (fr) Transistor à effet de champ à effet tunnel
JP6531243B2 (ja) トンネル電界効果トランジスタおよび電界効果トランジスタの製造方法
CN110875182B (zh) 一种增大自旋轨道耦合的方法和自旋晶体管
JP5875296B2 (ja) 半導体基板および絶縁ゲート型電界効果トランジスタ
JP2015008244A (ja) ヘテロ接合電界効果型トランジスタおよびその製造方法
JP2013219242A (ja) 半導体薄膜およびその製造方法
JP2000068497A (ja) ＧａＮ系化合物半導体装置
JP7140287B2 (ja) トンネル電界効果トランジスタおよびその製造方法
CN120050969B (zh) 锑化物hemt结构、外延结构及其制备方法
JP6826003B2 (ja) トンネル電界効果トランジスタ
CN108565285B (zh) 一种GaAs基高电子迁移率晶体管材料及其制备方法
JP2006019378A (ja) 半導体素子
JP2012069767A (ja) Ｉｉｉ−ｖ族化合物半導体エピタキシャルウェハ及びその製造方法