JP3051667B2 - Silica glass jig for semiconductor device manufacturing - Google Patents
Silica glass jig for semiconductor device manufacturingInfo
- Publication number
- JP3051667B2 JP3051667B2 JP29381895A JP29381895A JP3051667B2 JP 3051667 B2 JP3051667 B2 JP 3051667B2 JP 29381895 A JP29381895 A JP 29381895A JP 29381895 A JP29381895 A JP 29381895A JP 3051667 B2 JP3051667 B2 JP 3051667B2
- Authority
- JP
- Japan
- Prior art keywords
- silica glass
- jig
- silicon
- glass jig
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims description 58
- 239000004065 semiconductor Substances 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 229910021397 glassy carbon Inorganic materials 0.000 claims description 14
- 238000005260 corrosion Methods 0.000 claims description 13
- 230000007797 corrosion Effects 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- CFOAUMXQOCBWNJ-UHFFFAOYSA-N [B].[Si] Chemical compound [B].[Si] CFOAUMXQOCBWNJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 28
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 19
- 239000010408 film Substances 0.000 description 19
- 238000000034 method Methods 0.000 description 13
- 239000000126 substance Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 239000007789 gas Substances 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- HYBBIBNJHNGZAN-UHFFFAOYSA-N furfural Chemical compound O=CC1=CC=CO1 HYBBIBNJHNGZAN-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- YLQBMQCUIZJEEH-UHFFFAOYSA-N Furan Chemical compound C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- -1 diborane Substances 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Surface Treatment Of Glass (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体装置製造用
のシリカガラス治具、さらに詳しくは半導体素子の製造
における、気相化学反応による成膜工程で使用するウエ
ハ保持用シリカガラス治具に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a silica glass jig for manufacturing a semiconductor device, and more particularly to a silica glass jig for holding a wafer used in a film forming process by a gas phase chemical reaction in manufacturing a semiconductor element.
【０００２】[0002]
【従来技術】従来、半導体素子の製造において、１種以
上の化合物ガスを気相で化学反応させ生成した珪素、窒
化珪素、シリカ等を薄膜状にウエハ上に形成する、いわ
ゆる気相化学反応法（Ｃｈｅｍｉｃａｌ Ｖａｐｏｒ
Ｄｅｐｏｓｉｔｉｏｎ Ｍｅｔｈｏｄ、以下ＣＶＤ法と
いう）が採用されてきた。前記成膜法では高純度が要求
されるところからシリカガラス治具を使用することが多
い。ＣＶＤ法で形成した成膜物質はウエハ表面にとどま
らず前記シリカガラス治具の表面にも堆積する。成膜物
質のうち珪素、窒化珪素は成膜温度である数百度では安
定してシリカガラス表面に付着しているが、室温まで冷
却されると、成膜物質の熱膨張係数がシリカガラスより
大きいことから治具表面に堆積した膜に引張り応力が生
じ、固くて脆いこれらの膜にクラックが発生する。ま
た、成膜物質がシリカの場合は、構成成分が生地のシリ
カガラスと同じところから熱膨張係数の差に基づくクラ
ックの発生は原理的に生じない筈である。しかし、例え
ばＴＥＯＳ（正珪酸四エチルエステル）からＣＶＤ法で
シリカ膜を成膜する場合には、堆積した時化学量論的組
成ではないので、その後の熱処理で化学量論比に近付け
るのが普通である。その時に起こる収縮が原因で膜にク
ラックが発生する。前記珪素、窒化珪素、シリカはシリ
カガラスとの接合が良いところから膜に発生した前記ク
ラックはシリカガラス生地にまで進行し１０μｍに満た
ない厚さの成膜物質の付着で厚さ３ｍｍ以上のシリカガ
ラス管や直径６ｍｍ以上のシリカガラス棒が破断するこ
とが珍しくない。こうした治具の破損を防止するため従
来では治具に付着する成膜物質の引張り応力が大きくな
る前に該成膜物質をフッ化水素酸の溶液で洗浄除去して
いたが、前記溶液による洗浄回数が増すにつれ、シリカ
ガラス治具自体が腐食され痩せてきて寸法精度が悪くな
り所望の均一性を持った被膜をウエハ上に形成すること
ができなくなる等の欠点があった。2. Description of the Related Art Conventionally, in the manufacture of semiconductor devices, a so-called gas-phase chemical reaction method in which silicon, silicon nitride, silica, or the like generated by chemically reacting one or more compound gases in a gas phase is formed in a thin film on a wafer. (Chemical Vapor
Deposition Method (hereinafter referred to as CVD method) has been adopted. In the film forming method, a silica glass jig is often used because high purity is required. The film-forming substance formed by the CVD method is deposited not only on the wafer surface but also on the surface of the silica glass jig. Among the film forming materials, silicon and silicon nitride are stably attached to the silica glass surface at a film forming temperature of several hundred degrees, but when cooled to room temperature, the coefficient of thermal expansion of the film forming material is larger than that of silica glass. As a result, a tensile stress is generated in the films deposited on the jig surface, and cracks are generated in these hard and brittle films. When the film-forming substance is silica, cracks based on the difference in thermal expansion coefficient should not occur in principle from the same place as the constituent glass silica glass. However, when a silica film is formed by a CVD method from TEOS (tetraethyl silicate), for example, the composition is not stoichiometric at the time of deposition, so that the stoichiometric ratio is usually approximated by a subsequent heat treatment. It is. Cracks occur in the film due to the shrinkage that occurs at that time. The silicon, silicon nitride, and silica have good bonding with the silica glass, and the cracks generated in the film progress to the silica glass material, and the silica having a thickness of 3 mm or more is adhered by a deposition material having a thickness of less than 10 μm. It is not uncommon for a glass tube or a silica glass rod having a diameter of 6 mm or more to break. Conventionally, in order to prevent such damage to the jig, the film-forming substance was washed and removed with a hydrofluoric acid solution before the tensile stress of the film-forming substance attached to the jig increased. As the number of times is increased, the silica glass jig itself is corroded and thinned, resulting in poor dimensional accuracy, which makes it impossible to form a film having desired uniformity on a wafer.
【０００３】[0003]
【発明が解決しようとする課題】そこで、上記欠点を解
決するためシリカガラス治具の表面をフッ化水素酸溶液
による腐食に抵抗性をもつ物質で被覆することが特開昭
６２−１３４９３６号公報で提案された。前記被膜形成
物質は窒化珪素、多結晶珪素、無定形珪素、珪素−硼素
であり、これらの物質を均一に被覆することでシリカガ
ラス治具のフッ化水素酸溶液洗浄による腐食を防ぐもの
である。前記耐腐食性の被覆でシリカガラス治具の腐食
は少なくなり治具寿命は長くなったが、シリコンウエハ
を収納する際直接接触する部分、例えばウエハスロット
表面ではウエハの出し入れ時に耐腐食性被膜が破壊さ
れ、パーティクルが発生し、ウエハを汚染するという新
たな問題が発生した。To solve the above-mentioned drawbacks, Japanese Patent Laid-Open No. 62-134936 discloses a method of coating the surface of a silica glass jig with a substance resistant to corrosion by a hydrofluoric acid solution. Was suggested in. The film-forming substances are silicon nitride, polycrystalline silicon, amorphous silicon, and silicon-boron. By uniformly covering these substances, the silica glass jig is prevented from being corroded by washing with a hydrofluoric acid solution. . The corrosion-resistant coating reduced the corrosion of the silica glass jig and prolonged the jig life.However, the corrosion-resistant coating when the silicon wafer was stored and unloaded at the time of loading and unloading the wafer, for example, on the surface of the wafer slot. There is a new problem of destruction, generation of particles, and contamination of the wafer.
【０００４】そこで、本発明者等は、上記問題を解決す
るため鋭意研究を重ねた結果、シリカガラス治具表面に
耐腐食性のアンダーコート層を形成し、さらにガラス状
カーボンのトップコート層を設けることでフッ化水素酸
溶液に対して耐腐食性が良好な上に、パーティクルの発
生のないウエハ載置用シリカガラス治具が得られること
を見出し、本発明を完成したものである。すなわち、Accordingly, the present inventors have conducted intensive studies to solve the above-mentioned problems, and as a result, formed a corrosion-resistant undercoat layer on the surface of a silica glass jig, and further formed a top coat layer of glassy carbon. The present invention has been found to provide a silica glass jig for mounting a wafer having good corrosion resistance against a hydrofluoric acid solution and no generation of particles by providing the jig. Thus, the present invention has been completed. That is,
【０００５】本発明は、フッ化水素酸溶液に対する耐腐
食性をもち、かつパーティクルの発生のない半導体装置
製造用シリカガラス治具を提供することを目的とする。An object of the present invention is to provide a silica glass jig for manufacturing a semiconductor device which has corrosion resistance to a hydrofluoric acid solution and does not generate particles.
【０００６】また、本発明は、ＣＶＤ成膜用シリカガラ
スボートを提供することを目的とする。Another object of the present invention is to provide a silica glass boat for CVD film formation.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成する本発
明は、シリカガラス治具表面に耐腐食性のアンダーコー
ト層及びガラス状カーボンのトップコート層を設けたこ
とを特徴とする半導体装置製造用シリカガラス治具に係
る。According to the present invention, there is provided a semiconductor device manufacturing method comprising providing a silica glass jig with a corrosion-resistant undercoat layer and a glassy carbon topcoat layer on the surface thereof. It relates to a silica glass jig for use.
【０００８】上記のように本発明の半導体装置製造用シ
リカガラス治具では、治具基材の表面にフッ化水素酸溶
液に対し耐腐食性を有するアンダーコート層を設け、さ
らにガラス状カーボンのトップコート層を設けた積層シ
リカガラス治具であるが、前記アンダーコート層を形成
する材料としては、窒化珪素、多結晶珪素、無定形珪
素、珪素−硼素等が挙げられる。前記材料を用いての被
膜の形成は、原料であるシラン、ジシラン、ジボラン又
はそれらの混合物等の原料ガスを０．１〜１．０トール
の減圧下、５００〜９００℃に加熱された領域に供給
し、前記原料ガスの反応により形成された窒化珪素、多
結晶珪素、無定形珪素、珪素−硼素等をシリカガラス治
具表面に堆積させることで行える。該堆積の前に治具基
材の表面を粗にしておくと被膜の接着力が向上し好適で
ある。前記被膜層の厚さは、０．５〜３μｍの範囲がよ
い。層の厚さが０．５μｍ未満では治具の耐腐食性に劣
り、また厚さが３μｍを超えると、治具基材と被膜との
熱膨張係数の差が大きいことから発生した応力で被膜が
破断され、そこから腐食液が浸入しシリカガラス治具基
材を腐食し治具の寿命を短いものにする。As described above, in the silica glass jig for manufacturing a semiconductor device according to the present invention, an undercoat layer having corrosion resistance to a hydrofluoric acid solution is provided on the surface of the jig base material, This is a laminated silica glass jig provided with a top coat layer. Examples of a material for forming the undercoat layer include silicon nitride, polycrystalline silicon, amorphous silicon, and silicon-boron. Formation of a film using the above-mentioned material is performed by heating a raw material gas such as silane, disilane, diborane, or a mixture thereof as a raw material under a reduced pressure of 0.1 to 1.0 Torr to 500 to 900 ° C. It can be supplied by depositing silicon nitride, polycrystalline silicon, amorphous silicon, silicon-boron, or the like formed by the reaction of the source gas on the silica glass jig. It is preferable that the surface of the jig substrate is roughened before the deposition because the adhesion of the coating is improved. The thickness of the coating layer is preferably in the range of 0.5 to 3 μm. When the thickness of the layer is less than 0.5 μm, the jig is inferior in corrosion resistance. When the thickness exceeds 3 μm, the coating is formed by stress generated due to a large difference in thermal expansion coefficient between the jig base material and the coating. Is broken, and a corrosive liquid infiltrates therefrom, corrodes the silica glass jig base material, and shortens the life of the jig.
【０００９】本発明のシリカガラス治具に設けられるガ
ラス状カーボントップコート層は、原料のフラン、フェ
ノール又はそれらの混合物を触媒の存在下で縮合して得
られた樹脂液をアンダーコート層の設けられたシリカガ
ラス治具に塗布し、乾燥固化したのち不活性ガス雰囲気
中、好ましくはアルゴン雰囲気中でシリカガラスの変形
温度以下、すなわち約１１００℃以下の温度で加熱処理
することで形成される。前記トップコート層を形成する
材料としては特にフルフラールとフェノールとの共縮合
樹脂が好ましい。前記トップコート層の厚みは０．７〜
２．５μｍの範囲で選ばれる。層厚が０．７μｍ以上で
あればウエハの出し入れによる膜の破損がなく、発塵が
抑えることができるが、層厚を２．５μｍを超える厚さ
にするためにはガラス状カーボン原料の塗布、炭化工程
を多数繰り返す必要があることからコスト高となり好ま
しくはない。前記方法で形成されたガラス状カーボント
ップコート層にはピンホールの発生は避けられないが、
該ピンホールが存在しても本発明のシリカガラス治具に
は耐腐食性のアンダーコート層が存在することから、フ
ッ化水素酸溶液によるシリカガラス基材の腐食が起こら
ず、治具寿命は長いものとなる。しかも本発明のシリカ
ガラス治具はガラス状カーボンのトップコート層でアン
ダーコート層からのパーティクルの発生を防止でき、シ
リコンエウハの熱処理において該パーティクルによるシ
リコンウエハの汚染がない。特に珪素アンダーコート層
とガラス状カーボン層との組合せは、パーティクルの発
生がなく好適である。The glassy carbon top coat layer provided on the silica glass jig of the present invention is provided with an undercoat layer formed by condensing a raw material furan, phenol or a mixture thereof in the presence of a catalyst. The silica glass jig is applied, dried and solidified, and then heat-treated in an inert gas atmosphere, preferably an argon atmosphere, at a temperature lower than the deformation temperature of the silica glass, that is, about 1100 ° C. or lower. As the material for forming the top coat layer, a co-condensation resin of furfural and phenol is particularly preferable. The thickness of the top coat layer is 0.7 to
It is selected in the range of 2.5 μm. When the layer thickness is 0.7 μm or more, there is no breakage of the film due to the loading and unloading of the wafer and dust generation can be suppressed. However, since the carbonization process needs to be repeated many times, the cost increases, which is not preferable. Although the occurrence of pinholes is inevitable in the glassy carbon top coat layer formed by the above method,
Even if the pinholes are present, the silica glass jig of the present invention has a corrosion-resistant undercoat layer, so that the silica glass substrate is not corroded by the hydrofluoric acid solution, and the jig life is long. It will be long. Moreover, the silica glass jig of the present invention can prevent generation of particles from the undercoat layer in the glassy carbon top coat layer, and there is no contamination of the silicon wafer by the particles in the heat treatment of the silicon wafer. In particular, a combination of a silicon undercoat layer and a glassy carbon layer is preferable because no particles are generated.
【００１０】上記アンダーコート層を形成するに当って
はシリカガラス基材の表面を粗にしておくのがよい。前
記基材表面を粗にする方法としてはサンドブラスト法等
の機械的手段や化学的処理法等を挙げることができる。
化学的処理法では処理液としてはフッ化アンモニウム、
酢酸、さらに必要によりフッ化水素及び水を含有する処
理液が使用されるが、ウエハを汚染する物質の発生がな
い上にシリカガラス基材にクラックを発生させることな
く粗にできるので好適である。前シリカガラス基材の表
面の粗さは中心線平均粗さ（Ｒa）で０．５〜２．０μ
ｍの範囲がよい。前記範囲の粗さは化学的処理法では化
学的処理液にシリカガラス基材を２〜５時間浸漬するこ
とで容易に達成できる。In forming the undercoat layer, the surface of the silica glass substrate is preferably roughened. Examples of the method for roughening the surface of the base material include mechanical means such as a sand blast method, a chemical treatment method, and the like.
In the chemical treatment method, ammonium fluoride,
A processing solution containing acetic acid and, if necessary, hydrogen fluoride and water is used. However, it is preferable because there is no generation of substances that contaminate the wafer and the silica glass substrate can be roughened without generating cracks. . The surface roughness of the pre-silica glass substrate is 0.5 to 2.0 μm in center line average roughness (R a ).
The range of m is good. In the chemical treatment method, the roughness in the above range can be easily achieved by immersing the silica glass substrate in the chemical treatment solution for 2 to 5 hours.
【００１１】本発明の半導体装置製造用シリカガラス治
具は、前記アンダーコート層とガラス状カーボン層との
間に任意の中間膜をその目的に応じて設けることができ
る。本発明のシリカガラス治具表面に有する各層の厚み
は、治具の洗浄目的から堆積物をも含めた一定の厚さに
とどめる必要があるので、できるだけ薄い層に形成する
のがよい。In the silica glass jig for manufacturing a semiconductor device according to the present invention, an arbitrary intermediate film can be provided between the undercoat layer and the glassy carbon layer according to the purpose. Since the thickness of each layer on the surface of the silica glass jig of the present invention needs to be kept at a certain thickness including the deposit for the purpose of cleaning the jig, it is preferable to form the layer as thin as possible.
【００１２】[0012]
【発明の実施の形態】次に実施例に基づいて本発明をさ
らに詳細に説明するが、本発明はこれらの例によって何
ら限定されるものではない。Next, the present invention will be described in more detail with reference to examples, but the present invention is not limited to these examples.
【００１３】実施例１ 図１にシリコンウエハ珪素低圧ＣＶＤ装置を示す。１は
半導体ウエハ、２はシリカガラス製チャンバー、３はシ
リカガラス製ウエハボート、５はガス排気口、６はガス
導入口、７はＲＦ電源である。前記装置に使用するウエ
ハボート３を通常のシリカガラス細工で製造しそれを温
度６３０℃、圧力０．２トールの処理装置内に導入し、
シランガスに１００分間曝した。ウエハボート３の表面
には層厚２．８μｍの珪素膜が形成された。前記珪素被
覆ウエハボート３をフルフラール２モルとフェノール１
モルからなる溶液に浸漬し、乾燥、固化したのちアルゴ
ン雰囲気中で最高１１００℃まで加熱して厚さ１μｍの
ガラス状カーボンのトップコート層４を形成した。Embodiment 1 FIG. 1 shows a silicon wafer silicon low pressure CVD apparatus. 1 is a semiconductor wafer, 2 is a silica glass chamber, 3 is a silica glass wafer boat, 5 is a gas exhaust port, 6 is a gas inlet, and 7 is an RF power supply. The wafer boat 3 used in the apparatus is manufactured by ordinary silica glass work, and is introduced into a processing apparatus having a temperature of 630 ° C. and a pressure of 0.2 Torr,
It was exposed to silane gas for 100 minutes. A 2.8 μm-thick silicon film was formed on the surface of the wafer boat 3. 2 mol of furfural and phenol 1
After being immersed in a solution consisting of mol and dried and solidified, it was heated up to 1100 ° C. in an argon atmosphere to form a topcoat layer 4 of glassy carbon having a thickness of 1 μm.
【００１４】上記ウエハボート３に半導体ウエハ１を載
置しウエハの珪素低圧ＣＶＤ処理を行ったが、パーティ
クルの発生がなく、しかもガラス状カーボン層の剥がれ
もなかった。前記ウエハボートをフッ酸で数回洗浄した
がウエハボートに設けられた溝や孔に拡大がなく、寸法
の安定した治具であった。The semiconductor wafer 1 was placed on the wafer boat 3 and subjected to a silicon low pressure CVD process, but no particles were generated and the glassy carbon layer was not peeled off. The wafer boat was washed several times with hydrofluoric acid. However, the grooves and holes provided in the wafer boat did not expand, and the jig was stable in size.
【００１５】[0015]
【発明の効果】本発明のシリカガラス治具は、耐腐食性
のアンダーコート層とガラス状カーボンのトップコート
層とを有し、フッ化水素酸溶液による処理で腐食される
こともまたパーティクルの発生によるウエハの汚染がな
く、寿命の長い治具である。The silica glass jig of the present invention has a corrosion-resistant undercoat layer and a glassy carbon topcoat layer, and is not corroded by treatment with a hydrofluoric acid solution. The jig has a long life without contamination of the wafer due to generation.
【図１】図１は、ウエハ支持部を珪素膜をアンダーコー
トとしガラス状カーボン被膜したシリコンウエハ珪素低
圧ＣＶＤ装置の概略図である。FIG. 1 is a schematic view of a silicon wafer silicon low-pressure CVD apparatus in which a wafer supporting portion has a silicon film as an undercoat and a glassy carbon film is coated.
１ 半導体ウエハ ２ シリカガラス製チャンバー ３ シリカガラス製ウエハボート ４ 珪素膜をアンダーコートとするガラス状カーボン
被膜 ５ ガス排気口 ６ ガス導入口 ７ ＲＦ電源REFERENCE SIGNS LIST 1 semiconductor wafer 2 silica glass chamber 3 silica glass wafer boat 4 glassy carbon coating with silicon film as undercoat 5 gas exhaust port 6 gas inlet 7 RF power supply
フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) C03C 15/00 - 23/00 H01L 21/205 H01L 21/3065 H01L 21/304 Continuation of the front page (58) Field surveyed (Int. Cl. 7 , DB name) C03C 15/00-23/00 H01L 21/205 H01L 21/3065 H01L 21/304
Claims (3)
ーコート層及びガラス状カーボンのトップコート層を設
けたことを特徴とする半導体装置製造用シリカガラス治
具。1. A silica glass jig for manufacturing a semiconductor device, wherein a corrosion-resistant undercoat layer and a top coat layer of glassy carbon are provided on the surface of the silica glass jig.
−硼素又はそれらの組合せのいずれか１の層からなり、
その層厚が０．５〜３μｍであることを特徴とする請求
項１記載の半導体装置製造用シリカガラス治具。2. An undercoat layer comprising one of silicon, silicon nitride, silicon-boron and a combination thereof.
The silica glass jig for manufacturing a semiconductor device according to claim 1, wherein the layer thickness is 0.5 to 3 µm.
０．７〜２．５μｍであることを特徴とする請求項１記
載の半導体装置製造用シリカガラス治具。3. The silica glass jig for manufacturing a semiconductor device according to claim 1, wherein the thickness of the glassy carbon top coat layer is 0.7 to 2.5 μm.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29381895A JP3051667B2 (en) | 1995-10-18 | 1995-10-18 | Silica glass jig for semiconductor device manufacturing |
| EP96114052A EP0763504B1 (en) | 1995-09-14 | 1996-09-03 | Silica glass member and method for producing the same |
| US08/714,209 US5807416A (en) | 1995-09-14 | 1996-09-16 | Silica glass member with glassy carbon coating method for producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29381895A JP3051667B2 (en) | 1995-10-18 | 1995-10-18 | Silica glass jig for semiconductor device manufacturing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09110475A JPH09110475A (en) | 1997-04-28 |
| JP3051667B2 true JP3051667B2 (en) | 2000-06-12 |
Family
ID=17799558
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29381895A Expired - Fee Related JP3051667B2 (en) | 1995-09-14 | 1995-10-18 | Silica glass jig for semiconductor device manufacturing |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3051667B2 (en) |
-
1995
- 1995-10-18 JP JP29381895A patent/JP3051667B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH09110475A (en) | 1997-04-28 |
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