JP3601340B2 - エピタキシャルシリコンウエーハおよびその製造方法並びにエピタキシャルシリコンウエーハ用基板 - Google Patents

エピタキシャルシリコンウエーハおよびその製造方法並びにエピタキシャルシリコンウエーハ用基板 Download PDF

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Publication number
JP3601340B2
JP3601340B2 JP02376599A JP2376599A JP3601340B2 JP 3601340 B2 JP3601340 B2 JP 3601340B2 JP 02376599 A JP02376599 A JP 02376599A JP 2376599 A JP2376599 A JP 2376599A JP 3601340 B2 JP3601340 B2 JP 3601340B2
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Japan
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region
single crystal
silicon wafer
epitaxial
crystal
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Expired - Lifetime
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JP02376599A
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English (en)
Japanese (ja)
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JP2000219598A (ja
Inventor
亮二 星
将 園川
昌弘 桜田
友彦 太田
泉 布施川
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Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
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Priority to JP02376599A priority Critical patent/JP3601340B2/ja
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to PCT/JP2000/000379 priority patent/WO2000046433A1/ja
Priority to EP00901901A priority patent/EP1069214B1/de
Priority to KR1020007010819A priority patent/KR100642878B1/ko
Priority to US09/646,713 priority patent/US6565822B1/en
Priority to DE60043967T priority patent/DE60043967D1/de
Priority to TW089101654A priority patent/TW546425B/zh
Publication of JP2000219598A publication Critical patent/JP2000219598A/ja
Application granted granted Critical
Publication of JP3601340B2 publication Critical patent/JP3601340B2/ja
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP02376599A 1999-02-01 1999-02-01 エピタキシャルシリコンウエーハおよびその製造方法並びにエピタキシャルシリコンウエーハ用基板 Expired - Lifetime JP3601340B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP02376599A JP3601340B2 (ja) 1999-02-01 1999-02-01 エピタキシャルシリコンウエーハおよびその製造方法並びにエピタキシャルシリコンウエーハ用基板
EP00901901A EP1069214B1 (de) 1999-02-01 2000-01-26 Epitaktischer siliziumwafer und herstellungsverfahren und substrat für epitaktischen siliziumwafer
KR1020007010819A KR100642878B1 (ko) 1999-02-01 2000-01-26 에피텍셜 실리콘 웨이퍼 및 그 제조방법, 그리고 에피텍셜실리콘 웨이퍼용 기판
US09/646,713 US6565822B1 (en) 1999-02-01 2000-01-26 Epitaxial silicon wafer, method for producing the same and subtrate for epitaxial silicon wafer
PCT/JP2000/000379 WO2000046433A1 (fr) 1999-02-01 2000-01-26 Plaquette de silicium epitaxiale et son procede de fabrication ; substrat pour plaquette de silicium epitaxiale
DE60043967T DE60043967D1 (de) 1999-02-01 2000-01-26 Epitaktischer siliziumwafer und herstellungsverfahren und substrat für epitaktischen siliziumwafer
TW089101654A TW546425B (en) 1999-02-01 2000-01-31 Epitaxial silicon wafer, method for producing the same and substrate for epitaxial silicon wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP02376599A JP3601340B2 (ja) 1999-02-01 1999-02-01 エピタキシャルシリコンウエーハおよびその製造方法並びにエピタキシャルシリコンウエーハ用基板

Publications (2)

Publication Number Publication Date
JP2000219598A JP2000219598A (ja) 2000-08-08
JP3601340B2 true JP3601340B2 (ja) 2004-12-15

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Family Applications (1)

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JP02376599A Expired - Lifetime JP3601340B2 (ja) 1999-02-01 1999-02-01 エピタキシャルシリコンウエーハおよびその製造方法並びにエピタキシャルシリコンウエーハ用基板

Country Status (7)

Country Link
US (1) US6565822B1 (de)
EP (1) EP1069214B1 (de)
JP (1) JP3601340B2 (de)
KR (1) KR100642878B1 (de)
DE (1) DE60043967D1 (de)
TW (1) TW546425B (de)
WO (1) WO2000046433A1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4463950B2 (ja) * 2000-08-11 2010-05-19 信越半導体株式会社 シリコンウエーハの製造方法
JP2002064102A (ja) * 2000-08-15 2002-02-28 Wacker Nsce Corp シリコン単結晶基板並びにエピタキシャルシリコンウエハおよびその製造方法
JP4683171B2 (ja) * 2000-10-25 2011-05-11 信越半導体株式会社 半導体ウェーハの評価方法
JP4465141B2 (ja) 2002-01-25 2010-05-19 信越半導体株式会社 シリコンエピタキシャルウェーハ及びその製造方法
JP4196602B2 (ja) 2002-07-12 2008-12-17 信越半導体株式会社 エピタキシャル成長用シリコンウエーハ及びエピタキシャルウエーハ並びにその製造方法
JP4236243B2 (ja) * 2002-10-31 2009-03-11 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコンウェーハの製造方法
TW200428637A (en) * 2003-01-23 2004-12-16 Shinetsu Handotai Kk SOI wafer and production method thereof
KR100680242B1 (ko) * 2004-12-29 2007-02-07 주식회사 실트론 실리콘 단결정의 성장 방법
JP4760822B2 (ja) * 2007-12-14 2011-08-31 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの製造方法
KR100983195B1 (ko) * 2007-12-28 2010-09-20 주식회사 실트론 2차원 선결함이 제어된 실리콘 잉곳, 웨이퍼, 에피택셜웨이퍼와, 그 제조방법 및 제조장치
WO2014041736A1 (ja) * 2012-09-13 2014-03-20 パナソニック株式会社 窒化物半導体構造物
JP6354643B2 (ja) * 2015-04-06 2018-07-11 信越半導体株式会社 シリコン単結晶の製造方法
JP6680108B2 (ja) * 2016-06-28 2020-04-15 株式会社Sumco シリコン単結晶の製造方法
DE102017213587A1 (de) 2017-08-04 2019-02-07 Siltronic Ag Halbleiterscheibe aus einkristallinem Silizium und Verfahren zur Herstellung der Halbleiterscheibe
JP7393900B2 (ja) * 2019-09-24 2023-12-07 一般財団法人電力中央研究所 炭化珪素単結晶ウェハ及び炭化珪素単結晶インゴットの製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3552278B2 (ja) * 1994-06-30 2004-08-11 三菱住友シリコン株式会社 シリコン単結晶の製造方法
JP3366766B2 (ja) * 1995-01-25 2003-01-14 ワッカー・エヌエスシーイー株式会社 シリコン単結晶の製造方法
JP3085146B2 (ja) 1995-05-31 2000-09-04 住友金属工業株式会社 シリコン単結晶ウェーハおよびその製造方法
EP1273684B1 (de) * 1997-04-09 2005-09-14 MEMC Electronic Materials, Inc. Freistellenbeherrschendes Silizium mit niedriger Fehlerdichte
JPH1179889A (ja) * 1997-07-09 1999-03-23 Shin Etsu Handotai Co Ltd 結晶欠陥が少ないシリコン単結晶の製造方法、製造装置並びにこの方法、装置で製造されたシリコン単結晶とシリコンウエーハ
JP3292101B2 (ja) * 1997-07-18 2002-06-17 信越半導体株式会社 珪素単結晶基板表面の平滑化方法
JPH11130592A (ja) * 1997-10-29 1999-05-18 Komatsu Electron Metals Co Ltd シリコン単結晶の製造方法
JP3596257B2 (ja) * 1997-11-19 2004-12-02 三菱住友シリコン株式会社 シリコン単結晶ウェーハの製造方法
JPH11268987A (ja) * 1998-03-20 1999-10-05 Shin Etsu Handotai Co Ltd シリコン単結晶およびその製造方法
US6077343A (en) * 1998-06-04 2000-06-20 Shin-Etsu Handotai Co., Ltd. Silicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing it
JP3601324B2 (ja) * 1998-11-19 2004-12-15 信越半導体株式会社 結晶欠陥の少ないシリコン単結晶ウエーハ及びその製造方法

Also Published As

Publication number Publication date
JP2000219598A (ja) 2000-08-08
EP1069214A1 (de) 2001-01-17
KR20010042278A (ko) 2001-05-25
EP1069214A4 (de) 2007-01-24
WO2000046433A1 (fr) 2000-08-10
US6565822B1 (en) 2003-05-20
KR100642878B1 (ko) 2006-11-10
DE60043967D1 (de) 2010-04-22
EP1069214B1 (de) 2010-03-10
TW546425B (en) 2003-08-11

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