JP3673435B2 - Package for storing semiconductor elements - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor element housing package for housing semiconductor elements such as ICs and LSIs.
[0002]
[Prior art]
A conventional semiconductor element storage package (hereinafter referred to as a semiconductor package) is shown in FIGS. In these drawings, reference numeral 21 denotes a dielectric substrate made of a dielectric material such as alumina ceramics, and forms a main body of the semiconductor package. Reference numeral 22 denotes a surface opposite to the mounting surface (upper surface) of the semiconductor element of the dielectric substrate 21 ( A ground terminal 23 connected to the ground metallization layer 26 through the through hole 24 and connected to the bottom surface of the dielectric substrate 21 and connected to the signal metallization layer 27 through the through hole 25. Lead terminals for use, 24 is a through hole for grounding, and 25 is a through hole for signals.
[0003]
Reference numeral 26 denotes a ground metallization layer deposited on the mounting surface of the semiconductor element of the dielectric substrate 21, and 27 denotes a signal line connection such as a bonding wire connected to an input / output electrode of the semiconductor element. The signal metallization layer 28 is formed on the side end face of the dielectric substrate 21, and the ground side metallization layer 29 connected to the ground terminal 22 is covered on the other side end face of the dielectric substrate 21. It is a side metallization layer for grounding that is formed and functions as an electromagnetic shield.
[0004]
A semiconductor element such as an IC or LSI is mounted and fixed on the ground metallization layer 26 at the center of the upper surface of the dielectric substrate 21, and the input / output electrodes thereof are signals such as flip chip connection structures and bonding wires. The line is connected to the signal metallization layer 27. In some cases, the periphery of the lid is bonded to the periphery of the upper surface of the dielectric substrate 21 on which the semiconductor element is mounted, and the lid is not shown.
[0005]
As another conventional example, a portion corresponding to an RF (Radio Frequency) signal input / output terminal is provided with a substrate formed of a dielectric, and a microwave integrated circuit is provided on the substrate so as to surround at least an RF signal. In a microwave package comprising a wall body covered with a lid whose portion corresponding to an input / output terminal is formed of a dielectric, a gap is provided to the RF signal input / output terminal with respect to the dielectric of the wall body Therefore, an RF signal is propagated by a coupling capacitance between strip lines of an RF signal input / output terminal to prevent an increase in resistance and reduce propagation loss (conventional example 1: Japanese Patent Laid-Open No. 5-3401). Issue gazette).
[0006]
[Problems to be solved by the invention]
However, since the conventional example shown in FIGS. 5 and 6 has a structure in which the grounding through hole 24 is formed in the dielectric substrate 21, the through hole 24 and the through hole are formed in the semiconductor package for high frequency signals. Therefore, the electromagnetic shielding performance deteriorates, and an insertion loss (insertion loss) due to the dielectric of the high frequency signal occurs.
[0007]
In addition, although the grounding side metallization layer 29 is formed on the side end face of the dielectric substrate 21 as an electromagnetic shield against electromagnetic waves such as external high-frequency signals, the electromagnetic shielding property can be enhanced. The layer 29 could only be partially formed on the side end face of the dielectric substrate 21. This is because a large number of such dielectric substrates 21 are often manufactured from a large mother substrate, and in this case, a metallized layer can be deposited only on the castellation portion. Furthermore, after dividing each dielectric substrate 21 from the mother substrate, printing and applying a metal paste for the metallization layer on the side end surface of the dielectric substrate 21 is not easy to work, and it takes time and effort in the manufacturing process. Therefore, productivity and yield are reduced.
[0008]
In Conventional Example 1, the loss of isolation and insertion has increased due to leakage of high-frequency signals between through holes. That is, a high-frequency signal leaks to the dielectric end face, and noise from the outside easily penetrates and affects the high-frequency signal to be used, thereby increasing the loss.
[0009]
Therefore, the present invention has been completed in view of the above circumstances, and an object of the present invention is to suppress the deterioration of the electromagnetic shielding property due to the dielectric existing between the signal through hole and the ground through hole. The insertion loss is reduced, the propagation speed of the high-frequency signal is improved, and the workability at the time of manufacturing is improved to improve the productivity and the manufacturing yield.
[0010]
[Means for Solving the Problems]
The package for housing a semiconductor element of the present invention includes a metal substrate having a semiconductor element mounting portion at the center of the upper surface and a notch for fitting a terminal member passing through the upper and lower peripheral portions of the upper surface. A dielectric substrate having substantially the same size as the notch is formed with a through conductor penetrating the upper and lower surfaces, a signal metallization layer connected to the through conductor is formed on the upper and lower surfaces, respectively, and wherein the signal supplying metallized layer dielectric substrate signal lead terminals extending outwardly are joined in Rutotomoni, metallized layer from the periphery of the signal metallization layer and the signal lead terminals on the lower surface side to the peripheral portion is deposited, become more metallized layers on both side faces the signal lead terminal is adjacent to the side of the side extending outwardly is deposited, the metal substrate wherein the signal lead terminals from said notch A terminal member fitted into the notch so as to extend outward, and a signal lead connected to the lower surface of the metal substrate so as to surround the signal lead terminal of the terminal member on the notch side. And a ground metal plate having a ground lead terminal disposed substantially parallel to the terminal.
[0011]
The present invention is configured so that the dielectric existing between the signal path and the ground potential part is reduced by the above configuration, so that the signal path part and the ground potential part are electromagnetically coupled and capacitance via the dielectric. It is possible to suppress the deterioration of the electromagnetic shielding properties by coupling, thereby reducing the loss of the high frequency signal and improving the propagation speed of the high frequency signal. In addition, there is an effect that the workability at the time of manufacturing is improved to improve the productivity and the manufacturing yield.
[0012]
The package for housing a semiconductor element of the present invention houses a semiconductor element inside, and has a metal frame having a notch passing through the side on the lower surface of the side, and the same as the notch of the metal frame A dielectric substrate having a cross-sectional area is formed with through conductors penetrating the upper and lower surfaces, signal metallization layers connected to the through conductors are respectively formed on the upper and lower surfaces, and the signal metallization layer on the lower surface side said dielectric signal lead terminals extending outwardly of the substrate is bonded Rutotomoni, metallized layer is deposited from a periphery of the signal metallization layer and the signal lead terminals on the lower surface side to the peripheral portion, for further the signal become metallized layer on both side surfaces lead terminal adjacent to the side of the side extending outwardly is deposited, extending the signal lead terminals to the outside of the metal frame from the notch A terminal member fitted in the cutout portion, and the signal lead terminal of the terminal member so as to surround each of the signal lead terminals of the terminal member on the lower surface of the metal frame body on the cutout portion side. And a metal substrate provided with a mounting portion for mounting the semiconductor element at the center of the upper surface thereof.
[0013]
With such a configuration, in addition to the above-described effect of improving the electromagnetic shielding properties, only one metal plate is required for installing the terminal member, and the configuration is further simplified and reduced in cost, and the semiconductor element is made of a metal frame. Since it can be stored in the enclosed space, the overall height is reduced.
[0014]
DETAILED DESCRIPTION OF THE INVENTION
A semiconductor package P of the present invention is shown in FIGS. 1 is a perspective view of the upper surface side of the semiconductor package P, FIG. 2 is a perspective view of the lower surface side of the semiconductor package P, FIG. 3A is a perspective view of the upper surface side of the terminal member for the semiconductor package P, and FIG. ) Is a perspective view of the lower surface side of the terminal member, FIG. 3C is a sectional view taken along line BB of FIG. 4A, and FIG. 4 is a perspective view of the upper surface side of the semiconductor package P1 according to another embodiment of the present invention. It is.
[0015]
In FIG. 1 to FIG. 3, reference numeral 1 denotes a signal metallization layer 7, 12 formed with through conductors 8 such as through holes and via holes penetrating the upper and lower surfaces, and formed on the upper and lower surfaces connected to the through conductors 8. The signal input terminal member and the signal output terminal member 2 have a semiconductor element mounting portion 2a at the center of the upper surface, and terminal members 1 and 1 that fit vertically through the peripheral portion of the upper surface. This is a metal substrate having two notches 1a and 1a. Further, 3 is a metal frame as a sealing ring for sealing a lid joined to the peripheral portion of the upper surface of the metal substrate 2 by a brazing material or the like, and 4 is a signal of the terminal members 1 and 1 on the lower surface of the metal substrate 2. A ground metal plate having ground lead terminals 6 which are joined so as to surround the lead terminals 5 and 5 on the side of the notches 1a and 1a and which are disposed substantially parallel to the signal lead terminals 5 and 5 It is.
[0016]
Further, 5 is joined to the signal metallization layer 12 on the lower surface side of each of the terminal members 1 and 1, and extends to the outside of the dielectric substrate for the terminal members 1 and 1 having approximately the same size as the notches 1a and 1a. A signal lead terminal 6 is connected to the through conductor 8 and is formed on the upper surface of the terminal member 1. The ground lead terminal 6 is formed adjacent to both sides of the signal lead terminals 5 and 5 in parallel. The signal metallization layer 8 is a through conductor such as a through hole or a via hole, and 13 is a metallization layer that is attached to the entire side surface of the metal substrate 2 and joins the metal frame 3 to the metal substrate 2. In addition, after mounting a semiconductor element in the center part of the upper surface of the metal substrate 2, the peripheral part of a cover body is joined and sealed to the upper surface of the metal frame 3, but the cover body is not shown in figure.
[0017]
In the present invention, the terminal members 1 and 1 are made of alumina (Al ₂ O ₃ ) ceramics, aluminum nitride (AlN) ceramics, mullite (3Al ₂ O ₃ .2SiO ₂ ) ceramics, silicon carbide (SiC) ceramics, forsterite (2MgO.multidot. SiO ₂₎ ceramics, zirconia (ZrO ₂₎ ceramics, steatite _{(3MgO · 4SiO 2 · H 2} O) ceramics, cordierite _{(2MgO · 2Al 2 O 3 ·} 5SiO 2) ceramics, beryllia (BeO) ceramic, quartz, It is preferable to be made of a dielectric substrate such as glass or glass ceramic, which has a low dielectric loss (tan δ) of a high-frequency signal. The terminal members 1 and 1 are fitted into a notch 1a formed in a complementary shape on the metal substrate 2 and joined by a metal brazing material or the like.
[0018]
Further, as shown in FIG. 3A, the terminal member 1 has a metallized layer 9 attached to the edge of the upper surface of the terminal member 1 on the signal lead terminal 5 side to be bonded to the metal frame 3, and the upper surface thereof. A central portion includes a through conductor 8 penetrating the upper and lower surfaces and a signal metallization layer 7 formed to be connected to the through conductor 8. On both side surfaces adjacent to the side surface of the terminal member 1 on the signal lead terminal 5 side, a metallized layer 10 for bonding to the metal substrate 2 is attached. Further, as shown in FIGS. 2B and 2C, the lower surface of the terminal member 1 is formed so as to extend from the center portion to the end portion on the signal lead terminal 5 side and is connected to the signal lead terminal 5. The signal metallization layer 12 and the metallization layer 11 formed from the periphery of the signal metallization layer 12 to the periphery thereof are attached, and the signal metallization layer 12 is formed as a through conductor at the center of the lower surface of the terminal member 1. 8 is connected.
[0019]
Although this terminal member 1 is formed in a rectangular parallelepiped shape as shown in FIG. 3, it is not limited to a rectangular parallelepiped shape, but may have various shapes such as a columnar shape, a polygonal columnar shape such as a triangular prism shape, and a truncated cone shape. That is, any shape having a surface exposed on the upper and lower surfaces of the metal substrate 2 may be used.
[0020]
The materials of the metal substrate 2, the ground metal plate 4 and the metal frame 3 are copper (Cu) -tungsten (W) alloy, SUS (stainless steel), iron (Fe) -nickel (Ni) -cobalt (Co) alloy (Kovar) ), Iron (Fe) -nickel (Ni) alloy, and other Cu-Mo, Cu, Ni, Mo, Fe, or Cu-based alloys containing Cu as a main component are preferable. Excellent.
[0021]
In the present embodiment, the signal lead terminal 5 is provided so as to extend outward from the semiconductor package along the main surface direction of the ground metal plate 4, but along the direction perpendicular to the main surface of the ground metal plate 4. It may be provided so as to extend outward, for example, downward. In this case, the ground lead terminal 6 can also be provided substantially parallel to the signal lead terminal 5 along a direction perpendicular to the main surface of the ground metal plate 4. Further, although the ground lead terminals 6 are provided substantially in parallel adjacent to both sides of the signal lead terminals 5, the ground lead terminals 6 may be provided only on one side of the signal lead terminals 5. However, it is preferable to provide the ground lead terminals 6 on both sides of the signal lead terminal 5, and the signal loss is small and the transmission characteristics are good.
[0022]
The signal metallization layers 7 and 12 and the metallization layers 9, 10, 11, and 13 of the present invention are metal pastes containing particles of known metals such as W, Mo—Mn, Pd, Pt, Ti, Au, or alloys. Is applied and fired, or deposited by sputtering. In the case of Mo-Mn paste applied and fired, Ni plating is applied and joined to other members with an Ag-Cu eutectic alloy brazing material, or Ni plating or Au plating is applied, and Au-Sn alloy brazing material is used. It joins with the member. Further, in the case where a Ti layer, a Pt layer, and an Au layer are formed by sputtering, they are joined to other members by an Au—Sn alloy brazing material.
[0023]
The through conductor 8 is a through hole, a via hole, or the like, and a through hole is formed at a predetermined position of the terminal member 1, and a metal paste is applied to the inner surface of the through hole in the same manner as the metallized layer and fired, or metal plating is performed. By forming a layer, a through hole is created. Further, when the via hole is formed, it can be formed by filling the through-hole with a metal paste and firing, or filling the inside of the through-hole with the metal paste and further filling with molten metal.
[0024]
As a second embodiment of the present invention, a configuration as shown in FIG. 4 may be adopted. In the second embodiment, instead of the metal substrate 2 of FIG. 1, a metal frame 3 a having two cutout portions 14 and 14 penetrating the side portions and containing a semiconductor element inside is provided. is there. A terminal member 1 having the same cross-sectional area as the cutout portion 14 of the metal frame 3a is fitted into the cutout portions 14 and 14, and the signal leads of the terminal members 1 and 1 are further provided on the lower surface of the metal frame 3a. Each of the terminals 5 is joined so as to surround each of the notches 14, and has a ground lead terminal 6 disposed substantially parallel to the signal lead terminal 5, and a semiconductor at the center of the upper surface thereof This is a configuration including a metal substrate 4a provided with an element mounting portion 4b, and the other configuration is the same as that of FIG. According to the second embodiment, the metal substrate 2 of FIG. 1 is not required, the configuration is simplified and the manufacturing can be performed at low cost, and the semiconductor element is accommodated in the space surrounded by the metal frame 3a. As a result, the overall height is reduced.
[0025]
In this second embodiment, the portion fitted into the cutout portion 14 of the terminal member 1 has the same cross-sectional area as the cutout portion 14, but the other portions have exactly the same shape as the cutout portion 14, For example, a part of the terminal member 1 may protrude outward from the metal frame 3a.
[0026]
In the embodiment of FIGS. 1 and 4, there are two notches 1 a and 14, but the number is not limited to two, and one or more can be provided.
[0027]
In the present invention, the distance between the signal lead terminal 5 and the ground lead terminal 6 is preferably at least 1/32 of the wavelength of the high-frequency signal to be used. The lead terminal 5 and the ground lead terminal 6 are easily capacitively coupled and electromagnetically coupled, and the loss of high-frequency signals increases. The semiconductor package of the present invention is suitable for use in a high frequency band of 10 GHz or higher.
[0028]
Thus, the present invention is configured such that the dielectric existing between the signal path and the ground potential part is reduced, so that the signal path part and the ground potential part are electromagnetically coupled and capacitively coupled via the dielectric. It is possible to suppress the deterioration of the electromagnetic shielding property, reduce the insertion loss of the high frequency signal, and improve the propagation speed of the high frequency signal. In addition, there is an effect that the workability at the time of manufacturing is improved and the productivity and the manufacturing yield are increased.
[0029]
In addition, this invention is not limited to said embodiment, A various change does not interfere in the range which does not deviate from the summary of this invention.
[0030]
【The invention's effect】
The present invention relates to a metal substrate having a semiconductor element mounting portion at the center of the upper surface, a notch portion for fitting a terminal member passing through the upper and lower edges of the upper surface, and a dielectric having approximately the same size as the notch portion. The substrate is formed with through conductors that penetrate the upper and lower surfaces, signal metallization layers connected to the through conductors are formed on the upper and lower surfaces, respectively, and the signal metallization layer on the lower surface side extends outside the dielectric substrate. lead terminals are joined Rutotomoni, metallized layer is deposited from the surrounding lower surface side signal metallization layer and the signal lead terminal toward the peripheral portion, both side surfaces further signal lead terminal is adjacent to the side of the side extending outwardly metallization layer is deposited on become, its a terminal member which is fitted in the notch so that the signal lead terminal extending from the notch to the outside of the metal substrate, a signal lead terminal for the lower surface of the metal substrate A grounding metal plate having a ground lead terminal disposed adjacent to and parallel to the signal lead terminal and being joined so as to surround each of the notch portions. Suppresses electromagnetic shielding and capacitive coupling with the ground potential part via a dielectric, thereby reducing electromagnetic shielding, reducing high-frequency signal insertion loss, improving high-frequency signal propagation speed, and manufacturing operations This improves the productivity and increases the production yield.
[0031]
The present invention also includes a metal frame having a cutout portion penetrating the side portion on the lower surface of the side portion and a dielectric substrate having the same cross-sectional area as the cutout portion. A signal metallization layer connected to the through-conductors is formed on the upper and lower surfaces, and a signal lead terminal extending outside the dielectric substrate is joined to the signal metallization layer on the lower surface side. In addition, the metallization layer is applied from the periphery of the signal metallization layer and the signal lead terminal on the lower surface side to the periphery, and the metallization layer is applied to both side surfaces adjacent to the side surface on the side where the signal lead terminal extends outward. made is wearing, a terminal member that is fitted to the cutout portion so as to extend to the outside of the metal frame from the signal lead terminal notch, the lead terminal signal to the lower surface of the metal frame, respectively notch A metal substrate having a ground lead terminal disposed so as to be adjacent to and in parallel with the signal lead terminal and having a semiconductor element mounting portion at the center of the upper surface thereof. In addition to the above-described effect of improving the electromagnetic shielding properties, a single metal plate for installing the terminal member is sufficient, and the structure is further simplified and reduced in cost, and the semiconductor element is made of metal. Since it can be accommodated in the space surrounded by the frame, it has the effect of reducing the overall height.
[Brief description of the drawings]
FIG. 1 is a perspective view of an upper surface side of a semiconductor package of the present invention.
FIG. 2 is a view of the lower surface side of the semiconductor package of the present invention.
3A and 3B show a terminal member for a semiconductor package according to the present invention, in which FIG. 3A is a perspective view of the upper surface side of the terminal member, FIG. 3B is a perspective view of the lower surface side of the terminal member, and FIG. It is sectional drawing in the BB line.
FIG. 4 is a perspective view of an upper surface side of a semiconductor package according to a second embodiment of the present invention.
FIG. 5 is a top perspective view of a conventional semiconductor package.
6 is a cross-sectional view taken along line AA in FIG.
[Explanation of symbols]
1: Terminal member 2: Metal substrate 3: Metal frame 3a: Metal frame 4: Ground metal plate 5: Signal lead terminal 6: Ground lead terminal 7: Signal metallization layer 8: Through conductor 12: Signal metallization layer

Claims (2)

A metal substrate having a semiconductor element mounting portion at the center of the upper surface, and a peripheral portion of the upper surface having a notch for fitting a terminal member that penetrates the upper and lower sides thereof;
A dielectric substrate having substantially the same size as the notch of the metal substrate is formed with through conductors penetrating the upper and lower surfaces, and a signal metallization layer connected to the through conductors is formed on the upper and lower surfaces, respectively. metallized layer toward the peripheral portion and the lower surface of said the signal metallization layer dielectric signal lead terminals extending outwardly of the substrate is bonded Rutotomoni, from the periphery of the signal metallization layer and the signal lead terminals on the lower surface side There is deposited, become more metallized layers on both side faces the signal lead terminal is adjacent to the side of the side extending outwardly is adhered, the signal lead terminals extending outwardly of the metallic substrate from the notch A terminal member fitted in the notch,
The signal lead terminals of the terminal member are joined to the lower surface of the metal substrate so as to surround each of the notch portions, and ground lead terminals disposed substantially parallel to the signal lead terminals are provided. A package for housing a semiconductor element, comprising: a ground metal plate. A metal frame that houses a semiconductor element on the inside and has a notch penetrating the side on the lower surface of the side,
A dielectric substrate having the same cross-sectional area as the notch of the metal frame is formed with through conductors penetrating the upper and lower surfaces, and signal metallization layers connected to the through conductors are formed on the upper and lower surfaces, respectively. and metallized lower side of said the signal metallization layer dielectric signal lead terminals extending outwardly of the substrate is bonded Rutotomoni, from the periphery of the signal metallization layer and the signal lead terminals on the lower surface side to the peripheral portion layer is deposited, comprises is further deposited metallization layer on both sides by the signal lead terminal is adjacent to the side of the side extending outwardly, outside the metal frame the signal lead terminals from said notch A terminal member fitted into the notch so as to extend to
A ground lead terminal that is joined to the lower surface of the metal frame so as to surround the signal lead terminal of the terminal member on the cutout side, and is disposed substantially parallel to the signal lead terminal. And a metal substrate provided with a mounting portion of the semiconductor element at the center of the upper surface thereof.

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