JP3738799B2 - アクティブマトリクス基板の製造方法，アクティブマトリクス基板および液晶表示装置 - Google Patents

アクティブマトリクス基板の製造方法，アクティブマトリクス基板および液晶表示装置 Download PDF

Info

Publication number
JP3738799B2
JP3738799B2 JP33787597A JP33787597A JP3738799B2 JP 3738799 B2 JP3738799 B2 JP 3738799B2 JP 33787597 A JP33787597 A JP 33787597A JP 33787597 A JP33787597 A JP 33787597A JP 3738799 B2 JP3738799 B2 JP 3738799B2
Authority
JP
Japan
Prior art keywords
layer
substrate
active matrix
pixel electrode
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP33787597A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10206896A (ja
JPH10206896A5 (2
Inventor
聡 井上
達也 下田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP33787597A priority Critical patent/JP3738799B2/ja
Publication of JPH10206896A publication Critical patent/JPH10206896A/ja
Publication of JPH10206896A5 publication Critical patent/JPH10206896A5/ja
Application granted granted Critical
Publication of JP3738799B2 publication Critical patent/JP3738799B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/093—Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/743—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7432—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Landscapes

  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
JP33787597A 1996-11-22 1997-11-21 アクティブマトリクス基板の製造方法，アクティブマトリクス基板および液晶表示装置 Expired - Fee Related JP3738799B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33787597A JP3738799B2 (ja) 1996-11-22 1997-11-21 アクティブマトリクス基板の製造方法，アクティブマトリクス基板および液晶表示装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP32768896 1996-11-22
JP8-327688 1996-11-22
JP33787597A JP3738799B2 (ja) 1996-11-22 1997-11-21 アクティブマトリクス基板の製造方法，アクティブマトリクス基板および液晶表示装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2003424183A Division JP3738850B2 (ja) 1996-11-22 2003-12-22 アクティブマトリクス基板および液晶表示装置
JP2005255679A Division JP4229107B2 (ja) 1996-11-22 2005-09-02 アクティブマトリクス基板の製造方法，アクティブマトリクス基板および液晶表示装置

Publications (3)

Publication Number Publication Date
JPH10206896A JPH10206896A (ja) 1998-08-07
JPH10206896A5 JPH10206896A5 (2) 2004-12-09
JP3738799B2 true JP3738799B2 (ja) 2006-01-25

Family

ID=26572601

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33787597A Expired - Fee Related JP3738799B2 (ja) 1996-11-22 1997-11-21 アクティブマトリクス基板の製造方法，アクティブマトリクス基板および液晶表示装置

Country Status (1)

Country Link
JP (1) JP3738799B2 (2)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3682714B2 (ja) * 2000-06-16 2005-08-10 共同印刷株式会社 アクティブマトリックス層および転写方法
JP3862202B2 (ja) * 2000-06-16 2006-12-27 共同印刷株式会社 アクティブマトリックス層および転写方法
JP4019305B2 (ja) * 2001-07-13 2007-12-12 セイコーエプソン株式会社 薄膜装置の製造方法
US6814832B2 (en) 2001-07-24 2004-11-09 Seiko Epson Corporation Method for transferring element, method for producing element, integrated circuit, circuit board, electro-optical device, IC card, and electronic appliance
US6887650B2 (en) 2001-07-24 2005-05-03 Seiko Epson Corporation Transfer method, method of manufacturing thin film devices, method of manufacturing integrated circuits, circuit board and manufacturing method thereof, electro-optical apparatus and manufacturing method thereof, ic card, and electronic appliance
JP2004072049A (ja) * 2002-08-09 2004-03-04 Ricoh Co Ltd 有機ｔｆｔ素子及びその製造方法
JP4637477B2 (ja) * 2002-12-27 2011-02-23 株式会社半導体エネルギー研究所 剥離方法
KR101033797B1 (ko) 2003-01-15 2011-05-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법 및 그 박리 방법을 사용한 표시 장치의 제작 방법
JP2004349513A (ja) * 2003-05-22 2004-12-09 Seiko Epson Corp 薄膜回路装置及びその製造方法、並びに電気光学装置、電子機器
JP4310685B2 (ja) * 2003-09-03 2009-08-12 セイコーエプソン株式会社 転写装置
JP5153058B2 (ja) * 2005-02-25 2013-02-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4650066B2 (ja) * 2005-04-01 2011-03-16 セイコーエプソン株式会社 転写用基板、可撓性配線基板の製造方法および電子機器の製造方法
CN101385039B (zh) * 2006-03-15 2012-03-21 株式会社半导体能源研究所 半导体器件
US8168511B2 (en) * 2007-09-20 2012-05-01 Sharp Kabushiki Kaisha Display device manufacturing method and laminated structure
JP5309672B2 (ja) * 2008-04-21 2013-10-09 カシオ計算機株式会社 薄膜素子およびその製造方法
KR101938125B1 (ko) 2008-12-17 2019-01-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 전자 기기
US7994714B2 (en) * 2009-02-11 2011-08-09 Global Oled Technology Llc Display device with chiplets and light shields
JP5483151B2 (ja) * 2009-03-05 2014-05-07 カシオ計算機株式会社 薄膜素子およびその製造方法
US10586817B2 (en) * 2016-03-24 2020-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and separation apparatus
KR102340066B1 (ko) 2016-04-07 2021-12-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법 및 플렉시블 디바이스의 제작 방법
KR102388701B1 (ko) 2016-04-12 2022-04-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법 및 플렉시블 디바이스의 제작 방법
KR102378976B1 (ko) 2016-05-18 2022-03-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법, 표시 장치, 모듈, 및 전자 기기
US11637009B2 (en) 2016-10-07 2023-04-25 Semiconductor Energy Laboratory Co., Ltd. Cleaning method of glass substrate, manufacturing method of semiconductor device, and glass substrate
JP6931985B2 (ja) * 2016-10-21 2021-09-08 株式会社半導体エネルギー研究所 表示装置の作製方法
JP6910127B2 (ja) * 2016-10-21 2021-07-28 株式会社半導体エネルギー研究所 表示装置の作製方法
JP6792405B2 (ja) * 2016-10-21 2020-11-25 株式会社半導体エネルギー研究所 表示装置の作製方法
KR102490188B1 (ko) * 2016-11-09 2023-01-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치, 표시 모듈, 전자 기기, 및 표시 장치의 제작 방법

Also Published As

Publication number Publication date
JPH10206896A (ja) 1998-08-07

Similar Documents

Publication Publication Date Title
JP3738799B2 (ja) アクティブマトリクス基板の製造方法，アクティブマトリクス基板および液晶表示装置
USRE40601E1 (en) Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device
US6127199A (en) Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device
JP4619462B2 (ja) 薄膜素子の転写方法
JP3809733B2 (ja) 薄膜トランジスタの剥離方法
JP3809712B2 (ja) 薄膜デバイスの転写方法
JP3738798B2 (ja) アクティブマトリクス基板の製造方法及び液晶パネルの製造方法
JP4042182B2 (ja) Ｉｃカードの製造方法及び薄膜集積回路装置の製造方法
US6645830B2 (en) Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device and liquid crystal display device produced by the same
KR100494479B1 (ko) 액티브 매트릭스 기판의 제조 방법
JP4478268B2 (ja) 薄膜デバイスの製造方法
JP3809710B2 (ja) 薄膜素子の転写方法
JP3837807B2 (ja) 転写された薄膜構造ブロック間の電気的導通をとる方法，アクティブマトリクス基板の製造方法，アクティブマトリクス基板および液晶装置
JP3849683B2 (ja) 薄膜トランジスタの剥離方法
JP4619644B2 (ja) 薄膜素子の転写方法
JP2009076852A (ja) 薄膜素子、薄膜素子の製造方法、及び表示装置
JP4229107B2 (ja) アクティブマトリクス基板の製造方法，アクティブマトリクス基板および液晶表示装置
JP4525603B2 (ja) 薄膜トランジスタの転写方法
JP4619645B2 (ja) 薄膜素子の転写方法
JP3738850B2 (ja) アクティブマトリクス基板および液晶表示装置
JP3809833B2 (ja) 薄膜素子の転写方法

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20050527

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20050705

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050902

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20051012

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20051025

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091111

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091111

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101111

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101111

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111111

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111111

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121111

Year of fee payment: 7

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121111

Year of fee payment: 7

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121111

Year of fee payment: 7

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

S631 Written request for registration of reclamation of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313631

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

S631 Written request for registration of reclamation of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313631

S633 Written request for registration of reclamation of name

Free format text: JAPANESE INTERMEDIATE CODE: R313633

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121111

Year of fee payment: 7

R371 Transfer withdrawn

Free format text: JAPANESE INTERMEDIATE CODE: R371

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R371 Transfer withdrawn

Free format text: JAPANESE INTERMEDIATE CODE: R371

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131111

Year of fee payment: 8

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees