JP4445281B2 - X線検出器パネル組立体を製造する方法及びデジタルx線パネル - Google Patents
X線検出器パネル組立体を製造する方法及びデジタルx線パネル Download PDFInfo
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- JP4445281B2 JP4445281B2 JP2004033028A JP2004033028A JP4445281B2 JP 4445281 B2 JP4445281 B2 JP 4445281B2 JP 2004033028 A JP2004033028 A JP 2004033028A JP 2004033028 A JP2004033028 A JP 2004033028A JP 4445281 B2 JP4445281 B2 JP 4445281B2
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20188—Auxiliary details, e.g. casings or cooling
- G01T1/20189—Damping or insulation against damage, e.g. caused by heat or pressure
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
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- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Measurement Of Radiation (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
Description
ジタルデータの作成において次第に普及している。幾つかの既知のデジタルX線イメージングシステムにおいて、線源からの放射線は、医学的診断用途で患者などの被検体に向かって配向される。放射線の一部は患者を透過して検出器に衝突し、そこで検出器が放射線を光フォトンに変換して該光フォトンが感知される。検出器は離散的画素、すなわちピクセルのマトリクスに分割され、各ピクセル領域に衝突する放射線の質又は強度に基いて出力信号をコード化する。放射線強度は放射線が患者を透過すると変化するので、出力信号に基づいて再構築された画像は、従来のX線用感光性フィルム技術により利用可能な画像像と同様の患者の組織投影を提供する。
12 検出器ベース面
16 側壁
18 裏面
20 有効検出器領域
22 ダム領域
24 接触フィンガー領域
28 接触フィンガー
100 密閉シール構造
102 接着領域
104 検出器マトリクス
106 ダム
108 厚さ
109 第2の面
110 シンチレータ材料
111 針構造
112 封入コーティング
114 反射層
116 薄膜マスク
118 密閉層
120 腐食保護層
Claims (10)
- 検出器基板12を備え、該基板が検出器ベース面14と、該検出器ベース面から垂直に延びる複数の側壁16とを含むX線検出器パネル組立体10を製造する方法であって、
前記検出器基板上に検出器マトリクス526を形成する段階と、
前記検出器マトリクスを取り囲むダム530を前記検出器基板上に形成する段階と、
前記検出器マトリクス上にシンチレータ材料534を形成する段階と、
少なくとも1つが前記ダムの表面に延び且つ該ダムを過ぎて延びる密閉カバーを前記シンチレータ材料上に形成する段階と、
段階を含み、
前記密閉カバーを形成する段階が、
前記シンチレータ材料上に前記ダム表面に延びる第1の封入層542を形成する段階と、
前記第1の封入層上に前記検出器マトリクスと前記ダム表面の間の領域まで延びる反射層546を形成する段階と、
前記反射層546及び前記第1の封入層542上に、前記反射層546の端部を過ぎて前記ダムの表面上の第1の封入層の端部まで延びる第2の封入層548を形成する段階と、
前記第2の封入層548上に前記ダムの表面上の前記第2の封入層548の端部まで延びる第1の水分障壁層550を形成する段階と、
前記第1の水分障壁層550上に前記ダムの表面上の前記第1の水分障壁層550を過ぎて延びる第2の水分障壁層552を形成する段階と、
含む方法。 - 前記反射層546が、銀又は金の第1の層、二酸化チタンの第2の層、及びアルミニウムの第3の層を含む請求項1に記載の方法。
- 前記第1の水分障壁層550が、二酸化チタンの第1の層とアルミニウムの第2の層とを含む請求項1に記載の方法。
- 前記第2の水分障壁層552が、二酸化チタン層を含む請求項1に記載の方法。
- 前記シンチレータ材料534を形成する段階が、針構造のヨウ化セシウム(CsI)の層を形成する段階を含む請求項1に記載の方法。
- 検出器基板12と、
前記検出器基板上に形成された検出器マトリクス526と、
前記検出器基板上に形成され、前記検出器マトリクスを取り囲むダム530と、
前記検出器マトリクス上に形成されたシンチレータ材料534と、
前記シンチレータ材料上に形成された密閉カバーと、
を備え、
前記密閉カバーが、
前記シンチレータ材料上に前記ダム表面に延びる第1の封入層542と、
前記第1の封入層上に前記検出器マトリクスと前記ダム表面の間の領域まで延びる反射層546と、
前記反射層546及び前記第1の封入層542上に、前記反射層546の端部を過ぎて前記ダムの表面上の第1の封入層の端部まで延びる第2の封入層548と、
前記第2の封入層548上に前記ダムの表面上の前記第2の封入層548の端部まで延びる第1の水分障壁層550と、
前記第1の水分障壁層550上に前記ダムの表面上の前記第1の水分障壁層550を過ぎて延びる第2の水分障壁層552と、
含むことを特徴とするデジタルX線パネル10。 - 前記反射層546が、銀又は金の第1の層、二酸化チタンの第2の層、及びアルミニウムの第3の層を含む請求項6に記載のデジタルX線パネル10。
- 前記第1の水分障壁層550が、二酸化チタンの第1の層とアルミニウムの第2の層とを含む請求項6に記載のデジタルX線パネル10。
- 前記第2の水分障壁層552が、二酸化チタン層を含む請求項6に記載のデジタルX線パネル10。
- 前記シンチレータ材料534が、針構造のヨウ化セシウム(CsI)の層を含む請求項6に記載のデジタルX線パネル10。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/365,093 US7473903B2 (en) | 2003-02-12 | 2003-02-12 | Method and apparatus for deposited hermetic cover for digital X-ray panel |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004245833A JP2004245833A (ja) | 2004-09-02 |
| JP2004245833A5 JP2004245833A5 (ja) | 2007-03-22 |
| JP4445281B2 true JP4445281B2 (ja) | 2010-04-07 |
Family
ID=32736392
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004033028A Expired - Fee Related JP4445281B2 (ja) | 2003-02-12 | 2004-02-10 | X線検出器パネル組立体を製造する方法及びデジタルx線パネル |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7473903B2 (ja) |
| JP (1) | JP4445281B2 (ja) |
| DE (1) | DE102004005883A1 (ja) |
| FR (1) | FR2851051A1 (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20170138403A (ko) | 2015-04-20 | 2017-12-15 | 하마마츠 포토닉스 가부시키가이샤 | 방사선 검출기 및 그 제조 방법 |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7492019B2 (en) * | 2003-03-07 | 2009-02-17 | Ic Mechanics, Inc. | Micromachined assembly with a multi-layer cap defining a cavity |
| DE102005055176A1 (de) * | 2005-11-18 | 2007-05-31 | Siemens Ag | Flachbilddetektor |
| JP2007149842A (ja) * | 2005-11-25 | 2007-06-14 | Sanyo Electric Co Ltd | 半導体装置 |
| DE102006022138A1 (de) * | 2006-05-11 | 2007-11-15 | Siemens Ag | Szintillatorplatte |
| DE102006024893A1 (de) * | 2006-05-24 | 2007-12-06 | Siemens Ag | Szintillatorplatte |
| DE102006038969B4 (de) * | 2006-08-21 | 2013-02-28 | Siemens Aktiengesellschaft | Röntgenkonverterelement und Verfahren zu dessen Herstellung |
| JP5883556B2 (ja) * | 2010-06-04 | 2016-03-15 | 浜松ホトニクス株式会社 | 放射線イメージセンサ |
| JP2012168128A (ja) * | 2011-02-16 | 2012-09-06 | Canon Inc | 放射線検出装置及び放射線撮像システム |
| US8415628B1 (en) | 2011-10-31 | 2013-04-09 | General Electric Company | Hermetically sealed radiation detector and methods for making |
| US9702986B2 (en) * | 2013-05-24 | 2017-07-11 | Teledyne Dalsa B.V. | Moisture protection structure for a device and a fabrication method thereof |
| US10712454B2 (en) * | 2014-07-25 | 2020-07-14 | General Electric Company | X-ray detectors supported on a substrate having a metal barrier |
| EP3221720B1 (en) * | 2014-11-21 | 2019-11-06 | Teledyne Digital Imaging, Inc. | Mammography detector with small chest distance |
| US10299744B2 (en) | 2016-11-17 | 2019-05-28 | General Electric Company | Scintillator sealing for solid state x-ray detector |
| US10631801B2 (en) | 2016-11-17 | 2020-04-28 | General Electric Company | Scintillator sealing for solid state X-ray detector |
| US9871073B1 (en) | 2016-11-22 | 2018-01-16 | General Electric Company | Scintillator sealing for solid state X-ray detector |
| US9812510B1 (en) | 2016-12-14 | 2017-11-07 | General Electric Company | Packaging organic photodetectors |
| JP6877289B2 (ja) * | 2017-07-31 | 2021-05-26 | キヤノン株式会社 | 放射線検出装置、放射線検出システム、及び放射線出装置の製造方法 |
| KR102666048B1 (ko) * | 2019-05-29 | 2024-05-13 | 엘지디스플레이 주식회사 | 디지털 엑스레이 검출기와 이를 포함하는 디지털 엑스레이 검출 장치 및 이의 제조 방법 |
| CN114639689B (zh) * | 2020-12-15 | 2025-03-18 | 京东方科技集团股份有限公司 | 平板探测器、其制作方法及x射线成像系统 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5187369A (en) * | 1990-10-01 | 1993-02-16 | General Electric Company | High sensitivity, high resolution, solid state x-ray imaging device with barrier layer |
| US5179284A (en) * | 1991-08-21 | 1993-01-12 | General Electric Company | Solid state radiation imager having a reflective and protective coating |
| US5231655A (en) * | 1991-12-06 | 1993-07-27 | General Electric Company | X-ray collimator |
| US5231654A (en) * | 1991-12-06 | 1993-07-27 | General Electric Company | Radiation imager collimator |
| US5463225A (en) * | 1992-06-01 | 1995-10-31 | General Electric Company | Solid state radiation imager with high integrity barrier layer and method of fabricating |
| US5399884A (en) * | 1993-11-10 | 1995-03-21 | General Electric Company | Radiation imager with single passivation dielectric for transistor and diode |
| US5435608A (en) * | 1994-06-17 | 1995-07-25 | General Electric Company | Radiation imager with common passivation dielectric for gate electrode and photosensor |
| US5430298A (en) * | 1994-06-21 | 1995-07-04 | General Electric Company | CT array with improved photosensor linearity and reduced crosstalk |
| US5517031A (en) * | 1994-06-21 | 1996-05-14 | General Electric Company | Solid state imager with opaque layer |
| US6037609A (en) * | 1997-01-17 | 2000-03-14 | General Electric Company | Corrosion resistant imager |
| US6167110A (en) * | 1997-11-03 | 2000-12-26 | General Electric Company | High voltage x-ray and conventional radiography imaging apparatus and method |
| IL139672A (en) * | 1998-05-15 | 2005-11-20 | Univ Leland Stanford Junior | Glucocorticoid receptor antagonists for the tretment of dementia |
| US6172371B1 (en) * | 1998-06-15 | 2001-01-09 | General Electric Company | Robust cover plate for radiation imager |
| US6414315B1 (en) * | 1999-10-04 | 2002-07-02 | General Electric Company | Radiation imaging with continuous polymer layer for scintillator |
| US6396046B1 (en) | 1999-11-02 | 2002-05-28 | General Electric Company | Imager with reduced FET photoresponse and high integrity contact via |
| US6350990B1 (en) * | 1999-11-04 | 2002-02-26 | General Electric Company | End cap and sealing method for imager |
| US6353654B1 (en) * | 1999-12-30 | 2002-03-05 | General Electric Company | Method and apparatus for compensating for image retention in an amorphous silicon imaging detector |
| JP4234304B2 (ja) * | 2000-05-19 | 2009-03-04 | 浜松ホトニクス株式会社 | 放射線検出器 |
| US6642524B2 (en) * | 2002-01-09 | 2003-11-04 | Ge Medical Systems Global Technology Company, Llc | Scintillator sealing for solid state X-ray detector |
-
2003
- 2003-02-12 US US10/365,093 patent/US7473903B2/en not_active Expired - Fee Related
-
2004
- 2004-02-05 DE DE102004005883A patent/DE102004005883A1/de not_active Withdrawn
- 2004-02-10 JP JP2004033028A patent/JP4445281B2/ja not_active Expired - Fee Related
- 2004-02-11 FR FR0401326A patent/FR2851051A1/fr not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20170138403A (ko) | 2015-04-20 | 2017-12-15 | 하마마츠 포토닉스 가부시키가이샤 | 방사선 검출기 및 그 제조 방법 |
| US10379229B2 (en) | 2015-04-20 | 2019-08-13 | Hamamatsu Photonics K.K. | Radiation detector and method for producing same |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102004005883A1 (de) | 2004-08-26 |
| US20040155320A1 (en) | 2004-08-12 |
| US7473903B2 (en) | 2009-01-06 |
| FR2851051A1 (fr) | 2004-08-13 |
| JP2004245833A (ja) | 2004-09-02 |
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