JP4461507B2 - 成膜装置 - Google Patents
成膜装置 Download PDFInfo
- Publication number
- JP4461507B2 JP4461507B2 JP15687199A JP15687199A JP4461507B2 JP 4461507 B2 JP4461507 B2 JP 4461507B2 JP 15687199 A JP15687199 A JP 15687199A JP 15687199 A JP15687199 A JP 15687199A JP 4461507 B2 JP4461507 B2 JP 4461507B2
- Authority
- JP
- Japan
- Prior art keywords
- film forming
- mounting table
- processing container
- forming apparatus
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15687199A JP4461507B2 (ja) | 1999-06-03 | 1999-06-03 | 成膜装置 |
| PCT/JP2000/003358 WO2000075971A1 (fr) | 1999-06-03 | 2000-05-25 | Appareil de formation de film |
| TW89110803A TW484175B (en) | 1999-06-03 | 2000-06-02 | Film forming apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15687199A JP4461507B2 (ja) | 1999-06-03 | 1999-06-03 | 成膜装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000345343A JP2000345343A (ja) | 2000-12-12 |
| JP2000345343A5 JP2000345343A5 (2) | 2006-07-27 |
| JP4461507B2 true JP4461507B2 (ja) | 2010-05-12 |
Family
ID=15637222
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15687199A Expired - Fee Related JP4461507B2 (ja) | 1999-06-03 | 1999-06-03 | 成膜装置 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP4461507B2 (2) |
| TW (1) | TW484175B (2) |
| WO (1) | WO2000075971A1 (2) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4639477B2 (ja) * | 2001-01-24 | 2011-02-23 | 富士電機デバイステクノロジー株式会社 | 磁気記録媒体の製造方法 |
| JP4597894B2 (ja) * | 2006-03-31 | 2010-12-15 | 東京エレクトロン株式会社 | 基板載置台および基板処理装置 |
| JP5347487B2 (ja) * | 2008-12-24 | 2013-11-20 | 富士電機株式会社 | シャワー電極板及びプラズマcvd装置 |
| JP2013166990A (ja) * | 2012-02-15 | 2013-08-29 | Fujifilm Corp | 機能性フィルムおよび機能性フィルムの製造方法 |
| JP7164332B2 (ja) * | 2018-06-20 | 2022-11-01 | 株式会社ニューフレアテクノロジー | 気相成長装置 |
| JP7172717B2 (ja) * | 2019-02-25 | 2022-11-16 | 三菱マテリアル株式会社 | プラズマ処理装置用電極板 |
| JP6733802B1 (ja) * | 2019-05-28 | 2020-08-05 | 信越半導体株式会社 | エピタキシャルウェーハの製造方法及びサセプタ |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01179309A (ja) * | 1987-12-30 | 1989-07-17 | Tokyo Electron Ltd | 加熱法 |
| JPH03177561A (ja) * | 1989-09-19 | 1991-08-01 | Nippon Mining Co Ltd | 薄膜形成装置 |
| JPH04232256A (ja) * | 1990-12-28 | 1992-08-20 | Nikko Kyodo Co Ltd | 薄膜形成装置 |
| JP3052116B2 (ja) * | 1994-10-26 | 2000-06-12 | 東京エレクトロン株式会社 | 熱処理装置 |
| JP3788836B2 (ja) * | 1996-12-24 | 2006-06-21 | 東芝セラミックス株式会社 | 気相成長用サセプタ及びその製造方法 |
| JP4037956B2 (ja) * | 1998-04-28 | 2008-01-23 | 東海カーボン株式会社 | チャンバー内壁保護部材 |
-
1999
- 1999-06-03 JP JP15687199A patent/JP4461507B2/ja not_active Expired - Fee Related
-
2000
- 2000-05-25 WO PCT/JP2000/003358 patent/WO2000075971A1/ja not_active Ceased
- 2000-06-02 TW TW89110803A patent/TW484175B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| WO2000075971A1 (fr) | 2000-12-14 |
| TW484175B (en) | 2002-04-21 |
| JP2000345343A (ja) | 2000-12-12 |
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