JP4889933B2 - 半導体素子の作製方法 - Google Patents

半導体素子の作製方法 Download PDF

Info

Publication number: JP4889933B2
Authority: JP; Japan
Prior art keywords: film; organic film; forming; organic; contact hole
Prior art date: 2003-10-02
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

JP2004285912A

Other languages

English (en)

Japanese (ja)

Other versions

JP2005129919A (ja

JP2005129919A5 (2

Inventor

厳藤井

慎志前川

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Semiconductor Energy Laboratory Co Ltd

Original Assignee

Semiconductor Energy Laboratory Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2003-10-02

Filing date

2004-09-30

Publication date

2012-03-07

2004-09-30 Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd

2004-09-30 Priority to JP2004285912A priority Critical patent/JP4889933B2/ja

2005-05-19 Publication of JP2005129919A publication Critical patent/JP2005129919A/ja

2007-11-08 Publication of JP2005129919A5 publication Critical patent/JP2005129919A5/ja

2012-03-07 Application granted granted Critical

2012-03-07 Publication of JP4889933B2 publication Critical patent/JP4889933B2/ja

2024-09-30 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

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Liquid Crystal (AREA)
Electrodes Of Semiconductors (AREA)
Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Thin Film Transistor (AREA)
Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

JP2004285912A 2003-10-02 2004-09-30 半導体素子の作製方法 Expired - Fee Related JP4889933B2 (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP2004285912A JP4889933B2 (ja)	2003-10-02	2004-09-30	半導体素子の作製方法

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP2003344880		2003-10-02
JP2003344880		2003-10-02
JP2004285912A JP4889933B2 (ja)	2003-10-02	2004-09-30	半導体素子の作製方法

Publications (3)

Publication Number	Publication Date
JP2005129919A JP2005129919A (ja)	2005-05-19
JP2005129919A5 JP2005129919A5 (2)	2007-11-08
JP4889933B2 true JP4889933B2 (ja)	2012-03-07

Family

ID=34655835

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2004285912A Expired - Fee Related JP4889933B2 (ja)	2003-10-02	2004-09-30	半導体素子の作製方法

Country Status (1)

Country	Link
JP (1)	JP4889933B2 (2)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP4566575B2 (ja) *	2004-02-13	2010-10-20	株式会社半導体エネルギー研究所	発光装置の作製方法
JP2007227715A (ja) *	2006-02-24	2007-09-06	Stanley Electric Co Ltd	パターニング基板の製造方法
JP2007324510A (ja) *	2006-06-05	2007-12-13	Sony Corp	半導体装置の製造方法
JP5090789B2 (ja) *	2007-05-30	2012-12-05	東京応化工業株式会社	貼り合わせ装置、接着剤の溶解を防ぐ方法、及び貼り合わせ方法
JP5059499B2 (ja) *	2007-06-29	2012-10-24	協立化学産業株式会社	基板にポジパターンを形成する方法及びその方法で使用されるネガパターン形成用組成物
KR101412761B1 (ko)	2008-01-18	2014-07-02	삼성디스플레이 주식회사	박막 트랜지스터 기판 및 이의 제조 방법
JP5537400B2 (ja) *	2010-12-22	2014-07-02	株式会社東芝	パターン形成方法及び装置
WO2017158843A1 (ja) *	2016-03-18	2017-09-21	堺ディスプレイプロダクト株式会社	表示パネル及び表示パネルの製造方法
CN111146147B (zh) *	2019-12-30	2023-04-28	中芯集成电路（宁波）有限公司	一种半导体器件集成结构及方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH07122638A (ja) *	1993-10-26	1995-05-12	Fujitsu Ltd	半導体装置の製造方法
US5989945A (en) *	1996-05-15	1999-11-23	Seiko Epson Corporation	Thin film device provided with coating film, liquid crystal panel and electronic device, and method for making the thin film device
JPH10112499A (ja) *	1996-08-12	1998-04-28	Sony Corp	金属プラグおよび／または金属配線の形成方法
TW360949B (en) *	1997-12-19	1999-06-11	United Microelectronics Corp	Dual damascene process
JP3980312B2 (ja) *	2001-09-26	2007-09-26	株式会社日立製作所	液晶表示装置およびその製造方法

2004
- 2004-09-30 JP JP2004285912A patent/JP4889933B2/ja not_active Expired - Fee Related

Also Published As

Publication number	Publication date
JP2005129919A (ja)	2005-05-19

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