JP5162070B2 - 静電放電（ｅｓｄ）保護回路 - Google Patents

静電放電（ｅｓｄ）保護回路 Download PDF

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Publication number
JP5162070B2
JP5162070B2 JP2001574904A JP2001574904A JP5162070B2 JP 5162070 B2 JP5162070 B2 JP 5162070B2 JP 2001574904 A JP2001574904 A JP 2001574904A JP 2001574904 A JP2001574904 A JP 2001574904A JP 5162070 B2 JP5162070 B2 JP 5162070B2
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esd
bus
circuit
trigger
circuits
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JP2003530698A (ja
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藤男 武田
ダブリュ． ミラー、ジェームズ
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NXP USA Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements

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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
JP2001574904A 2000-04-10 2001-04-04 静電放電（ｅｓｄ）保護回路 Expired - Lifetime JP5162070B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/546,601 2000-04-10
US09/546,601 US6385021B1 (en) 2000-04-10 2000-04-10 Electrostatic discharge (ESD) protection circuit
PCT/US2001/010976 WO2001078148A1 (en) 2000-04-10 2001-04-04 Electrostatic discharge (esd) protection circuit

Publications (2)

Publication Number Publication Date
JP2003530698A JP2003530698A (ja) 2003-10-14
JP5162070B2 true JP5162070B2 (ja) 2013-03-13

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JP2001574904A Expired - Lifetime JP5162070B2 (ja) 2000-04-10 2001-04-04 静電放電（ｅｓｄ）保護回路

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US (1) US6385021B1 (de)
EP (1) EP1277236B1 (de)
JP (1) JP5162070B2 (de)
KR (1) KR100801863B1 (de)
CN (1) CN1242478C (de)
AU (1) AU2001251308A1 (de)
WO (1) WO2001078148A1 (de)

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Also Published As

Publication number Publication date
KR20020087966A (ko) 2002-11-23
EP1277236B1 (de) 2012-01-18
JP2003530698A (ja) 2003-10-14
WO2001078148A1 (en) 2001-10-18
AU2001251308A1 (en) 2001-10-23
EP1277236A1 (de) 2003-01-22
US6385021B1 (en) 2002-05-07
CN1426601A (zh) 2003-06-25
KR100801863B1 (ko) 2008-02-12
CN1242478C (zh) 2006-02-15

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