JP5693573B2 - 最適なエンドポイント・アルゴリズムを構築する方法 - Google Patents

最適なエンドポイント・アルゴリズムを構築する方法 Download PDF

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JP5693573B2
JP5693573B2 JP2012518588A JP2012518588A JP5693573B2 JP 5693573 B2 JP5693573 B2 JP 5693573B2 JP 2012518588 A JP2012518588 A JP 2012518588A JP 2012518588 A JP2012518588 A JP 2012518588A JP 5693573 B2 JP5693573 B2 JP 5693573B2
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endpoint
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signal
candidate
algorithm
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JP2012532463A (ja
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ワン・チャンシン
ペリー・アンドリュー・ジェームス
ベヌゴパル・ビジャヤクマー・シー．
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/246—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/095—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by irradiating with electromagnetic or particle radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/096—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by contacting with gases, liquids or plasmas

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Testing And Monitoring For Control Systems (AREA)
  • General Factory Administration (AREA)
  • Chemical Vapour Deposition (AREA)
  • Management, Administration, Business Operations System, And Electronic Commerce (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Indication And Recording Devices For Special Purposes And Tariff Metering Devices (AREA)
  • Complex Calculations (AREA)
  • Combined Controls Of Internal Combustion Engines (AREA)
  • Arrangements For Transmission Of Measured Signals (AREA)
  • Plasma Technology (AREA)
  • Information Retrieval, Db Structures And Fs Structures Therefor (AREA)
JP2012518588A 2009-06-30 2010-06-29 最適なエンドポイント・アルゴリズムを構築する方法 Active JP5693573B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US22210209P 2009-06-30 2009-06-30
US22202409P 2009-06-30 2009-06-30
US61/222,102 2009-06-30
US61/222,024 2009-06-30
US12/555,674 US8983631B2 (en) 2009-06-30 2009-09-08 Arrangement for identifying uncontrolled events at the process module level and methods thereof
US12/555,674 2009-09-08
PCT/US2010/040477 WO2011002810A2 (fr) 2009-06-30 2010-06-29 Procédé de construction d'un algorithme de points finaux optimaux

Publications (2)

Publication Number Publication Date
JP2012532463A JP2012532463A (ja) 2012-12-13
JP5693573B2 true JP5693573B2 (ja) 2015-04-01

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JP2012518586A Active JP5629770B2 (ja) 2009-06-30 2010-06-29 プラズマチャンバ検証用のエッチング速度均一性を予測する方法、装置、及び、プログラム記憶媒体
JP2012518588A Active JP5693573B2 (ja) 2009-06-30 2010-06-29 最適なエンドポイント・アルゴリズムを構築する方法
JP2012518589A Pending JP2012532464A (ja) 2009-06-30 2010-06-29 制御できない事象をプロセスモジュールレベルで特定するための構成とその方法
JP2012518584A Active JP5599882B2 (ja) 2009-06-30 2010-06-29 処理チャンバの予測予防保全のための方法と装置
JP2012518582A Active JP5624618B2 (ja) 2009-06-30 2010-06-29 プラズマ処理ツールのためのイン・サイチュプロセス監視および制御のための方法と構成

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JP2012518586A Active JP5629770B2 (ja) 2009-06-30 2010-06-29 プラズマチャンバ検証用のエッチング速度均一性を予測する方法、装置、及び、プログラム記憶媒体

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JP2012518589A Pending JP2012532464A (ja) 2009-06-30 2010-06-29 制御できない事象をプロセスモジュールレベルで特定するための構成とその方法
JP2012518584A Active JP5599882B2 (ja) 2009-06-30 2010-06-29 処理チャンバの予測予防保全のための方法と装置
JP2012518582A Active JP5624618B2 (ja) 2009-06-30 2010-06-29 プラズマ処理ツールのためのイン・サイチュプロセス監視および制御のための方法と構成

Country Status (6)

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JP (5) JP5629770B2 (fr)
KR (5) KR101741274B1 (fr)
CN (5) CN102473590B (fr)
SG (5) SG176564A1 (fr)
TW (5) TWI484435B (fr)
WO (5) WO2011002811A2 (fr)

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WO2011002800A3 (fr) 2011-04-07
KR101708077B1 (ko) 2017-02-17
CN102474968B (zh) 2015-09-02
WO2011002803A3 (fr) 2011-03-03
TW201112302A (en) 2011-04-01
WO2011002804A2 (fr) 2011-01-06
JP2012532462A (ja) 2012-12-13
KR20120037420A (ko) 2012-04-19
JP5624618B2 (ja) 2014-11-12
WO2011002811A2 (fr) 2011-01-06
WO2011002811A3 (fr) 2011-02-24
KR20120101293A (ko) 2012-09-13
CN102804353A (zh) 2012-11-28
JP2012532463A (ja) 2012-12-13
JP2012532464A (ja) 2012-12-13
TWI495970B (zh) 2015-08-11
KR101741271B1 (ko) 2017-05-29
WO2011002810A2 (fr) 2011-01-06
WO2011002810A4 (fr) 2011-06-03
KR20120037421A (ko) 2012-04-19
SG176147A1 (en) 2011-12-29
CN102473631A (zh) 2012-05-23
KR20120037419A (ko) 2012-04-19
CN102473590B (zh) 2014-11-26
CN102804353B (zh) 2015-04-15
TWI509375B (zh) 2015-11-21
TW201129936A (en) 2011-09-01
TWI536193B (zh) 2016-06-01
CN102804929A (zh) 2012-11-28
JP5629770B2 (ja) 2014-11-26
KR101708078B1 (ko) 2017-02-17
TWI484435B (zh) 2015-05-11
CN102474968A (zh) 2012-05-23
JP5599882B2 (ja) 2014-10-01
TW201108022A (en) 2011-03-01
JP2012532460A (ja) 2012-12-13
WO2011002803A2 (fr) 2011-01-06
WO2011002800A2 (fr) 2011-01-06
CN102473590A (zh) 2012-05-23
JP2012532461A (ja) 2012-12-13
SG176565A1 (en) 2012-01-30
TWI480917B (zh) 2015-04-11
WO2011002810A3 (fr) 2011-04-14
KR20120047871A (ko) 2012-05-14
SG176564A1 (en) 2012-01-30
CN102804929B (zh) 2015-11-25
KR101741272B1 (ko) 2017-05-29
SG176566A1 (en) 2012-01-30
TW201129884A (en) 2011-09-01
SG176567A1 (en) 2012-01-30
CN102473631B (zh) 2014-11-26
KR101741274B1 (ko) 2017-05-29
WO2011002804A3 (fr) 2011-03-03
TW201115288A (en) 2011-05-01

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