JP5932054B2 - 黒鉛への銀の無電解めっき - Google Patents
黒鉛への銀の無電解めっき Download PDFInfo
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- JP5932054B2 JP5932054B2 JP2014547183A JP2014547183A JP5932054B2 JP 5932054 B2 JP5932054 B2 JP 5932054B2 JP 2014547183 A JP2014547183 A JP 2014547183A JP 2014547183 A JP2014547183 A JP 2014547183A JP 5932054 B2 JP5932054 B2 JP 5932054B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/0026—Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1635—Composition of the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1635—Composition of the substrate
- C23C18/1639—Substrates other than metallic, e.g. inorganic or organic or non-conductive
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1655—Process features
- C23C18/1658—Process features with two steps starting with metal deposition followed by addition of reducing agent
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
- C23C18/1875—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment only one step pretreatment
- C23C18/1882—Use of organic or inorganic compounds other than metals, e.g. activation, sensitisation with polymers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
- C23C18/1886—Multistep pretreatment
- C23C18/1889—Multistep pretreatment with use of metal first
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
- C23C18/44—Coating with noble metals using reducing agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
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- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Chemically Coating (AREA)
Description
黒鉛活性化組成物および銀めっき組成物を、1つの組成物として一緒に調製し、その後、還元性組成物を添加した。組成物は、室温で調製および混合した。
シード化合物としての硝酸銀を少量含有する黒鉛活性化組成物を、銀めっき組成物とは別に調製した。組成物は、室温で調製および混合した。
硝酸銀のシード溶液を、調製および撹拌された黒鉛活性化組成物に添加した。その次に、銀めっき組成物を添加した。組成物は、室温で調製および混合した。
この例では、銀被覆黒鉛物質を調製する従来の手段として、先行技術の多段階の無電解めっき法を説明する。この方法は、黒鉛活性化浴、黒鉛増感浴およびめっき浴の使用を含む。浴の交差汚染を最小限に抑えるために、浴から浴への移動には、溶液と粉末生成物との分離が必要である。
エポキシ配合物における導電性能
アクリレート配合物における導電性能
導電性の接着性配合物を、銀被覆黒鉛の添加量26vol%(フィラー添加量が総重量の約60wt%)のアクリレート配合物を使用して、例1から4の各銀被覆黒鉛生成物から調製した。
窒素含有シラン活性剤の使用の効果
異なる窒素含有シラン活性剤
構成成分の濃度のめっき品質への影響
Claims (15)
- (A)以下の組成物:
(1)黒鉛粉末と窒素含有シランとを含む黒鉛活性化組成物
(2)銀塩と銀錯化剤とを含む銀めっき組成物、および
(3)銀塩のための還元剤を含む還元性組成物
を水中で一緒に混合するステップと、
(B)得られた銀被覆黒鉛を単離するステップと
を含む、黒鉛への銀のワンポット無電解めっき方法。 - 黒鉛活性化組成物の窒素含有シランが、3−イソシアネートプロピルトリエトキシシラン、3−イソシアネートプロピルトリメトキシシラン、2−シアノエチルトリメトキシシラン、2−シアノエチルトリエトキシシラン、3−シアノプロピルトリメトキシシラン、3−シアノプロピルトリエトキシシラン、3−シアノプロピルメチルジメトキシシラン、3−アミノプロピルトリメトキシシラン、3−アミノプロピルトリエトキシシラン、3−アミノプロピルメチルジメトキシシラン、3−アミノプロピルメチルジエトキシシラン、4−アミノブチルトリエトキシシラン、N−(2−アミノエチル)−3−アミノプロピルトリメトキシシラン、N−(2−アミノエチル)−3−アミノプロピルトリエトキシシラン、N−(2−アミノエチル)−3−アミノプロピルメチルジメトキシシラン、アミノプロピルシラントリオール、N−(2−アミノエチル)−3−アミノプロピルシラントリオール、アミノフェニルトリメトキシシラン、3−チオシアネートプロピルトリエトキシシラン、3−(2−イミダゾリン−1−イル)プロピルトリエトキシシラン、および上述のものの任意の組み合わせからなる群から選択される、請求項1に記載の方法。
- 窒素含有シランが、黒鉛の重量の0.1〜10wt%の量で存在する、請求項1に記載の方法。
- 銀めっき組成物の銀塩が、硝酸銀、硫酸銀および塩化銀からなる群から選択され、銀めっき組成物の銀錯化剤が、水酸化アンモニウム、エチレンジアミン、メチルアミンおよびエチルアミンからなる群から選択される、請求項1に記載の方法。
- 銀塩が、めっき溶液の0.01〜50g/Lの量で存在する、請求項1に記載の方法。
- 銀塩のための還元剤が、アルデヒド、ポリオール、酒石酸塩、酒石酸エステル、酒石酸、単糖類、二糖類、多糖類、ヒドラジンおよびヒドラジン水和物からなる群から選択される、請求項1に記載の方法。
- 銀塩のための還元剤が、めっき溶液中の銀塩のモル数の1〜50倍の量で存在する、請求項1に記載の方法。
- 黒鉛活性化組成物が、黒鉛の総重量の0.1%〜10%の量の、銀めっき組成物中の銀塩をさらに含む、請求項1に記載の方法。
- 黒鉛活性化組成物および銀めっき組成物が混合される前に、全黒鉛の0.1〜10%である銀塩が黒鉛活性化組成物に添加される、請求項5に記載の方法。
- (A)0.1〜100g/Lの範囲で存在する前処理していない黒鉛と、
(B)0.01〜50g/Lの範囲で存在する銀塩と、
(C)0.01〜35g/Lの範囲で存在する銀錯化剤と、
(D)黒鉛の重量の0.01〜20wt%の範囲で存在する窒素含有シランと、
(E)銀塩のモル数の1〜50倍の範囲で存在する、銀塩のための還元剤と
を含む、黒鉛に銀をめっきするための水性の無電解めっき組成物。 - 銀塩が、硝酸銀、硫酸銀および塩化銀からなる群から選択される、請求項10に記載のめっき組成物。
- 銀錯化剤が、水酸化アンモニウム、エチレンジアミン、メチルアミンおよびエチルアミンからなる群から選択される、請求項10または11に記載のめっき組成物。
- 窒素含有シランが、黒鉛の重量の0.1〜10wt%の量で存在する、請求項10〜12のいずれか1項に記載のめっき組成物。
- 窒素含有シランが、3−イソシアネートプロピルトリエトキシシラン、3−イソシアネートプロピルトリメトキシシラン、2−シアノエチルトリメトキシシラン、2−シアノエチルトリエトキシシラン、3−シアノプロピルトリメトキシシラン、3−シアノプロピルトリエトキシシラン、3−シアノプロピルメチルジメトキシシラン、3−アミノプロピルトリメトキシシラン、3−アミノプロピルトリエトキシシラン、3−アミノプロピルメチルジメトキシシラン、3−アミノプロピルメチルジエトキシシラン、4−アミノブチルトリエトキシシラン、N−(2−アミノエチル)−3−アミノプロピルトリメトキシシラン、N−(2−アミノエチル)−3−アミノプロピルトリエトキシシラン、N−(2−アミノエチル)−3−アミノプロピルメチルジメトキシシラン、アミノプロピルシラントリオール、N−(2−アミノエチル)−3−アミノプロピルシラントリオール、アミノフェニルトリメトキシシラン、3−チオシアネートプロピルトリエトキシシラン、および3−(2−イミダゾリン−1−イル)プロピルトリエトキシシランからなる群から選択される、請求項10〜13のいずれか1項に記載のめっき組成物。
- 還元剤が、アルデヒド、ポリオール、酒石酸塩、酒石酸エステル、酒石酸、単糖類、二糖類、多糖類、ヒドラジン、およびヒドラジン水和物からなる群から選択される、請求項10〜14のいずれか1項に記載のめっき組成物。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161576077P | 2011-12-15 | 2011-12-15 | |
| US61/576,077 | 2011-12-15 | ||
| PCT/US2012/028251 WO2013089815A1 (en) | 2011-12-15 | 2012-03-08 | Electroless plating of silver onto graphite |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2015503032A JP2015503032A (ja) | 2015-01-29 |
| JP5932054B2 true JP5932054B2 (ja) | 2016-06-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014547183A Expired - Fee Related JP5932054B2 (ja) | 2011-12-15 | 2012-03-08 | 黒鉛への銀の無電解めっき |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US10361016B2 (ja) |
| EP (1) | EP2791388B1 (ja) |
| JP (1) | JP5932054B2 (ja) |
| KR (1) | KR101483920B1 (ja) |
| CN (1) | CN103998651B (ja) |
| TW (1) | TWI591206B (ja) |
| WO (1) | WO2013089815A1 (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3441653B2 (ja) | 1998-09-17 | 2003-09-02 | 株式会社三社電機製作所 | 半導体装置の製造方法 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5932054B2 (ja) * | 2011-12-15 | 2016-06-08 | ヘンケル アイピー アンド ホールディング ゲゼルシャフト ミット ベシュレンクテル ハフツング | 黒鉛への銀の無電解めっき |
| KR102208197B1 (ko) | 2019-05-27 | 2021-01-27 | 주식회사 엠엠에스 | 은-구리-흑연으로 이루어진 복합기능형 다층분말 제조방법 및 복합기능형 다층분말 |
| KR102231389B1 (ko) | 2019-06-12 | 2021-03-24 | 주식회사 엠엠에스코퍼레이션 | 저비중 전도성분말을 포함하는 전자파 차폐 및 방열용 도료조성물 제조방법 |
| KR102476608B1 (ko) * | 2021-11-19 | 2022-12-13 | (주)피이솔브 | 은도금액 |
| CN116313215B (zh) * | 2023-03-30 | 2024-11-19 | 东南大学 | 一种银包石墨的制法、银包石墨电子封装浆料及导电薄膜 |
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| WO2001049898A1 (en) * | 2000-01-07 | 2001-07-12 | Nikko Materials Co., Ltd. | Method for metal plating, pre-treating agent, and semiconductor wafer and semiconductor device using the same |
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| US7851055B2 (en) * | 2005-03-29 | 2010-12-14 | Hitachi Metals, Ltd. | High-thermal-conductivity graphite-particles-dispersed-composite and its production method |
| CN1919933A (zh) * | 2006-09-01 | 2007-02-28 | 清华大学 | 一种石墨粉表面化学镀银制备导电胶的方法 |
| JP2008133535A (ja) * | 2006-10-26 | 2008-06-12 | Ube Nitto Kasei Co Ltd | 金属ナノ粒子付着基材の製造方法、基材付着性金属ナノ粒子形成用組成物、金属層被覆基材の製造方法、無電解めっき前処理方法、無電解めっき前処理用組成物および無電解めっき品 |
| CN100495771C (zh) * | 2006-12-14 | 2009-06-03 | 复旦大学 | 一种超低温锂离子电池负极膜及其制备方法和应用 |
| CN101054483B (zh) * | 2007-05-23 | 2011-06-29 | 华侨大学 | 一种镀银石墨及其制备方法 |
| JP5932054B2 (ja) * | 2011-12-15 | 2016-06-08 | ヘンケル アイピー アンド ホールディング ゲゼルシャフト ミット ベシュレンクテル ハフツング | 黒鉛への銀の無電解めっき |
| CN105103239B (zh) * | 2013-01-23 | 2019-09-10 | 汉高知识产权控股有限责任公司 | 柔性导电油墨 |
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- 2012-03-08 CN CN201280061684.5A patent/CN103998651B/zh not_active Expired - Fee Related
- 2012-03-26 TW TW101110427A patent/TWI591206B/zh not_active IP Right Cessation
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- 2014-06-12 US US14/302,845 patent/US10361016B2/en active Active
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3441653B2 (ja) | 1998-09-17 | 2003-09-02 | 株式会社三社電機製作所 | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US10361016B2 (en) | 2019-07-23 |
| TWI591206B (zh) | 2017-07-11 |
| CN103998651B (zh) | 2016-11-23 |
| US10923249B2 (en) | 2021-02-16 |
| EP2791388B1 (en) | 2019-02-27 |
| WO2013089815A1 (en) | 2013-06-20 |
| JP2015503032A (ja) | 2015-01-29 |
| TW201323652A (zh) | 2013-06-16 |
| US20140295066A1 (en) | 2014-10-02 |
| US20190295747A1 (en) | 2019-09-26 |
| KR101483920B1 (ko) | 2015-01-16 |
| EP2791388A4 (en) | 2015-08-19 |
| EP2791388A1 (en) | 2014-10-22 |
| CN103998651A (zh) | 2014-08-20 |
| KR20140113681A (ko) | 2014-09-24 |
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