JP5981232B2 - 半導体パッケージ、半導体装置及び半導体パッケージの製造方法 - Google Patents

半導体パッケージ、半導体装置及び半導体パッケージの製造方法 Download PDF

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Publication number
JP5981232B2
JP5981232B2 JP2012129135A JP2012129135A JP5981232B2 JP 5981232 B2 JP5981232 B2 JP 5981232B2 JP 2012129135 A JP2012129135 A JP 2012129135A JP 2012129135 A JP2012129135 A JP 2012129135A JP 5981232 B2 JP5981232 B2 JP 5981232B2
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Prior art keywords
insulating layer
hole
core substrate
layer
semiconductor chip
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JP2012129135A
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Japanese (ja)
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JP2013254830A5 (2
JP2013254830A (ja
Inventor
清水　規良
規良 清水
六川　昭雄
昭雄 六川
立岩　昭彦
昭彦 立岩
田中　正人
正人 田中
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Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
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Priority to JP2012129135A priority Critical patent/JP5981232B2/ja
Priority to US13/910,325 priority patent/US9054082B2/en
Publication of JP2013254830A publication Critical patent/JP2013254830A/ja
Publication of JP2013254830A5 publication Critical patent/JP2013254830A5/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H10W70/614—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together the multiple chips being integrally enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63—Vias, e.g. via plugs
    • H10W70/635—Through-vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/695—Organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H10W74/117—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations the substrate having spherical bumps for external connection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/08—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs
    • H10W70/09—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9413—Dispositions of bond pads on encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/019—Manufacture or treatment using temporary auxiliary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

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JP2012129135A 2012-06-06 2012-06-06 半導体パッケージ、半導体装置及び半導体パッケージの製造方法 Active JP5981232B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012129135A JP5981232B2 (ja) 2012-06-06 2012-06-06 半導体パッケージ、半導体装置及び半導体パッケージの製造方法
US13/910,325 US9054082B2 (en) 2012-06-06 2013-06-05 Semiconductor package, semiconductor device, and method for manufacturing semiconductor package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012129135A JP5981232B2 (ja) 2012-06-06 2012-06-06 半導体パッケージ、半導体装置及び半導体パッケージの製造方法

Publications (3)

Publication Number Publication Date
JP2013254830A JP2013254830A (ja) 2013-12-19
JP2013254830A5 JP2013254830A5 (2) 2015-06-25
JP5981232B2 true JP5981232B2 (ja) 2016-08-31

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Country Status (2)

Country Link
US (1) US9054082B2 (2)
JP (1) JP5981232B2 (2)

Cited By (14)

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US10886232B2 (en) 2019-05-10 2021-01-05 Applied Materials, Inc. Package structure and fabrication methods
US10937726B1 (en) 2019-11-27 2021-03-02 Applied Materials, Inc. Package structure with embedded core
US11063169B2 (en) 2019-05-10 2021-07-13 Applied Materials, Inc. Substrate structuring methods
US11232951B1 (en) 2020-07-14 2022-01-25 Applied Materials, Inc. Method and apparatus for laser drilling blind vias
US11257790B2 (en) 2020-03-10 2022-02-22 Applied Materials, Inc. High connectivity device stacking
US11342256B2 (en) 2019-01-24 2022-05-24 Applied Materials, Inc. Method of fine redistribution interconnect formation for advanced packaging applications
US11404318B2 (en) 2020-11-20 2022-08-02 Applied Materials, Inc. Methods of forming through-silicon vias in substrates for advanced packaging
US11400545B2 (en) 2020-05-11 2022-08-02 Applied Materials, Inc. Laser ablation for package fabrication
US11454884B2 (en) 2020-04-15 2022-09-27 Applied Materials, Inc. Fluoropolymer stamp fabrication method
US11521937B2 (en) 2020-11-16 2022-12-06 Applied Materials, Inc. Package structures with built-in EMI shielding
US11676832B2 (en) 2020-07-24 2023-06-13 Applied Materials, Inc. Laser ablation system for package fabrication
US11705365B2 (en) 2021-05-18 2023-07-18 Applied Materials, Inc. Methods of micro-via formation for advanced packaging
US11931855B2 (en) 2019-06-17 2024-03-19 Applied Materials, Inc. Planarization methods for packaging substrates
US12183684B2 (en) 2021-10-26 2024-12-31 Applied Materials, Inc. Semiconductor device packaging methods

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201826893A (zh) * 2017-01-11 2018-07-16 思鷺科技股份有限公司 封裝結構及封裝結構的製作方法
US10256180B2 (en) * 2014-06-24 2019-04-09 Ibis Innotech Inc. Package structure and manufacturing method of package structure
JP6608108B2 (ja) * 2015-12-25 2019-11-20 新光電気工業株式会社 配線基板、半導体装置及び配線基板の製造方法
US10297544B2 (en) * 2017-09-26 2019-05-21 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated fan-out package and method of fabricating the same
JP2020013835A (ja) 2018-07-13 2020-01-23 Tdk株式会社 センサー用パッケージ基板及びこれを備えるセンサーモジュール並びに電子部品内臓基板
JP7661664B2 (ja) * 2021-08-20 2025-04-15 新光電気工業株式会社 配線基板及びその製造方法
FR3138562A1 (fr) * 2022-08-01 2024-02-02 Stmicroelectronics (Grenoble 2) Sas Boîtier de circuit integre

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06268380A (ja) * 1993-03-16 1994-09-22 Ibiden Co Ltd プリント配線板
JP2002353631A (ja) * 2001-05-28 2002-12-06 Matsushita Electric Ind Co Ltd 回路基板とその製造方法
JP4792749B2 (ja) 2005-01-14 2011-10-12 大日本印刷株式会社 電子部品内蔵プリント配線板の製造方法
JP2007059821A (ja) * 2005-08-26 2007-03-08 Shinko Electric Ind Co Ltd 配線基板の製造方法
US20100133682A1 (en) * 2008-12-02 2010-06-03 Infineon Technologies Ag Semiconductor device
JP2011124077A (ja) * 2009-12-10 2011-06-23 Sekisui Chem Co Ltd 絶縁シート、積層構造体及び積層構造体の製造方法
JP5460388B2 (ja) 2010-03-10 2014-04-02 新光電気工業株式会社 半導体装置及びその製造方法
JP2012216601A (ja) * 2011-03-31 2012-11-08 Fujitsu Ltd 電子装置の製造方法及び電子装置
US9406552B2 (en) * 2012-12-20 2016-08-02 Advanced Semiconductor Engineering, Inc. Semiconductor device having conductive via and manufacturing process

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US11342256B2 (en) 2019-01-24 2022-05-24 Applied Materials, Inc. Method of fine redistribution interconnect formation for advanced packaging applications
US11521935B2 (en) 2019-05-10 2022-12-06 Applied Materials, Inc. Package structure and fabrication methods
US11476202B2 (en) 2019-05-10 2022-10-18 Applied Materials, Inc. Reconstituted substrate structure and fabrication methods for heterogeneous packaging integration
US11715700B2 (en) 2019-05-10 2023-08-01 Applied Materials, Inc. Reconstituted substrate structure and fabrication methods for heterogeneous packaging integration
US10886232B2 (en) 2019-05-10 2021-01-05 Applied Materials, Inc. Package structure and fabrication methods
US11264331B2 (en) 2019-05-10 2022-03-01 Applied Materials, Inc. Package structure and fabrication methods
US11264333B2 (en) 2019-05-10 2022-03-01 Applied Materials, Inc. Reconstituted substrate structure and fabrication methods for heterogeneous packaging integration
US12354968B2 (en) 2019-05-10 2025-07-08 Applied Materials, Inc. Reconstituted substrate structure and fabrication methods for heterogeneous packaging integration
US11362235B2 (en) 2019-05-10 2022-06-14 Applied Materials, Inc. Substrate structuring methods
US11398433B2 (en) 2019-05-10 2022-07-26 Applied Materials, Inc. Reconstituted substrate structure and fabrication methods for heterogeneous packaging integration
US12051653B2 (en) 2019-05-10 2024-07-30 Applied Materials, Inc. Reconstituted substrate for radio frequency applications
US11063169B2 (en) 2019-05-10 2021-07-13 Applied Materials, Inc. Substrate structuring methods
US11417605B2 (en) 2019-05-10 2022-08-16 Applied Materials, Inc. Reconstituted substrate for radio frequency applications
US11887934B2 (en) 2019-05-10 2024-01-30 Applied Materials, Inc. Package structure and fabrication methods
US11931855B2 (en) 2019-06-17 2024-03-19 Applied Materials, Inc. Planarization methods for packaging substrates
US12374611B2 (en) 2019-11-27 2025-07-29 Applied Materials, Inc. Package core assembly and fabrication methods
US12087679B2 (en) 2019-11-27 2024-09-10 Applied Materials, Inc. Package core assembly and fabrication methods
US10937726B1 (en) 2019-11-27 2021-03-02 Applied Materials, Inc. Package structure with embedded core
US11862546B2 (en) 2019-11-27 2024-01-02 Applied Materials, Inc. Package core assembly and fabrication methods
US11881447B2 (en) 2019-11-27 2024-01-23 Applied Materials, Inc. Package core assembly and fabrication methods
US11257790B2 (en) 2020-03-10 2022-02-22 Applied Materials, Inc. High connectivity device stacking
US12388049B2 (en) 2020-03-10 2025-08-12 Applied Materials, Inc. High connectivity device stacking
US11742330B2 (en) 2020-03-10 2023-08-29 Applied Materials, Inc. High connectivity device stacking
US11927885B2 (en) 2020-04-15 2024-03-12 Applied Materials, Inc. Fluoropolymer stamp fabrication method
US11454884B2 (en) 2020-04-15 2022-09-27 Applied Materials, Inc. Fluoropolymer stamp fabrication method
US11400545B2 (en) 2020-05-11 2022-08-02 Applied Materials, Inc. Laser ablation for package fabrication
US12358073B2 (en) 2020-07-14 2025-07-15 Applied Materials, Inc. Method and apparatus for laser drilling blind vias
US11232951B1 (en) 2020-07-14 2022-01-25 Applied Materials, Inc. Method and apparatus for laser drilling blind vias
US11676832B2 (en) 2020-07-24 2023-06-13 Applied Materials, Inc. Laser ablation system for package fabrication
US12518986B2 (en) 2020-07-24 2026-01-06 Applied Materials, Inc. Laser ablation system for package fabrication
US11521937B2 (en) 2020-11-16 2022-12-06 Applied Materials, Inc. Package structures with built-in EMI shielding
US12374586B2 (en) 2020-11-20 2025-07-29 Applied Materials, Inc. Methods of TSV formation for advanced packaging
US11404318B2 (en) 2020-11-20 2022-08-02 Applied Materials, Inc. Methods of forming through-silicon vias in substrates for advanced packaging
US11705365B2 (en) 2021-05-18 2023-07-18 Applied Materials, Inc. Methods of micro-via formation for advanced packaging
US12183684B2 (en) 2021-10-26 2024-12-31 Applied Materials, Inc. Semiconductor device packaging methods

Also Published As

Publication number Publication date
US20130328211A1 (en) 2013-12-12
US9054082B2 (en) 2015-06-09
JP2013254830A (ja) 2013-12-19

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