JP6030145B2 - 研磨用スラリー及びこれを用いた基板の研磨方法 - Google Patents
研磨用スラリー及びこれを用いた基板の研磨方法 Download PDFInfo
- Publication number
- JP6030145B2 JP6030145B2 JP2014539865A JP2014539865A JP6030145B2 JP 6030145 B2 JP6030145 B2 JP 6030145B2 JP 2014539865 A JP2014539865 A JP 2014539865A JP 2014539865 A JP2014539865 A JP 2014539865A JP 6030145 B2 JP6030145 B2 JP 6030145B2
- Authority
- JP
- Japan
- Prior art keywords
- slurry
- polishing
- content
- tungsten
- titanium oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020120038419A KR101257336B1 (ko) | 2012-04-13 | 2012-04-13 | 연마용 슬러리 및 이를 이용한 기판 연마 방법 |
| KR10-2012-0038419 | 2012-04-13 | ||
| PCT/KR2012/007367 WO2013154236A1 (fr) | 2012-04-13 | 2012-09-14 | Bouillie de polissage et procédé de polissage l'utilisant |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2015502417A JP2015502417A (ja) | 2015-01-22 |
| JP6030145B2 true JP6030145B2 (ja) | 2016-11-24 |
Family
ID=48443660
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014539865A Active JP6030145B2 (ja) | 2012-04-13 | 2012-09-14 | 研磨用スラリー及びこれを用いた基板の研磨方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20140312266A1 (fr) |
| JP (1) | JP6030145B2 (fr) |
| KR (1) | KR101257336B1 (fr) |
| CN (1) | CN104066807B (fr) |
| TW (1) | TWI608061B (fr) |
| WO (1) | WO2013154236A1 (fr) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140199840A1 (en) * | 2013-01-11 | 2014-07-17 | Applied Materials, Inc. | Chemical mechanical polishing apparatus and methods |
| KR101682097B1 (ko) * | 2014-08-26 | 2016-12-02 | 주식회사 케이씨텍 | 연마 슬러리 조성물 |
| CN106661429B (zh) * | 2014-08-26 | 2019-07-05 | 凯斯科技股份有限公司 | 抛光浆料组合物 |
| WO2016032145A1 (fr) * | 2014-08-26 | 2016-03-03 | 주식회사 케이씨텍 | Composition de suspension de polissage |
| KR101834418B1 (ko) * | 2015-10-02 | 2018-03-05 | 유비머트리얼즈주식회사 | 슬러리 및 이를 이용한 기판 연마 방법 |
| CN107914211A (zh) * | 2016-10-11 | 2018-04-17 | 中芯国际集成电路制造(上海)有限公司 | 一种化学机械研磨方法 |
| US10647887B2 (en) * | 2018-01-08 | 2020-05-12 | Cabot Microelectronics Corporation | Tungsten buff polishing compositions with improved topography |
| JP2019183023A (ja) * | 2018-04-12 | 2019-10-24 | 株式会社イリス | 洗浄防汚剤及び洗浄防汚方法 |
| JP7368997B2 (ja) * | 2019-09-30 | 2023-10-25 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| KR102415203B1 (ko) * | 2020-08-24 | 2022-06-30 | 에스케이씨솔믹스 주식회사 | 연마패드 및 이를 이용한 반도체 소자의 제조방법 |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5340370A (en) * | 1993-11-03 | 1994-08-23 | Intel Corporation | Slurries for chemical mechanical polishing |
| US5993686A (en) * | 1996-06-06 | 1999-11-30 | Cabot Corporation | Fluoride additive containing chemical mechanical polishing slurry and method for use of same |
| JPH10121035A (ja) * | 1996-08-30 | 1998-05-12 | Showa Denko Kk | 磁気ディスク基板研磨用組成物 |
| US6152976A (en) * | 1996-08-30 | 2000-11-28 | Showa Denko Kabushiki Kaisha | Abrasive composition for disc substrate, and process for polishing disc substrate |
| US6068787A (en) * | 1996-11-26 | 2000-05-30 | Cabot Corporation | Composition and slurry useful for metal CMP |
| US6083419A (en) * | 1997-07-28 | 2000-07-04 | Cabot Corporation | Polishing composition including an inhibitor of tungsten etching |
| DE69942615D1 (de) * | 1998-10-23 | 2010-09-02 | Fujifilm Electronic Materials | Eine chemisch-mechanisch polierende aufschlämmung, eine beschleunigerlösung enthaltend |
| US6478837B1 (en) * | 1999-06-28 | 2002-11-12 | Showa Denko K.K. | Abrasive composition substrate for magnetic recording disks and process for producing substrates for magnetic recording disk |
| TW581803B (en) * | 1999-06-28 | 2004-04-01 | Showa Denko Kk | Composition for polishing substrate for magnetic disk and method for producing substrate for magnetic disk |
| US6280490B1 (en) * | 1999-09-27 | 2001-08-28 | Fujimi America Inc. | Polishing composition and method for producing a memory hard disk |
| WO2001048109A1 (fr) * | 1999-12-27 | 2001-07-05 | Taiho Industries, Co., Ltd. | Agent de traitement de surface dure, agent anti-salissures et procede de traitement de surface |
| JP2001269859A (ja) * | 2000-03-27 | 2001-10-02 | Jsr Corp | 化学機械研磨用水系分散体 |
| JP2002003825A (ja) * | 2000-06-21 | 2002-01-09 | Asahi Kasei Corp | 光活性を有する半導体基板金属膜研磨用組成物 |
| JP2002009023A (ja) * | 2000-06-21 | 2002-01-11 | Asahi Kasei Corp | 半導体基板金属膜研磨用組成物 |
| US6551935B1 (en) * | 2000-08-31 | 2003-04-22 | Micron Technology, Inc. | Slurry for use in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods |
| JP2002173669A (ja) * | 2000-12-05 | 2002-06-21 | Asahi Kasei Corp | 半導体基板上金属膜研磨用スラリー |
| JP4003116B2 (ja) * | 2001-11-28 | 2007-11-07 | 株式会社フジミインコーポレーテッド | 磁気ディスク用基板の研磨用組成物及びそれを用いた研磨方法 |
| US20030139047A1 (en) * | 2002-01-24 | 2003-07-24 | Thomas Terence M. | Metal polishing slurry having a static etch inhibitor and method of formulation |
| US7132058B2 (en) * | 2002-01-24 | 2006-11-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Tungsten polishing solution |
| KR20030063763A (ko) * | 2002-01-24 | 2003-07-31 | 한국과학기술연구원 | 텅스텐 씨엠피용 슬러리 |
| US7513920B2 (en) * | 2002-02-11 | 2009-04-07 | Dupont Air Products Nanomaterials Llc | Free radical-forming activator attached to solid and used to enhance CMP formulations |
| TWI288772B (en) * | 2003-01-24 | 2007-10-21 | Rohm & Haas Elect Mat | Tungsten polishing solution |
| KR100600598B1 (ko) * | 2003-10-02 | 2006-07-13 | 제일모직주식회사 | 텅스텐 배선 연마용 슬러리 조성물 |
| US7172493B2 (en) * | 2003-11-24 | 2007-02-06 | Nikon Corporation | Fine force actuator assembly for chemical mechanical polishing apparatuses |
| US20050194562A1 (en) * | 2004-02-23 | 2005-09-08 | Lavoie Raymond L.Jr. | Polishing compositions for controlling metal interconnect removal rate in semiconductor wafers |
| KR20060099313A (ko) * | 2005-03-11 | 2006-09-19 | 삼성전자주식회사 | 산화막 연마억제제를 함유하는 화학 기계 연마 슬러리 |
| US20070075042A1 (en) * | 2005-10-05 | 2007-04-05 | Siddiqui Junaid A | Stabilizer-Fenton's reaction metal-vinyl pyridine polymer-surface-modified chemical mechanical planarization composition and associated method |
| US7803711B2 (en) | 2007-09-18 | 2010-09-28 | Cabot Microelectronics Corporation | Low pH barrier slurry based on titanium dioxide |
| CN101724346A (zh) * | 2008-10-10 | 2010-06-09 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
| JP2011014840A (ja) * | 2009-07-06 | 2011-01-20 | Adeka Corp | Cmp用研磨組成物 |
-
2012
- 2012-04-13 KR KR1020120038419A patent/KR101257336B1/ko active Active
- 2012-09-14 CN CN201280065754.4A patent/CN104066807B/zh active Active
- 2012-09-14 JP JP2014539865A patent/JP6030145B2/ja active Active
- 2012-09-14 WO PCT/KR2012/007367 patent/WO2013154236A1/fr not_active Ceased
- 2012-09-14 US US14/357,768 patent/US20140312266A1/en not_active Abandoned
- 2012-09-21 TW TW101134779A patent/TWI608061B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| CN104066807B (zh) | 2016-06-29 |
| KR101257336B1 (ko) | 2013-04-23 |
| WO2013154236A8 (fr) | 2014-04-03 |
| TWI608061B (zh) | 2017-12-11 |
| TW201341490A (zh) | 2013-10-16 |
| JP2015502417A (ja) | 2015-01-22 |
| WO2013154236A1 (fr) | 2013-10-17 |
| US20140312266A1 (en) | 2014-10-23 |
| CN104066807A (zh) | 2014-09-24 |
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