JP6030145B2 - 研磨用スラリー及びこれを用いた基板の研磨方法 - Google Patents

研磨用スラリー及びこれを用いた基板の研磨方法 Download PDF

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Publication number
JP6030145B2
JP6030145B2 JP2014539865A JP2014539865A JP6030145B2 JP 6030145 B2 JP6030145 B2 JP 6030145B2 JP 2014539865 A JP2014539865 A JP 2014539865A JP 2014539865 A JP2014539865 A JP 2014539865A JP 6030145 B2 JP6030145 B2 JP 6030145B2
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Japan
Prior art keywords
slurry
polishing
content
tungsten
titanium oxide
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Japanese (ja)
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JP2015502417A (ja
Inventor
ジェグン パク
ジェグン パク
コンソップ イ
コンソップ イ
ジンヒョン パク
ジンヒョン パク
ジェヒョン イム
ジェヒョン イム
ジョンヨン チェ
ジョンヨン チェ
ヒソップ ファン
ヒソップ ファン
ハオ ツイ
ハオ ツイ
Original Assignee
ユービーマテリアルズ インコーポレイテッド
ユービーマテリアルズ インコーポレイテッド
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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1409Abrasive particles per se
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40Chemomechanical polishing [CMP]
    • H10P52/403Chemomechanical polishing [CMP] of conductive or resistive materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/031Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2014539865A 2012-04-13 2012-09-14 研磨用スラリー及びこれを用いた基板の研磨方法 Active JP6030145B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020120038419A KR101257336B1 (ko) 2012-04-13 2012-04-13 연마용 슬러리 및 이를 이용한 기판 연마 방법
KR10-2012-0038419 2012-04-13
PCT/KR2012/007367 WO2013154236A1 (fr) 2012-04-13 2012-09-14 Bouillie de polissage et procédé de polissage l'utilisant

Publications (2)

Publication Number Publication Date
JP2015502417A JP2015502417A (ja) 2015-01-22
JP6030145B2 true JP6030145B2 (ja) 2016-11-24

Family

ID=48443660

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014539865A Active JP6030145B2 (ja) 2012-04-13 2012-09-14 研磨用スラリー及びこれを用いた基板の研磨方法

Country Status (6)

Country Link
US (1) US20140312266A1 (fr)
JP (1) JP6030145B2 (fr)
KR (1) KR101257336B1 (fr)
CN (1) CN104066807B (fr)
TW (1) TWI608061B (fr)
WO (1) WO2013154236A1 (fr)

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US20140199840A1 (en) * 2013-01-11 2014-07-17 Applied Materials, Inc. Chemical mechanical polishing apparatus and methods
KR101682097B1 (ko) * 2014-08-26 2016-12-02 주식회사 케이씨텍 연마 슬러리 조성물
CN106661429B (zh) * 2014-08-26 2019-07-05 凯斯科技股份有限公司 抛光浆料组合物
WO2016032145A1 (fr) * 2014-08-26 2016-03-03 주식회사 케이씨텍 Composition de suspension de polissage
KR101834418B1 (ko) * 2015-10-02 2018-03-05 유비머트리얼즈주식회사 슬러리 및 이를 이용한 기판 연마 방법
CN107914211A (zh) * 2016-10-11 2018-04-17 中芯国际集成电路制造(上海)有限公司 一种化学机械研磨方法
US10647887B2 (en) * 2018-01-08 2020-05-12 Cabot Microelectronics Corporation Tungsten buff polishing compositions with improved topography
JP2019183023A (ja) * 2018-04-12 2019-10-24 株式会社イリス 洗浄防汚剤及び洗浄防汚方法
JP7368997B2 (ja) * 2019-09-30 2023-10-25 株式会社フジミインコーポレーテッド 研磨用組成物
KR102415203B1 (ko) * 2020-08-24 2022-06-30 에스케이씨솔믹스 주식회사 연마패드 및 이를 이용한 반도체 소자의 제조방법

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Also Published As

Publication number Publication date
CN104066807B (zh) 2016-06-29
KR101257336B1 (ko) 2013-04-23
WO2013154236A8 (fr) 2014-04-03
TWI608061B (zh) 2017-12-11
TW201341490A (zh) 2013-10-16
JP2015502417A (ja) 2015-01-22
WO2013154236A1 (fr) 2013-10-17
US20140312266A1 (en) 2014-10-23
CN104066807A (zh) 2014-09-24

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