WO2013154236A8 - Bouillie de polissage et procédé de polissage l'utilisant - Google Patents

Bouillie de polissage et procédé de polissage l'utilisant Download PDF

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Publication number
WO2013154236A8
WO2013154236A8 PCT/KR2012/007367 KR2012007367W WO2013154236A8 WO 2013154236 A8 WO2013154236 A8 WO 2013154236A8 KR 2012007367 W KR2012007367 W KR 2012007367W WO 2013154236 A8 WO2013154236 A8 WO 2013154236A8
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
same
slurry
abrasive
polishing slurry
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2012/007367
Other languages
English (en)
Other versions
WO2013154236A1 (fr
Inventor
Jea Gun Park
Gon Sub Lee
Jin Hyung Park
Jae Hyung Lim
Jong Young Cho
Hee Sub Hwang
Hao Cui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UBMATERIALS Inc
Original Assignee
UBMATERIALS Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by UBMATERIALS Inc filed Critical UBMATERIALS Inc
Priority to CN201280065754.4A priority Critical patent/CN104066807B/zh
Priority to JP2014539865A priority patent/JP6030145B2/ja
Priority to US14/357,768 priority patent/US20140312266A1/en
Publication of WO2013154236A1 publication Critical patent/WO2013154236A1/fr
Publication of WO2013154236A8 publication Critical patent/WO2013154236A8/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

L'invention concerne une bouillie de polissage utilisée dans un procédé de polissage de tungstène et un procédé de polissage l'utilisant. La bouillie comprend un abrasif pour effectuer un polissage et un agent favorisant l'oxydation pour favoriser la formation d'un oxyde. L'abrasif comprend des particules d'oxyde de titane.
PCT/KR2012/007367 2012-04-13 2012-09-14 Bouillie de polissage et procédé de polissage l'utilisant Ceased WO2013154236A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201280065754.4A CN104066807B (zh) 2012-04-13 2012-09-14 研磨浆料及使用其的研磨方法
JP2014539865A JP6030145B2 (ja) 2012-04-13 2012-09-14 研磨用スラリー及びこれを用いた基板の研磨方法
US14/357,768 US20140312266A1 (en) 2012-04-13 2012-09-14 Polishing slurry and method of polishing using the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020120038419A KR101257336B1 (ko) 2012-04-13 2012-04-13 연마용 슬러리 및 이를 이용한 기판 연마 방법
KR10-2012-0038419 2012-04-13

Publications (2)

Publication Number Publication Date
WO2013154236A1 WO2013154236A1 (fr) 2013-10-17
WO2013154236A8 true WO2013154236A8 (fr) 2014-04-03

Family

ID=48443660

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/007367 Ceased WO2013154236A1 (fr) 2012-04-13 2012-09-14 Bouillie de polissage et procédé de polissage l'utilisant

Country Status (6)

Country Link
US (1) US20140312266A1 (fr)
JP (1) JP6030145B2 (fr)
KR (1) KR101257336B1 (fr)
CN (1) CN104066807B (fr)
TW (1) TWI608061B (fr)
WO (1) WO2013154236A1 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140199840A1 (en) * 2013-01-11 2014-07-17 Applied Materials, Inc. Chemical mechanical polishing apparatus and methods
KR101682097B1 (ko) * 2014-08-26 2016-12-02 주식회사 케이씨텍 연마 슬러리 조성물
CN106661429B (zh) * 2014-08-26 2019-07-05 凯斯科技股份有限公司 抛光浆料组合物
WO2016032145A1 (fr) * 2014-08-26 2016-03-03 주식회사 케이씨텍 Composition de suspension de polissage
KR101834418B1 (ko) * 2015-10-02 2018-03-05 유비머트리얼즈주식회사 슬러리 및 이를 이용한 기판 연마 방법
CN107914211A (zh) * 2016-10-11 2018-04-17 中芯国际集成电路制造(上海)有限公司 一种化学机械研磨方法
US10647887B2 (en) * 2018-01-08 2020-05-12 Cabot Microelectronics Corporation Tungsten buff polishing compositions with improved topography
JP2019183023A (ja) * 2018-04-12 2019-10-24 株式会社イリス 洗浄防汚剤及び洗浄防汚方法
JP7368997B2 (ja) * 2019-09-30 2023-10-25 株式会社フジミインコーポレーテッド 研磨用組成物
KR102415203B1 (ko) * 2020-08-24 2022-06-30 에스케이씨솔믹스 주식회사 연마패드 및 이를 이용한 반도체 소자의 제조방법

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US6152976A (en) * 1996-08-30 2000-11-28 Showa Denko Kabushiki Kaisha Abrasive composition for disc substrate, and process for polishing disc substrate
US6068787A (en) * 1996-11-26 2000-05-30 Cabot Corporation Composition and slurry useful for metal CMP
US6083419A (en) * 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
DE69942615D1 (de) * 1998-10-23 2010-09-02 Fujifilm Electronic Materials Eine chemisch-mechanisch polierende aufschlämmung, eine beschleunigerlösung enthaltend
US6478837B1 (en) * 1999-06-28 2002-11-12 Showa Denko K.K. Abrasive composition substrate for magnetic recording disks and process for producing substrates for magnetic recording disk
TW581803B (en) * 1999-06-28 2004-04-01 Showa Denko Kk Composition for polishing substrate for magnetic disk and method for producing substrate for magnetic disk
US6280490B1 (en) * 1999-09-27 2001-08-28 Fujimi America Inc. Polishing composition and method for producing a memory hard disk
WO2001048109A1 (fr) * 1999-12-27 2001-07-05 Taiho Industries, Co., Ltd. Agent de traitement de surface dure, agent anti-salissures et procede de traitement de surface
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JP2002003825A (ja) * 2000-06-21 2002-01-09 Asahi Kasei Corp 光活性を有する半導体基板金属膜研磨用組成物
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Also Published As

Publication number Publication date
CN104066807B (zh) 2016-06-29
KR101257336B1 (ko) 2013-04-23
TWI608061B (zh) 2017-12-11
TW201341490A (zh) 2013-10-16
JP2015502417A (ja) 2015-01-22
JP6030145B2 (ja) 2016-11-24
WO2013154236A1 (fr) 2013-10-17
US20140312266A1 (en) 2014-10-23
CN104066807A (zh) 2014-09-24

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