JP6100778B2 - スロット内に形成される反射壁部を備えるled混合チャンバ - Google Patents
スロット内に形成される反射壁部を備えるled混合チャンバ Download PDFInfo
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- JP6100778B2 JP6100778B2 JP2014525543A JP2014525543A JP6100778B2 JP 6100778 B2 JP6100778 B2 JP 6100778B2 JP 2014525543 A JP2014525543 A JP 2014525543A JP 2014525543 A JP2014525543 A JP 2014525543A JP 6100778 B2 JP6100778 B2 JP 6100778B2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
- H10H20/8512—Wavelength conversion materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
- H10H20/856—Reflecting means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0362—Manufacture or treatment of packages of encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8515—Wavelength conversion means not being in contact with the bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
- H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
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- Led Device Packages (AREA)
- Liquid Crystal (AREA)
Description
Claims (18)
- LEDを収容する混合チャンバを製造する方法であって、
基板を設けるステップであって、前記基板が第1の複数の混合チャンバ領域を持つステップと、
前記基板の上面に第1の複数のLEDチップを取り付けるステップであって、各混合チャンバ領域が少なくとも1つのLEDチップを収容するステップと、
前記複数のLEDチップを取り囲んで前記基板の上に金属リングを設けるステップであって、前記金属リングはエッチング停止層を提供し、前記金属リングは少なくともデバイスの個片化ラインまで延在する幅を有する、ステップと、
前記基板及びLEDチップを覆うカバー層を形成するステップと、
前記カバー層を形成するステップの後に、前記金属リングの上に位置するスロットを形成するよう、前記カバー層の少なくとも一部をエッチングするステップと、
各混合チャンバを取り囲む反射壁部を形成するよう、前記スロットを反射材料で少なくとも部分的に充填するステップと、
個々の混合チャンバに分離するよう、前記基板を個片化するステップとを有し、
前記反射壁部は、前記複数のLEDチップに面する内表面と、外表面とを有し、
前記カバー層の一部が、前記反射材料の前記外表面の周囲に存在し、
前記金属リングは、前記反射材料の前記外表面の外側に前記カバー層まで延在する、
方法。 - 前記基板の前記上面の少なくとも一部が反射性である請求項1に記載の方法。
- 前記エッチングするステップが、前記金属リングの少なくとも一部が露出されるまで前記カバー層をエッチングすることを有する請求項1に記載の方法。
- 前記エッチングするステップが、レーザを用いて前記カバー層をエッチングすることを有する請求項1に記載の方法。
- 前記スロットを少なくとも部分的に充填するステップが、前記スロット内に反射材料を堆積させることを有する請求項1に記載の方法。
- 各混合チャンバ領域が、第2の複数のLEDチップを含む請求項1に記載の方法。
- 前記カバー層が、カプセル化層である請求項1に記載の方法。
- 前記LEDチップがベアチップである請求項1に記載の方法。
- 前記基板が、金属パッドを持ち、前記基板の前記上面に前記LEDチップを取り付けるステップが、前記金属パッドに前記LEDチップの電極を接合することを有する請求項1に記載の方法。
- 前記LEDチップが、青色光を発し、前記方法が、前記LEDチップの上方に蛍光体層を堆積させるステップを更に有する請求項1に記載の方法。
- 前記カバー層が、実質的に平坦な表面を持つ請求項1に記載の方法。
- LEDを収容する混合チャンバであって、
基板であって、前記基板の上面の少なくとも一部が反射性である基板と、
前記基板の前記上面に取り付けられる複数のLEDチップと、
前記複数のLEDチップを取り囲んで前記基板の上に形成された金属リングであって、前記金属リングはエッチング停止層を提供し、前記金属リングは少なくともデバイスの個片化ラインまで延在する幅を有する、金属リングと、
前記基板及びLEDチップを覆うカバー層と、
前記金属リングの上に位置して前記カバー層に形成されたスロットであって、前記スロットが、前記混合チャンバの外形寸法に対応するスロットと、
前記スロットを少なくとも部分的に充填し、前記混合チャンバを取り囲む反射壁部を形成する反射材料と
を有し、
前記反射壁部は、前記複数のLEDチップに面する内表面と、外表面とを有し、
前記カバー層の一部が、前記反射材料の前記外表面の周囲に存在し、
前記金属リングは、前記反射材料の前記外表面の外側に前記カバー層まで延在している、
チャンバ。 - 前記LEDチップが、青色光を発し、前記チャンバが、前記カバー層を覆う波長変換層を更に有する請求項12に記載のチャンバ。
- 前記波長変換層が、シート材料、液体材料、部分的に硬化した材料、又はスピンオン材料として付される請求項13に記載のチャンバ。
- 前記カバー層が、実質的に平坦な上面を持つ請求項12に記載のチャンバ。
- 前記カバー層が、前記LEDチップをカプセル化している請求項12に記載のチャンバ。
- 前記LEDチップがベアチップである請求項12に記載のチャンバ。
- 前記基板が、金属パッドを持ち、前記金属パッドに前記LEDチップの電極が接合されている請求項12に記載のチャンバ。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161523869P | 2011-08-16 | 2011-08-16 | |
| US61/523,869 | 2011-08-16 | ||
| PCT/IB2012/054128 WO2013024428A1 (en) | 2011-08-16 | 2012-08-14 | Led mixing chamber with reflective walls formed in slots |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2014522129A JP2014522129A (ja) | 2014-08-28 |
| JP6100778B2 true JP6100778B2 (ja) | 2017-03-22 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014525543A Active JP6100778B2 (ja) | 2011-08-16 | 2012-08-14 | スロット内に形成される反射壁部を備えるled混合チャンバ |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US9246072B2 (ja) |
| EP (1) | EP2745320B1 (ja) |
| JP (1) | JP6100778B2 (ja) |
| KR (1) | KR101945532B1 (ja) |
| TW (1) | TWI573295B (ja) |
| WO (1) | WO2013024428A1 (ja) |
Families Citing this family (10)
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| WO2013024428A1 (en) * | 2011-08-16 | 2013-02-21 | Koninklijke Philips Electronics N.V. | Led mixing chamber with reflective walls formed in slots |
| US10043960B2 (en) * | 2011-11-15 | 2018-08-07 | Cree, Inc. | Light emitting diode (LED) packages and related methods |
| CN103311261B (zh) * | 2013-05-24 | 2016-02-17 | 安徽三安光电有限公司 | 集成led发光器件及其制作方法 |
| CN103892940B (zh) * | 2013-12-02 | 2016-08-17 | 北京工业大学 | 一种充液型笼球式主动脉瓣支架系统 |
| US9954144B2 (en) * | 2014-01-10 | 2018-04-24 | Cree, Inc. | Wafer level contact pad solder bumping for surface mount devices with non-planar recessed contacting surfaces |
| EP3800673B1 (en) | 2015-11-30 | 2024-12-25 | Nichia Corporation | Light emitting device |
| US10256218B2 (en) * | 2017-07-11 | 2019-04-09 | Samsung Electronics Co., Ltd. | Light emitting device package |
| US11450648B2 (en) | 2019-03-19 | 2022-09-20 | Seoul Viosys Co., Ltd. | Light emitting device package and application thereof |
| US11437551B2 (en) * | 2019-03-19 | 2022-09-06 | Seoul Viosys Co., Ltd. | Light emitting device package and application thereof |
| US11940662B2 (en) * | 2020-10-27 | 2024-03-26 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and method for forming the same |
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| WO2013024428A1 (en) * | 2011-08-16 | 2013-02-21 | Koninklijke Philips Electronics N.V. | Led mixing chamber with reflective walls formed in slots |
-
2012
- 2012-08-14 WO PCT/IB2012/054128 patent/WO2013024428A1/en not_active Ceased
- 2012-08-14 US US14/237,448 patent/US9246072B2/en active Active
- 2012-08-14 EP EP12781151.1A patent/EP2745320B1/en active Active
- 2012-08-14 JP JP2014525543A patent/JP6100778B2/ja active Active
- 2012-08-14 KR KR1020147006697A patent/KR101945532B1/ko active Active
- 2012-08-16 TW TW101129775A patent/TWI573295B/zh active
-
2016
- 2016-01-14 US US14/996,192 patent/US9391246B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US20140175466A1 (en) | 2014-06-26 |
| WO2013024428A1 (en) | 2013-02-21 |
| KR101945532B1 (ko) | 2019-02-07 |
| EP2745320A1 (en) | 2014-06-25 |
| TWI573295B (zh) | 2017-03-01 |
| US20160133801A1 (en) | 2016-05-12 |
| EP2745320B1 (en) | 2017-02-22 |
| JP2014522129A (ja) | 2014-08-28 |
| US9246072B2 (en) | 2016-01-26 |
| CN103733335A (zh) | 2014-04-16 |
| KR20140053316A (ko) | 2014-05-07 |
| TW201322501A (zh) | 2013-06-01 |
| US9391246B2 (en) | 2016-07-12 |
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