JP6772995B2 - Ｓｏｉウェーハの製造方法およびｓｏｉウェーハ - Google Patents

Ｓｏｉウェーハの製造方法およびｓｏｉウェーハ Download PDF

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Publication number
JP6772995B2
JP6772995B2 JP2017183912A JP2017183912A JP6772995B2 JP 6772995 B2 JP6772995 B2 JP 6772995B2 JP 2017183912 A JP2017183912 A JP 2017183912A JP 2017183912 A JP2017183912 A JP 2017183912A JP 6772995 B2 JP6772995 B2 JP 6772995B2
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Japan
Prior art keywords
diamond
support substrate
layer
soi wafer
substrate
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JP2017183912A
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Japanese (ja)
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JP2019062020A (ja
Inventor
祥泰 古賀
祥泰 古賀
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Sumco Corp
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Sumco Corp
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Priority to JP2017183912A priority Critical patent/JP6772995B2/ja
Priority to FR1858146A priority patent/FR3071663B1/fr
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6902—Inorganic materials composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6506—Formation of intermediate materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1922—Preparing SOI wafers using silicon etch back techniques, e.g. BESOI or ELTRAN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3206—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3406—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
JP2017183912A 2017-09-25 2017-09-25 Ｓｏｉウェーハの製造方法およびｓｏｉウェーハ Active JP6772995B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2017183912A JP6772995B2 (ja) 2017-09-25 2017-09-25 Ｓｏｉウェーハの製造方法およびｓｏｉウェーハ
FR1858146A FR3071663B1 (fr) 2017-09-25 2018-09-11 Procede de fabrication de plaque soi, et plaque soi

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017183912A JP6772995B2 (ja) 2017-09-25 2017-09-25 Ｓｏｉウェーハの製造方法およびｓｏｉウェーハ

Publications (2)

Publication Number Publication Date
JP2019062020A JP2019062020A (ja) 2019-04-18
JP6772995B2 true JP6772995B2 (ja) 2020-10-21

Family

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JP2017183912A Active JP6772995B2 (ja) 2017-09-25 2017-09-25 Ｓｏｉウェーハの製造方法およびｓｏｉウェーハ

Country Status (2)

Country Link
JP (1) JP6772995B2 (fr)
FR (1) FR3071663B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7071775B2 (ja) * 2019-05-10 2022-05-19 国立研究開発法人産業技術総合研究所 ダイヤモンド結晶体を備える複合体
JP7600973B2 (ja) 2021-12-08 2024-12-17 株式会社Sumco 積層ウェーハ及びその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01138198A (ja) * 1987-11-26 1989-05-31 Nec Corp ダイヤモンド膜の製造方法
JPH02206118A (ja) * 1989-02-06 1990-08-15 Hitachi Ltd 半導体素子
JPH09263488A (ja) * 1996-03-27 1997-10-07 Matsushita Electric Ind Co Ltd ダイヤモンド膜の製造方法
JP3951324B2 (ja) * 1996-09-03 2007-08-01 住友電気工業株式会社 気相合成ダイヤモンドおよびその製造方法
JP4654389B2 (ja) * 2006-01-16 2011-03-16 株式会社ムサシノエンジニアリング ダイヤモンドヒートスプレッダの常温接合方法，及び半導体デバイスの放熱部
JP2010258083A (ja) * 2009-04-22 2010-11-11 Panasonic Corp Ｓｏｉウェーハ、その製造方法および半導体装置の製造方法
KR101985526B1 (ko) * 2011-01-31 2019-06-03 다다또모 스가 접합 기판 제작 방법, 접합 기판, 기판 접합 방법, 접합 기판 제작 장치 및 기판 접합체
JP6248458B2 (ja) * 2013-08-05 2017-12-20 株式会社Sumco 貼り合わせウェーハの製造方法および貼り合わせウェーハ

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Publication number Publication date
FR3071663A1 (fr) 2019-03-29
JP2019062020A (ja) 2019-04-18
FR3071663B1 (fr) 2022-02-18

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