JP7208373B2 - 集積キャパシタおよび集積キャパシタの製造方法 - Google Patents

集積キャパシタおよび集積キャパシタの製造方法 Download PDF

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Publication number
JP7208373B2
JP7208373B2 JP2021519598A JP2021519598A JP7208373B2 JP 7208373 B2 JP7208373 B2 JP 7208373B2 JP 2021519598 A JP2021519598 A JP 2021519598A JP 2021519598 A JP2021519598 A JP 2021519598A JP 7208373 B2 JP7208373 B2 JP 7208373B2
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layer
dielectric layer
dielectric
integrated capacitor
layers
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Japanese (ja)
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JP2022504537A (ja
Inventor
ベッチャー，ノルマン
エールバヒャー，トビアス
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Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
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Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/40—Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/045—Manufacture or treatment of capacitors having potential barriers, e.g. varactors
    • H10D1/047—Manufacture or treatment of capacitors having potential barriers, e.g. varactors of conductor-insulator-semiconductor capacitors, e.g. trench capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H10D1/665—Trench conductor-insulator-semiconductor capacitors, e.g. trench MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
JP2021519598A 2018-10-09 2019-10-08 集積キャパシタおよび集積キャパシタの製造方法 Active JP7208373B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102018217249.8 2018-10-09
DE102018217249 2018-10-09
DE102019204503.0A DE102019204503B3 (de) 2018-10-09 2019-03-29 Integrierter Kondensator und Verfahren zur Herstellung eines integrierten Kondensators
DE102019204503.0 2019-03-29
PCT/EP2019/077253 WO2020074534A2 (de) 2018-10-09 2019-10-08 Integrierter kondensator und verfahren zur herstellung eines integrierten kondensators

Publications (2)

Publication Number Publication Date
JP2022504537A JP2022504537A (ja) 2022-01-13
JP7208373B2 true JP7208373B2 (ja) 2023-01-18

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ID=69725689

Family Applications (1)

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JP2021519598A Active JP7208373B2 (ja) 2018-10-09 2019-10-08 集積キャパシタおよび集積キャパシタの製造方法

Country Status (5)

Country Link
US (1) US11742435B2 (de)
EP (1) EP3864713A2 (de)
JP (1) JP7208373B2 (de)
DE (1) DE102019204503B3 (de)
WO (1) WO2020074534A2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112019002197T5 (de) * 2018-04-27 2021-01-14 Murata Manufacturing Co., Ltd. Kondensator
DE102020127640B4 (de) * 2020-07-10 2024-05-08 X-FAB Global Services GmbH Halbleiterbauelement für Leistungselektronikanwendungen und Verfahren zum Betrieb eines Leistungsmoduls
WO2022239722A1 (ja) * 2021-05-10 2022-11-17 株式会社村田製作所 半導体装置、マッチング回路及びフィルタ回路
EP4656377A1 (de) * 2023-01-23 2025-12-03 Sekisui Chemical Co., Ltd. Laminierter körper, verfahren zur herstellung eines laminierten körpers, element, bilderzeugungsgerät
DE102024200211B3 (de) 2024-01-10 2025-03-06 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Verfahren zur Herstellung einer Grabenkondensatorstruktur und Grabenkondensator
EP4618161A1 (de) * 2024-03-11 2025-09-17 Murata Manufacturing Co., Ltd. Elektrische vorrichtung mit einem kondensator mit verbesserter dielektrischer struktur
EP4718486A1 (de) * 2024-09-27 2026-04-01 Murata Manufacturing Co., Ltd. Elektrische vorrichtung mit einem kondensator für hochspannungsanwendungen und verfahren zur herstellung davon
EP4738402A1 (de) * 2024-10-31 2026-05-06 Murata Manufacturing Co., Ltd. Elektrische vorrichtung mit einem kondensator aus einer porösen struktur und leitfähigen drähten

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001111000A (ja) 1999-08-14 2001-04-20 Samsung Electronics Co Ltd 半導体素子及びその製造方法
JP2002524860A (ja) 1998-08-28 2002-08-06 クリー インコーポレイテッド 炭化珪素半導体構造における積層誘電体
JP2006222390A (ja) 2005-02-14 2006-08-24 Tdk Corp キャパシタ及びその製造方法、それを用いたフィルタ
JP2013115371A (ja) 2011-11-30 2013-06-10 Sumitomo Electric Device Innovations Inc 容量素子
WO2017145515A1 (ja) 2016-02-22 2017-08-31 株式会社村田製作所 半導体コンデンサおよび電源モジュール

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0216763A (ja) * 1988-07-05 1990-01-19 Toshiba Corp 半導体装置の製造方法
JPH05190796A (ja) * 1991-07-30 1993-07-30 Internatl Business Mach Corp <Ibm> ダイナミック・ランダム・アクセス・メモリ・セル用誘電体皮膜およびその形成方法
US6077737A (en) * 1998-06-02 2000-06-20 Mosel Vitelic, Inc. Method for forming a DRAM having improved capacitor dielectric layers
US6989579B2 (en) * 2001-12-26 2006-01-24 Lucent Technologies Inc. Adhering layers to metals with dielectric adhesive layers
US6787419B2 (en) * 2003-01-14 2004-09-07 Ememory Technology Inc. Method of forming an embedded memory including forming three silicon or polysilicon layers
US7229880B2 (en) * 2003-11-19 2007-06-12 Promos Technologies Inc. Precision creation of inter-gates insulator
EP1691383A1 (de) * 2005-02-14 2006-08-16 TDK Corporation Kondensator, Verfahren zu seiner Herstellung, diesen Kondensator verwendendes Filter, und dielektrischer Film für diesen Kondensator
DE102006017487A1 (de) 2006-04-13 2007-10-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Integriertes Beschaltungsbauelement auf Halbleiterbasis zur Schaltentlastung, Spannungsbegrenzung bzw. Schwingungsdämpfung
KR100894098B1 (ko) * 2007-05-03 2009-04-20 주식회사 하이닉스반도체 빠른 소거속도 및 향상된 리텐션 특성을 갖는 불휘발성메모리소자 및 그 제조방법
DE102014223904A1 (de) * 2014-11-24 2016-05-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Kondensator und Verfahren zum Herstellen desselben

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002524860A (ja) 1998-08-28 2002-08-06 クリー インコーポレイテッド 炭化珪素半導体構造における積層誘電体
JP2001111000A (ja) 1999-08-14 2001-04-20 Samsung Electronics Co Ltd 半導体素子及びその製造方法
JP2006222390A (ja) 2005-02-14 2006-08-24 Tdk Corp キャパシタ及びその製造方法、それを用いたフィルタ
JP2013115371A (ja) 2011-11-30 2013-06-10 Sumitomo Electric Device Innovations Inc 容量素子
WO2017145515A1 (ja) 2016-02-22 2017-08-31 株式会社村田製作所 半導体コンデンサおよび電源モジュール

Also Published As

Publication number Publication date
US20210257502A1 (en) 2021-08-19
WO2020074534A2 (de) 2020-04-16
US11742435B2 (en) 2023-08-29
JP2022504537A (ja) 2022-01-13
EP3864713A2 (de) 2021-08-18
DE102019204503B3 (de) 2020-03-26
WO2020074534A3 (de) 2020-06-11

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