JP7550859B2 - 高密度プラズマ化学気相堆積チャンバ - Google Patents
高密度プラズマ化学気相堆積チャンバ Download PDFInfo
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- JP7550859B2 JP7550859B2 JP2022536555A JP2022536555A JP7550859B2 JP 7550859 B2 JP7550859 B2 JP 7550859B2 JP 2022536555 A JP2022536555 A JP 2022536555A JP 2022536555 A JP2022536555 A JP 2022536555A JP 7550859 B2 JP7550859 B2 JP 7550859B2
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Description
Claims (11)
- プラズマ堆積チャンバであって、
内部領域の周囲に配置されたチャンバ本体と、
内部領域内の基板支持体と、
複数の支持部材と、複数の支持部材のうちの1又は複数に各々結合された複数の有孔タイルとを有し、基板支持体の上方に配置されたシャワーヘッドと、
前記複数の有孔タイルの上方に隔離して配置される、複数の誘電体プレートと、
前記複数の誘電体プレートの各々の上に配置される複数の誘導結合器と、を備え、
前記複数の支持部材の各々は、前記誘電体プレートのうちの1つと前記有孔タイルのうちの1つとの間に形成される領域に前駆体ガスを供給するように構成された導管を含み、前記導管は各々、流量制限装置を含み、
複数の支持部材は、第1の支持部材と第2の支持部材とを含み、
第1の支持部材内の導管の流量制限装置は第1の直径を有し、
第2の支持部材内の導管の流量制限装置は、第1の直径とは異なる第2の直径を有する、
プラズマ堆積チャンバ。 - 第1の支持部材内の導管の流量制限装置は第1の長さを有し、第2の支持部材内の導管の流量制限装置は第1の長さとは異なる第2の長さを有する、請求項1に記載のチャンバ。
- 前記複数の有孔タイル及び前記複数の支持部材は各々、界面部分を含む、請求項1に記載のチャンバ。
- 前記有孔タイルの各々の周囲に位置決めされたカバープレートを更に備える、請求項1に記載のチャンバ。
- 前記カバープレートは、その中に形成された開口部を含む、請求項4に記載のチャンバ。
- 各有孔タイルは、前記カバープレートに形成された開口部に整列する開口部を含む、請求項5に記載のチャンバ。
- 前記シャワーヘッドは、中央ゾーン、前記中央ゾーンに隣接する中間ゾーン、及び前記中間ゾーンに隣接する外側ゾーンを含む個別のガス供給ゾーンに分割されている、請求項1に記載のチャンバ。
- プラズマ堆積チャンバ用のシャワーヘッドであって、
第1の支持部材及び第2の支持部材を含む複数の支持部材であって、各支持部材は、1以上の第1の支持面及び1以上の第2の支持面を含む支持部材であって、複数の第1の支持面は、複数の第2の支持面と隔離して配置される、支持部材と、
複数の有孔タイルと複数の誘電体プレートとを含む複数のガス供給アセンブリであって、前記複数のガス供給アセンブリは各々、
前記複数の第1の支持面のうちの第1の支持面に配置された有孔タイルと、
前記複数の第2の支持面のうちの第2の支持面に配置された誘電体プレートと
を含み、前記誘電体プレートの面と前記有孔タイルの面との間にガス領域が画定される、複数のガス供給アセンブリと、
各導管が、前記複数のガス供給アセンブリのガス領域の1つに前駆体ガスを供給するように構成された、第1の支持部材における第1の導管および第2の支持部材における第2の導管を含む複数の導管であって、前記導管は各々、流量制限装置を含み、
第1の導管の流量制限装置は第1の長さを有し、
第2の導管の流量制限装置は、第1の長さとは異なる第2の長さを有する、
複数の導管と、
前記シャワーヘッド内の前記複数のガス供給アセンブリの各々の上に配置されたコイルと
を備える、シャワーヘッド。 - 第1の支持部材内の導管の流量制限器は第1の直径を有し、第2の支持部材内の導管の流量制限器は第1の直径とは異なる第2の直径を有する、請求項8に記載のシャワーヘッド。
- 前記複数の有孔タイルの各々と前記支持部材とは、界面部分を含む、請求項8に記載のシャワーヘッド。
- 前記有孔タイルの各々の周囲に位置決めされたカバープレートを更に備える、請求項8に記載のシャワーヘッド。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/US2019/066929 WO2021126172A1 (en) | 2019-12-17 | 2019-12-17 | High density plasma enhanced chemical vapor deposition chamber |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2023507111A JP2023507111A (ja) | 2023-02-21 |
| JP7550859B2 true JP7550859B2 (ja) | 2024-09-13 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022536555A Active JP7550859B2 (ja) | 2019-12-17 | 2019-12-17 | 高密度プラズマ化学気相堆積チャンバ |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP7550859B2 (ja) |
| KR (1) | KR102776470B1 (ja) |
| CN (1) | CN114787415B (ja) |
| TW (1) | TWI899112B (ja) |
| WO (1) | WO2021126172A1 (ja) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20260045003A (ko) * | 2021-08-25 | 2026-04-02 | 어플라이드 머티어리얼스, 인코포레이티드 | 클램핑된 듀얼-채널 샤워헤드 |
| US12080516B2 (en) * | 2021-11-23 | 2024-09-03 | Applied Materials, Inc. | High density plasma enhanced process chamber |
| US20240087847A1 (en) * | 2022-09-09 | 2024-03-14 | Applied Materials, Inc. | Symmetric antenna arrays for high density plasma enhanced process chamber |
| CN115261820B (zh) * | 2022-09-20 | 2023-01-20 | 拓荆科技(上海)有限公司 | 一种反应腔结构及其半导体设备 |
| WO2025101451A1 (en) * | 2023-11-07 | 2025-05-15 | Applied Materials, Inc. | Antenna arrays with electrode for high density plasma enhanced process chamber |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006073354A (ja) | 2004-09-02 | 2006-03-16 | Matsushita Electric Ind Co Ltd | プラズマ処理装置 |
| JP2009246129A (ja) | 2008-03-31 | 2009-10-22 | Tokyo Electron Ltd | プラズマcvd窒化珪素膜の成膜方法及び半導体集積回路装置の製造方法 |
| JP2011035201A (ja) | 2009-08-03 | 2011-02-17 | Sumitomo Electric Ind Ltd | 気相処理装置、気相処理方法および基板 |
| JP2015230988A (ja) | 2014-06-05 | 2015-12-21 | 東京エレクトロン株式会社 | プラズマ処理装置およびクリーニング方法 |
| US20170178867A1 (en) | 2015-12-18 | 2017-06-22 | Applied Materials, Inc. | Gas diffuser having grooved hollow cathodes |
| JP2018088336A (ja) | 2016-11-28 | 2018-06-07 | 東京エレクトロン株式会社 | プラズマ処理装置及びシャワーヘッド |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100675097B1 (ko) * | 2000-11-15 | 2007-01-29 | 주성엔지니어링(주) | 유도결합형 플라즈마 장치 |
| US6820570B2 (en) * | 2001-08-15 | 2004-11-23 | Nobel Biocare Services Ag | Atomic layer deposition reactor |
| US8328939B2 (en) * | 2004-05-12 | 2012-12-11 | Applied Materials, Inc. | Diffuser plate with slit valve compensation |
| US20060228490A1 (en) * | 2005-04-07 | 2006-10-12 | Applied Materials, Inc. | Gas distribution uniformity improvement by baffle plate with multi-size holes for large size PECVD systems |
| US20110204023A1 (en) * | 2010-02-22 | 2011-08-25 | No-Hyun Huh | Multi inductively coupled plasma reactor and method thereof |
| KR20110109216A (ko) * | 2010-03-30 | 2011-10-06 | (주)울텍 | 유도 결합형 플라즈마 소스형 샤워 헤드를 가지는 화학기상 증착 장치 |
| US20110278260A1 (en) * | 2010-05-14 | 2011-11-17 | Applied Materials, Inc. | Inductive plasma source with metallic shower head using b-field concentrator |
| US11384432B2 (en) * | 2015-04-22 | 2022-07-12 | Applied Materials, Inc. | Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate |
| US20170092470A1 (en) * | 2015-09-28 | 2017-03-30 | Applied Materials, Inc. | Plasma reactor for processing a workpiece with an array of plasma point sources |
| US10233543B2 (en) * | 2015-10-09 | 2019-03-19 | Applied Materials, Inc. | Showerhead assembly with multiple fluid delivery zones |
| US10087523B2 (en) * | 2016-05-20 | 2018-10-02 | Lam Research Corporation | Vapor delivery method and apparatus for solid and liquid precursors |
| US10403476B2 (en) * | 2016-11-09 | 2019-09-03 | Lam Research Corporation | Active showerhead |
| CN112534557B (zh) * | 2018-08-22 | 2025-02-25 | 应用材料公司 | 高密度等离子体增强化学气相沉积腔室 |
-
2019
- 2019-12-17 KR KR1020227023984A patent/KR102776470B1/ko active Active
- 2019-12-17 CN CN201980102887.6A patent/CN114787415B/zh active Active
- 2019-12-17 JP JP2022536555A patent/JP7550859B2/ja active Active
- 2019-12-17 WO PCT/US2019/066929 patent/WO2021126172A1/en not_active Ceased
-
2020
- 2020-11-06 TW TW109138750A patent/TWI899112B/zh active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006073354A (ja) | 2004-09-02 | 2006-03-16 | Matsushita Electric Ind Co Ltd | プラズマ処理装置 |
| JP2009246129A (ja) | 2008-03-31 | 2009-10-22 | Tokyo Electron Ltd | プラズマcvd窒化珪素膜の成膜方法及び半導体集積回路装置の製造方法 |
| JP2011035201A (ja) | 2009-08-03 | 2011-02-17 | Sumitomo Electric Ind Ltd | 気相処理装置、気相処理方法および基板 |
| JP2015230988A (ja) | 2014-06-05 | 2015-12-21 | 東京エレクトロン株式会社 | プラズマ処理装置およびクリーニング方法 |
| US20170178867A1 (en) | 2015-12-18 | 2017-06-22 | Applied Materials, Inc. | Gas diffuser having grooved hollow cathodes |
| JP2019501291A (ja) | 2015-12-18 | 2019-01-17 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 溝付き中空カソードを有するガスディフューザー |
| JP2018088336A (ja) | 2016-11-28 | 2018-06-07 | 東京エレクトロン株式会社 | プラズマ処理装置及びシャワーヘッド |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2023507111A (ja) | 2023-02-21 |
| KR102776470B1 (ko) | 2025-03-04 |
| TW202136569A (zh) | 2021-10-01 |
| TWI899112B (zh) | 2025-10-01 |
| CN114787415A (zh) | 2022-07-22 |
| WO2021126172A1 (en) | 2021-06-24 |
| CN114787415B (zh) | 2024-09-13 |
| KR20220114044A (ko) | 2022-08-17 |
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