JP7777937B2 - 被加工物の加工方法 - Google Patents
被加工物の加工方法Info
- Publication number
- JP7777937B2 JP7777937B2 JP2021123715A JP2021123715A JP7777937B2 JP 7777937 B2 JP7777937 B2 JP 7777937B2 JP 2021123715 A JP2021123715 A JP 2021123715A JP 2021123715 A JP2021123715 A JP 2021123715A JP 7777937 B2 JP7777937 B2 JP 7777937B2
- Authority
- JP
- Japan
- Prior art keywords
- workpiece
- frame
- sheet
- thermocompression
- thermocompression sheet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P54/00—Cutting or separating of wafers, substrates or parts of devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
- B23K20/023—Thermo-compression bonding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/42—Printed circuits
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/30—Organic materials
- B23K2103/42—Plastics other than composite materials
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Lining Or Joining Of Plastics Or The Like (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Dicing (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Description
本発明の第一実施形態について、図面に基づいて説明する。図1は、第一実施形態に係る被加工物10の加工方法の加工対象である被加工物10の一例を示す斜視図である。被加工物10は、シリコン(Si)、サファイア(Al2O3)、ヒ化ガリウム(GaAs)又は炭化ケイ素(SiC)等を基板11とする円板状の半導体ウェーハ、又は光デバイスウェーハ等のウェーハである。
本発明の第二実施形態について、図面に基づいて説明する。図6は、第二実施形態に係る被加工物10の加工方法において、一体化ステップ1の流れを示すフローチャート図である。第二実施形態の被加工物10の加工方法において、一体化ステップ1は、フレーム固定ステップ1-1と、被加工物固定ステップ1-2と、を備える。
20 フレーム
21 開口
30 熱圧着シート
40、80 ヒートテーブル
50 ヒートローラ
Claims (2)
- 被加工物の加工方法であって、
被加工物を収容する開口を有するフレームと該開口に収容された被加工物とに熱圧着シートを加熱して圧着し、該フレームと該被加工物とを該熱圧着シートを介して一体化する一体化ステップと、
該熱圧着シートで該フレームと一体化された該被加工物を加工する加工ステップと、
を備え、
該一体化ステップでは、該被加工物が該熱圧着シートの一方の面に、該フレームが該熱圧着シートの他方の面に、それぞれ固定され、熱源を備えるヒートテーブルで加熱される該フレームに、熱源を備えるヒートローラで該熱圧着シートを加熱しながら押圧することによって、該熱圧着シートを該フレームに固定し、
該熱圧着シートは、該被加工物と該フレームとが貼着される領域に粘着層が無いことを特徴とする、被加工物の加工方法。 - 該一体化ステップは、
該被加工物を該熱圧着シートの該一方の面に固定する被加工物固定ステップと、
該フレームを該熱圧着シートの該他方の面に固定するフレーム固定ステップと、
を備えることを特徴とする、請求項1に記載の被加工物の加工方法。
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021123715A JP7777937B2 (ja) | 2021-07-28 | 2021-07-28 | 被加工物の加工方法 |
| KR1020220080632A KR20230017721A (ko) | 2021-07-28 | 2022-06-30 | 피가공물의 가공 방법 |
| US17/811,971 US11865634B2 (en) | 2021-07-28 | 2022-07-12 | Processing method of workpiece |
| CN202210818574.4A CN115692245A (zh) | 2021-07-28 | 2022-07-13 | 被加工物的加工方法 |
| DE102022207479.3A DE102022207479A1 (de) | 2021-07-28 | 2022-07-21 | Bearbeitungsverfahren für ein werkstück |
| TW111127800A TWI916599B (zh) | 2021-07-28 | 2022-07-25 | 被加工物的加工方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021123715A JP7777937B2 (ja) | 2021-07-28 | 2021-07-28 | 被加工物の加工方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2023019193A JP2023019193A (ja) | 2023-02-09 |
| JP7777937B2 true JP7777937B2 (ja) | 2025-12-01 |
Family
ID=84890214
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021123715A Active JP7777937B2 (ja) | 2021-07-28 | 2021-07-28 | 被加工物の加工方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US11865634B2 (ja) |
| JP (1) | JP7777937B2 (ja) |
| KR (1) | KR20230017721A (ja) |
| CN (1) | CN115692245A (ja) |
| DE (1) | DE102022207479A1 (ja) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004200572A (ja) | 2002-12-20 | 2004-07-15 | Disco Abrasive Syst Ltd | 不要半導体片の除去方法および装置 |
| JP2014107338A (ja) | 2012-11-26 | 2014-06-09 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JP2019201049A (ja) | 2018-05-14 | 2019-11-21 | 株式会社ディスコ | ウェーハの加工方法 |
| JP2021034492A (ja) | 2019-08-21 | 2021-03-01 | 株式会社ディスコ | 環状フレーム |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3670396A (en) * | 1971-04-12 | 1972-06-20 | Us Navy | Method of making a circuit assembly |
| WO2008004615A1 (fr) * | 2006-07-07 | 2008-01-10 | Mitsubishi Gas Chemical Company, Inc. | Résine polyimide |
| WO2008010514A1 (en) * | 2006-07-20 | 2008-01-24 | Mitsubishi Gas Chemical Company, Inc. | Thermocurable polyimide resin composition |
| JP4436843B2 (ja) * | 2007-02-07 | 2010-03-24 | 株式会社日立製作所 | 電力変換装置 |
| WO2010109848A1 (ja) * | 2009-03-26 | 2010-09-30 | パナソニック株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| JP7201342B2 (ja) * | 2018-06-06 | 2023-01-10 | 株式会社ディスコ | ウエーハの加工方法 |
| JP2019212812A (ja) * | 2018-06-06 | 2019-12-12 | 株式会社ディスコ | ウェーハの加工方法 |
| JP7143019B2 (ja) * | 2018-06-06 | 2022-09-28 | 株式会社ディスコ | ウェーハの加工方法 |
| JP7154686B2 (ja) * | 2018-06-06 | 2022-10-18 | 株式会社ディスコ | ウェーハの加工方法 |
| JP2019220550A (ja) * | 2018-06-19 | 2019-12-26 | 株式会社ディスコ | ウエーハの加工方法 |
| JP7049941B2 (ja) * | 2018-06-22 | 2022-04-07 | 株式会社ディスコ | ウエーハの加工方法 |
| JP7139047B2 (ja) * | 2018-07-06 | 2022-09-20 | 株式会社ディスコ | ウェーハの加工方法 |
| JP7139048B2 (ja) * | 2018-07-06 | 2022-09-20 | 株式会社ディスコ | ウェーハの加工方法 |
| JP7181020B2 (ja) * | 2018-07-26 | 2022-11-30 | 株式会社ディスコ | ウエーハの加工方法 |
| JP7143023B2 (ja) * | 2018-08-06 | 2022-09-28 | 株式会社ディスコ | ウェーハの加工方法 |
| JP7191458B2 (ja) * | 2018-08-06 | 2022-12-19 | 株式会社ディスコ | ウェーハの加工方法 |
| JP7191586B2 (ja) * | 2018-08-17 | 2022-12-19 | 株式会社ディスコ | ウエーハの一体化方法 |
| JP2020035910A (ja) * | 2018-08-30 | 2020-03-05 | 東芝ホクト電子株式会社 | 発光装置及び発光装置の製造方法 |
| JP7246825B2 (ja) * | 2018-12-06 | 2023-03-28 | 株式会社ディスコ | ウェーハの加工方法 |
| JP7224719B2 (ja) * | 2019-01-17 | 2023-02-20 | 株式会社ディスコ | ウェーハの加工方法 |
-
2021
- 2021-07-28 JP JP2021123715A patent/JP7777937B2/ja active Active
-
2022
- 2022-06-30 KR KR1020220080632A patent/KR20230017721A/ko active Pending
- 2022-07-12 US US17/811,971 patent/US11865634B2/en active Active
- 2022-07-13 CN CN202210818574.4A patent/CN115692245A/zh active Pending
- 2022-07-21 DE DE102022207479.3A patent/DE102022207479A1/de active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004200572A (ja) | 2002-12-20 | 2004-07-15 | Disco Abrasive Syst Ltd | 不要半導体片の除去方法および装置 |
| JP2014107338A (ja) | 2012-11-26 | 2014-06-09 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JP2019201049A (ja) | 2018-05-14 | 2019-11-21 | 株式会社ディスコ | ウェーハの加工方法 |
| JP2021034492A (ja) | 2019-08-21 | 2021-03-01 | 株式会社ディスコ | 環状フレーム |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102022207479A1 (de) | 2023-02-02 |
| CN115692245A (zh) | 2023-02-03 |
| KR20230017721A (ko) | 2023-02-06 |
| TW202305908A (zh) | 2023-02-01 |
| US20230031772A1 (en) | 2023-02-02 |
| JP2023019193A (ja) | 2023-02-09 |
| US11865634B2 (en) | 2024-01-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102759515B1 (ko) | 웨이퍼의 가공 방법 | |
| US11373888B2 (en) | Protective member forming method and protective member forming apparatus | |
| US10804131B2 (en) | Carrier plate removing method | |
| KR102752951B1 (ko) | 웨이퍼의 가공 방법 | |
| JP7146354B2 (ja) | キャリア板の除去方法 | |
| KR102670600B1 (ko) | 박리 방법 | |
| KR102733730B1 (ko) | 웨이퍼의 가공 방법 | |
| JP7777937B2 (ja) | 被加工物の加工方法 | |
| KR102734775B1 (ko) | 웨이퍼의 가공 방법 | |
| JP7303704B2 (ja) | ウェーハの分割方法 | |
| TWI916599B (zh) | 被加工物的加工方法 | |
| JP7451028B2 (ja) | 保護シートの配設方法 | |
| CN112435950B (zh) | 载体板的去除方法 | |
| JP7262903B2 (ja) | キャリア板の除去方法 | |
| US12598953B2 (en) | Protective member forming apparatus and method of forming protective member | |
| JP2024106774A (ja) | 保護シート配設方法および保護シート | |
| CN113964074B (zh) | 载体板的去除方法 | |
| JP2024178779A (ja) | キャリア板の除去方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20240524 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20250311 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20250228 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20250512 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20250819 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20251016 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20251028 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20251118 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7777937 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |