JPH01100064A - Production of silicon nitride sintered compact - Google Patents
Production of silicon nitride sintered compactInfo
- Publication number
- JPH01100064A JPH01100064A JP62256324A JP25632487A JPH01100064A JP H01100064 A JPH01100064 A JP H01100064A JP 62256324 A JP62256324 A JP 62256324A JP 25632487 A JP25632487 A JP 25632487A JP H01100064 A JPH01100064 A JP H01100064A
- Authority
- JP
- Japan
- Prior art keywords
- powder
- sintered body
- temperature
- silicon nitride
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Products (AREA)
Abstract
Description
(産業上の利用分野)
この発明は、自動車1機械装置、化学装置、宇宙航空機
器などの幅広い分野において使用される各種構造部品の
素材として利用でき、特に優れた高温強度を有するファ
インセラミックス材料を得るのに好適な窒化珪素質焼結
体の製造方法に関するものである。
(従来の技術)
窒化珪素を主成分とする焼結体は、常温および高温で化
学的に安定であり、高い機械的強度を有するため、軸受
なとの摺動部材、ターボチャージャロータなどのエンジ
ン部材として好適な材料である。
しかし、窒化珪素は単独では焼結が困難なため、通常の
場合、MgO,A1203.Y2O3などの焼結助剤を
添加して焼結を行う方法が用いられている。また、焼結
体中に残留するガラス相の量の低下をはかるためにホッ
トプレスにより作成する方法やSi粉末にY2O3を添
加した混合物を窒化後焼成する方法が知られている(窒
化珪素質焼結体の製造方法としては、特開昭54−15
916号、特開昭49−63710号、特開昭60−1
37873号などに開示された多くのものがある。)。
(発明が解決しようとする問題点)
しかしながら、上述する窒化珪素を出発原料とする従来
の焼成方法においては、焼結は焼成時に生ずる液相を媒
介とした液相焼結によると考えられており、この液相は
焼結後にガラス相として焼結体中に残留する。一方、焼
結体の耐クリープ特性、高温強度、耐酸化性などの高温
特性については、焼結体中に残留するガラス相に大きく
影響を受ける。そして、特に、軟化温度の低いガラス相
が多く存在すると、窒化珪素質焼結体の高温機械特性を
著しく低下させるので好ましくないという問題点があっ
た。
また、ホットプレスによる方法では、焼結性に優れ緻密
な焼結体が得られるものの、単純形状の製品にしか適用
できないという問題点があった。
さらに、上述する窒化後焼成する方法では、高温強度の
改善はみられるものの、常温における機械的強度が十分
とはいえなかった。これは、高融点の焼結助剤であるY
2O3を単独で添加したため、焼結性が十分でなかった
ためである。
(発明の目的)
この発明は、上述した従来の問題点に着目してなされた
もので、特に常温における強度に優れ、高温における強
度低下が少ない窒化珪素質焼結体を生産する方法を開発
し、上記した従来の問題点を解決することを目的として
いるものである。(Field of Industrial Application) This invention is a fine ceramic material that can be used as a material for various structural parts used in a wide range of fields such as automobile machinery, chemical equipment, and aerospace equipment, and has particularly excellent high-temperature strength. The present invention relates to a method for producing a silicon nitride sintered body suitable for obtaining. (Prior art) Sintered bodies mainly composed of silicon nitride are chemically stable at room and high temperatures and have high mechanical strength, so they are used in sliding parts such as bearings and engines such as turbocharger rotors. This material is suitable for use as a member. However, since it is difficult to sinter silicon nitride alone, MgO, A1203. A method is used in which sintering is performed by adding a sintering aid such as Y2O3. In addition, in order to reduce the amount of glass phase remaining in the sintered body, a method of creating it by hot pressing and a method of firing a mixture of Si powder and Y2O3 after nitriding are known (silicon nitride sintering). The method for producing the solid body is described in Japanese Patent Application Laid-open No. 54-15
No. 916, JP-A-49-63710, JP-A-60-1
There are many examples disclosed in No. 37873 and others. ). (Problems to be Solved by the Invention) However, in the conventional firing method using silicon nitride as a starting material mentioned above, sintering is thought to be liquid phase sintering mediated by the liquid phase generated during firing. , this liquid phase remains in the sintered body as a glass phase after sintering. On the other hand, high-temperature properties such as creep resistance, high-temperature strength, and oxidation resistance of a sintered body are greatly influenced by the glass phase remaining in the sintered body. In particular, the presence of a large amount of glass phase with a low softening temperature is undesirable because it significantly deteriorates the high-temperature mechanical properties of the silicon nitride sintered body. Further, although the method using hot pressing can produce a dense sintered body with excellent sinterability, it has the problem that it can only be applied to products with simple shapes. Furthermore, in the above-mentioned method of firing after nitriding, although an improvement in high temperature strength was observed, the mechanical strength at room temperature was not sufficient. This is Y, which is a high melting point sintering aid.
This is because sinterability was not sufficient because 2O3 was added alone. (Purpose of the Invention) This invention has been made by focusing on the above-mentioned conventional problems, and has developed a method for producing a silicon nitride sintered body that has particularly excellent strength at room temperature and less decrease in strength at high temperatures. , which aims to solve the above-mentioned conventional problems.
(問題点を解決するための手段)
この発明に係る窒化珪素質焼結体の製造方法は、
珪素粉末および窒化珪素粉末のうち少なくとも珪素粉末
と、
Nd203 、Sm203のうちから選ばれた1種ま
たは2種とY2O3との組合わせからなりかっ次式:
%式%(1)
(ただし1MはNd 、Smのうちから選ばれた1種ま
たは2種であって、0.1≦X≦0.9(モル比)を表
す、)の割合の酸化物および/または熱処理後に前記割
合の酸化物となる化合物と、の混合体から成形して得た
成形体を窒素雰囲気下−T!1000〜1500℃の範
囲の温度で熱処理し、次いで1気圧以上の窒素雰囲気下
で1600〜2200℃の範囲の温度で熱処理する製造
工程を経ることにより、上記した従来の問題点を解決し
たものである。
この発明に係る窒化珪素質焼結体の製造方法では、珪素
粉末および窒化珪素粉末のうち少なくとも珪素粉末と、
酸化物助剤とを出発原料とする。
そして、珪素粉末と、必要に応じて珪素粉末に置換して
用いる窒化珪素粉末と、酸化物助剤との混合粉末を適宜
の手法により成形して得られた成形体を窒素雰囲気下で
1000℃から1500℃の範囲の温度で加熱処理する
ことにより、珪素は窒化されて窒化珪素と酸化物助剤と
の混合物が生成する。この混合物のかさ密度は理論密度
の約70%程度であり、通常の窒化珪素の製造方法であ
る窒化珪素粉末と酸化物との圧粉体のかさ密度(60%
以下)より高い、このため第2の処理工程である160
0℃から2200℃の焼成工程で収縮する量が少なくて
すみ1通常の方法より低温で焼成が可能である。
この発明で焼結助剤として用いられるY2O3は融点が
高いため、単独の成分では通常の常圧焼結またはガス圧
焼結の温度(1600℃以上2200℃以下)の範囲で
は十分な量の低粘度の液相が生成しないため焼結性が悪
く、従来はホットプレスなどの外から圧力を加える場合
に多く用いられてきた。そこで、この発明においては。
Y2O3と、Nd203 、Sm203のうちの1種
または2種とを添加した酸化物を使用することにより、
焼結温度1600℃以上2200℃以下において焼結に
十分な量の液相が得られるまでに酸化物の融点を低下さ
せたものである。しかもこの液相は、従来のMgO,A
文2 o3−Y2O3などを助剤として利用した場合の
液相に比べて融点が高いため、焼結後に焼結体中に残留
しても、高温において強度が低下することが少ないもの
と考えられる。
この発明において、原料粉末は、珪素粉末と。
必要に応じて前記珪素粉末に一部置換して用いられる窒
化珪素粉末と、さらにはY2O3とNd203 、Sm
203のうちから選ばれた1種または2種とを組合わせ
た酸化物粉末と、からなる混合粉末を用いる。これらの
うち、珪素粉末の一部を窒化珪素粉末に置換するとして
も、珪素粉末は3重量%以上、さらに好ましくは30重
量%以上となるようにすることが望ましい、これは、珪
素の窒化による密度の上昇効果が十分に得られるように
するためである。また、焼結助剤であるY2O3と、N
d2O3および/またはSm2O3とは、いずれも微細
な粉末であるものがより好ましいが、これらの水酸化物
、炭酸塩など熱処理によって酸化物を生成する化合物を
用いた混合体を原料とするものであってもよい。
焼結助剤は、Y2O3とNd2O3を使用する場合、(
Y O) (Nd O) (前記23X
231−X
(1)式参照)で、0.1≦X≦0.9(モル比)の範
囲で焼結が可能である。また、Y2O3とSm2O3を
使用する場合、(Y2O3)x(Sm O)
(前記(1)式参照)で。
2 3 1−X
0.1≦X≦0.9(モル比)の範囲で焼結が可能であ
る。このとき、!<0.1では、焼結体の強度が低下す
るので好ましくなく、x>0.9では1600℃以上の
焼成において充分な量の液相が生成せず、ち密化しない
ので好ましくない、添加する焼結助剤の量は、種類およ
び組成によって最適範囲は異なるが、最終焼結体中の含
有量3〜20重量%とすることによって゛、より一層密
度および強度は向上する。しかし、ち密化に必要な量以
上に助剤を添加すると高温での強度を低下させる。
これらの混合体の成形方法については特に限定しないが
、例えば、金型プレス成形、ラバープレ/
ス成形、射出成形など通常のセラミックスの成形方法を
、目的とする製品の形状に合わせて選択することができ
る。
この発明に係る窒化珪素質焼結体の製造方法において採
用される熱処理は、窒化工程と焼結工程の2段に分けて
行われる。これらのうち。
窒化工程は、窒素雰囲気中で、1000℃〜1500℃
の範囲の温度で、望ましくは1200℃〜1450℃の
範囲の温度で行う、窒素雰囲気は窒素含有ガス1気圧の
条件で行うことができるが、アンモニアガス中で行って
もよく、この発明における窒素雰囲気の定義に含まれる
。また、必要に応じて水素ガス、不活性ガスを添加した
雰囲気とすることもこの発明における窒素雰囲気の定義
に含まれる。この窒素雰囲気におけるガス圧力は通常は
1気圧であるが1気圧を超える高圧のガス中で行っても
よく、高圧の窒素雰囲気中では窒化が促進されるため厚
肉形状の部品の窒化には有効である。
次に、焼結工程は、1気圧以上の窒素雰囲気中で160
0℃〜2200℃の範囲の温度で行う。
このとき、窒素雰囲気の圧力が1気圧よりも低いと窒化
珪素の分解が激しく、緻密な焼結体が得られない、この
場合、窒化珪素の分解を抑えるのに必要なガス圧力は焼
成温度によって決まり、高温はど高い圧力が必要となる
。また、焼成温度が1600℃よりも低いと十分な量の
液相が生成しないためち密化せず、2200℃を超える
と粒成長が激しくなるため強度が低下するので、160
0℃以上2200℃以下の範囲で行う。
この焼結処理は緻密な焼結体が得られるまで行う。
上述する添加助剤の量が少ない場合、高融履助剤を使用
する場合など、焼結性が悪い場合は、焼成工程は次の2
工程により行うのがよい。
先ず、窒化処理した成形体を1気圧以上500気圧未満
の窒素雰囲気下で1600℃から2200℃の範囲の温
度で処理する。この処理時間は10分以上が好ましい、
この工程で、酸化物系助剤が液相を発生し、液相焼結の
機構で焼結が進行する。
このとき、雰囲気を窒素雰囲気下で1気圧以上500気
圧未満とするのは、1気圧未満では窒化珪素が分解しち
密化しなくなり、500気圧以上では焼結体中に高圧の
窒素ガスが閉じ込められるため理論密度の90%程度ま
でしかち密化しないためである。この工程で理論密度の
90%以上の焼結体が得られる0次に、このように処理
した焼結体を、さらに500気圧以上の窒素雰囲気下で
1600℃以上2200℃以下の範囲の温度で処理する
。この工程では通常のHIP処理と同様のメカニズムで
残された閉気孔が消滅し、ち密な焼結体が得られる。こ
の2つの工程で処理温度を1600℃から2200℃と
するのは、1600℃未満では液相の量が少ないため、
ち密化が進行せず、2200℃超過では粒成長が起り、
常温および高温の強度が低下するためである。これらの
処理工程は温度および圧力をコントロールすることによ
り1回の処理で行うことが望ましいが、2つの工程に分
けて行ってもよい。
(実施例)
以下、この発明の実施例を比較例とともに示すが、実施
例1〜7および比較例1.2の結果を第1表に、また実
施例8〜17および比較例3〜5の結果を第2表に、そ
れぞれまとめて示す。
夫凰勇」
Si3N4に換算して90重量%のSi粉末と5重量%
の酸化イツトリウムおよび5重量%の酸化ネオジム(N
d203 / (Y203 +Nd203 )”0.4
0モル比)とを、エタノールを添加した湿式ボールミル
により混合して混合粉末を得た。このとき、Si3N、
に換算したSi粉末の量とは、
3S i +2N2 =S i3 N4 ・・・(
2)の反応により、重量変化するものとして計算して添
加した。この混合粉末20MPaの圧力で金型成形した
後、200MPaの圧力でラバープレス成形して6X6
X50mmの形状の成形体を成形した。この成形体を第
1図に示す窒化処理スケジュールにより窒素雰囲気下で
加熱して窒化した0次いで、10気圧の窒素ガス圧下で
1850℃の温度で1時間加熱して、密度3.45g/
cm’の焼結体を得た。
ここで得られた焼結体を3 X 4 X 40 m m
の形状にダイヤモンドホイールで研削加工し、室温およ
び1350℃で、スパン30mmの3点曲げ試験を行っ
た。その結果、5木の平均値は室温で800MPa、1
350℃で550MPaと高強度の焼結体が得られた。
ル敷亘ユ
Si3N4に換算して90重量%の31粉末と5重量%
の酸化イツトリウムおよび5重量%の酸化アルミニウム
とを、エタノールを添加した湿式ボールミルにより混合
して混合粉末を得た。この混合粉末を20 M P a
の力で金型成形した後、200 M P aの圧力でラ
バープレス成形して6X6X50mmの形状の成形体を
成形した。この成形体を第1図に示す窒化処理スケジュ
ールにより窒素雰囲気下で加熱して窒化した0次いで、
10気圧の窒素ガス圧下で1850℃の温度で1時間加
熱して、密度3.18g/cm3の焼結体を得た。
ここで得られた焼結体を3X4X40mmの形状にダイ
ヤモンドホイールで研削加工し、室温および1350℃
で、スパン30mmの3点曲げ試験を行った。その結果
、5本の平均値は室温で900MPa、1350℃で1
20MPaであり、この焼結体は、常温では高強度であ
るが、高温では強度が著しく低下した。
塩艶■ヱ
Si3N4に換算して90重量%のSi粉末と10重量
%の酸化イツトリウムを、エタノールを添加した湿式ボ
ールミルにより混合して混合粉末を得た。この混合粉末
を20 M P aの圧力で金型成形した後、200M
Paの圧力でラバープレス成形して6X6X50mmの
形状の成形体を成形した。この成形体を第1図に示す窒
化処理スケジュールにより窒素雰囲気下で加熱して窒化
した0次いで、10気圧の窒素ガス圧下で1850℃の
温度で1時間加熱したところ、密度は2.80g/cm
3と十分にち密化しなかった。
ここで得られた焼結体を3X4X40mmの形状にダイ
ヤモンドホイールで研削加工し、室温および1350℃
で、スパン30mmの3点曲げ試験を行った。5本の平
均値は室温で320Mpa、1350℃で250MPa
であり、常温および高温において焼結体の強度は低かっ
た。
衷m二j
第1表に示した組成のSi粉末と焼結助剤とを、エタノ
ールを添加した湿式ボールミルにより混合して混合粉末
を得た。この混合粉末を20MPaの圧力で金型成形し
た後、200MPaの圧力でラバープレス成形して6X
6X50mmの形状の成形体を成形した。この成形体を
第1図または第2図に示す窒化処理スケジュールにより
窒素雰囲気下で加熱して窒化した0次いで。
同じく第1表に示す条件で焼成した。このようにして得
られた焼結体の密度を同じく第1表に示す。
ここで得られた焼結体を3X4X40mmの形状にダイ
ヤモンドホイールで研削加工し、室温および1350℃
で、スパン30mmの3点曲げ試験を行った。室温強度
および高温強度の5本の平均値を同じく第1表に示す、
第1表に示すように、得られた焼結体は室温および高温
において高強度であった。
害m旦
Si3N4に換算して94重量%のSi粉末と3重量%
の酸化イツトリウムおよび3重量%の酸化サマリウム(
Sm20s / (Y203+Sm2O3)=0.39
モル比)とを、エタノールを添加した湿式ボールミルに
より混合して混合粉末を得た。この混合粉末を20MP
aの圧力で金型成形した後、200MPaの圧力でラバ
ープレス成形して6X6X50mmの形状の成形体を成
形した。この成形体を第2図に示す窒化処理スケジュー
ルにより窒素雰囲気下で加熱して窒化した0次いで、第
3図に示す条件で焼成したところ、密度は3 、46
g / c m 3と十分にち密化した。
ここで得られた焼結体を3X4X40mmの形状にダイ
ヤモンドホイールで研削加工し、室温および1350℃
で、スパン30mmの3点曲げ試験を行った。その結果
、5本の平均値は室温で850MPa、1350℃で6
20MPaであり、得られた焼結体は室温および高温に
おいて高強度であった。
害】u1ヱ
5i3Naに換算して94重量%のSi粉末と3重量%
の酸化イツトリウムおよび3重量%の酸化ネオジム(N
dz O+s / (Y203+Nd203)=0.
40モル比)とを、エタノールを添加した湿式ボールミ
ルにより混合して混合粉末を得た。この混合粉末を20
MPaの圧力で金型成形した後、200 M P aの
圧力でラバープレス成形して8X6X50mmの形状の
成形体を成形した。この成形体を第4図に示すスケジュ
ールにより窒素雰囲気下で加熱して窒化処理および焼結
処理を行ったところ、密度は3.48g/Cm3と十分
にち密化した。
ここで、得られた焼結体を3X4X40mmの形状にダ
イヤモンドホイールで研削加工し、室温および1350
℃で、スパン30mmの3点曲げ試験を行った。5木の
平均値は室温で900MPa、1350℃で650MP
aであり、得られた焼結体は室温および高温において高
強度であった。
匿凰亘l
Si3N4に、47.5重量%のSi粉末と2.5重量
%の酸化イツトリウムおよび2.5重量%の酸化ネオジ
ムとを、エタノールを添加した湿式ボールミルにより混
合して混合粉末を得た。
この混合粉末を20MPaの圧力で金型成形した後、2
00MP aの圧力でラバープレス成形して6X6X5
0mmの形状の成形体を成形した。この成形体を第1図
に示す窒化処理スケジュールにより窒素雰囲気下で加熱
して窒化した0次いで、10気圧の窒素ガス圧下で18
50℃の温度で1時間加熱して、密度3.25g/cm
3の焼結体を得た。
ここで得られた焼結体を3X4X40mmの形状にダイ
ヤモンドホイールで研削加工し、室温および1350℃
で、スパン30’mmの3点曲げ試験を行った。5本の
平均値は室温で850MPa、1350℃で680MP
aと高強度の焼結体が得られた。
塩敷■ユ
Si3Nmに、2.5重量%の酸化イツトリウムおよび
2.5重量%の酸化ネオジムを、エタノールを添加した
湿式ボールミルにより混合して混合粉末を得た。この混
合粉末を20MPaの圧力で金型成形した後、200M
Paの圧力でラバープレス成形して6X6X50mmの
形状の成形体を成形した。この成形体を第1図に示す窒
化処理スケジュールにより窒素雰囲気下で加熱して窒化
した0次いで、10気圧の窒素ガス圧下で1850℃の
温度で1時間加熱したところ、密度は2.75g/Cm
3であり、十分に緻密化しなかった。
ここで、得られた焼結体を3X4X40mmの形状にダ
イヤモンドホイールで研削加工し、室温および1350
℃で、スパン30mmの3点曲げ試験を行った。5本の
平均値は室温で320MPa、1350℃で200MP
aであり、室温および高温強度とも低かった。
塩敷l
Si3N4に、45重量%のSi粉末と10重量%の酸
化イツトリムとを、エタノールを添加した湿式ボールミ
ルにより混合して混合粉末を得た。この混合粉末を20
MPaの圧力で金型成形した後、200 M P aの
圧力でラバープレス成形して6X6X50mmの形状の
成形体を成形した、この成形体を第1図に示す窒化処理
スケジュールにより、−素雰囲気下で加熱して窒化した
0次いで、lO気圧の窒素ガス圧下で1850℃の温度
で1時間加熱したところ、密度は2.80g/am’と
十分にはち密化しなかった。
ここで得られた焼結体を3X4X40mmの形状にダイ
ヤモンドホイールで研削加工し、室温および1350℃
で、スパン30mmの3点dlf試験を行った。5本の
平均値は室温で320MPa、1350℃で250MP
aであり、常温および高温において焼結体の強度は低か
った。
塩敷■l
Si3N4に、45重量%のSi粉末と5重量%の酸化
イツトリウムおよび5重量%の酸化アルミニウムとを、
エタノールを添加した湿式ボールミルにより混合して混
合粉末を得た。この混合粉末を20 M P aの圧力
で金型成形した後、200MPaの圧力でラバープレス
成形して6×6×50mmの形状の成形体を成形した。
この成形体を第1図に示す窒化処理スケジュールにより
窒素雰囲気下で加熱して窒化した0次いで、10気圧の
窒素ガス圧下で1850℃の温度で1時間加熱しテ、v
E度3.18g/cm3の焼結体を得た。
ここで得られた焼結体を3X4X40mmの形状のダイ
ヤモンドホイールで研削加工し、室温および1350℃
で、スパン30mmc7)3点曲げ試験を行った。5本
の平均値は室温で900MPa、1350℃で120M
Paであり、この焼結体は、常温では高強度であるが、
高温では強度が著しく低下した。
Xム旌且ニュl
第2表に示した組成の窒化珪素粉末、Si粉末および焼
結助剤を、エタノールを添加した湿式ボールミルにより
混合して混合粉末を得た。この混合粉末を20 M P
aの圧力で金型成形した後、200 M P aの圧
力でラバープレス成形して6X6X50mmの形状の成
形体を成形した。この成形体を第1図および第2図に示
す窒化処理スケジュールにより窒素雰囲気下で加熱して
窒化した0次いで、同じく第2表および第3図に示す条
件で焼成した。得られた焼結体の密度を同じく第2表に
示す。
ここで得られた焼結体を3X4X40mmの形状にダイ
ヤモンドホイールで研削加工し、室温および1350℃
で、スパン30mmの3点曲げ試験を行った。室温強度
および高温強度の5本の平均値を同じく第2表に示す、
得られた焼結体は室温および高温において高強度であっ
た。(Means for Solving the Problems) The method for producing a silicon nitride sintered body according to the present invention includes at least silicon powder selected from among silicon powder and silicon nitride powder, and one selected from Nd203, Sm203, or The following formula is composed of a combination of two types and Y2O3: % Formula % (1) (However, 1M is one or two types selected from Nd and Sm, and 0.1≦X≦0. A molded body obtained by molding a mixture of an oxide with a ratio of 9 (molar ratio) and/or a compound that becomes an oxide with the above ratio after heat treatment in a nitrogen atmosphere -T! The above-mentioned conventional problems have been solved by going through a manufacturing process in which heat treatment is performed at a temperature in the range of 1000 to 1500 °C, and then heat treated at a temperature in the range of 1600 to 2200 °C in a nitrogen atmosphere of 1 atm or more. be. In the method for producing a silicon nitride sintered body according to the present invention, at least silicon powder of silicon powder and silicon nitride powder;
The starting material is an oxide auxiliary agent. Then, a molded body obtained by molding a mixed powder of silicon powder, silicon nitride powder used by replacing silicon powder with silicon powder as necessary, and an oxide auxiliary agent by an appropriate method is heated to 1000° C. under a nitrogen atmosphere. By heat treatment at a temperature in the range from 1500° C. to 1500° C., the silicon is nitrided to form a mixture of silicon nitride and oxide coagent. The bulk density of this mixture is about 70% of the theoretical density, and the bulk density of the compacted powder of silicon nitride powder and oxide (60%
(below) higher than 160, which is why the second processing step
The amount of shrinkage during the firing process from 0°C to 2200°C is small; 1) It is possible to fire at a lower temperature than conventional methods. Y2O3 used as a sintering aid in this invention has a high melting point, so when used as a single component, a sufficient amount of low Since a viscous liquid phase is not generated, the sinterability is poor, and conventionally it has been often used when pressure is applied from outside, such as in a hot press. Therefore, in this invention. By using an oxide containing Y2O3 and one or two of Nd203 and Sm203,
The melting point of the oxide is lowered until a liquid phase sufficient for sintering is obtained at a sintering temperature of 1600° C. or higher and 2200° C. or lower. Moreover, this liquid phase is different from conventional MgO, A
Sentence 2 Since the melting point is higher than that of the liquid phase when o3-Y2O3 is used as an auxiliary agent, it is thought that even if it remains in the sintered body after sintering, the strength will not deteriorate at high temperatures. . In this invention, the raw material powder is silicon powder. Silicon nitride powder, which is used as a partial substitute for the silicon powder as necessary, and Y2O3, Nd203, and Sm
A mixed powder consisting of an oxide powder which is a combination of one or two selected from 203 is used. Even if some of the silicon powder is replaced with silicon nitride powder, it is desirable that the silicon powder be at least 3% by weight, more preferably at least 30% by weight. This is to ensure that the effect of increasing density is sufficiently obtained. In addition, Y2O3, which is a sintering aid, and N
It is more preferable that d2O3 and/or Sm2O3 be in the form of fine powders; You can. When using Y2O3 and Nd2O3 as sintering aids, (
Y O) (Nd O) (Said 23X
231-X (see formula (1)), sintering is possible in the range of 0.1≦X≦0.9 (molar ratio). Also, when using Y2O3 and Sm2O3, (Y2O3) x (Sm O)
(See equation (1) above). Sintering is possible within the range of 2 3 1-X 0.1≦X≦0.9 (molar ratio). At this time,! If x is <0.1, the strength of the sintered body will decrease, which is undesirable. If x>0.9, a sufficient amount of liquid phase will not be generated during firing at 1600°C or higher, and densification will not occur, which is undesirable. The optimal range of the amount of the sintering aid varies depending on the type and composition, but by setting the content in the final sintered body to 3 to 20% by weight, the density and strength are further improved. However, if the auxiliary agent is added in an amount greater than that required for densification, the strength at high temperatures will be reduced. The method for molding these mixtures is not particularly limited, but for example, any conventional ceramic molding method such as mold press molding, rubber press molding, injection molding, etc. can be selected according to the shape of the desired product. can. The heat treatment employed in the method for producing a silicon nitride sintered body according to the present invention is performed in two stages: a nitriding step and a sintering step. Of these. The nitriding process is performed at 1000°C to 1500°C in a nitrogen atmosphere.
The nitrogen atmosphere can be carried out at a temperature in the range of 1,200°C to 1,450°C, preferably in the range of 1 atm of nitrogen-containing gas, but it may also be carried out in ammonia gas. Included in the definition of atmosphere. Furthermore, the definition of nitrogen atmosphere in this invention also includes an atmosphere to which hydrogen gas and inert gas are added as necessary. The gas pressure in this nitrogen atmosphere is usually 1 atm, but it may also be carried out in a high pressure gas exceeding 1 atm. Nitriding is promoted in a high pressure nitrogen atmosphere, so it is effective for nitriding thick-walled parts. It is. Next, the sintering process is performed at 160° C. in a nitrogen atmosphere of 1 atm or more.
It is carried out at temperatures ranging from 0°C to 2200°C. At this time, if the pressure of the nitrogen atmosphere is lower than 1 atm, silicon nitride decomposes violently and a dense sintered body cannot be obtained. In this case, the gas pressure required to suppress the decomposition of silicon nitride depends on the firing temperature. The higher the temperature, the higher the pressure required. In addition, if the firing temperature is lower than 1600°C, a sufficient amount of liquid phase will not be generated and no densification will occur, and if the firing temperature exceeds 2200°C, grain growth will become intense and the strength will decrease.
The temperature is 0°C or higher and 2200°C or lower. This sintering process is continued until a dense sintered body is obtained. If the sintering properties are poor, such as when the amount of the additive auxiliary agent mentioned above is small or when a high-melting auxiliary agent is used, the firing process should be performed in the following two ways.
It is better to do it by process. First, the nitrided molded body is treated in a nitrogen atmosphere of 1 atm or more and less than 500 atm at a temperature in the range of 1600°C to 2200°C. This processing time is preferably 10 minutes or more.
In this step, the oxide-based auxiliary agent generates a liquid phase, and sintering progresses by a liquid phase sintering mechanism. At this time, the reason why the atmosphere is set to 1 atm or more and less than 500 atm in a nitrogen atmosphere is because if it is less than 1 atm, silicon nitride will decompose and will not become dense, and if it is over 500 atm, high pressure nitrogen gas will be trapped in the sintered body. This is because the density is only increased to about 90% of the theoretical density. In this process, a sintered body with a theoretical density of 90% or more is obtained.The sintered body thus treated is further heated at a temperature in the range of 1600°C to 2200°C in a nitrogen atmosphere of 500 atm or more. Process. In this step, the remaining closed pores disappear by a mechanism similar to that of normal HIP processing, and a dense sintered body is obtained. The reason why the treatment temperature is set from 1600°C to 2200°C in these two steps is because the amount of liquid phase is small below 1600°C.
Densification does not progress and grain growth occurs at temperatures exceeding 2200°C.
This is because the strength at room temperature and high temperature decreases. These treatment steps are preferably carried out in one treatment by controlling the temperature and pressure, but may be carried out in two steps. (Example) Examples of the present invention are shown below together with comparative examples. The results of Examples 1 to 7 and Comparative Examples 1.2 are shown in Table 1, and The results are summarized in Table 2. 90% by weight Si powder and 5% by weight in terms of Si3N4
of yttrium oxide and 5% by weight of neodymium oxide (N
d203 / (Y203 +Nd203)”0.4
0 molar ratio) in a wet ball mill to which ethanol was added to obtain a mixed powder. At this time, Si3N,
The amount of Si powder converted to is 3S i +2N2 =S i3 N4...(
It was calculated and added based on the assumption that the weight would change due to the reaction in 2). This mixed powder was molded into a mold at a pressure of 20 MPa, and then rubber press molded at a pressure of 200 MPa to form a 6x6
A molded article having a shape of 50 mm was molded. This molded body was heated and nitrided in a nitrogen atmosphere according to the nitriding treatment schedule shown in Fig. 1.Then, it was heated at a temperature of 1850°C for 1 hour under a nitrogen gas pressure of 10 atm, and the density was 3.45 g/
A sintered body of cm' was obtained. The sintered body obtained here was 3 x 4 x 40 mm
The shape was ground using a diamond wheel, and a three-point bending test with a span of 30 mm was performed at room temperature and 1350°C. As a result, the average value of the five trees was 800 MPa at room temperature, 1
A sintered body with a high strength of 550 MPa at 350° C. was obtained. 90% by weight of 31 powder and 5% by weight in terms of Si3N4
Yttrium oxide and 5% by weight of aluminum oxide were mixed in a wet ball mill to which ethanol was added to obtain a mixed powder. This mixed powder was heated to 20 MPa
After molding with a force of 200 MPa, rubber press molding was performed at a pressure of 200 MPa to form a molded product with a size of 6 x 6 x 50 mm. This molded body was heated and nitrided in a nitrogen atmosphere according to the nitriding schedule shown in Fig. 1.
It was heated at a temperature of 1850° C. for 1 hour under a nitrogen gas pressure of 10 atm to obtain a sintered body having a density of 3.18 g/cm 3 . The sintered body obtained here was ground into a shape of 3 x 4 x 40 mm using a diamond wheel, and then heated at room temperature and 1350°C.
A three-point bending test with a span of 30 mm was conducted. As a result, the average value of the five pieces was 900 MPa at room temperature and 1 at 1350°C.
20 MPa, and although this sintered body had high strength at room temperature, the strength significantly decreased at high temperatures. Salt Glaze 90% by weight of Si powder and 10% by weight of yttrium oxide in terms of Si3N4 were mixed in a wet ball mill to which ethanol was added to obtain a mixed powder. After molding this mixed powder with a mold at a pressure of 20 MPa,
Rubber press molding was carried out under a pressure of Pa to form a molded article having a shape of 6 x 6 x 50 mm. This compact was nitrided by heating in a nitrogen atmosphere according to the nitriding schedule shown in Figure 1.Then, when it was heated at a temperature of 1850°C for 1 hour under a nitrogen gas pressure of 10 atm, the density was 2.80 g/cm.
3, it wasn't dense enough. The sintered body obtained here was ground into a shape of 3 x 4 x 40 mm using a diamond wheel, and then heated at room temperature and 1350°C.
A three-point bending test with a span of 30 mm was conducted. The average value of the five pieces is 320 MPa at room temperature and 250 MPa at 1350°C.
The strength of the sintered body was low at room temperature and high temperature.衷m2j Si powder having the composition shown in Table 1 and a sintering aid were mixed in a wet ball mill to which ethanol was added to obtain a mixed powder. This mixed powder was molded with a mold at a pressure of 20 MPa, and then rubber press molded at a pressure of 200 MPa to form a 6X
A molded article having a shape of 6×50 mm was molded. This compact was nitrided by heating in a nitrogen atmosphere according to the nitriding schedule shown in FIG. 1 or 2. Firing was performed under the same conditions shown in Table 1. The density of the sintered body thus obtained is also shown in Table 1. The sintered body obtained here was ground into a shape of 3 x 4 x 40 mm using a diamond wheel, and then heated at room temperature and 1350°C.
A three-point bending test with a span of 30 mm was conducted. The average values of the room temperature strength and high temperature strength of the five pieces are also shown in Table 1.
As shown in Table 1, the obtained sintered body had high strength at room temperature and high temperature. 94% by weight Si powder and 3% by weight calculated as Si3N4
of yttrium oxide and 3% by weight of samarium oxide (
Sm20s/(Y203+Sm2O3)=0.39
molar ratio) were mixed in a wet ball mill to which ethanol was added to obtain a mixed powder. 20MP of this mixed powder
After molding with a pressure of 1.a, rubber press molding was performed at a pressure of 200 MPa to form a molded product with a size of 6 x 6 x 50 mm. This molded body was heated and nitrided in a nitrogen atmosphere according to the nitriding schedule shown in Fig. 2.Then, when it was fired under the conditions shown in Fig. 3, the density was 3.46.
It was fully densified with g/cm3. The sintered body obtained here was ground into a shape of 3 x 4 x 40 mm using a diamond wheel, and then heated at room temperature and 1350°C.
A three-point bending test with a span of 30 mm was conducted. As a result, the average value of the five pieces was 850 MPa at room temperature and 6
20 MPa, and the obtained sintered body had high strength at room temperature and high temperature. Harm] 94% by weight of Si powder and 3% by weight in terms of u1ヱ5i3Na
of yttrium oxide and 3% by weight of neodymium oxide (N
dz O+s/(Y203+Nd203)=0.
40 molar ratio) using a wet ball mill to which ethanol was added to obtain a mixed powder. 20% of this mixed powder
After molding with a mold at a pressure of MPa, rubber press molding was performed at a pressure of 200 MPa to form a molded article having a shape of 8 x 6 x 50 mm. When this compact was heated in a nitrogen atmosphere and subjected to nitriding and sintering according to the schedule shown in FIG. 4, the compact was sufficiently densified with a density of 3.48 g/Cm3. Here, the obtained sintered body was ground into a shape of 3 x 4 x 40 mm using a diamond wheel, and
A three-point bending test with a span of 30 mm was conducted at . The average value of 5 trees is 900MPa at room temperature and 650MPa at 1350℃
a, and the obtained sintered body had high strength at room temperature and high temperature. A mixed powder was obtained by mixing Si3N4 with 47.5% by weight of Si powder, 2.5% by weight of yttrium oxide, and 2.5% by weight of neodymium oxide using a wet ball mill with the addition of ethanol. Ta. After molding this mixed powder with a mold at a pressure of 20 MPa, 2
Rubber press molded at a pressure of 00MPa to 6X6X5
A molded article having a shape of 0 mm was molded. This compact was nitrided by heating in a nitrogen atmosphere according to the nitriding treatment schedule shown in Figure 1.
Heated at a temperature of 50℃ for 1 hour, density 3.25g/cm
A sintered body of No. 3 was obtained. The sintered body obtained here was ground into a shape of 3 x 4 x 40 mm using a diamond wheel, and then heated at room temperature and 1350°C.
A three-point bending test with a span of 30'mm was conducted. The average value of 5 pieces is 850MPa at room temperature and 680MPa at 1350℃
A high-strength sintered body was obtained. A mixed powder was obtained by mixing 2.5% by weight of yttrium oxide and 2.5% by weight of neodymium oxide with 3Nm of salted Yu-Si using a wet ball mill to which ethanol was added. After molding this mixed powder with a mold at a pressure of 20 MPa, 200 M
Rubber press molding was carried out under a pressure of Pa to form a molded article having a shape of 6 x 6 x 50 mm. This compact was nitrided by heating in a nitrogen atmosphere according to the nitriding schedule shown in Figure 1.Then, when it was heated at a temperature of 1850°C for 1 hour under a nitrogen gas pressure of 10 atm, the density was 2.75 g/Cm.
3, and it was not sufficiently densified. Here, the obtained sintered body was ground into a shape of 3 x 4 x 40 mm using a diamond wheel, and
A three-point bending test with a span of 30 mm was conducted at . The average value of 5 pieces is 320MPa at room temperature and 200MPa at 1350℃
a, and both room temperature and high temperature strength were low. 45% by weight of Si powder and 10% by weight of yttrium oxide were mixed in Si3N4 using a wet ball mill to which ethanol was added to obtain a mixed powder. 20% of this mixed powder
After molding with a pressure of MPa, rubber press molding was performed with a pressure of 200 MPa to form a molded body with a shape of 6 x 6 x 50 mm. This molded body was subjected to a nitriding treatment schedule shown in Fig. 1 in an - elemental atmosphere. The material was then heated at a temperature of 1850° C. for 1 hour under a nitrogen gas pressure of 10 atm, but the density was 2.80 g/am', which was not sufficient to densify the material. The sintered body obtained here was ground into a shape of 3 x 4 x 40 mm using a diamond wheel, and then heated at room temperature and 1350°C.
A three-point dlf test with a span of 30 mm was conducted. The average value of 5 pieces is 320MPa at room temperature and 250MPa at 1350℃
a, and the strength of the sintered body was low at room temperature and high temperature. Salt bed ■l 45% by weight of Si powder, 5% by weight of yttrium oxide and 5% by weight of aluminum oxide are added to Si3N4,
A mixed powder was obtained by mixing in a wet ball mill to which ethanol was added. This mixed powder was molded in a mold at a pressure of 20 MPa, and then rubber press molded at a pressure of 200 MPa to form a molded body having a shape of 6 x 6 x 50 mm. This compact was nitrided by heating in a nitrogen atmosphere according to the nitriding schedule shown in Figure 1.Then, it was heated at a temperature of 1850°C for 1 hour under a nitrogen gas pressure of 10 atm.
A sintered body with an E degree of 3.18 g/cm3 was obtained. The sintered body obtained here was ground with a diamond wheel in the shape of 3 x 4 x 40 mm, and was heated to room temperature and 1350°C.
A three-point bending test was conducted with a span of 30 mm. The average value of 5 pieces is 900MPa at room temperature and 120M at 1350℃
Pa, and this sintered body has high strength at room temperature,
The strength decreased significantly at high temperatures. Silicon nitride powder, Si powder, and sintering aid having the compositions shown in Table 2 were mixed in a wet ball mill to which ethanol was added to obtain a mixed powder. This mixed powder was heated to 20 MPa.
After molding with a mold at a pressure of a, rubber press molding was performed at a pressure of 200 MPa to form a molded product having a shape of 6 x 6 x 50 mm. This compact was heated and nitrided in a nitrogen atmosphere according to the nitriding schedule shown in FIGS. 1 and 2. Then, it was fired under the same conditions shown in Table 2 and FIG. 3. The density of the obtained sintered body is also shown in Table 2. The sintered body obtained here was ground into a shape of 3 x 4 x 40 mm using a diamond wheel, and then heated at room temperature and 1350°C.
A three-point bending test with a span of 30 mm was conducted. The average values of the five pieces of room temperature strength and high temperature strength are also shown in Table 2.
The obtained sintered body had high strength at room temperature and high temperature.
以上説明してきたように、この発明に係る窒化珪素質焼
結体の製造方法によれば、珪素粉末および窒化珪素粉末
のうち少なくとも珪素粉末と。
Nd203 、Sm203のうちから選ばれた1種また
は2種とY2O3との組合わせからなりかつ次式:
%式%)
(ただし1MはNd、Smのうちから選ばれた1種また
は2種であって、0.1≦X≦0.9(モル比)を表す
、)の割合の酸化物および/または熱処理後に前記割合
の酸化物となる化合物と、の混合体から成形して得た成
形体を窒素雰囲気下で1000〜1500℃の範囲の温
度で熱処理し、次いで1気圧以上の窒素雰囲気下で16
00〜2200℃の範囲の温度で熱処理させるようKし
たから、特に常温における強度に優れ、さらには高温に
おける強度低下が著しく少なく、常温のみならず高温に
おいても優れた強度を具備することが要求される各種構
造部品の素材として好適な窒化珪素質焼結体を提供する
ことが可能であるという非常に優れた効果がもたらされ
る。As explained above, according to the method for manufacturing a silicon nitride sintered body according to the present invention, at least silicon powder out of silicon powder and silicon nitride powder. It consists of a combination of one or two selected from Nd203 and Sm203 and Y2O3, and the following formula: % formula %) (However, 1M is one or two selected from Nd and Sm. A molded body obtained by molding a mixture of an oxide with a ratio of 0.1≦X≦0.9 (molar ratio) and/or a compound that becomes an oxide with the above ratio after heat treatment. was heat-treated at a temperature in the range of 1000 to 1500°C under a nitrogen atmosphere, and then heated at a temperature of 16
Because it is heat-treated at a temperature in the range of 00 to 2,200°C, it is required to have excellent strength especially at room temperature, and to have significantly less strength loss at high temperatures, and to have excellent strength not only at room temperature but also at high temperature. This brings about the very excellent effect that it is possible to provide a silicon nitride sintered body suitable as a material for various structural parts.
第1図および第2図はこの発明の実施例および比較例で
採用した窒化処理スケジュールを示すグラフ、第3図は
この発明の実施例で採用した焼成条件を示すグラフ、第
4図はこの発明の実施例で採用した窒化および焼成条件
を示すグラフである。
特許出願人 日産自動車株式会社代理人弁理士
小 塩 豊温良(0C)
圧力(気圧)
iIL(”c)
Nz力“大圧力(fi圧)Figures 1 and 2 are graphs showing nitriding schedules adopted in Examples and Comparative Examples of the present invention, Figure 3 is a graph showing firing conditions adopted in Examples of the invention, and Figure 4 is a graph showing the firing conditions of the invention. 3 is a graph showing nitriding and firing conditions employed in Examples. Patent Applicant Nissan Motor Co., Ltd. Representative Patent Attorney Ryo Koshio Toyoon (0C) Pressure (atmospheric pressure) iIL ("c) Nz force" large pressure (fi pressure)
Claims (1)
素粉末と、 Nd_2O_3,Sm_2O_3のうちから選ばれた1
種または2種とY_2O_3との組合わせからなりかつ
次式: (Y_2O_3)_x(M_2O_3)_1_−_x(
ただし、MはNd,Smのうちから選ばれた1種または
2種であって、0.1≦x≦0.9(モル比)を表す。 )の割合の酸化物および/または熱処理後に前記割合の
酸化物となる化合物と、の混合体から成形して得た成形
体を窒素雰囲気下で1000〜1500℃の範囲の温度
で熱処理し、次いで1気圧以上の窒素雰囲気下で160
0〜2200℃の範囲の温度で熱処理することを特徴と
する窒化珪素質焼結体の製造方法。(1) At least silicon powder among silicon powder and silicon nitride powder, and 1 selected from Nd_2O_3 and Sm_2O_3
It consists of a species or a combination of two species and Y_2O_3 and has the following formula: (Y_2O_3)_x(M_2O_3)_1_-_x(
However, M is one or two selected from Nd and Sm, and represents 0.1≦x≦0.9 (molar ratio). ) and/or a compound that becomes an oxide in the above ratio after heat treatment, a molded body obtained by molding the mixture is heat-treated at a temperature in the range of 1000 to 1500°C in a nitrogen atmosphere, and then 160 in a nitrogen atmosphere of 1 atm or more
A method for producing a silicon nitride sintered body, the method comprising heat treating at a temperature in the range of 0 to 2200°C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62256324A JPH0745345B2 (en) | 1987-10-13 | 1987-10-13 | Method for manufacturing silicon nitride sintered body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62256324A JPH0745345B2 (en) | 1987-10-13 | 1987-10-13 | Method for manufacturing silicon nitride sintered body |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01100064A true JPH01100064A (en) | 1989-04-18 |
| JPH0745345B2 JPH0745345B2 (en) | 1995-05-17 |
Family
ID=17291088
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62256324A Expired - Lifetime JPH0745345B2 (en) | 1987-10-13 | 1987-10-13 | Method for manufacturing silicon nitride sintered body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0745345B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6001759A (en) * | 1997-09-09 | 1999-12-14 | Sumitomo Electric Industries, Ltd. | Silicon nitride sintered body, method of preparing the same and nitrided compact |
-
1987
- 1987-10-13 JP JP62256324A patent/JPH0745345B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6001759A (en) * | 1997-09-09 | 1999-12-14 | Sumitomo Electric Industries, Ltd. | Silicon nitride sintered body, method of preparing the same and nitrided compact |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0745345B2 (en) | 1995-05-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH01100064A (en) | Production of silicon nitride sintered compact | |
| RU2239613C1 (en) | Method of manufacturing silicon nitride-based products | |
| JP2742619B2 (en) | Silicon nitride sintered body | |
| JP3007732B2 (en) | Silicon nitride-mixed oxide sintered body and method for producing the same | |
| JP3124866B2 (en) | Method for producing silicon nitride based sintered body | |
| JPH04214077A (en) | Silicon nitride sintered body and its manufacture | |
| JPS6389462A (en) | Manufacture of silicon nitride base sintered body | |
| JP2980342B2 (en) | Ceramic sintered body | |
| JP2642429B2 (en) | Silicon nitride sintered body and method for producing the same | |
| JP2694368B2 (en) | Method for producing silicon nitride based sintered body | |
| JPH06116045A (en) | Silicon nitride sintered compact and its production | |
| JPH03183660A (en) | Production of silicon nitride sintered body | |
| JPH0733528A (en) | Ceramic composite sintered body, manufacturing method thereof, and semiconductor manufacturing jig using the same | |
| JPH0585823A (en) | Sintered silicon carbide-silicon nitride-mixed oxide and its production | |
| JP3564164B2 (en) | Silicon nitride sintered body and method for producing the same | |
| JP2777051B2 (en) | Method for producing silicon nitride based sintered body | |
| JP2006290709A (en) | Silicon nitride material and manufacturing method thereof | |
| JPH01119563A (en) | Production of silicon nitride-based sintered compact | |
| JPS5951515B2 (en) | Manufacturing method of Sialon sintered body | |
| JP2631102B2 (en) | Method for producing silicon nitride based sintered body | |
| JP2811493B2 (en) | Silicon nitride sintered body | |
| JPS62207769A (en) | Manufacture of silicon nitride sintered body | |
| JPH0416562A (en) | Production of silicon nitride sintered body | |
| KR20230037070A (en) | Composition for manufacturing AlN ceramics including Sc2O3 as sintering aid and the AlN ceramics and the manufacturing method of the same | |
| JPH06293566A (en) | Production of sintered silicon nitride compact |