JPH01100943A - Semiconductor integrated circuit device of masterslice layout - Google Patents

Semiconductor integrated circuit device of masterslice layout

Info

Publication number
JPH01100943A
JPH01100943A JP62259001A JP25900187A JPH01100943A JP H01100943 A JPH01100943 A JP H01100943A JP 62259001 A JP62259001 A JP 62259001A JP 25900187 A JP25900187 A JP 25900187A JP H01100943 A JPH01100943 A JP H01100943A
Authority
JP
Japan
Prior art keywords
circuit section
chip
functional circuit
rom
function circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62259001A
Other languages
Japanese (ja)
Inventor
Isamu Miyagi
宮城 勇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62259001A priority Critical patent/JPH01100943A/en
Publication of JPH01100943A publication Critical patent/JPH01100943A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90Masterslice integrated circuits
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00Marks applied to devices, e.g. for alignment or identification
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00Marks applied to devices, e.g. for alignment or identification
    • H10W46/401Marks applied to devices, e.g. for alignment or identification for identification or tracking
    • H10W46/403Marks applied to devices, e.g. for alignment or identification for identification or tracking for non-wireless electrical read out
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00Marks applied to devices, e.g. for alignment or identification
    • H10W46/601Marks applied to devices, e.g. for alignment or identification for use after dicing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00Marks applied to devices, e.g. for alignment or identification
    • H10W46/601Marks applied to devices, e.g. for alignment or identification for use after dicing
    • H10W46/603Formed on wafers or substrates before dicing and remaining on chips after dicing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/931Shapes of bond pads
    • H10W72/932Plan-view shape, i.e. in top view

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)

Abstract

PURPOSE:To enable chips to be measured automatically form selecting nondefectives and to simplify lot administration, by incorporating an electronic circuit and bonding pads into a chip so that the chip itself can electrically check its own data, for example a name of product, design change history and the like. CONSTITUTION:All types of first function circuit sections 2 having a common substrate are completely identical, including functions of bonding pads 6-9 and lay-out within an IC chip 1, except data stored in an ROM 5. The ROM 5 stores data related to a second function circuit section 3, for example, a name of the IC chip 1 (production number), a revision number, a function name etc., in binary codes serially in the order. of their addresses. If content of the second function circuit section 3 or the number, of type is changed, the data stored in the ROM 5 is also changed simultaneously in the metallizing process. Accordingly, data related to the second function circuit section 3 can be obtained from a counter increment terminal pad 7 in the first function circuit section 2.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はマスタースライス方式の半導体集積回路装置に
関し、特に品種毎に金属配線パターンを変更したマスタ
ースライス方式の半導体集積回路装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a master slice type semiconductor integrated circuit device, and more particularly to a master slice type semiconductor integrated circuit device in which metal wiring patterns are changed for each product type.

〔従来の技術〕[Conventional technology]

従来から、マスタースライス方式の半導体集積回路装置
は、専用品種に比較して開発工期が短く、安価に製造で
きる利点があり、多品種少量生産には適した装置とされ
ている。
Conventionally, master slice type semiconductor integrated circuit devices have the advantage of shortening the development period and being able to be manufactured at low cost compared to dedicated products, and have been considered suitable for high-mix, low-volume production.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかしながら、従来のマスタースライス方式の半導体集
積回路装置は、第一にはチップ内のポンディングパッド
の数やレイアウトが同一であっても一つのウェーハ内に
不規則に複数個の品種を配置した場合、品種が異なれば
ICテスターのテストパターンも変える必要があるため
、ICテスターによるウェーハ内チップの自動測定によ
る良品選別が出来なくなるという問題があり、仮に出来
たとしてもグイシング工程後に品種を分類する工程が必
らず必要になり、生産性が劣るという欠点がある。また
、第二には特定のICパッケージが複数個の品種に共通
に使用される場合、裸眼ではチップの品種区別が不可能
であるため特に品名などの捺印工程ではロフト管理が難
しくなり生産性が劣るという欠点がある。
However, in the conventional master slicing semiconductor integrated circuit device, firstly, even if the number and layout of the bonding pads in the chip are the same, multiple products are arranged irregularly on one wafer. Since the test pattern of the IC tester needs to be changed for different types, there is a problem that it becomes impossible to automatically measure the chips in the wafer using the IC tester to select non-defective products, and even if it were possible, the process of classifying the types after the guising process However, the disadvantage is that productivity is poor. Second, when a specific IC package is used in common for multiple types, it is impossible to distinguish the types of chips with the naked eye, which makes loft management difficult and reduces productivity, especially in the process of stamping product names. It has the disadvantage of being inferior.

本発明の目的は、チップの自動測定による良品選別を実
現し、ロフト管理を簡略化しうるマスタースライス方式
の半導体集積回路装置を提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a master slicing semiconductor integrated circuit device that can select non-defective chips by automatic chip measurement and simplify loft management.

〔問題点を解決するための手段〕[Means for solving problems]

本発明のマスタースライス方式の半導体集積回路装置は
、第一の機能回路部および第二の機能回路部を同一の半
導体モノリシックチップ内に組み込み、第一の機能回路
部に第二の機能回路部を言及する情報を外部に電気的に
取り出せる手段を設けて構成される。
The master slice type semiconductor integrated circuit device of the present invention incorporates a first functional circuit section and a second functional circuit section into the same semiconductor monolithic chip, and a second functional circuit section is installed in the first functional circuit section. It is constructed by providing means for electrically extracting the information to be referred to outside.

すなわち、本発明はチップ自身にチップ自身の情報、例
えば品名、設計変更履歴、等を電気的に調べることが出
来る様に電子回路及びポンディングパッドを内蔵させる
というものである。
That is, the present invention incorporates an electronic circuit and a bonding pad into the chip itself so that information about the chip itself, such as product name, design change history, etc., can be electrically checked.

〔実施例〕〔Example〕

次に、本発明の実施例について図面を参照して説明する
Next, embodiments of the present invention will be described with reference to the drawings.

第1図(a)、(b)はそれぞれ本発明の第一の実施例
を説明するためのICチップの平面図である。
FIGS. 1(a) and 1(b) are plan views of an IC chip for explaining a first embodiment of the present invention, respectively.

第1図(a)に示すように、Tcチップ1は、第一の機
能回路部2と、従来がらのマスタースライス方式の半導
体集積回路装置に相当している第二の機能回路部3と、
第一の機能回路部2および第二の機能回路部3に接続す
るためのパッドから構成される。第一の機能回路部2は
カウンタ回路4およびリードオンリーメモリ(以下、R
OMと称す)5とを備え、このカウンタ回路4はカウン
タインクリメント端子および5桁の出力端子を有し、ま
たROM5は出力端子および5本のアドレス端子を有し
、更にカウンタ回路4の5桁の出力はROM5の5本の
アドレス端子と接続されている。この第一の機能回路部
2の外部に形成されたポンデイグパッド6〜9は第一の
機能回路部2に含まれるカウンタ回路4とROM5との
それぞれ電源、カウンタインクリメント端子、ROM5
の出力、GND電位を外部に引き出すためのポンディン
グパッドであり、また第二の機能回路部3の外部に形成
されたポンディングパッド10は第二の機能回路部3の
各目的に応じた、機能を外部に引き出すためのポンディ
ングパッドである。
As shown in FIG. 1(a), the Tc chip 1 includes a first functional circuit section 2, a second functional circuit section 3 corresponding to a conventional master slice type semiconductor integrated circuit device,
It is composed of pads for connecting to the first functional circuit section 2 and the second functional circuit section 3. The first functional circuit section 2 includes a counter circuit 4 and a read-only memory (hereinafter referred to as R
This counter circuit 4 has a counter increment terminal and a 5-digit output terminal, and the ROM 5 has an output terminal and 5 address terminals. The output is connected to five address terminals of ROM5. The pads 6 to 9 formed outside the first functional circuit section 2 serve as power supplies, counter increment terminals, and counter increment terminals for the counter circuit 4 and ROM 5 included in the first functional circuit section 2, respectively.
It is a bonding pad for drawing out the output and GND potential to the outside, and the bonding pad 10 formed outside the second functional circuit section 3 is used for each purpose of the second functional circuit section 3. It is a padding pad to bring out the function to the outside.

上述した第一の機能回路部2はROM5の記憶情報を除
けば下地を共通とする全ての品種においてポンディング
パッド6〜9の機能およびICチップ1内でのレイアウ
ト等も含めて全く同じものである。また、カウンタ回路
4の出力は電源端子の電位がGND電位から電源電位5
Vに変わるときクリア即ち0となるように回路を組んで
ある。
The above-mentioned first functional circuit section 2 is completely the same, including the functions of the bonding pads 6 to 9 and the layout within the IC chip 1, in all types that share the same substrate, except for the storage information in the ROM 5. be. In addition, the output of the counter circuit 4 is such that the potential of the power supply terminal changes from the GND potential to the power supply potential 5.
The circuit is designed so that when the voltage changes to V, it becomes clear, that is, becomes 0.

更に、ROM5の記憶情報は、例えば1.、、Cチップ
lの品種名(製品番号)、改版番号2機能名など少なく
とも第二の機能回路部3を言及する情報が二進符号でア
ドレス順にシリアルに記憶されている。この第二の機能
回路部3の中身が変わったり、あるいは品種名が変わる
場合、メタライズ工程においてROM5の記憶情報も同
時に変更する。
Furthermore, the storage information of the ROM 5 is, for example, 1. , , Information referring to at least the second functional circuit section 3, such as the type name (product number) of the C chip 1, revision number 2, and function name, is serially stored in binary code in address order. When the contents of the second functional circuit section 3 change or the product name changes, the information stored in the ROM 5 is also changed at the same time in the metallization process.

次に、第1図(b)に示すように、第二の機能回路部2
におけるROM5の情報は次のようにして読み出される
Next, as shown in FIG. 1(b), the second functional circuit section 2
The information in the ROM 5 is read out as follows.

まず、電源パッド6、GND電位パッド9およびカウン
タインクリメント端子パッド7を接地し、しかる後に電
源パッド6に電源電圧5■を印加すればカウンタ4の内
容が0となり、ROM5の0番地の内容が出力パッド8
に出力される。
First, ground the power supply pad 6, GND potential pad 9, and counter increment terminal pad 7, and then apply power supply voltage 5■ to the power supply pad 6, the contents of the counter 4 will become 0, and the contents of address 0 of the ROM 5 will be output. pad 8
is output to.

次に、カウンタインクリメント端子パッド7をGND電
位から電源電圧5vにした後、再びGND電位にもどせ
ばカウンタ4の内容がひとつ増加してlとなり、ROM
5の1番地の内容が出力パッド8に出力される。同様に
して、カウンタインクリメント端子パッド7の電位の上
げ下げを繰り返せば、カウンタの内容が−っづつ31ま
で増加するから、0番地から順番に31番地までROM
5の記憶情報を出力パッド8から読み取ることが出来る
Next, after setting the counter increment terminal pad 7 from the GND potential to the power supply voltage of 5V, and then returning it to the GND potential, the content of the counter 4 increases by one to l, and the ROM
The contents of address 1 of 5 are output to output pad 8. Similarly, if you repeat raising and lowering the potential of the counter increment terminal pad 7, the contents of the counter will increase by - increments up to 31.
5 can be read from the output pad 8.

従って、第一の機能回路部2におけるカウンタインクリ
メント端子パッド7から少なくとも第二の機能回路部3
を言及する情報をえることができるので第二の機能回路
部(品種情報)を知ることが出来る。
Therefore, from the counter increment terminal pad 7 in the first functional circuit section 2 to at least the second functional circuit section 3.
It is possible to obtain information referring to the second functional circuit section (product type information).

第2図(a)、(b)はそれぞれ本発明の第二の実施例
を説明するためのICチップの平面図および信号波形図
である。
FIGS. 2(a) and 2(b) are a plan view of an IC chip and a signal waveform diagram, respectively, for explaining a second embodiment of the present invention.

第2図(a)に示すように、このICチップ1は第1図
(a)に示す第一の機能回路部2における電源パッド6
およびGNDバッド9を取り除き、第一の機能回路部3
を精成するカウンタ4とROM5の電源・GND電位を
外部に引き出すためのボンディングGNDパッド12に
リード配線13を介して接続されている点が前述の第一
の実施例とは異なっている。その他の番号は第一の実施
例の番号と同じであるので説明を省略する。このように
電源パッド11およびGNDパッド12を共有すること
により、第二の実施例は第一の実施例の機能を落とさず
にICチップ1全体のポンディングパッド数を減らすこ
とが出来る利点を有する。
As shown in FIG. 2(a), this IC chip 1 has a power supply pad 6 in the first functional circuit section 2 shown in FIG. 1(a).
and GND pad 9 are removed, and the first functional circuit section 3 is
This embodiment differs from the first embodiment in that it is connected via a lead wire 13 to a bonding GND pad 12 for drawing out the power supply/GND potential of the counter 4 and ROM 5 to the outside. The other numbers are the same as those in the first embodiment, so their explanation will be omitted. By sharing the power supply pad 11 and the GND pad 12 in this way, the second embodiment has the advantage that the number of bonding pads on the entire IC chip 1 can be reduced without degrading the functionality of the first embodiment. .

また、第2図(b)に示すように、第一の機能回路部2
におけるROM5の情報が第一の実施例と同様にして読
み出される。
Further, as shown in FIG. 2(b), the first functional circuit section 2
The information in the ROM 5 is read out in the same manner as in the first embodiment.

第3図は本発明の第三の実施例を説明するためのrcチ
ップ平面図である。
FIG. 3 is a plan view of an rc chip for explaining a third embodiment of the present invention.

第3図に示すように、ICチップ1は第一の機能回路部
2と第二の機能回路部3とを備え、この第一の機能回路
部2は単体で100Ωの抵抗14を9個直列に接続し、
おのおのの抵抗14の両端から10個のタップ15が引
き出されている。この10個のタップ中、4つのタップ
を外部に引き出すためのポンディングパッドがそれぞれ
パッド6〜9である。また、第二の機能回路部3は従来
からのマスタースライス方式の半導体集積回路に相当し
ており、それに接続されるパッド10が第二の機能回路
部3を外部に引き出すためのポンディングパッドである
。前述した第一の機能回路部2における9個の抵抗14
は95〜105Ωの抵抗値になる様マスタースライス方
式の半導体集積回路の下地工程でコントロールしておき
、品種作製工程でポンディングパッド6〜8を10個の
タップのどれに接続するかは品種名(製品番号)。
As shown in FIG. 3, the IC chip 1 includes a first functional circuit section 2 and a second functional circuit section 3, and the first functional circuit section 2 has nine 100Ω resistors 14 connected in series. connect to
Ten taps 15 are drawn out from both ends of each resistor 14. Among these 10 taps, pads 6 to 9 are pads 6 to 9, respectively, for pulling out four taps to the outside. Further, the second functional circuit section 3 corresponds to a conventional master slice type semiconductor integrated circuit, and the pad 10 connected to it is a bonding pad for drawing out the second functional circuit section 3 to the outside. be. The nine resistors 14 in the first functional circuit section 2 described above
is controlled to have a resistance value of 95 to 105 Ω in the base process of the master slice semiconductor integrated circuit, and in the product manufacturing process, which of the 10 taps to connect the bonding pads 6 to 8 to is determined by the product name. (Product No).

改版番号1機能名など少なくとも第二の機能回路部3を
言及する情報が得られる5各ボンデイング、パッド6〜
8とポンディングパッド9間の抵抗値による0本実施例
ではポンディングパッド9は全ての品種に共通で同一の
タップに接続する。
Revision number 1 Information referring to at least the second functional circuit section 3 such as function name can be obtained 5 Each bonding, pad 6 -
In this embodiment, the bonding pad 9 is common to all types and is connected to the same tap.

実際に第二の機能回路部3を言及する情報は次のように
して得られる。
Information actually referring to the second functional circuit section 3 can be obtained as follows.

すなわち、ポンディングパッド9と各ポンデイ□ フグ
パッド6〜8間の抵抗値R6,R7,R8を測定した後
、各々の値を100Ωで割った商にもっとも近い整数を
それぞれL−M−Nとすれば、3桁の整数100L+1
0M+Nが得られる。従って、あらかじめ3桁の整数と
第二の機能回路部3との間に対応関係を持たせておけば
、第一の機能回路部2によって第二の機能回路部3を言
及する情報が得られることが分かる。
That is, after measuring the resistance values R6, R7, and R8 between the pounding pad 9 and each of the pounding pads 6 to 8, divide each value by 100 Ω and take the integer closest to the quotient as L-M-N. For example, 3-digit integer 100L+1
0M+N is obtained. Therefore, by creating a correspondence between a 3-digit integer and the second functional circuit section 3 in advance, information referring to the second functional circuit section 3 can be obtained by the first functional circuit section 2. I understand that.

以上に説明した三つの実施例のマスタースライス方式の
半導体集積回路は、−ウェーハ内にチップの大きさ、ポ
ンディングパッドの数、レイアウト等が同一である複数
個の品種を不規則に配置した場合でも、まずICテスタ
ーで第一の機能回路部によって第二の機能回路部すなわ
ち品種を知り、しかる後に品種に対応したテストパター
ンに変えてICの選別、検査をすることがICテスター
のプログラムによて可能であるため、ICテスターによ
るウェーハ内チップの自動測定による良品選別が可能に
なる。また、グイボンディング後にも同様にして品種を
知ることができることから、ダイシング工程後はもちろ
んマウント、グイボンディング、捺印工程において品種
を分類する必要はまったくない。従って、ウェーハチエ
ツク、組立、捺印1選別、検査などの工程における生産
性が向上する利点がある。
The master slice type semiconductor integrated circuits of the three embodiments described above are: - When multiple types of chips with the same chip size, number of bonding pads, layout, etc. are arranged irregularly within the wafer; However, the IC tester's program requires that the IC tester first learns the second functional circuit section, that is, the product type, from the first functional circuit section, and then changes the test pattern corresponding to the product type to select and test the IC. Therefore, it becomes possible to select non-defective products by automatically measuring chips in a wafer using an IC tester. In addition, since the product type can be determined in the same manner even after the bonding process, there is no need to classify the product type not only after the dicing process but also during the mounting, bonding, and stamping processes. Therefore, there is an advantage that productivity in processes such as wafer checking, assembly, marking 1 sorting, and inspection is improved.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明のマスタースライス方式の
半導体集積回路は、その製造すなわちつェーハ内のチエ
ツク、組立、捺印1選別、検査、などの各工程における
生産性を向上させるという効果がある。
As described above, the master slice type semiconductor integrated circuit of the present invention has the effect of improving productivity in each process of its manufacturing, ie, checking inside the wafer, assembly, marking 1 sorting, and inspection.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図(a)、(b)はそれぞれ本発明の第一の実施例
を説明するためのICチップの平面図および信号波形図
、第2図(a)、(b)はそれぞれ本発明の第二の実施
例を説明するためのICチップの平面図および信号波形
図、第3図は本発明の第三の実施例を説明するためのI
Cチップの平面図である。 1・・・ICチップ、2・・・ICの第一機能回路部、
3・・・ICの第二機能回路部、4・・・カウンタ回路
、5・・・リードオンリーメモリ(ROM) 、6・・
・第一機能回路部の電源パッド、7・・・カウンタイン
クリメント端子パッド、8・・・ROMの出力パッド、
9・・・第一機能回路部のGNDパッド、10・・・第
二機能回路部のパッド、11・・・第二機能回路部の電
源パッド、12・・・第二機能回路部のGNDバッド、
13・・・リード配線、14・・・抵抗、15・・・タ
ップ。
FIGS. 1(a) and (b) are a plan view and a signal waveform diagram of an IC chip for explaining the first embodiment of the present invention, respectively, and FIGS. 2(a) and (b) are respectively A plan view and a signal waveform diagram of an IC chip for explaining the second embodiment, and FIG.
FIG. 3 is a plan view of the C chip. 1... IC chip, 2... First functional circuit section of IC,
3... Second functional circuit section of IC, 4... Counter circuit, 5... Read only memory (ROM), 6...
・Power supply pad of the first functional circuit section, 7... Counter increment terminal pad, 8... ROM output pad,
9... GND pad of the first functional circuit section, 10... Pad of the second functional circuit section, 11... Power supply pad of the second functional circuit section, 12... GND pad of the second functional circuit section ,
13...Lead wiring, 14...Resistor, 15...Tap.

Claims (1)

【特許請求の範囲】 1、第一の機能回路部および第二の機能回路部を同一の
半導体モノリシックチップ内に組み込み、第一の機能回
路部に第二の機能回路部を言及する情報を外部に電気的
に取り出せる手段を設けたことを特徴とするマスタース
ライス方式の半導体集積回路装置。 2、第一の機能回路部をカウンタ回路とリードオンリー
メモリとから形成し、カウンタ回路の出力がリードオン
リーメモリのアドレスに接続されている特許請求の範囲
第1項記載のマスタースライス方式の半導体集積回路装
置。
[Claims] 1. A first functional circuit section and a second functional circuit section are incorporated into the same semiconductor monolithic chip, and information referring to the second functional circuit section is externally provided to the first functional circuit section. 1. A master slice type semiconductor integrated circuit device characterized by being provided with a means for electrically extracting. 2. The master slice type semiconductor integrated circuit according to claim 1, wherein the first functional circuit section is formed of a counter circuit and a read-only memory, and the output of the counter circuit is connected to the address of the read-only memory. circuit device.
JP62259001A 1987-10-13 1987-10-13 Semiconductor integrated circuit device of masterslice layout Pending JPH01100943A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62259001A JPH01100943A (en) 1987-10-13 1987-10-13 Semiconductor integrated circuit device of masterslice layout

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62259001A JPH01100943A (en) 1987-10-13 1987-10-13 Semiconductor integrated circuit device of masterslice layout

Publications (1)

Publication Number Publication Date
JPH01100943A true JPH01100943A (en) 1989-04-19

Family

ID=17327976

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62259001A Pending JPH01100943A (en) 1987-10-13 1987-10-13 Semiconductor integrated circuit device of masterslice layout

Country Status (1)

Country Link
JP (1) JPH01100943A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1098157A (en) * 1996-09-20 1998-04-14 Nec Corp Semiconductor integrated circuit device
WO2002045139A1 (en) * 2000-12-01 2002-06-06 Hitachi, Ltd Method for identifying semiconductor integrated circuit device, method for manufacturing semiconductor integrated circuit device, semiconductor integrated circuit device and semiconductor chip
JP5013387B2 (en) * 2000-12-01 2012-08-29 ルネサスエレクトロニクス株式会社 Integrated circuit device identification method, integrated circuit device manufacturing method, integrated circuit device, semiconductor chip, and mount

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5793520A (en) * 1980-12-02 1982-06-10 Nec Corp Semiconductor device
JPS5793519A (en) * 1980-12-02 1982-06-10 Nec Corp Semiconductor device
JPS58176966A (en) * 1982-04-09 1983-10-17 Nec Corp integrated circuit device
JPS6053043A (en) * 1983-09-02 1985-03-26 Toshiba Corp Semiconductor integrated circuit device
JPS6095930A (en) * 1983-10-31 1985-05-29 Toshiba Corp Test system for integrated circuit and integrated circuit device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5793520A (en) * 1980-12-02 1982-06-10 Nec Corp Semiconductor device
JPS5793519A (en) * 1980-12-02 1982-06-10 Nec Corp Semiconductor device
JPS58176966A (en) * 1982-04-09 1983-10-17 Nec Corp integrated circuit device
JPS6053043A (en) * 1983-09-02 1985-03-26 Toshiba Corp Semiconductor integrated circuit device
JPS6095930A (en) * 1983-10-31 1985-05-29 Toshiba Corp Test system for integrated circuit and integrated circuit device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1098157A (en) * 1996-09-20 1998-04-14 Nec Corp Semiconductor integrated circuit device
WO2002045139A1 (en) * 2000-12-01 2002-06-06 Hitachi, Ltd Method for identifying semiconductor integrated circuit device, method for manufacturing semiconductor integrated circuit device, semiconductor integrated circuit device and semiconductor chip
US6941536B2 (en) 2000-12-01 2005-09-06 Hitachi, Ltd. Method for identifying semiconductor integrated circuit device, method for manufacturing semiconductor integrated circuit device, semiconductor integrated circuit device and semiconductor chip
US7282377B2 (en) 2000-12-01 2007-10-16 Hitachi, Ltd. Method for identifying semiconductor integrated circuit device, method for manufacturing semiconductor integrated circuit device, semiconductor integrated circuit device and semiconductor chip
US7665049B2 (en) 2000-12-01 2010-02-16 Hitachi, Ltd. Method for identifying semiconductor integrated circuit device, method for manufacturing semiconductor integrated circuit device, semiconductor integrated circuit device and semiconductor chip
JP5013387B2 (en) * 2000-12-01 2012-08-29 ルネサスエレクトロニクス株式会社 Integrated circuit device identification method, integrated circuit device manufacturing method, integrated circuit device, semiconductor chip, and mount

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