JPH0110927Y2 - - Google Patents
Info
- Publication number
- JPH0110927Y2 JPH0110927Y2 JP3469082U JP3469082U JPH0110927Y2 JP H0110927 Y2 JPH0110927 Y2 JP H0110927Y2 JP 3469082 U JP3469082 U JP 3469082U JP 3469082 U JP3469082 U JP 3469082U JP H0110927 Y2 JPH0110927 Y2 JP H0110927Y2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- wafer holder
- wafers
- cassette carrier
- vertical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 235000012431 wafers Nutrition 0.000 claims description 73
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 5
- 238000012545 processing Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Description
【考案の詳細な説明】
(a) 考案の技術分野
本考案は集積回路用ウエハに絶縁膜形成処理を
行う減圧CVD装置に係り、特にウエハ自動給材
機構に関するものである。[Detailed Description of the Invention] (a) Technical Field of the Invention The present invention relates to a low-pressure CVD apparatus for forming an insulating film on integrated circuit wafers, and particularly relates to an automatic wafer material feeding mechanism.
(b) 技術の背景
集積回路に用いられるウエハは厳しい管理条件
のもとで、高度の電気的、化学的処理がなされ、
しかも微細加工であるため、特に高い信頼度が要
求される。このため高品質を維持するため各加工
装置の自動化は、半導体加工技術の重要な要件で
あり、各装置間を連結するインライン方式では特
にキヤリア構造、給材機構等は重要な課題であ
り、種々の工夫対策が従来よりなされている。(b) Background of the technology Wafers used for integrated circuits undergo advanced electrical and chemical processing under strict control conditions.
Moreover, since it is microfabricated, particularly high reliability is required. Therefore, in order to maintain high quality, automation of each processing device is an important requirement for semiconductor processing technology, and in the inline method that connects each device, especially the carrier structure, material feeding mechanism, etc. are important issues, and various Countermeasures have been taken in the past.
(c) 従来技術と問題点
インライン方式のウエハ加工装置では、絶縁被
膜形式には減圧CVD装置、パターン形成にはレ
ジスト膜塗布、露光転写、現像、エツチング装置
等が最適の条件下に配設され、各装置間をエアベ
ルト又はゴムベルト等で自動搬送されて所定の加
工処理が順次なされる。ウエハはキヤリアに装着
されたまゝ各装置に供給され加工処理がなされる
のが理想的であるが、装置によつてバツチ処理が
必要であり、その都度手作業が介在し、装置の効
率化及びウエハ特性の安定性を欠く憾がある。(c) Conventional technology and problems In in-line wafer processing equipment, low-pressure CVD equipment is used for insulating coatings, and resist film coating, exposure transfer, development, and etching equipment are installed under optimal conditions for pattern formation. , and are automatically transported between each device using an air belt or a rubber belt, and predetermined processing is sequentially performed. Ideally, the wafers would be fed to each device while still attached to the carrier and processed, but some devices require batch processing, which requires manual labor each time, making it difficult to improve the efficiency of the device. Unfortunately, the wafer characteristics lack stability.
第1図は従来の減圧CVD装置を示す図である。 FIG. 1 is a diagram showing a conventional reduced pressure CVD apparatus.
1は反応管、2は排気口、3はガス導入口、4
はエンドキヤツプ、5は加熱ヒータ、6はウエ
ハ、7はウエハホールダーをそれぞれ示す。 1 is a reaction tube, 2 is an exhaust port, 3 is a gas inlet port, 4
5 is an end cap, 5 is a heater, 6 is a wafer, and 7 is a wafer holder.
ウエハ6を縦方向に数ミリ間隔で並べてウエハ
ーホルダー7に装着し、反応管1内に配設し、エ
ンドキヤツプ4により密閉される。 Wafers 6 are arranged vertically at intervals of several millimeters and mounted on a wafer holder 7, placed inside a reaction tube 1, and sealed with an end cap 4.
反応管1に排気口2を設けて減圧し、一方反応
ガスをガス導入口3より注入し、加熱ヒータ5に
より反応管1及びウエハ6を加熱することにより
ガス反応を誘起させ、ウエハ6の表面上に絶縁膜
通常シリコン膜を形成させる。 An exhaust port 2 is provided in the reaction tube 1 to reduce the pressure, while a reaction gas is injected through the gas inlet 3, and a gas reaction is induced by heating the reaction tube 1 and the wafer 6 with the heater 5. An insulating film, usually a silicon film, is formed thereon.
この方法は1バツチ当り多数枚のウエハー処理
が可能であるが、ウエハ6をウエハーホルダー7
への装着及び反応管1への出入れは、半自動又は
手操作によるのが一般的で、構造上完全な自動化
は困難とされていた。 This method allows processing of a large number of wafers per batch, but the wafers 6 are placed on the wafer holder 7.
Attachment to the reaction tube 1 and loading/unloading into and out of the reaction tube 1 are generally performed semi-automatically or manually, and complete automation has been considered difficult due to the structure.
(d) 考案の目的
本考案は上記の点に鑑み、減圧CVD装置に有
効なウエハ自動給材装置の提供を目的とする。(d) Purpose of the invention In view of the above points, the purpose of the invention is to provide an automatic wafer material feeding device that is effective for low-pressure CVD equipment.
(e) 考案の構成
上記目的は、水平のウエハを縦に複数段保持す
る縦形ウエハホルダーを有し、該ウエハ上に絶縁
皮膜を形成する縦型減圧CVD装置のウエハ給材
機構であつて、水平のウエハを縦に複数段保持す
る縦形のカセツトキヤリアを前記ウエハホルダー
へのウエハの搬入側と、前記ウエハホルダーから
のウエハの搬出側に使用し、前記ウエハホルダー
を、回転機構と、前記搬入側、搬出側に配設した
カセツトキヤリアと共に上下に移動するリフト機
構とを備えた前記縦型減圧CVD装置の底部のエ
ンドキヤツプ上に設け、前記回転機構により、前
記ウエハホルダーの開口部を、搬入時には搬入側
に、搬出時には搬出側に向けると共に、前記リフ
ト機構により、前記ウエハホルダーのウエハ保持
段と前記搬入側、搬出側に配設したカセツトキヤ
リアとのウエハ保持段とが同期して上下移動する
ようにすることを特徴とするウエハ自動給材機構
によつて達成することができる。(e) Structure of the invention The above object is a wafer material feeding mechanism for a vertical reduced pressure CVD apparatus that has a vertical wafer holder that holds horizontal wafers vertically in multiple stages and forms an insulating film on the wafers, A vertical cassette carrier that holds horizontal wafers vertically in multiple stages is used on the wafer loading side to the wafer holder and the wafer unloading side from the wafer holder, and the wafer holder is connected to the rotation mechanism and the loading and unloading side. The opening of the wafer holder is installed on the end cap at the bottom of the vertical reduced pressure CVD apparatus, and is equipped with a lift mechanism that moves up and down together with a cassette carrier arranged on the side and the unloading side. The wafer holding stage of the wafer holder and the wafer holding stages of the cassette carriers disposed on the loading and unloading sides are synchronously moved up and down by the lift mechanism. This can be achieved by an automatic wafer supply mechanism characterized in that it does the following.
(f) 考案の実施例
第2図は本考案の一実施例を示す減圧CVD装
置のウエハ自動給材機構を説明するための図であ
る。(f) Embodiment of the invention FIG. 2 is a diagram for explaining an automatic wafer material feeding mechanism of a reduced pressure CVD apparatus showing an embodiment of the invention.
第2図の減圧CVD装置は、図示のように反応
管11を縦に配設する縦型であり、ウエハ16は
水平にし縦に複数段がウエハホルダー17に収容
されるようになつており、従つて、ウエハ16の
搬入側のカセツトキヤリアA19も処理後の搬出
側のカセツトキヤリアB20もウエハ16を水平
にし縦に複数段保持するようにしたものである。 The reduced pressure CVD apparatus shown in FIG. 2 is of a vertical type in which the reaction tubes 11 are arranged vertically as shown in the figure, and the wafers 16 are placed horizontally and housed in a plurality of vertical stages in a wafer holder 17. Therefore, both the cassette carrier A19 on the loading side of the wafers 16 and the cassette carrier B20 on the unloading side after processing are designed to hold the wafers 16 horizontally and vertically in a plurality of stages.
カセツトキヤリアA19に収容されたウエハ1
6の反応管のウエハホルダー17への搬入は、カ
セツトキヤリアA19に収容されたウエハ16を
順次コンベア21にのせて搬送し、反応管11の
駆動回転可能なエンドキヤツプ14上の略中央に
設けられ、カセツトキヤリアA19側にその開口
を向けられたウエハホルダー17に順次搬入して
行う。 Wafer 1 accommodated in cassette carrier A19
In order to carry the reaction tubes 6 into the wafer holder 17, the wafers 16 housed in the cassette carrier A19 are sequentially placed on the conveyor 21 and conveyed, and the wafers 16 are placed approximately in the center on the end cap 14 which can be driven and rotated for the reaction tube 11. , the wafers are sequentially transferred into the wafer holder 17 whose opening is directed toward the cassette carrier A19.
所定数に達したウエハホルダー17はエンドキ
ヤツプ14と共に上下移動するリフト18に直結
されており、リフト18により反応管11内に導
かれエンドキヤツプ14により密閉される。 The wafer holders 17 that have reached a predetermined number are directly connected to a lift 18 that moves up and down together with the end cap 14, and are led into the reaction tube 11 by the lift 18 and sealed by the end cap 14.
反応管11内では排気口12を介して減圧し、
ガス導入口13より反応ガスを注入し、加熱ヒー
タ15によつてガス反応を誘起させ、絶縁膜形成
がなされる。ウエハ16の絶縁膜形成処理が完了
し、リフト18の下降に伴い、エンドキヤツプ1
4及びウエハホルダー17が下降し、エンドキヤ
ツプ14と共にウエハホルダー17も180゜回転さ
れ、ウエハホルダー17の開口部は搬出側の他の
カセツトキヤリアB20の方に向けられ、絶縁膜
形成を完了したウエハ16をコンベア21を介し
て他のカセツトキヤリアB20に収容され他工程
へ搬出される。カセツトキヤリアA19及びカセ
ツトキヤリアB20の上下運動とウエハホルダー
17の上下運動を同期させることによつて、ウエ
ハ16の、カセツトキヤリアA19からウエハホ
ルダー17への搬入及びウエハホルダー17から
カセツトキヤリアB20への搬出を順次自動的に
行なうことが可能となる。 The pressure inside the reaction tube 11 is reduced through the exhaust port 12,
A reaction gas is injected through the gas inlet 13, a gas reaction is induced by the heater 15, and an insulating film is formed. After the insulating film formation process on the wafer 16 is completed, the end cap 1 is lowered as the lift 18 is lowered.
4 and the wafer holder 17 are lowered, the wafer holder 17 is also rotated 180 degrees together with the end cap 14, and the opening of the wafer holder 17 is directed toward the other cassette carrier B20 on the unloading side, and the wafer holder 17 on which the insulating film has been formed is turned. 16 is accommodated in another cassette carrier B20 via the conveyor 21 and transported to another process. By synchronizing the vertical movement of cassette carrier A19 and cassette carrier B20 with the vertical movement of wafer holder 17, wafers 16 can be loaded from cassette carrier A19 to wafer holder 17 and unloaded from wafer holder 17 to cassette carrier B20. can be performed automatically in sequence.
このように自動化することによりウエハ16の
被膜特性は安定し、装置の稼動効率を向上させ
る。 This automation stabilizes the coating properties of the wafer 16 and improves the operating efficiency of the apparatus.
ウエハホルダー17は高温の雰囲気に耐えるた
め耐熱性部材例えば石英等で構成される。 The wafer holder 17 is made of a heat-resistant material such as quartz to withstand high-temperature atmosphere.
(g) 考案の効果
以上詳細に説明したよえに本考案の自動給材機
構により、減圧CVD装置へのウエハ供給は完全
自動化されるため、該装置の稼動率は向上すると
ともに安定した被膜特性が得られる優れた効果が
ある。(g) Effects of the invention As explained in detail above, the automatic material feeding mechanism of the invention completely automates the feeding of wafers to the low-pressure CVD equipment, which improves the operating rate of the equipment and provides stable coating properties. There are excellent effects that can be obtained.
第1図は従来の減圧CVD装置を示す図である。
第2図は本考案の一実施例である減圧CVD装置
のウエハ自動給材機構を説明するための図であ
る。図において
11は反応管、12は排気口、13はガス導入
口、14はエンドキヤツプ、15は加熱ヒータ、
16はウエハ、17はウエハホルダ、18はリフ
ト、19,20はカセツトキヤリア、21はコン
ベアを示す。
FIG. 1 is a diagram showing a conventional reduced pressure CVD apparatus.
FIG. 2 is a diagram for explaining an automatic wafer supply mechanism of a reduced pressure CVD apparatus which is an embodiment of the present invention. In the figure, 11 is a reaction tube, 12 is an exhaust port, 13 is a gas inlet, 14 is an end cap, 15 is a heater,
16 is a wafer, 17 is a wafer holder, 18 is a lift, 19 and 20 are cassette carriers, and 21 is a conveyor.
Claims (1)
ホルダーを有し、該ウエハ上に絶縁皮膜を形成す
る縦型減圧CVD装置のウエハ給材機構であつて、 水平のウエハを縦に複数段保持する縦形のカセ
ツトキヤリアを前記ウエハホルダーへのウエハの
搬入側と、前記ウエハホルダーからのウエハの搬
出側に使用し、 前記ウエハホルダーを、回転機構と、前記搬入
側、搬出側に配設したカセツトキヤリアと共に上
下に移動するリフト機構とを備えた前記縦型減圧
CVD装置の底部のエンドキヤツプ上に設け、 前記回転機構により、前記ウエハホルダーの開
口部を、搬入時には搬入側に、搬出時には搬出側
に向けると共に、前記リフト機構により、前記ウ
エハホルダーのウエハ保持段と前記搬入側、搬出
側に配設したカセツトキヤリアとのウエハ保持段
とが同期して上下移動するようにすることを特徴
とするウエハ自動給材機構。[Scope of Claim for Utility Model Registration] A wafer feed mechanism for a vertical low pressure CVD apparatus that has a vertical wafer holder that vertically holds horizontal wafers in multiple stages and forms an insulating film on the wafers, A vertical cassette carrier that holds wafers vertically in multiple stages is used on the loading side of the wafer to the wafer holder and the loading side of the wafer from the wafer holder, and the wafer holder is connected to a rotating mechanism, the loading side, The vertical depressurizer is equipped with a lift mechanism that moves up and down together with a cassette carrier disposed on the unloading side.
The opening of the wafer holder is provided on the end cap at the bottom of the CVD apparatus, and the rotation mechanism directs the opening of the wafer holder toward the loading side during loading and toward the loading side when unloading, and the lift mechanism rotates the wafer holding stage of the wafer holder. An automatic wafer feeding mechanism characterized in that a wafer holding stage including a cassette carrier and a cassette carrier disposed on the carry-in side and the carry-out side move up and down in synchronization.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3469082U JPS58138334U (en) | 1982-03-12 | 1982-03-12 | Wafer automatic material feeding mechanism |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3469082U JPS58138334U (en) | 1982-03-12 | 1982-03-12 | Wafer automatic material feeding mechanism |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58138334U JPS58138334U (en) | 1983-09-17 |
| JPH0110927Y2 true JPH0110927Y2 (en) | 1989-03-29 |
Family
ID=30046179
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3469082U Granted JPS58138334U (en) | 1982-03-12 | 1982-03-12 | Wafer automatic material feeding mechanism |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58138334U (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0630342B2 (en) * | 1984-12-25 | 1994-04-20 | 富士通株式会社 | Vertical furnace |
| JPH0539624Y2 (en) * | 1985-01-18 | 1993-10-07 |
-
1982
- 1982-03-12 JP JP3469082U patent/JPS58138334U/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58138334U (en) | 1983-09-17 |
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