JPH01120535A - Ferroelectric liquid crystal element - Google Patents
Ferroelectric liquid crystal elementInfo
- Publication number
- JPH01120535A JPH01120535A JP27872487A JP27872487A JPH01120535A JP H01120535 A JPH01120535 A JP H01120535A JP 27872487 A JP27872487 A JP 27872487A JP 27872487 A JP27872487 A JP 27872487A JP H01120535 A JPH01120535 A JP H01120535A
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- liquid crystal
- film
- ferroelectric liquid
- electrode
- sio
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Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は強誘電性液晶素子に関し、特に強誘電性液晶分
子の配向をコントロールすることによって、明、暗部を
形成する液晶表示素子に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a ferroelectric liquid crystal device, and particularly to a liquid crystal display device that forms bright and dark areas by controlling the orientation of ferroelectric liquid crystal molecules. be.
[従来の技術]
従来1強誘電性液晶素子における強誘電性液晶の配向方
法としては、セル内において温度勾配を形成して相転移
に伴い順次的な配向形成をさせる方法(湿層勾配法)や
、上下基板を一定方向に摺動させて配向させる方法(シ
アリング法)等が行なわれていたが、これらの方法は量
産性、安定性に乏しく、工業的には不適当な方法である
。[Prior Art] Conventional 1 A method for aligning ferroelectric liquid crystal in a ferroelectric liquid crystal element is a method in which a temperature gradient is formed within the cell to form sequential alignment as phase transition occurs (wet layer gradient method). However, these methods lack mass productivity and stability, and are inappropriate for industrial use.
他方、工業的に有利な方法としては、従来、 TN(ツ
ィステッド ネマチック: Twisted Nema
tic)方式の液晶セルに使用されている方法であるラ
ビング法および斜方蒸着法が有用である。On the other hand, as an industrially advantageous method, conventionally, TN (Twisted Nematic)
The rubbing method and the oblique evaporation method, which are the methods used for liquid crystal cells of the tic) type, are useful.
ラビング法は、一般にはITO(インジウム チン オ
キサイド)等の透明電極上にPI(ポリイミド)、PV
A(ポリビニルアルコール)等の有機酵11i(400
〜2000λ)を形成し、その上をナイロン、アセテー
ト、コツトン等の植毛布(毛足の長さがO,1mm〜2
.0mm )で均一にこする(ラビング: Rubbi
ng )ことによってネマチック液晶の分子長軸をラビ
ング方向に平均的にそろえようとする方法であり、 T
N、 SBE等の液晶素子では実績がある。In the rubbing method, PI (polyimide), PV
Organic fermentation 11i (400
~2000λ), and on top of that, a flocked fabric such as nylon, acetate, cotton etc.
.. 0mm) (rubbing: Rubbi)
This is a method that attempts to align the molecular long axes of nematic liquid crystals in the rubbing direction on average by
There is a track record for liquid crystal elements such as N and SBE.
ところが、この方法をそのまま強誘電性液晶の配向に適
用しようとすると、上下の基板間で分子(ダイレクタ)
の方向をねじる必要がないので、TN素子の配向の場合
と異なり、上下同方向もしくは相反する方向にラビング
処理を行なう。However, when trying to apply this method directly to the alignment of ferroelectric liquid crystals, molecules (directors) occur between the upper and lower substrates.
Since there is no need to twist the directions, unlike the case of TN element orientation, the rubbing process is performed in the same direction or in opposite directions.
このような配向処理方法で強誘電性液晶分子を配向させ
た場合に、は、S■C1相てスプレィ(SPLAY)配
向を取り易い、このスプレィ配向では、セル厚方向にお
いて分子の方向がねじれているために、見かけのチルト
角θaが小さく、透過光量が少なくなり、TN素子では
30%を越えるのに対して5%程度になってしまい、コ
ントラストが低下し、さらにジグザグ欠陥等の欠陥が多
く発生し、その制御が困難であるなど、デイスプレィと
しては望ましくない配向状態となる。When ferroelectric liquid crystal molecules are aligned using such an alignment treatment method, it is easy to obtain a SPLAY orientation in the S■C1 phase.In this spray orientation, the direction of the molecules is twisted in the cell thickness direction. As a result, the apparent tilt angle θa is small, and the amount of transmitted light is reduced to about 5%, compared to over 30% for TN elements, resulting in lower contrast and more defects such as zigzag defects. This results in an orientation state that is undesirable for a display, as it is difficult to control.
また、SiOの斜方蒸着膜を配向膜として用いる場合は
、−船釣にスイッチングの闇値を上げたり、その他にも
安定状態が多数存在することや。In addition, when using an obliquely vapor-deposited SiO film as an alignment film, the dark value of switching may be increased in boat fishing, and there may be many other stable states.
平均的に層方向に消光位をもつ配向状態が優勢になり、
マトリックス駆動し難いなどの問題かあった。On average, an orientation state with an extinction position in the layer direction becomes dominant,
There were problems such as difficulty in matrix driving.
[発明が解決しようとする問題点]
以上述べてた様に、対向して設けられた2極の電極基板
の両面に設けた有aWIのラビング処理もしくは両面に
設けたSiOの斜方蒸着などの方法を用いて配向処理を
施した場合には、■見かけのチルト角θaが小さく、透
過光量が少ない、■消光位でのもれ光が大きく、コント
ラストが低い、■その他のジグザグ欠陥等の欠陥が多く
生じ、表示品質が悪い等の欠点があった。[Problems to be Solved by the Invention] As mentioned above, the rubbing treatment of the aWI provided on both sides of the two electrode substrates provided oppositely, or the oblique evaporation of SiO provided on both sides, etc. When alignment treatment is performed using this method, the following problems occur: ■ The apparent tilt angle θa is small and the amount of transmitted light is small. ■ The leakage light at the extinction position is large and the contrast is low. ■ Other defects such as zigzag defects. There were drawbacks such as a large number of occurrences and poor display quality.
本発明は、この様な従来技術の欠点を改善するためにな
されたものであり、見かけのチルト角θaが大きく、透
過光量が多く、消光位での光学品質を向上した強誘電性
液晶素子を提供することを目的とするものである。The present invention has been made to improve the drawbacks of the prior art, and provides a ferroelectric liquid crystal element with a large apparent tilt angle θa, a large amount of transmitted light, and improved optical quality at the extinction position. The purpose is to provide
[問題点を解決するための手段]
即ち、本発明は、対向する二枚の電極間に強誘電性液晶
を挟持してなる液晶素子において、一方の電極上にはS
iOの斜方蒸着膜からなる配向膜が設けられ、かつ他方
の電極上には前記一方の電極とは異る配向膜が設けられ
ていることを特徴とする強誘電性液晶素子である。[Means for Solving the Problems] That is, the present invention provides a liquid crystal element in which a ferroelectric liquid crystal is sandwiched between two opposing electrodes.
A ferroelectric liquid crystal element characterized in that an alignment film made of an obliquely evaporated film of iO is provided, and an alignment film different from that of the one electrode is provided on the other electrode.
以下、本発明の詳細な説明する。The present invention will be explained in detail below.
本発明の強誘電性液晶素子は、対向する二枚の電極の一
方の電極上にはSiOの斜方蒸着膜からなる配向膜を設
け、他方の電極上には前記一方の電極とは異る配向膜を
設け、前記二枚の電極間に強誘電性液晶を挟持してなる
ものである。In the ferroelectric liquid crystal element of the present invention, an alignment film made of an obliquely evaporated SiO film is provided on one of two opposing electrodes, and an alignment film made of an obliquely vapor-deposited film of SiO is provided on the other electrode. An alignment film is provided, and a ferroelectric liquid crystal is sandwiched between the two electrodes.
この様に二枚の電極上には配向膜が設けられているが、
その一方には上記の様にSiO斜方蒸着膜を形成してな
るものであるが、他方の配向膜は一方の電極に設けられ
たものと異るものであればよく、特に限定はないが、好
ましくは下記に示す様に。In this way, an alignment film is provided on the two electrodes,
One of the electrodes is formed by forming an SiO oblique evaporation film as described above, but the other alignment film may be different from that provided on one electrode, and is not particularly limited. , preferably as shown below.
■無方向性の有機膜からなるもの
■−輌性処理を施した有aWiからなるもの■無aII
からなるもの
等が挙げられる。■Those made of a non-directional organic film■-Those made of aWi subjected to a chemical treatment■No aII
Examples include those consisting of.
本発明において、一方の電極上に設けられたSiOの斜
方蒸着膜の膜厚は通常400〜2000人、好ましく5
00〜1000人が望ましい。In the present invention, the thickness of the SiO obliquely vapor-deposited film provided on one electrode is usually 400 to 2000, preferably 5
00 to 1000 people is desirable.
本発明における有機膜には、ポリイミド、ポリビニルア
ルコール((PVA) 、ポリアクリロニトリル(PA
N)またはポリエチレンオキサイド (PEG)等が用
いられ、その膜厚は通常20〜2000人、好まし<2
0〜500人が望ましい。The organic film in the present invention includes polyimide, polyvinyl alcohol (PVA), polyacrylonitrile (PA).
N) or polyethylene oxide (PEG), etc., and the film thickness is usually 20 to 2000, preferably <2
Preferably 0 to 500 people.
また、焦aIllには5to2. Tilts丁a20
5またはAlzOx等が用いられ、その膜厚は通常40
0〜6000 ’人、好ましく400〜1000人が望
ましい。Also, 5to2. Tiltschoa20
5 or AlzOx, etc., and the film thickness is usually 40
0 to 6000 people, preferably 400 to 1000 people.
本発明において、一方の電極上に設けられる配向膜は、
電極上に絶縁膜を形成した後、 SiOを斜方蒸着する
ことにより容易に形成することがてきる。 SiOを斜
方蒸着としては、基板法線から70〜88℃の傾きをも
つことが好ましい。In the present invention, the alignment film provided on one electrode is
After forming an insulating film on the electrode, it can be easily formed by obliquely depositing SiO. When SiO is deposited obliquely, it is preferable to deposit the film at an angle of 70 to 88° C. from the normal to the substrate.
[作用]
本発明の強誘電性液晶素子は、対向する二枚の電極間に
強誘電性液晶を挟持してなる液晶素子において、一方の
電極上にはSiOの斜方蒸着膜からなる配向膜が設けら
れ、かつ他方の電極上には前記一方の電極とは異る配向
膜が設けられているので、その詳細は不明であるが、配
向膜が異なることにより、見かけのチルト角θaが大き
く、透過光量が多く、消光位でのもれ光を少なく、コン
トラストを高くし、光学品質を向上することができる。[Function] The ferroelectric liquid crystal element of the present invention is a liquid crystal element in which a ferroelectric liquid crystal is sandwiched between two opposing electrodes, and an alignment film made of an obliquely evaporated SiO film is provided on one electrode. is provided, and an alignment film different from that of the one electrode is provided on the other electrode. Although the details are unknown, the apparent tilt angle θa is large due to the different alignment film. , it is possible to increase the amount of transmitted light, reduce leakage light at the extinction position, increase contrast, and improve optical quality.
[実施例] 以下、実施例を示し本発明をさらに具体的に説明する。[Example] Hereinafter, the present invention will be explained in more detail with reference to Examples.
実施例1
第1図は本発明の強誘電性液晶素子の一実施例を示す断
面図である。同図に示す素子を下記の方法により作成し
た。Example 1 FIG. 1 is a sectional view showing an example of the ferroelectric liquid crystal element of the present invention. The device shown in the figure was created by the following method.
先・ず、ガラス基板lの上に、EB蒸着法により膜厚約
1000人のITO電極2をパターン形成した0次いで
、該ITO電極2上にスパッタ法によって膜厚約100
0人の5in2膜からなる絶縁@3を形成して基板Aを
得た。First, an ITO electrode 2 with a thickness of about 1000 wafers was patterned on a glass substrate 1 by EB evaporation method.Next, an ITO electrode 2 with a thickness of about 1000 yen thick was formed on the ITO electrode 2 by sputtering method.
A substrate A was obtained by forming an insulation@3 consisting of a 5in2 film of 0 people.
次に、前記基板Aと同様にして形成した基板の絶縁膜3
上に、約10−’torrの真空中でSiOを基板法線
から82°で入射して蒸着し、SiOの斜方蒸着膜6を
形成して基板Bを得た。まお、 SiOが構成する柱状
結晶の蒸発源方向の長さは約2000人でありた。Next, the insulating film 3 of the substrate was formed in the same manner as the substrate A.
SiO was deposited thereon at an angle of 82° from the normal to the substrate in a vacuum of about 10-'torr to form an obliquely deposited SiO film 6 to obtain substrate B. Well, the length of the columnar crystals composed of SiO in the direction of the evaporation source was about 2000.
この様にして得られた一方の基板Bと他方の基板Aとを
入射方向が反平行となる様に対向せしめて、シーリング
部材5として、チッソ社製LIXONBOND 100
2ABを使用し、セルギャップをコントロールする目的
で、直径的IILsのSin、の粒子をセル内に均一に
散布し、上下基板間隔を約1.1gmになる様に貼り合
せた。強誘電性液晶4として、チッソ社@ (:S−1
014をセルに注入した。The thus obtained one substrate B and the other substrate A were made to face each other so that the incident directions were antiparallel, and used as a sealing member 5 using LIXONBOND 100 manufactured by Chisso Corporation.
2AB was used, and for the purpose of controlling the cell gap, particles of diametral IILs of Sin were uniformly scattered within the cell, and the upper and lower substrates were bonded together so that the distance between them was about 1.1 gm. As the ferroelectric liquid crystal 4, Chisso Corporation @ (:S-1
014 was injected into the cell.
このようにして作成したセルを等吉相まて昇温した後、
ch相→SmA相→Sac’″相への相転移時に適度な
(〜10°C/hr )徐冷を行った。After heating the cell created in this way through the Toyoshi phase,
Appropriate slow cooling (~10°C/hr) was performed during the phase transition from ch phase to SmA phase to Sac''' phase.
この様にして得られた強誘電性液晶素子の配向状態をク
ロスニコル下で観察した結果、均一な黒/白のドメイン
を呈し、通常のラビングセルで見られるようなジグザグ
欠陥等の配向異常点はなく、より均一性のよい配向が得
られた。見かけのチルト角はIs@であった。Observation of the alignment state of the ferroelectric liquid crystal element obtained in this way under crossed nicol conditions revealed uniform black/white domains, and alignment abnormalities such as zigzag defects seen in normal rubbing cells. However, a more uniform alignment was obtained. The apparent tilt angle was Is@.
また、上記の例においては、基板上にSiOの斜方蒸着
H6を形成する場合、 SiOを基板法線から82°の
範囲で入射して蒸着しているが、これらの範囲を、例え
ば入射方向で±In” 、 SiOが構成する柱状結晶
のカラム(柱)の長さが600Å以上でも上記と同じよ
うな傾向が見られた。In addition, in the above example, when forming the oblique evaporation H6 of SiO on the substrate, SiO is evaporated by being incident in a range of 82° from the normal line of the substrate, but these ranges can be changed, for example, to the direction of incidence. The same tendency as above was observed even when the column length of the columnar crystal composed of SiO was 600 Å or more.
又、SiOの斜方蒸着膜の対向層の絶縁膜(誘電w2)
にラビング等の処理を行っても、はぼ同様の結果が得ら
れた。In addition, the insulating film (dielectric w2) of the opposing layer of the obliquely deposited SiO film
Similar results were obtained even when processing such as rubbing was performed.
実施例2
実施例1に示したセル構成において(第1図)、SiO
の斜方蒸着膜の対向基板Aの構成を次のように変えた。Example 2 In the cell configuration shown in Example 1 (Fig. 1), SiO
The configuration of the opposing substrate A of the obliquely deposited film was changed as follows.
絶縁123 (5ift層、厚さ 1000人)上に、
ポリイミド(東し社製 5P−710)の4%溶液を3
500「plの回転数でコーティング(スピンナー法)
した後、300℃で焼成してポリイミド薄膜を形成した
基板を使用した。On insulation 123 (5ift layer, 1000 people thick),
3% solution of polyimide (manufactured by Toshisha 5P-710)
Coating at a rotation speed of 500 pl (spinner method)
After that, a substrate was used which was baked at 300°C to form a polyimide thin film.
セル厚は粒径的1.0 gmの5in2ビーズを散布す
ることでコントロールして1強誘電性液晶としてチッソ
社!I!cs−1014を用いた。The cell thickness is controlled by scattering 5in2 beads with a particle size of 1.0 gm, making it a ferroelectric liquid crystal manufactured by Chisso! I! cs-1014 was used.
このような構成にした場合には1強誘電性液晶分子の配
向はミクロには整ってはいなく、欠陥が存在するが、全
体的に双安定なパルス応答を行い、前述の見かけのチル
ト角は約15°近くに広かった。したがって、透過率が
著しく改善されていることが認められた。In such a configuration, the orientation of the ferroelectric liquid crystal molecules is not microscopically aligned and there are defects, but overall a bistable pulse response is achieved, and the apparent tilt angle described above is It was wide at about 15 degrees. Therefore, it was recognized that the transmittance was significantly improved.
実施例3
実施例2で示したセル構成において、有機膜上な斜方蒸
着の入射方向と並行にラビングを行った。Example 3 In the cell configuration shown in Example 2, rubbing was performed in parallel to the incident direction of oblique evaporation on the organic film.
ラビングはアセテート布を用い、1000rp■の回転
数で10秒間処理を行った。アセテート布の毛先は約0
.15■履基板面と接触させた。セルギャップは1.2
1L■、強誘電性液晶としてチッソ社製C8−1014
を用いた。The rubbing process was performed using an acetate cloth at a rotation speed of 1000 rpm for 10 seconds. The bristles of acetate cloth are approximately 0.
.. 15■ Made contact with the shoe board surface. Cell gap is 1.2
1L ■, C8-1014 manufactured by Chisso Corporation as ferroelectric liquid crystal
was used.
このように構成したセルでは、配向は一方向に均質な欠
陥は伴うものの規則的であり、青−白の良好な光学応答
を示した。見かけのチルト角は約12.5@であった。In the cell constructed in this manner, the orientation was regular although there were homogeneous defects in one direction, and a good blue-white optical response was exhibited. The apparent tilt angle was approximately 12.5@.
[発明の効果]
本発明によれば、強誘電性液晶配向膜として、一方の配
向膜にSiOの斜方蒸着膜を用いて、他方に有機、無機
膜もしくはそのラビング膜等を用いることにより、見か
けのチルト角θaが大きく。[Effects of the Invention] According to the present invention, as a ferroelectric liquid crystal alignment film, by using an obliquely deposited SiO film for one alignment film and using an organic or inorganic film or a rubbing film thereof for the other, The apparent tilt angle θa is large.
透過光量が多く、消光位での光学品質を向上した強誘電
性液晶素子を得ることができる。A ferroelectric liquid crystal element with a large amount of transmitted light and improved optical quality at the extinction position can be obtained.
第1図は本発明の強誘電性液晶素子の一実施例を示す断
面図である。
l・・・ガラス基板 2−ITO電極3・・・絶
縁膜 4・−・強誘電性液晶5・・・シーリ
ング部材 6・・・SiOの斜方蒸着膜A、B−・・
基板FIG. 1 is a sectional view showing an embodiment of the ferroelectric liquid crystal element of the present invention. l...Glass substrate 2-ITO electrode 3...Insulating film 4...Ferroelectric liquid crystal 5...Sealing member 6...SiO oblique evaporation film A, B-...
substrate
Claims (6)
なる液晶素子において、一方の電極上にはSiOの斜方
蒸着膜からなる配向膜が設けられ、かつ他方の電極上に
は前記一方の電極とは異る配向膜が設けられていること
を特徴とする強誘電性液晶素子。(1) In a liquid crystal element in which a ferroelectric liquid crystal is sandwiched between two opposing electrodes, an alignment film made of an obliquely vapor-deposited SiO film is provided on one electrode, and an alignment film made of an obliquely vapor-deposited film of SiO is provided on one electrode, and 2. A ferroelectric liquid crystal device, characterized in that an alignment film different from the one electrode is provided.
機膜である特許請求の範囲第1項記載の強誘電性液晶素
子。(2) The ferroelectric liquid crystal element according to claim 1, wherein the alignment film provided on the other electrode is a non-directional organic film.
施した有機膜である特許請求の範囲第1項記載の強誘電
性液晶素子。(3) The ferroelectric liquid crystal element according to claim 1, wherein the alignment film provided on the other electrode is an organic film subjected to uniaxial treatment.
リアクリロニトリルまたはポリエチレンオキサイドから
なる特許請求の範囲第2項または第3項記載の強誘電性
液晶素子。(4) A ferroelectric liquid crystal device according to claim 2 or 3, wherein the organic film is made of polyimide, polyvinyl alcohol, polyacrylonitrile, or polyethylene oxide.
特許請求の範囲第1項記載の強誘電性液晶素子。(5) The ferroelectric liquid crystal element according to claim 1, wherein the alignment film provided on the other electrode is an inorganic film.
5またはAl_2O_3である特許請求の範囲第5項記
載の強誘電性液晶素子。(6) The inorganic film is SiO_2, TiO_2, Ta_2O_
5. The ferroelectric liquid crystal element according to claim 5, which is Al_2O_3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27872487A JPH01120535A (en) | 1987-11-02 | 1987-11-02 | Ferroelectric liquid crystal element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27872487A JPH01120535A (en) | 1987-11-02 | 1987-11-02 | Ferroelectric liquid crystal element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01120535A true JPH01120535A (en) | 1989-05-12 |
Family
ID=17601316
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27872487A Pending JPH01120535A (en) | 1987-11-02 | 1987-11-02 | Ferroelectric liquid crystal element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01120535A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0329926A (en) * | 1989-06-27 | 1991-02-07 | Seiko Instr Inc | Optical write liquid crystal light valve |
| US5643654A (en) * | 1990-11-29 | 1997-07-01 | Mitsui Petrochemical Industries, Ltd. | Pellicle structure and process for preparation thereof with dissolution of coating layer |
| JP2002148631A (en) * | 2000-11-09 | 2002-05-22 | Citizen Watch Co Ltd | Liquid crystal display element |
| JP2007033967A (en) * | 2005-07-28 | 2007-02-08 | Seiko Epson Corp | Method for manufacturing liquid crystal device, liquid crystal device and electronic apparatus |
-
1987
- 1987-11-02 JP JP27872487A patent/JPH01120535A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0329926A (en) * | 1989-06-27 | 1991-02-07 | Seiko Instr Inc | Optical write liquid crystal light valve |
| US5643654A (en) * | 1990-11-29 | 1997-07-01 | Mitsui Petrochemical Industries, Ltd. | Pellicle structure and process for preparation thereof with dissolution of coating layer |
| JP2002148631A (en) * | 2000-11-09 | 2002-05-22 | Citizen Watch Co Ltd | Liquid crystal display element |
| JP2007033967A (en) * | 2005-07-28 | 2007-02-08 | Seiko Epson Corp | Method for manufacturing liquid crystal device, liquid crystal device and electronic apparatus |
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