JPH01123068A - Formation of thin film on substrate surface - Google Patents
Formation of thin film on substrate surfaceInfo
- Publication number
- JPH01123068A JPH01123068A JP28118887A JP28118887A JPH01123068A JP H01123068 A JPH01123068 A JP H01123068A JP 28118887 A JP28118887 A JP 28118887A JP 28118887 A JP28118887 A JP 28118887A JP H01123068 A JPH01123068 A JP H01123068A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film
- substrate
- sputtering
- mixed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 38
- 239000000758 substrate Substances 0.000 title claims abstract description 20
- 230000015572 biosynthetic process Effects 0.000 title abstract 2
- 239000000463 material Substances 0.000 claims abstract description 65
- 239000010408 film Substances 0.000 claims abstract description 30
- 239000000919 ceramic Substances 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 14
- 238000005477 sputtering target Methods 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 10
- 239000000203 mixture Substances 0.000 abstract description 5
- 239000000853 adhesive Substances 0.000 abstract 2
- 230000001070 adhesive effect Effects 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000010953 base metal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
Landscapes
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は、例えば金属とセラミックの様に熱膨張率に大
きな差のある２種の材料の一方を基材、他方を膜材とし
て基材表面にスパッタリング法にて膜材の薄膜を生成す
る方法に関するものである。[Detailed Description of the Invention] <Industrial Application Field> The present invention is directed to the use of two materials having large differences in coefficient of thermal expansion, such as metal and ceramic, as a base material and the other as a film material. The present invention relates to a method of forming a thin film of a film material on a surface by sputtering.
〈従来の技術〉
従来、金属を基板とし、その表面に熱膨張率の小さいセ
ラミック薄膜をスパッタリング法にて生成する場合、金
属表面に直接セラミック薄膜を生成するか、若しくは、
その金属より熱膨張率は小さいかセラミックより熱膨張
率の大きな別種の金属の薄膜を基材金属表面に生成した
後、その上にセラミック薄膜を生成している。<Prior art> Conventionally, when a metal is used as a substrate and a ceramic thin film with a small coefficient of thermal expansion is produced on the surface of the substrate by sputtering, the ceramic thin film is produced directly on the metal surface, or
A thin film of a different type of metal, which has a coefficient of thermal expansion smaller than that of the metal or a coefficient of thermal expansion larger than that of ceramic, is formed on the surface of the base metal, and then a ceramic thin film is formed thereon.
〈発明が解決しようとする問題点〉
しかしながら前記した従来の前者の方法によると、熱膨
張率に差がある為、基材と膜の間で剥離か生じるととも
に基材と膜との密着性が劣る等の問題があり、又後者の
方法によると、熱膨張による剥離の問題はある程度解消
されるが、密着性については十分満足し得る結果は得ら
れないという問題があった。<Problems to be solved by the invention> However, according to the former method described above, due to the difference in coefficient of thermal expansion, peeling occurs between the base material and the film, and the adhesion between the base material and the film deteriorates. In addition, although the latter method solves the problem of peeling due to thermal expansion to some extent, it does not give a sufficiently satisfactory result in terms of adhesion.
本発明は係る問題点に対処する為提案されたもので、熱
膨張による剥離がなく、しかも密着性のよい基材面への
薄膜生成方法を提供しようとするものである。The present invention has been proposed to address these problems, and aims to provide a method for forming a thin film on a substrate surface that is free from peeling due to thermal expansion and has good adhesion.
く問題点を解決するための手段〉
本発明は前記した問題点を解決する為、熱膨張率に大き
な差のある２種の材料の一方を基材、他方を１膜材とし
て基材表面にスパッタリンク法にて膜材の薄膜を生成す
る方法において、先ず前記２種の材料の混合材よりなる
スパッタリングターゲットをスパッタリングして基材表
面に前記混合材の薄膜を生成し、次いでその上に前記膜
材よりなるスパッタリングターゲットをスパッタリング
してその薄膜を生成することを特徴とするものである。Means for Solving the Problems> In order to solve the above-mentioned problems, the present invention uses two materials with large differences in coefficient of thermal expansion, one of which is used as a base material and the other one is used as a film material, on the surface of the base material. In a method for producing a thin film of a film material by the sputter link method, first, a sputtering target made of a mixture of the two materials mentioned above is sputtered to produce a thin film of the mixture material on the surface of the base material, and then a thin film of the mixture material is formed on the surface of the substrate. The method is characterized in that a thin film is produced by sputtering a sputtering target made of a film material.
く作用〉
上記の様にして基材と薄膜との間に基材の材料と薄膜の
材料との混合材よりなる膜を中間膜として介在させる様
にしている為、基材と中間膜との間、及び中間膜とその
外側の薄膜との間は、夫々同種材性によって熱膨張差が
小さくなるとともに密着力が向上する。As described above, since a film made of a mixture of the base material and the thin film is interposed between the base material and the thin film as an intermediate film, the interaction between the base material and the intermediate film is The difference in thermal expansion between the intermediate film and the thin film on the outside of the intermediate film and the outer thin film is reduced due to the same material properties, and the adhesion strength is improved.
従って剥離の発生かなく、又十分な密着性か選られる。Therefore, the material should be selected to ensure no peeling and sufficient adhesion.
〈実施例〉 以下に本発明の一実施例を説明する。<Example> An embodiment of the present invention will be described below.
ここては、一実施例として金属基材面へセラミック薄膜
を生成する方法について説明する。Here, as an example, a method for producing a ceramic thin film on a metal substrate surface will be described.
スパッタリングは２種のターゲットを順に使用し、２種
の薄膜を２層に形成する。Sputtering uses two types of targets in sequence to form two types of thin films in two layers.
先ず、金属基材と同種の金属とセラミック薄膜と同種の
セラミックを混合して製造したターゲットを使用してス
パッタリングを行い、金属基材表面に上記混合材の薄膜
を生成する。First, sputtering is performed using a target manufactured by mixing the same type of metal as the metal base material, a ceramic thin film, and the same type of ceramic to generate a thin film of the mixed material on the surface of the metal base material.
次いで、この表面に目的とするセラミック薄膜と同種の
セラミックで製造したターゲットを使用してスパッタリ
ングを行い、セラミック薄膜を生成する。Next, sputtering is performed on this surface using a target made of the same type of ceramic as the desired ceramic thin film to produce a ceramic thin film.
この様にして２層膜を形成することによって、金属基材
と混合材膜との間、及び混合材膜とセラミックとの間で
は、夫々同種材性によって熱膨張差が小さくなるととも
に密着性か向上する。By forming a two-layer film in this way, the difference in thermal expansion between the metal base material and the mixed material film, and between the mixed material film and the ceramic are reduced due to their similar material properties, and the adhesion is improved. improves.
この際、混合材膜とするターゲットの材料混合比は、そ
れらの熱膨張率の値により適当な比率に選定すればよい
。At this time, the material mixing ratio of the target to be used as the mixed material film may be selected to be an appropriate ratio depending on the values of their coefficients of thermal expansion.
尚、上記実施例では、基材を金属、膜材をセラミックと
した例について説明したが逆の場合でも同様に実施する
ことかできる。Incidentally, in the above embodiment, an example was explained in which the base material was metal and the membrane material was ceramic, but the same method can be implemented even in the reverse case.
又、熱膨張率に大きな差のある金属同志、或いは他の材
料等にも適用することができる。It can also be applied to metals or other materials that have a large difference in coefficient of thermal expansion.
更には、厳しい条件下ではその混合材膜の材料混合比率
を順次板やかに変化させて、３層以上の多層膜としてこ
れに対応することができる。Furthermore, under severe conditions, the material mixing ratio of the mixed material film can be successively and rapidly changed, so that a multilayer film of three or more layers can be used.
〈発明の効果〉
以上から明らかな様に本発明の生成方法によると、熱膨
張率に大きな差のある材料の場合でも剥離の発生がなく
、且つ密着性にも優れた強固な薄膜を生成することがで
きる。<Effects of the Invention> As is clear from the above, according to the production method of the present invention, even in the case of materials with large differences in coefficient of thermal expansion, a strong thin film is produced that does not cause peeling and has excellent adhesion. be able to.
特許出願人 日本建鉄株式会社。Patent applicant: Nippon Kentetsu Corporation.
Claims (6)
材、他方を膜材とし、該基材表面に該膜材の薄膜を生成
する方法において、先ず前記２種の材料の混合材よりな
るスパッタリングターゲットをスパッタリングして前記
基材表面に前記混合材の薄膜を生成し、次いでその上に
前記膜材より成るスパッタリングターゲットをスパッタ
リングして、その薄膜を生成することを特徴とする基材
面への薄膜生成方法。(1) In a method in which one of two materials with large differences in coefficient of thermal expansion is used as a base material and the other as a film material, and a thin film of the film material is formed on the surface of the base material, first, the two materials are A sputtering target made of a mixed material is sputtered to produce a thin film of the mixed material on the surface of the base material, and then a sputtering target made of the film material is sputtered thereon to produce the thin film. A method for forming a thin film on a substrate surface.
であることを特徴とする特許請求の範囲第１項記載の基
材面への薄膜生成方法。(2) The method for forming a thin film on a substrate surface according to claim 1, wherein one of the two types of materials is a metal and the other is a ceramic.
特徴とする特許請求の範囲第２項記載の基材面への薄膜
生成方法。(3) The method for forming a thin film on a substrate surface according to claim 2, wherein the substrate is metal and the film material is ceramic.
特徴とする特許請求の範囲第２項記載の基材面への薄膜
生成方法。(4) The method for forming a thin film on a substrate surface according to claim 2, wherein the substrate is ceramic and the film material is metal.
する特許請求の範囲第１項記載の基材面への薄膜生成方
法。(5) The method for forming a thin film on a substrate surface according to claim 1, wherein both the substrate and the film material are metal.
させて少なくとも２層以上に生成されたことを特徴とす
る特許請求の範囲第１項記載の基材面への薄膜生成方法
。(6) The method for forming a thin film on a substrate surface according to claim 1, wherein the thin film of the mixed material is formed in at least two layers by sequentially changing the mixing ratio of the mixed material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28118887A JPH01123068A (en) | 1987-11-06 | 1987-11-06 | Formation of thin film on substrate surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28118887A JPH01123068A (en) | 1987-11-06 | 1987-11-06 | Formation of thin film on substrate surface |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01123068A true JPH01123068A (en) | 1989-05-16 |
Family
ID=17635571
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28118887A Pending JPH01123068A (en) | 1987-11-06 | 1987-11-06 | Formation of thin film on substrate surface |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01123068A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000018979A1 (en) * | 1998-10-01 | 2000-04-06 | Applied Science And Technology, Inc. | Sputter deposition apparatus |
| US7100954B2 (en) | 2003-07-11 | 2006-09-05 | Nexx Systems, Inc. | Ultra-thin wafer handling system |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS526380A (en) * | 1975-07-07 | 1977-01-18 | Matsushita Electric Ind Co Ltd | Abrasion resistant thin film |
| JPS6199640A (en) * | 1984-10-18 | 1986-05-17 | Mitsubishi Metal Corp | Manufacture of composite target material |
-
1987
- 1987-11-06 JP JP28118887A patent/JPH01123068A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS526380A (en) * | 1975-07-07 | 1977-01-18 | Matsushita Electric Ind Co Ltd | Abrasion resistant thin film |
| JPS6199640A (en) * | 1984-10-18 | 1986-05-17 | Mitsubishi Metal Corp | Manufacture of composite target material |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000018979A1 (en) * | 1998-10-01 | 2000-04-06 | Applied Science And Technology, Inc. | Sputter deposition apparatus |
| US7100954B2 (en) | 2003-07-11 | 2006-09-05 | Nexx Systems, Inc. | Ultra-thin wafer handling system |
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