JPH01129961A - Physical vapor deposition method for alloy - Google Patents
Physical vapor deposition method for alloyInfo
- Publication number
- JPH01129961A JPH01129961A JP29031287A JP29031287A JPH01129961A JP H01129961 A JPH01129961 A JP H01129961A JP 29031287 A JP29031287 A JP 29031287A JP 29031287 A JP29031287 A JP 29031287A JP H01129961 A JPH01129961 A JP H01129961A
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- vapor deposition
- composition
- physical vapor
- deposition method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000956 alloy Substances 0.000 title claims description 39
- 229910045601 alloy Inorganic materials 0.000 title claims description 39
- 238000000034 method Methods 0.000 title claims description 20
- 238000005240 physical vapour deposition Methods 0.000 title claims description 11
- 239000000203 mixture Substances 0.000 claims description 29
- 238000001704 evaporation Methods 0.000 claims description 23
- 230000008020 evaporation Effects 0.000 claims description 22
- 230000005496 eutectics Effects 0.000 description 9
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 239000006023 eutectic alloy Substances 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 238000007872 degassing Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は合金の物理蒸着法に関するものである。[Detailed description of the invention] [Industrial application field] This invention relates to a physical vapor deposition method for alloys.
蒸気圧の異なる２種以上の元素で構成される合金を真空
蒸着法、スパッター法またはイオンブレーティング法な
どの物理蒸着法（Ｐｈｙｓｉｃａｌ ＶａｐｏｒＤｅｐ
ｏｓｉｔｉｏｎ ： Ｐ Ｖ Ｄ ）の手段によって基
材表面に蒸着させる場合、従来は目的組成そのままの合
金が蒸発源に用いられて来た。通常物理蒸着法において
は予め蒸発源内の不純物を除去するために、蒸発源を一
定時間加熱溶融し、いわゆるガス抜きを行なうが、この
際に蒸気圧の異なる合金元素のうち蒸発しやすい元素が
優先的に蒸発して蒸発源に残留する合金組成は変化する
ことになる。したがって、基材表面に形成される合金被
膜の組成は目的組成とは異るものとなり均一組成のもの
も得られなくなる。そこで、このような欠点を避けるた
めに、たとえば特開昭６１−５１９５１号公報のように
、共晶合金の共晶比よりも蒸発しやすい元素の組成比を
大きくした合金を蒸発源とする方法が開示されているが
、このような方法ではＡｕＳｎ共品合金品合金、検量線
を求めて、ガス出し時間とＳｎの量とを正確に実施しな
ければ高価な金を有する合金の全体が使用できなくなっ
てしまうので、経済的に有利な方法とは決して言えない
。An alloy composed of two or more elements with different vapor pressures is deposited using a physical vapor deposition method such as a vacuum evaporation method, a sputtering method, or an ion blasting method.
In the case of vapor deposition on the surface of a substrate by means of PVD, conventionally an alloy with the desired composition has been used as an evaporation source. Normally, in the physical vapor deposition method, in order to remove impurities in the evaporation source in advance, the evaporation source is heated and melted for a certain period of time to perform so-called degassing, but at this time, priority is given to the element that evaporates easily among alloying elements with different vapor pressures. The alloy composition that evaporates and remains in the evaporation source will change. Therefore, the composition of the alloy coating formed on the surface of the base material will be different from the intended composition, and it will no longer be possible to obtain a uniform composition. Therefore, in order to avoid such drawbacks, for example, as disclosed in Japanese Unexamined Patent Application Publication No. 61-51951, a method is proposed in which the evaporation source is an alloy in which the composition ratio of elements that are easily evaporated is higher than the eutectic ratio of the eutectic alloy. However, in such a method, the entire alloy containing expensive gold is used unless the AuSn alloy is used, the calibration curve is determined, and the outgassing time and amount of Sn are accurately determined. This cannot be said to be an economically advantageous method.
以上述べたように、従来の技術においては、基材表面に
目的とする合金組成の被膜を形成するために必要な蒸発
源の合金組成のｆｆ１ｆを簡便でしかも経済的に行なう
方法は未だ見出されていないという問題点があった。As mentioned above, in the conventional technology, there is still no method to easily and economically perform ff1f of the alloy composition of the evaporation source necessary to form a film with the desired alloy composition on the surface of the base material. The problem was that it was not done.
上記の問題点を解決するために、この発明は目的組成の
合金と、その合金を構成する元素単体のうちで蒸発しや
すい成分とを二つ以上の別の蒸発源から同時に蒸発させ
て合金の物理蒸着法を行なうという手段を採用したもの
である。In order to solve the above-mentioned problems, the present invention simultaneously evaporates an alloy having a target composition and a component that is easily evaporated among the elements constituting the alloy from two or more separate evaporation sources. This method employs a physical vapor deposition method.
二つ以上の別の蒸発源のうちの一つに目的組成の合金を
用い、ほかの蒸発源に蒸発しやすい金属元素を用いるこ
とによって、目的組成の合金から消失する蒸発しやすい
金属元素をほかの蒸発源から蒸発量を任意に調整しなが
ら補給することが可能になり、基材表面に形成される合
金被膜の組成を均一でしかも目的組成に合致させるうえ
で、きわめて有意義な作用を発揮させ得ることになる。By using an alloy with the desired composition as one of two or more different evaporation sources and using a metal element that is easily evaporated as the other evaporation source, it is possible to eliminate the easily evaporated metal element that disappears from the alloy with the desired composition. It is now possible to replenish the amount of evaporation from the evaporation source while adjusting it arbitrarily, and it has an extremely significant effect in making the composition of the alloy film formed on the surface of the substrate uniform and matching the target composition. You will get it.
まず、この発明の合金の物理蒸着法を実施するにあたっ
ては、目的組成の合金の量を、基材表面に形成する合金
蒸着膜に必要な量以上に過剰に投入すると、蒸着処理終
了後に、蒸発源に残った合金の組成は、目的合金の組成
とは大きく変るため、再使用は不可能となる。したがっ
て、蒸発源の一つに使用する目的組成の合金量は、基材
表面に形成される合金被膜に見合う量とすることが望ま
しく、過剰な量とすることは経済的に好ましくない。First, when carrying out the physical vapor deposition method of the alloy of this invention, if the amount of alloy of the desired composition is added in excess of the amount necessary for the alloy vapor deposited film to be formed on the surface of the base material, the evaporation will occur after the vapor deposition process is completed. The composition of the alloy remaining in the source differs greatly from the composition of the target alloy, making it impossible to reuse it. Therefore, it is desirable that the amount of the alloy having the desired composition used in one of the evaporation sources be an amount commensurate with the alloy film formed on the surface of the base material, and it is economically undesirable to use an excessive amount.
つぎに、この発明の合金の物理蒸着法は、通常蒸着によ
って接合する技術分野においてはすべて活用し得るもの
であり、金属同士の接合、非金属物質と金属との接合な
どに有用であるが、特に融点の調整の厳しい技術分野、
たとえば、ダイヤモンド、立方晶窒化硼素等を主体とす
る材料のように、高温ではろう付けが出来ない材料に対
しては有効である。さらに、低温で蒸発しやすい錫Ｓｎ
、鉛Ｐｂ、ｌ！ｌＡｇ、アンチモンｓｂ等の金属を成分
とするような合金の蒸着に際しては、この発明の方法は
特に効果的であるといえる。したがって、目的組成の合
金が金Ａｕと錫Ｓｎとの共晶組成であり、蒸発しやすい
金属がＳｎであるような場合には、この発明の方法は格
好の方法といえる。以下、具体的な実施例を示す。Next, the physical vapor deposition method for alloys of the present invention can be used in all technical fields that involve joining by ordinary vapor deposition, and is useful for joining metals together, joining nonmetallic substances and metals, etc. Especially in technical fields where melting point adjustment is difficult.
For example, it is effective for materials that cannot be brazed at high temperatures, such as materials mainly composed of diamond, cubic boron nitride, etc. Furthermore, tin, which easily evaporates at low temperatures,
, lead Pb, l! It can be said that the method of the present invention is particularly effective when depositing alloys containing metals such as lAg and antimony sb. Therefore, when the target alloy has a eutectic composition of gold (Au) and tin (Sn), and the metal that evaporates easily is Sn, the method of the present invention can be said to be suitable. Specific examples will be shown below.
実施例１：
ＡｕＳｎ共晶組成（Ｓｎ２０重量％）の合金被膜をダイ
ヤモンドヒートシンク（１ｍＸ１ｍＸ０．３−の単結晶
）表面に形成するために、共晶組成のＡｕＳｎ合金ｌ′
ｏｇを図に示すような蒸着装置の蒸発源１に、また蒸発
しやすい金属としてＳｎ１０ｇを蒸発源２に用いて、１
分間ガス抜きを行なった後、シャッター３を開いて蒸着
を始めた。蒸発源１に用いたＡｕＳｎ共晶合金の被蒸着
体４への蒸発速度が毎秒２０人で、蒸発源２のＳｎの蒸
発速度が毎秒４〜６人となるように、それぞれ膜厚モニ
ター５および６によって制御しながら蒸発源１および２
をそれぞれ加熱し、蒸着膜厚が３ｎになるまで同時蒸着
を実施した。被蒸着体４の表面に形成された蒸着膜の組
成はＳｎ２０重量％で目的とするＡｕＳｎの共晶組成と
同じであった。なお蒸発源２のＳｎの消費量は１．１ｇ
であった。Example 1: In order to form an alloy film with an AuSn eutectic composition (Sn 20% by weight) on the surface of a diamond heat sink (1 m x 1 m x 0.3 - single crystal), an AuSn alloy l' with a eutectic composition was used.
og as the evaporation source 1 of a vapor deposition apparatus as shown in the figure, and 10 g of Sn as an easily evaporated metal as the evaporation source 2.
After degassing for a minute, the shutter 3 was opened to start vapor deposition. The film thickness monitor 5 and Evaporation sources 1 and 2 while controlled by 6
were heated, and simultaneous vapor deposition was performed until the thickness of the vapor-deposited film reached 3n. The composition of the vapor deposited film formed on the surface of the object 4 was 20% by weight of Sn, which was the same as the target eutectic composition of AuSn. The consumption amount of Sn in evaporation source 2 is 1.1g.
Met.
実施例２：
ＰｂＡｇＳｎ共晶成分（Ａｇ１．４重量％、５ｎ６２．
５重量％）の合金被膜をタングステン・銅（Ｃｕ１０重
量％）合金（２ｗｘ５ｍｘ１ｍｍ）の表面に形成するた
めに、共晶組成のＰｂＡｇＳｎ共晶合金５ｇと単体Ｐｂ
１０ｇを用いてこの発明の方法による蒸着処理を行なっ
た。実施例１と同様、１分間ガス抜きをした後、ＰｂＡ
ｇＳｎ共晶合金の蒸着速度が毎秒３０人に、またＰｂ単
体の蒸着速度が毎秒２〜３人になるよう制御しながら、
１−の膜厚を形成するまで同時蒸着した。その結果、所
望の共晶組成のＰｂＡｇＳｎ合金被膜が得られた。Example 2: PbAgSn eutectic component (Ag 1.4% by weight, 5n62.
5% by weight) on the surface of a tungsten-copper (Cu 10% by weight) alloy (2wx5mx1mm), 5g of a PbAgSn eutectic alloy with a eutectic composition and a single Pb
A vapor deposition process using the method of this invention was performed using 10 g. As in Example 1, after degassing for 1 minute, PbA
While controlling the deposition rate of the gSn eutectic alloy to 30 people per second and the deposition rate of Pb alone to 2 to 3 people per second,
Co-evaporation was performed until a film thickness of 1- was formed. As a result, a PbAgSn alloy film with a desired eutectic composition was obtained.
以上、実施例１においてはＡｕＳｎ二元共晶合金を、ま
た、実施例２においてはＰｂＡｇＳｎ三元共晶合金を例
示したが、二元もしくは三元または共晶組成の合金に限
定するものではな（、その他任意の多元合金に対しても
同様の方法を適用することが出来る。Although the AuSn binary eutectic alloy was exemplified in Example 1 and the PbAgSn ternary eutectic alloy was exemplified in Example 2, they are not limited to alloys with binary, ternary, or eutectic compositions. (A similar method can be applied to any other multi-component alloy.
以上述べたように、この発明の合金の物理蒸着法に従っ
て、目的成分組成の合金を蒸発源として蒸発させると同
時に薫発しやすい元素を別の蒸発源から制御しながら蒸
発させると、基材面上に所望の成分組成の合金被膜が得
られ、その操作は簡便で被膜組成も従来法では見られな
い正確さが認められた。したがって、この発明の意義は
きわめて大きい。As described above, according to the physical vapor deposition method for alloys of the present invention, when an alloy with a target component composition is evaporated as an evaporation source and at the same time an element that is easily evaporated is evaporated from another evaporation source under control, it is possible to An alloy film with the desired composition was obtained, the operation was simple, and the film composition was found to be accurate, which was not seen in conventional methods. Therefore, the significance of this invention is extremely large.
図はこの発明の合金の物理蒸着法に使用する装置の概要
を例示する装置図である。
１．２・・・・・・蒸発源、 ３・・・・・・シャッタ
ー、４・・・・・・被蒸着体、 ５．６・・・・・・
膜厚モニター。
特許出願人 住友電気工業株式会社
同 代理人 鎌 １） 文 二The figure is a diagram illustrating an outline of the apparatus used in the physical vapor deposition method of the alloy of the present invention. 1.2... Evaporation source, 3... Shutter, 4... Evaporation target, 5.6...
Film thickness monitor. Patent applicant: Sumitomo Electric Industries, Ltd. Agent: Kama 1) Bun 2
Claims (1)
ちで蒸発しやすい成分とを二つ以上の別の蒸発源から同
時に蒸発させることを特徴とする合金の物理蒸着法。A physical vapor deposition method for an alloy, characterized by simultaneously evaporating an alloy having a desired composition and a component that is easily evaporated among the elements constituting the alloy from two or more separate evaporation sources.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62290312A JP2582095B2 (en) | 1987-11-16 | 1987-11-16 | Manufacturing method of diamond heat sink |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62290312A JP2582095B2 (en) | 1987-11-16 | 1987-11-16 | Manufacturing method of diamond heat sink |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01129961A true JPH01129961A (en) | 1989-05-23 |
| JP2582095B2 JP2582095B2 (en) | 1997-02-19 |
Family
ID=17754473
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62290312A Expired - Lifetime JP2582095B2 (en) | 1987-11-16 | 1987-11-16 | Manufacturing method of diamond heat sink |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2582095B2 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5943876A (en) * | 1982-09-04 | 1984-03-12 | Konishiroku Photo Ind Co Ltd | Evaporation source |
| JPS5943875A (en) * | 1982-09-04 | 1984-03-12 | Konishiroku Photo Ind Co Ltd | Evaporation source and its using method |
-
1987
- 1987-11-16 JP JP62290312A patent/JP2582095B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5943876A (en) * | 1982-09-04 | 1984-03-12 | Konishiroku Photo Ind Co Ltd | Evaporation source |
| JPS5943875A (en) * | 1982-09-04 | 1984-03-12 | Konishiroku Photo Ind Co Ltd | Evaporation source and its using method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2582095B2 (en) | 1997-02-19 |
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