JPH01130405A - Dielectric porcelain composition - Google Patents

Dielectric porcelain composition

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Publication number
JPH01130405A
JPH01130405A JP62287670A JP28767087A JPH01130405A JP H01130405 A JPH01130405 A JP H01130405A JP 62287670 A JP62287670 A JP 62287670A JP 28767087 A JP28767087 A JP 28767087A JP H01130405 A JPH01130405 A JP H01130405A
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JP
Japan
Prior art keywords
dielectric
dielectric constant
less
cuo
weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62287670A
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Japanese (ja)
Other versions
JP2643197B2 (en
Inventor
Hiroaki Ichikawa
裕章 市川
Harunobu Sano
晴信 佐野
Hiroshi Tamura
宏 田村
Yukio Sakabe
行雄 坂部
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Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
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Publication date
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Priority to JP62287670A priority Critical patent/JP2643197B2/en
Publication of JPH01130405A publication Critical patent/JPH01130405A/en
Application granted granted Critical
Publication of JP2643197B2 publication Critical patent/JP2643197B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PURPOSE:To obtain a dielectric porcelain composition which is low in loss and of a high dielectric constant by composing it with SrTiO3, CaTiO3, PbTiO3, Bi2O3, TiO2, and CuO and specifying its component ratio. CONSTITUTION:A composition is composed of SrTiO3, CaTiO3, Bi2O3, TiO2, and CuO. Its component ratio in wt.% is SrTiO3:20.0 to 27.5%, CaTiO3:6.0 to 26.0%, PbTiO3:12.0 to 26.0%, Bi2O3:19.0 to 32.0%, TiO2:8.0 to 15.0%, and CuO:0.05 to 0.5%. Thereby, the component of a specific conductivity within 500 to 1200, a low dielectric loss tangent in 1MHz alternating electric field of 2.5% max., a low rate of the temperature change of dielectric constant in a temperature range of -25 deg.C to 85 deg.C of within + or -5%, and a resistivity at 85 deg.C of 10<11>OMEGA.cm min. can be obtained.

Description

【発明の詳細な説明】 く産業上の利用分野〉 この発明は低損失で比誘電率の高い誘電体磁器組成物に
関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application This invention relates to a dielectric ceramic composition with low loss and high dielectric constant.

〈従来の技術とその問題点〉 従来から、低損失を目的とし、しかも比較的比誘電率の
高い誘電体磁器材料として、Sr n Os −CaT
LOs−PbTLOg  Byes  ”log、ある
いはSr TL 03− r T、Os  Pb n 
Os −BL 20 s−孔Otを主成分とした材料が
用いられている。
<Conventional technology and its problems> Sr n Os -CaT has been used as a dielectric ceramic material with the purpose of low loss and relatively high dielectric constant.
LOs-PbTLOg Byes ”log, or Sr TL 03- r T, Os Pb n
A material containing Os -BL 20 s-pores Ot as a main component is used.

しかしながら、これらの材料の比誘電率の温度変化率は
、−25℃から85℃の温度範囲内で±10%以上と大
きくなる場合が多く、比誘電率の温度変化率が±10%
以内となる場合では比誘電率が1000以下と低下して
しまう。
However, the temperature change rate of the relative permittivity of these materials is often as large as ±10% or more within the temperature range of -25°C to 85°C;
If it is within the range, the dielectric constant will drop to 1000 or less.

また、低損失材料とはいっても比誘電率が1000以下
である場合を除いて1MHzの交流電場中の誘電正接は
2.5%以上と大きく、高周波、高電圧を印加した場合
の電力損失はかなり大きい。
In addition, even though it is a low-loss material, the dielectric loss tangent in a 1 MHz alternating current electric field is as large as 2.5% or more, unless the dielectric constant is 1000 or less, and the power loss when high frequency and high voltage is applied is low. Quite large.

これに対して、Sr TL Os  Ca TL O3
−Pb TL 0s−aL2o 3  Tb Otを主
成分とし、これニcILOと他の副成分を添加した材料
が前記の問題をある程度まで解消することは特公昭56
−51443号はかによって知られている。
On the other hand, Sr TL Os Ca TL O3
-Pb TL 0s-aL2o 3 It was reported in Japanese Patent Publication No. 1983 that a material containing Tb Ot as the main component, to which cILO and other subcomponents are added, can solve the above-mentioned problems to a certain extent.
No.-51443 is known.

しかしながら、CLLOを添加することにより、85℃
を越える温度域では、比抵抗が低下してしまい、比較的
低い電界強度で絶縁破壊が起こりやすい欠点がある。ま
た比誘電率を500から1200までの範囲に限定した
場合、比誘電率の温度変化率が±5%以内になるような
材料が望まれている。
However, by adding CLLO, 85 °C
In a temperature range exceeding 100 mL, the resistivity decreases and dielectric breakdown is likely to occur at a relatively low electric field strength. Further, when the relative permittivity is limited to a range of 500 to 1200, a material is desired whose relative permittivity changes with temperature within ±5%.

〈発明の目的〉 この発明は上記した従来の誘電体磁器組成物の問題点に
鑑みて、・比誘電率が500〜1200の範囲内で、 +11 1 M HZの交流電場中での誘電正接が2.
5%以下と小さい。
<Objective of the Invention> In view of the problems of the conventional dielectric ceramic compositions described above, the present invention has been made to: - have a dielectric constant in the range of 500 to 1200 and a dielectric loss tangent in an AC electric field of +11 1 MHz; 2.
It is small at less than 5%.

(2比誘電率の温度変化率が一25℃から85℃の温度
範囲内で±5%以内と小さい。
(The temperature change rate of the dielectric constant is small within ±5% within the temperature range of 125°C to 85°C.

+31 85℃での比抵抗が10110・α以上である
+31 Specific resistance at 85°C is 10110·α or more.

などの特徴を有する誘電体磁器組成物を提供することを
目的とするものである。
It is an object of the present invention to provide a dielectric ceramic composition having the following characteristics.

く問題点を解決するための手段〉 上記の目的を達成するために、この発明はSr TL 
Os、Ca TL (h、PbTiO3、[1,、Om
 、T、Oz、CILOから構成され、その成分比が重
量比率でSrTiO3:20.0〜27.5%、Ca 
Ti Os :  6. Om26.0%、PbTLO
x:12.0〜26.0%、BL20s :19.Om
32.0%、Tlz:8.0〜15.0%、CLO: 
0.05〜0.5%であること、あるいは、さらにこれ
らの組成に5na2:  1.0〜3.5%、酸化マン
ガンを11n02に換算して0.05〜0.3%、Lh
20 s 、NJ 203などの希土類酸化物を0.1
〜0.6%添加した誘電体磁器組成物を提供するもので
ある。
Means for Solving the Problems> In order to achieve the above object, the present invention
Os, Ca TL (h, PbTiO3, [1,, Om
, T, Oz, and CILO, whose component ratios are SrTiO3: 20.0 to 27.5% by weight, Ca
TiOs: 6. Om26.0%, PbTLO
x: 12.0-26.0%, BL20s: 19. Om
32.0%, Tlz: 8.0-15.0%, CLO:
0.05 to 0.5%, or in addition to these compositions, 5na2: 1.0 to 3.5%, manganese oxide 0.05 to 0.3% in terms of 11n02, Lh.
20 s, rare earth oxides such as NJ 203 at 0.1
This provides a dielectric ceramic composition containing ~0.6% of the additive.

〈作用〉 この発明の誘電体磁器組成物を構成するSr TL O
s、Ca TL (h、Pb T= O,、B= 20
3 、T= Ot、CULOなどの組成範囲の限定理由
について説明すると、Sr TL (hを20.0〜2
7.5重量%とするのは、Sr Ti o!の量がこの
範囲以外では比誘電率が500以下となり、比誘電率の
温度変化率が±5%以内にならない。
<Operation> Sr TL O constituting the dielectric ceramic composition of the present invention
s, Ca TL (h, Pb T= O,, B= 20
3, T = Ot, CULO, etc., to explain the reason for limiting the composition range, Sr TL (h is 20.0 to 2
The content of 7.5% by weight is Sr Ti o! If the amount is outside this range, the dielectric constant will be 500 or less, and the temperature change rate of the dielectric constant will not be within ±5%.

Ca TL 03が26,0重量%を越えると、比誘電
率が500以下となり、また6、0重量%以下であると
比誘電率が1200以上となり、1MHzでの誘電損失
が2.5%以上となるうえ、さらに比誘電率の温度変化
率が±5%以内にならない。
If Ca TL 03 exceeds 26.0% by weight, the dielectric constant will be 500 or less, and if it is 6.0% by weight or less, the dielectric constant will be 1200 or more, and the dielectric loss at 1MHz will be 2.5% or more. Moreover, the temperature change rate of the dielectric constant does not fall within ±5%.

Pb TL Osについては、この量が26.0重量%
を越えると、比誘電率が1200以上となり、かつ比誘
電率の温度変化率が±5%以内にならない。また12,
0重量%以下では比誘電率が500以下となる。
For PbTLOs, this amount is 26.0% by weight
If it exceeds 1,200, the relative permittivity will be 1200 or more, and the temperature change rate of the relative permittivity will not be within ±5%. Also 12,
If it is 0% by weight or less, the dielectric constant will be 500 or less.

Bi 20 sの量が32.0重量%を越えるとIMH
zでの誘電損失が2.5%以上となり、また19.0重
量%以下では比誘電率の温度変化率が±5%以内になら
ない。
If the amount of Bi20s exceeds 32.0% by weight, IMH
If the dielectric loss at z is 2.5% or more, and if it is 19.0% by weight or less, the temperature change rate of the dielectric constant will not be within ±5%.

■、02の量は、15.0重量%を越えるとIMHzで
の誘電損失が2.5%以上となり、また8、0重量%以
下では安定した焼結体が得られない場合があり、仮に安
定した磁器が得られたとしても比誘電率が500以下と
なり、85℃での比抵抗が1011Ω・c!n以下とな
るので好ましくない。
■ If the amount of 02 exceeds 15.0% by weight, the dielectric loss at IMHz will be 2.5% or more, and if it is less than 8.0% by weight, a stable sintered body may not be obtained. Even if stable porcelain could be obtained, the dielectric constant would be less than 500, and the resistivity at 85°C would be 1011Ω・c! n or less, which is not preferable.

CILOの吊は、0.51ffi%を越えると85℃で
の比抵抗が1011Ω・ctn以下となり、0.05重
量%以下ではIMHzでの誘電正接が2.5%以上とな
り、また比誘電率の温度変化率が±5%以内にならない
When the CILO suspension exceeds 0.51ffi%, the specific resistance at 85°C becomes less than 1011Ω・ctn, and when it becomes less than 0.05% by weight, the dielectric loss tangent at IMHz becomes more than 2.5%, and the relative dielectric constant Temperature change rate does not fall within ±5%.

次に、Sn OHと希土類酸化物(例えばLIL203
、■、0.など)には、CILOの添加によって低下し
た高温での比抵抗を上げる効果が認められる。
Next, Sn OH and rare earth oxide (e.g. LIL203
,■,0. ) has the effect of increasing the resistivity at high temperatures, which was lowered by the addition of CILO.

しかし、Sn Oeの量が3.5重量%を越えると比誘
電率が500以下となり、比誘電率の温度変化率が±5
%以内にならない。
However, when the amount of Sn Oe exceeds 3.5% by weight, the relative permittivity becomes less than 500, and the temperature change rate of the relative permittivity becomes ±5.
% or less.

また、希土類元素の酸化物の量が0.6重量%を越える
と、比誘電率が500以下となる。
Further, when the amount of rare earth element oxide exceeds 0.6% by weight, the dielectric constant becomes 500 or less.

酸化マンガンは比誘電率を極端に下げることなく、1M
’Hzでの誘電正接を低下させる効果があるが、−02
に換算して0.3重量%を越えると高温での比抵抗が低
下する。
Manganese oxide is 1M without significantly lowering the dielectric constant.
It has the effect of lowering the dielectric loss tangent at 'Hz, but -02
When the amount exceeds 0.3% by weight, the specific resistance at high temperatures decreases.

次に、この発明で得られる誘電体磁器組成物の比誘電率
の範囲を500〜1200と限定した理由について述べ
ると、機械による部品の自動挿入が普及してきており、
それに合わせて部品の外観形状を統一する必要が生じで
きた。これに伴ない、1種類のみの誘電体材料では広範
囲な静電容量を得ることができなくなっている。従って
、広範囲な静電容量を得るために比誘電率の異なる数種
類の誘電体材料を用意する必要がある。
Next, the reason why the range of relative dielectric constant of the dielectric ceramic composition obtained by this invention is limited to 500 to 1200 is explained because automatic insertion of parts by machine is becoming popular.
In line with this, it became necessary to standardize the external shape of the parts. Along with this, it is no longer possible to obtain a wide range of capacitance using only one type of dielectric material. Therefore, in order to obtain a wide range of capacitance, it is necessary to prepare several types of dielectric materials with different dielectric constants.

この発明はその目的のために比誘電率の範囲を上記のよ
うに限定するのである。
For that purpose, the present invention limits the range of relative permittivity as described above.

〈実施例〉 次に、この発明を実施例により詳細に説明する。<Example> Next, the present invention will be explained in detail using examples.

まず、原料として5rC03、CaCO3、Pb3O4
、■、08、Sn Oe  、 Bt 20s  、 
 CLLO、MIICO3、La203 、NJ2(h
  を用いた。これらの原料を第1表に示す粗成となる
ように秤量した。次いで秤量した原料をアルミナボール
ととも嶋ホットに入れ、16時間混合した。
First, as raw materials 5rC03, CaCO3, Pb3O4
, ■, 08, Sn Oe, Bt 20s,
CLLO, MIICO3, La203, NJ2 (h
was used. These raw materials were weighed to give the crude products shown in Table 1. Next, the weighed raw materials were placed in a Shima Hot with alumina balls and mixed for 16 hours.

得られたスラリーを脱水乾燥したのち、匣に入れ900
℃で2時間仮焼した。
After dehydrating and drying the obtained slurry, it was placed in a box and heated to 900 ml.
It was calcined at ℃ for 2 hours.

これをポリエチレンポットにアルミナボール、バインダ
ーとともに入れ、16時間の混合、粉砕をしたのち、蒸
発乾燥し、篩を用いて造粒した。
This was placed in a polyethylene pot together with alumina balls and a binder, mixed for 16 hours, pulverized, evaporated to dryness, and granulated using a sieve.

得られた粉末を油圧プレス機により直径12.、、厚さ
1.2mmとなるように成形した。
The obtained powder was pressed into a diameter of 12 mm using a hydraulic press. ,, It was molded to have a thickness of 1.2 mm.

なお、この成形体の密度は3.5gJであった。Note that the density of this molded body was 3.5 gJ.

この成形体を匣に入れ、大気中で1100〜1200℃
の温度で2時間焼成した。
This molded body was placed in a box and heated to 1100 to 1200℃ in the atmosphere.
It was baked at a temperature of 2 hours.

このようにして作製した試料の両端面に銀ペーストを塗
布し、800℃で焼付けて電極とした。
Silver paste was applied to both end faces of the sample thus prepared and baked at 800°C to form electrodes.

かくして得られた試料について、比誘電率、誘電正接、
静電容量の温度変化率(−25℃〜85℃で20℃を基
準とした最大変化率、最小変化率)、85℃での絶縁抵
抗値を測定したところ、第2表に示す結果が得られた。
Regarding the sample thus obtained, the relative dielectric constant, dielectric loss tangent,
When we measured the temperature change rate of capacitance (maximum change rate and minimum change rate from -25°C to 85°C with 20°C as the standard) and insulation resistance value at 85°C, we obtained the results shown in Table 2. It was done.

なお、比誘電率および誘電正接はインピーダンスアナラ
イザーを用い、1KHzと1MHzの周波数で測定した
。また静電容量の温度変化率は一25℃〜85℃の温度
範囲で20℃での静電容量を基準とした容量変化率[1
00×(C−C16℃)/C2o℃%1の最大値、最小
値を測定した。
Note that the dielectric constant and dielectric loss tangent were measured using an impedance analyzer at frequencies of 1 KHz and 1 MHz. In addition, the temperature change rate of capacitance is the capacitance change rate [1
The maximum and minimum values of 00×(C-C16°C)/C2o°C%1 were measured.

表中*印を付した試料番号は、この発明の請求範囲外で
ある。
Sample numbers marked with * in the table are outside the scope of the claims of this invention.

第     1      表 第     2     表 〈発明の効果〉 以上の実施例から明らかなように、この発明によれば比
誘電率が500〜1200の範囲内で1Ml−12の交
流電場中での誘電正接が2.5%以下と小さく、比誘電
率の温度変化率が一25℃〜85°Cの温度範囲内で±
5%以内と小さい値を示す誘電体磁器組成物を提供する
ことができるのである。
Table 1 Table 2 <Effects of the Invention> As is clear from the above examples, according to the present invention, the dielectric loss tangent in an alternating current electric field of 1 Ml-12 is within the range of 500 to 1200 and the dielectric loss tangent is 2. It is as small as .5% or less, and the temperature change rate of relative permittivity is ± within the temperature range of 125°C to 85°C.
This makes it possible to provide a dielectric ceramic composition that exhibits a small value of 5% or less.

Claims (2)

【特許請求の範囲】[Claims] (1)SrTiO_3、CaTiO_3、PbTiO_
3、Bi_2O_3、TiO_2、CuOから構成され
、その成分比が重量比率で SrTiO_3:20.0〜27.5% CaTiO_3:6.0〜26.0% PbTiO_3:12.0〜26.0% Bi_2O_3:19.0〜32.0% TiO_2:8.0〜15.0% CuO:0.05〜0.5% であることを特徴とする誘電体磁器組成物。
(1) SrTiO_3, CaTiO_3, PbTiO_
3. It is composed of Bi_2O_3, TiO_2, and CuO, and their component ratios are SrTiO_3: 20.0 to 27.5% by weight, CaTiO_3: 6.0 to 26.0%, PbTiO_3: 12.0 to 26.0% Bi_2O_3: 19.0-32.0% TiO_2: 8.0-15.0% CuO: 0.05-0.5% A dielectric ceramic composition.
(2)特許請求の範囲第1項で示した組成にさらに重量
比率でSnO_2:1.0〜3.5%、酸化マンガンを
MnO_2に換算して0.05〜0.3%、希土類元素
の酸化物を0.1〜0.6%添加したことを特徴とする
特許請求の範囲第1項記載の誘電体磁器組成物。
(2) In addition to the composition shown in claim 1, the weight ratio of SnO_2 is 1.0 to 3.5%, manganese oxide is 0.05 to 0.3% in terms of MnO_2, and rare earth elements are added. The dielectric ceramic composition according to claim 1, characterized in that 0.1 to 0.6% of an oxide is added.
JP62287670A 1987-11-13 1987-11-13 Dielectric porcelain composition Expired - Fee Related JP2643197B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62287670A JP2643197B2 (en) 1987-11-13 1987-11-13 Dielectric porcelain composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62287670A JP2643197B2 (en) 1987-11-13 1987-11-13 Dielectric porcelain composition

Publications (2)

Publication Number Publication Date
JPH01130405A true JPH01130405A (en) 1989-05-23
JP2643197B2 JP2643197B2 (en) 1997-08-20

Family

ID=17720199

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62287670A Expired - Fee Related JP2643197B2 (en) 1987-11-13 1987-11-13 Dielectric porcelain composition

Country Status (1)

Country Link
JP (1) JP2643197B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6451721B2 (en) * 1999-12-27 2002-09-17 Murata Manufacturing Co. Ltd. Dielectric ceramic composition

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5329599A (en) * 1976-08-30 1978-03-18 Taiyo Yuden Kk Dielectric ceramic composition
JPS5651443A (en) * 1979-10-01 1981-05-09 Mitsubishi Chem Ind Ltd Preparation of methylenedicarbanilate

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5329599A (en) * 1976-08-30 1978-03-18 Taiyo Yuden Kk Dielectric ceramic composition
JPS5651443A (en) * 1979-10-01 1981-05-09 Mitsubishi Chem Ind Ltd Preparation of methylenedicarbanilate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6451721B2 (en) * 1999-12-27 2002-09-17 Murata Manufacturing Co. Ltd. Dielectric ceramic composition

Also Published As

Publication number Publication date
JP2643197B2 (en) 1997-08-20

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