JPH0113217B2 - - Google Patents
Info
- Publication number
- JPH0113217B2 JPH0113217B2 JP57199214A JP19921482A JPH0113217B2 JP H0113217 B2 JPH0113217 B2 JP H0113217B2 JP 57199214 A JP57199214 A JP 57199214A JP 19921482 A JP19921482 A JP 19921482A JP H0113217 B2 JPH0113217 B2 JP H0113217B2
- Authority
- JP
- Japan
- Prior art keywords
- photoresist
- acetate
- organic solvent
- pattern
- based organic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
産業上の利用分野
この発明は、半導体装置の製造等に用いられる
フオトレジストの除去方法に関する。
従来例の構成とその問題点
半導体装置の製造工程には、フオトレジストを
マスクとして金属、絶縁膜、半導体のエツチング
にイオンエツチングを用いたり、あるいは不純物
導入法にイオン注入法等が用いられている。とこ
ろでイオンエツチング工程やイオン注入工程では
フオトレジストをマスクとして被加工物を加工す
るため、イオン照射によつてフオトレジストは硬
化する。従来この硬化したフオトレジストを酸素
ガス要囲気中のプラズマエツチングやレジスト除
去液（J100商品名）等によつて除去していた。し
かし従来の方法では完全な除去が不可能であつた
り、たとえ除去できても処理時間が長く容易に除
去できないという問題点があつた。
発明の目的
この発明は、上に述べた従来の欠点に鑑み、硬
化したフオトレジストを短時間で容易に除去でき
る方法を提供する。
発明の構成
この発明は、酢酸エステル系有機溶剤を含む溶
液に半導体基板を浸漬させ、さらに望ましくはこ
れを加熱することによつてイオン注入工程やイオ
ンエツチング工程等でマスクとして使用したフオ
トレジストを短時間で容易に除去する。
実施例の説明
次に本発明を実施例によつて詳細に説明する。
（実施例 １）
半絶縁性GaAs基板にソース、ドレイン領域を
イオン注入で形成する場合、まず第１図に断面図
示すように半絶縁性GaAs基板１の表面に選択イ
オン注入のマスクとなるポジ型のフオトレジスト
２（AZ1400−27、商品名）を塗布する（第１図）。
次に所定のパターンに形成されたフオトマスク３
を用いて接触露光する（第２図）。ついで現像液
（MF312、商品名）で現像し、水洗して乾燥をす
ると所望のフオトレジストパターンが形成される
（第３図）。次にSiイオンを150KeV、1014cm-2で
注入しソース、ドレイン領域４を形成する（第４
図）。
注入後基板１′を酢酸ｎブチル５に浸漬し、沸
騰するまで加熱する（第５図）。この状態で２〜
３分放置すればフオトレジスト２は完全に除去さ
れる（第６図）。その後、アセトン等で洗浄する。
一方、従来の上記の方法で選択イオン注入を行
つた後のフオトレジストの除去方法としてアセト
ンに浸漬し超音波処理する方法、レジスト除去液
たとえばＪ−100（商品名）に浸漬し加熱して除去
する方法、酸素雰囲気中でのプラズマエツチング
による除去方法等があつた。しかし注入イオンの
ドーズ量が1014cm-2以上になると、これらの方法
では問題が現われてきた。即ち、アセトンに浸漬
し超音波処理を行つてもほとんどフオトレジスト
は除去できない。またレジスト除去液、Ｊ−100
に浸漬し80〜90℃に加熱してもフオトレジストを
完全に除去できなくパターンエツジ部分のフオト
レジストが残るという現象が現われた。これらの
除去結果を次表に示す。
INDUSTRIAL APPLICATION FIELD This invention relates to a method for removing photoresist used in the manufacture of semiconductor devices and the like. Conventional structure and its problems In the manufacturing process of semiconductor devices, ion etching is used to etch metals, insulating films, and semiconductors using photoresist as a mask, or ion implantation is used to introduce impurities. . By the way, in an ion etching process or an ion implantation process, the photoresist is used as a mask to process the workpiece, so the photoresist is hardened by ion irradiation. Conventionally, this hardened photoresist has been removed by plasma etching in an oxygen gas atmosphere, resist removal liquid (trade name J100), or the like. However, conventional methods have had problems in that it is impossible to completely remove them, or even if they can be removed, the processing time is long and they cannot be easily removed. OBJECTS OF THE INVENTION In view of the above-mentioned conventional drawbacks, the present invention provides a method for easily removing hardened photoresist in a short time. Composition of the Invention This invention shortens the photoresist used as a mask in an ion implantation process, an ion etching process, etc. by immersing a semiconductor substrate in a solution containing an acetate-based organic solvent and preferably heating it. Easily removed in time. DESCRIPTION OF EXAMPLES Next, the present invention will be explained in detail by way of examples. (Example 1) When forming source and drain regions on a semi-insulating GaAs substrate by ion implantation, first, as shown in the cross-sectional view in FIG. Apply mold photoresist 2 (AZ1400-27, trade name) (Figure 1).
Next, a photomask 3 formed in a predetermined pattern
Contact exposure is performed using a (Fig. 2). Then, it is developed with a developer (MF312, trade name), washed with water, and dried to form the desired photoresist pattern (Fig. 3). Next, Si ions are implanted at 150 KeV and 10 14 cm -2 to form source and drain regions 4 (fourth
figure). After implantation, the substrate 1' is immersed in n-butyl acetate 5 and heated until it boils (FIG. 5). 2~ in this state
If left for 3 minutes, the photoresist 2 will be completely removed (FIG. 6). Then, wash with acetone or the like. On the other hand, as a conventional method for removing photoresist after performing selective ion implantation using the above-mentioned method, there is a method of immersing it in acetone and treating it with ultrasonic waves, and removing it by immersing it in a resist removal solution such as J-100 (trade name) and heating it. There were several methods for removing the film, such as a method for removing it, and a method for removing it by plasma etching in an oxygen atmosphere. However, when the dose of implanted ions exceeds 10 14 cm -2 , problems appear with these methods. That is, even if it is immersed in acetone and subjected to ultrasonic treatment, almost no photoresist can be removed. Also, resist removal liquid, J-100
Even if the photoresist was immersed in water and heated to 80 to 90°C, the photoresist could not be completely removed and the photoresist remained at the edge of the pattern. The results of these removals are shown in the table below.
【表】
なお、酸素雰囲気中のプラズマエツチングでフ
オトレジストを除去すると、完全に除去すること
は可能であるが処理時間が15分程度かかり容易に
除去できなかつた。従つて本発明は、従来の方法
に比べて短時間で容易にフオトレジストを除去で
きる。上記の実施例はイオン注入工程におけるも
のであるが、本発明はその他、イオンミリング工
程等の後の硬化したフオトレジストの除去に適す
る。
（実施例 ２）
所望の金属パターンをリフトオフ法で形成する
場合、まず基板６上に所望のパターンをフオトレ
ジストの抜きパターン７で形成する（第７図）。
次にフオトレジストパターン７を形成した基板全
面に金属膜を均一に形成する（第８図）。この後、
フオトレジストパターン７を除去すれば、フオト
レジスト上の不要金属も同時に除去され所望の金
属パターン８が得られる（第９図）。本実施例で
は、このフオトレジストを除去するにあたり金属
膜を形成した基板を酢酸ｎブチルに浸漬しさらに
沸騰するまで加熱するのが望ましい。この状態で
３〜５分すれば、フオトレジストパターン７及び
その上の不要金属は除去され、残査物のない良好
な金属パターン８が得られる。
なお、実施例では酢酸ｎブチルで説明したが、
酢酸エステル系の有機溶剤を用いれば同様にフオ
トレジストを容易に除去できる。例えば、この例
として酢酸メチル、酢酸エチル等がある。酢酸エ
ステル系有機溶剤で硬化したフオトレジストが容
易に除去できるのは酢酸エステル分子がフオトレ
ジスト中へ入り込み、フオトレジストが膨油して
基板から剥離するからと考える。又、酢酸エステ
ル系有機溶剤にアセトン等の有機溶剤を混合した
溶液を用いても同様のことがいえる。
発明の効果
以上のように本発明は、酢酸ｎブチルに浸漬す
ることによりフオトレジストを除去することがで
き、さらに加熱することにより短時間で容易にフ
オトレジストを除去できるとう効果を得ることが
できる優れたフオトレジストの除去方法である。[Table] Although it is possible to completely remove the photoresist by plasma etching in an oxygen atmosphere, the process takes about 15 minutes and cannot be easily removed. Therefore, the present invention can easily remove photoresist in a shorter time than conventional methods. Although the embodiment described above is for an ion implantation process, the present invention is also suitable for removing hardened photoresist after an ion milling process or the like. (Example 2) When forming a desired metal pattern by the lift-off method, first the desired pattern is formed on the substrate 6 using a punched pattern 7 of photoresist (FIG. 7).
Next, a metal film is uniformly formed over the entire surface of the substrate on which the photoresist pattern 7 has been formed (FIG. 8). After this,
When photoresist pattern 7 is removed, unnecessary metal on the photoresist is also removed at the same time, resulting in a desired metal pattern 8 (FIG. 9). In this embodiment, in order to remove the photoresist, it is desirable to immerse the substrate on which the metal film is formed in n-butyl acetate and further heat it until it boils. If this state is maintained for 3 to 5 minutes, the photoresist pattern 7 and the unnecessary metal thereon will be removed, and a good metal pattern 8 without any residue will be obtained. Note that in the examples, n-butyl acetate was used, but
Similarly, photoresist can be easily removed using an acetate-based organic solvent. Examples include methyl acetate, ethyl acetate, and the like. The reason why photoresists cured with acetate-based organic solvents can be easily removed is thought to be because acetate molecules enter the photoresist, causing the photoresist to swell and peel off from the substrate. The same thing can be said even if a solution is used in which an acetate-based organic solvent is mixed with an organic solvent such as acetone. Effects of the Invention As described above, the present invention has the effect that photoresist can be removed by immersion in n-butyl acetate, and that photoresist can be easily removed in a short time by further heating. This is an excellent method for removing photoresist.
第１図〜第６図、第７図〜第９図はこの発明の
実施例のレジストパターン除去の工程図である。
１……半絶縁性GaAs基板、２……フオトレジ
スト、５……酢酸ｎブチル、６……基板、７……
フオトレジスト、８……金属。
FIGS. 1 to 6 and 7 to 9 are process diagrams for removing a resist pattern according to an embodiment of the present invention. 1... Semi-insulating GaAs substrate, 2... Photoresist, 5... n-butyl acetate, 6... Substrate, 7...
Photoresist, 8...metal.
Claims (1)
て、フオトレジストを除去することを特徴とする
フオトレジストの除去方法。 ２ 酢酸エステル系有機溶剤を含む溶液を加熱す
ることを特徴とする特許請求の範囲第１項記載の
フオトレジストの除去方法。 ３ 酢酸エステル系有機溶剤として酢酸ｎブチル
を用いることを特徴とする特許請求の範囲第１項
記載のフオトレジストの除去方法。 ４ フオトレジストパターンを形成した後、金属
膜を形成し、酢酸エステル系有機溶剤を含む溶液
にて前記レジストパターンを除去し、所望の領域
のみに前記金属膜を残存せしめることを特徴とす
るフオトレジストの除去方法。[Scope of Claims] 1. A method for removing a photoresist, which comprises removing the photoresist by immersing it in a solution containing an acetate-based organic solvent. 2. The photoresist removal method according to claim 1, which comprises heating a solution containing an acetate-based organic solvent. 3. The method for removing photoresist according to claim 1, characterized in that n-butyl acetate is used as the acetate-based organic solvent. 4. A photoresist characterized by forming a photoresist pattern, forming a metal film, and removing the resist pattern with a solution containing an acetate-based organic solvent, leaving the metal film only in desired areas. How to remove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57199214A JPS5988829A (en) | 1982-11-12 | 1982-11-12 | Removing method for photoresists |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57199214A JPS5988829A (en) | 1982-11-12 | 1982-11-12 | Removing method for photoresists |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5988829A JPS5988829A (en) | 1984-05-22 |
| JPH0113217B2 true JPH0113217B2 (en) | 1989-03-03 |
Family
ID=16404026
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57199214A Granted JPS5988829A (en) | 1982-11-12 | 1982-11-12 | Removing method for photoresists |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5988829A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030046868A (en) * | 2001-12-07 | 2003-06-18 | 주식회사 덕성 | Thinner for rinsing organic layer |
| CN121348678A (en) * | 2025-12-22 | 2026-01-16 | 合肥晶合集成电路股份有限公司 | Methods for removing photoresist |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS592043A (en) * | 1982-06-29 | 1984-01-07 | Fujitsu Ltd | Photoresist developing method |
-
1982
- 1982-11-12 JP JP57199214A patent/JPS5988829A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5988829A (en) | 1984-05-22 |
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