JPH01145160U - - Google Patents

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Publication number
JPH01145160U
JPH01145160U JP4129488U JP4129488U JPH01145160U JP H01145160 U JPH01145160 U JP H01145160U JP 4129488 U JP4129488 U JP 4129488U JP 4129488 U JP4129488 U JP 4129488U JP H01145160 U JPH01145160 U JP H01145160U
Authority
JP
Japan
Prior art keywords
laser beam
semiconductor substrate
semiconductor
growth layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4129488U
Other languages
English (en)
Other versions
JP2538450Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1988041294U priority Critical patent/JP2538450Y2/ja
Publication of JPH01145160U publication Critical patent/JPH01145160U/ja
Application granted granted Critical
Publication of JP2538450Y2 publication Critical patent/JP2538450Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【図面の簡単な説明】
第１図は本考案半導体レーザ装置の要部を示す
模式図、第２図は動作電流と光出力の出射部にお
ける温度依存性を示す特性図、第３図は半導体基
板の厚みと温度上昇の関係を示す特性図、である
。 １……ヒートシンク、２……半導体レーザビー
ムチツプ、３……半導体基板、４……成長層、６
ａ〜６ｃ……第１〜第３の出射部。

Claims (1)

    【実用新案登録請求の範囲】
  1. 半導体基板、該基板上に形成された成長層、該
    成長層の複数箇所に個別に設けられ各々独立して
    レーザビームを出射する出射部、を備えた半導体
    レーザビームチツプと、該レーザビームチツプを
    上記半導体基板側から保持するヒートシンクと、
    からなり、上記半導体基板の厚みを約７０μｍ以
    下としたことを特徴とする半導体レーザ装置。
JP1988041294U 1988-03-29 1988-03-29 半導体レーザ装置 Expired - Lifetime JP2538450Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1988041294U JP2538450Y2 (ja) 1988-03-29 1988-03-29 半導体レーザ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1988041294U JP2538450Y2 (ja) 1988-03-29 1988-03-29 半導体レーザ装置

Publications (2)

Publication Number Publication Date
JPH01145160U true JPH01145160U (ja) 1989-10-05
JP2538450Y2 JP2538450Y2 (ja) 1997-06-18

Family

ID=31267735

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1988041294U Expired - Lifetime JP2538450Y2 (ja) 1988-03-29 1988-03-29 半導体レーザ装置

Country Status (1)

Country Link
JP (1) JP2538450Y2 (ja)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5127076A (ja) * 1974-08-30 1976-03-06 Hitachi Ltd Handotaireezasochi
JPS6242592A (ja) * 1985-08-20 1987-02-24 Matsushita Electric Ind Co Ltd 半導体レ−ザアレイ装置およびその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5127076A (ja) * 1974-08-30 1976-03-06 Hitachi Ltd Handotaireezasochi
JPS6242592A (ja) * 1985-08-20 1987-02-24 Matsushita Electric Ind Co Ltd 半導体レ−ザアレイ装置およびその製造方法

Also Published As

Publication number Publication date
JP2538450Y2 (ja) 1997-06-18

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