JPH0114688B2 - - Google Patents

Info

Publication number
JPH0114688B2
JPH0114688B2 JP59146010A JP14601084A JPH0114688B2 JP H0114688 B2 JPH0114688 B2 JP H0114688B2 JP 59146010 A JP59146010 A JP 59146010A JP 14601084 A JP14601084 A JP 14601084A JP H0114688 B2 JPH0114688 B2 JP H0114688B2
Authority
JP
Japan
Prior art keywords
single crystal
layer
substrate
gaas
fluoride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59146010A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6126210A (ja
Inventor
Toshio Nonaka
Nagayasu Yamagishi
Masahiro Akyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP59146010A priority Critical patent/JPS6126210A/ja
Publication of JPS6126210A publication Critical patent/JPS6126210A/ja
Publication of JPH0114688B2 publication Critical patent/JPH0114688B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3211—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3248—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Recrystallisation Techniques (AREA)
JP59146010A 1984-07-16 1984-07-16 ＧａＡｓ半導体装置の製造方法 Granted JPS6126210A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59146010A JPS6126210A (ja) 1984-07-16 1984-07-16 ＧａＡｓ半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59146010A JPS6126210A (ja) 1984-07-16 1984-07-16 ＧａＡｓ半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6126210A JPS6126210A (ja) 1986-02-05
JPH0114688B2 true JPH0114688B2 (2) 1989-03-14

Family

ID=15398049

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59146010A Granted JPS6126210A (ja) 1984-07-16 1984-07-16 ＧａＡｓ半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6126210A (2)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2587372B2 (ja) * 1993-08-26 1997-03-05 九州日立マクセル株式会社 ヘアードライヤ

Also Published As

Publication number Publication date
JPS6126210A (ja) 1986-02-05

Similar Documents

Publication Publication Date Title
JPS6012724A (ja) 化合物半導体の成長方法
JPS5939790A (ja) 単結晶の製造方法
JPH0114688B2 (2)
JPH0475649B2 (2)
JPS6119116A (ja) 半導体装置の製造方法
JPS6126211A (ja) 半導体結晶成長方法
JPS58184720A (ja) 半導体膜の製造方法
JP2898360B2 (ja) 半導体膜の製造方法
JPS5945996A (ja) 半導体の気相成長方法
JPS59128292A (ja) 薄膜の結晶化方法
JPH03286520A (ja) 結晶性半導体薄膜の製造方法
JPS6379953A (ja) 単結晶薄膜の製造方法
JPS6091622A (ja) 半導体基板の製造方法
JPS60221385A (ja) 単結晶薄膜の製造方法
JP2532252B2 (ja) Ｓｏｉ基板の製造方法
JPS6126598A (ja) ゲルマニウム薄膜結晶の製造方法
JPS60235788A (ja) 単結晶膜の形成方法
JPS6219046B2 (2)
JPH03250620A (ja) 半導体装置の製造方法
JPS59162195A (ja) ガ−ネツト二層構造体ならびにその製造方法
JPH01162324A (ja) 半導体装置及びその製造方法
JPH0519976B2 (2)
JPS61206215A (ja) 半導体単結晶構造
Givargizov Single-Crystal Growth on Amorphous Substrates
JPS60154523A (ja) エピタキシヤル層の形成方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term