JPH01149103U - - Google Patents

Description

[Brief explanation of the drawing]

FIG. 1 is a perspective view showing a small monolithic FET phase shifter according to an embodiment of the present invention, and FIG. 2 is a perspective view showing a conventional monolithic FET phase shifter. 1 is a semiconductor substrate, 2 is a ground conductor, 3 is a main line, 4
is a loading line, 5 is a drain electrode, 6 is a gate electrode, 7 is a common source electrode, 8 is a gate connection line, 9
is a pair FET, 10 is a resistor, 11 is an MIM capacitor, 12 is a bias pad, 13 is a bias circuit, 14 is an air bridge, 15 is a MIM capacitor shorting pad, 16 is a common source electrode shorting pad, 17 is a drain electrode shorting 18 is a pad for shorting the drain electrode. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.

Claims (1)

[Scope of utility model registration request] It consists of a main line and a loading line made up of strip lines formed on a substrate substrate, and a plurality of field effect transistors having drain electrodes, gate electrodes and common source electrodes, resistors and capacitors formed on a semiconductor substrate. A field effect transistor phase shifter comprising a bias circuit comprising a bias circuit and means for applying a driving bias voltage to the gate electrode of the field effect transistor, characterized in that the strip lines are crossed using an air bridge. field-effect transistor phase shifter.