JPH0273823U

JPH0273823U -

Info

Publication number: JPH0273823U
Application number: JP15269288U
Authority: JP
Priority date: 1988-11-24
Filing date: 1988-11-24
Publication date: 1990-06-06

Description

[Brief explanation of drawings]

第１図はこの考案の一実施例の構成を示す接続
図、第２図はＦＥＴの簡略等価回路図、第３図は
従来のＰＩＮダイオードを用いた反射形定位相可
変減衰器の構成を示す接続図、第４図はＰＩＮダ
イオードの簡略等価回路である。図において１は９０度位相差ハイブリツト、２
は第１の電界効果トランジスタ、３は第２の電界
効果トランジスタ、４は第１のインダクタ、５は
第２のインダクタ、６はグランド、７は第１の抵
抗、８は第２の抵抗、９は第３の抵抗、１０は第
Ｎ＋１の抵抗、１１は第３の電界効果トランジス
タ、１２は第４の電界効果トランジスタ、１３は
第Ｎ＋３の電界効果トランジスタ、１４はドレイ
ンソース間抵抗、１５はドレインソース間容量、
１６は第１のＰＩＮダイオード、１７は第２のＰ
ＩＮダイオード、１８は接触抵抗、１９は接合抵
抗、２０は接合容量である。なお、図中同一符号
は同一または相当部分を示すものとする。 Figure 1 is a connection diagram showing the configuration of an embodiment of this invention, Figure 2 is a simplified equivalent circuit diagram of an FET, and Figure 3 is a configuration of a conventional reflective constant phase variable attenuator using a PIN diode. The connection diagram, FIG. 4, is a simplified equivalent circuit of a PIN diode. In the figure, 1 is a 90 degree phase difference hybrid, 2
is the first field effect transistor, 3 is the second field effect transistor, 4 is the first inductor, 5 is the second inductor, 6 is the ground, 7 is the first resistor, 8 is the second resistor, 9 is the third resistor, 10 is the N+1 resistor, 11 is the third field effect transistor, 12 is the fourth field effect transistor, 13 is the N+3 field effect transistor, 14 is the drain-source resistance, and 15 is the drain Source-to-source capacitance,
16 is the first PIN diode, 17 is the second P
18 is a contact resistance, 19 is a junction resistance, and 20 is a junction capacitance. Note that the same reference numerals in the figures indicate the same or corresponding parts.

Claims

[Scope of utility model registration request]

a 90 degree phase difference hybrid, a first field effect transistor whose drain electrode is connected to one of the two output terminals of the 90 degree phase difference hybrid and whose source electrode is grounded, and another output of the 90 degree phase difference hybrid. a second field effect transistor whose terminal and drain electrode are connected and whose source electrode is grounded; a first inductor connected between the drain electrode and the source electrode of the first field effect transistor; and the second field effect transistor. a reflective constant phase attenuator comprising a second inductor connected between the drain electrode and the source electrode of the effect transistor; and a first field effect transistor having one end connected to the gate electrodes of the first and second field effect transistors. from a group of N resistors each having one end connected to the drain electrode of the field effect transistor whose source is grounded and the other end connected to the gate electrode of the first and second field effect transistors. 1. A constant-phase digital variable attenuator, characterized in that a digital-to-analog conversion circuit is integrally formed on the GaAs substrate.