JPH01149303A - Method for fabricating vertically oriented molecule insulating layer - Google Patents

Method for fabricating vertically oriented molecule insulating layer

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Publication number
JPH01149303A
JPH01149303A JP62305820A JP30582087A JPH01149303A JP H01149303 A JPH01149303 A JP H01149303A JP 62305820 A JP62305820 A JP 62305820A JP 30582087 A JP30582087 A JP 30582087A JP H01149303 A JPH01149303 A JP H01149303A
Authority
JP
Japan
Prior art keywords
insulating layer
thermal conductivity
linear expansion
thickness direction
polymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62305820A
Other languages
Japanese (ja)
Inventor
Koichi Nakagawa
幸一 中川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
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Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP62305820A priority Critical patent/JPH01149303A/en
Publication of JPH01149303A publication Critical patent/JPH01149303A/en
Pending legal-status Critical Current

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  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Organic Insulating Materials (AREA)

Abstract

PURPOSE:To lessen the dielectric loss by filling the space between facing conductors requiring insulating layer with a polar monomer, applying electrostatic pressure between the conductors, polymerizing monomers, and by decreasing the coefficient of linear expansion in the thickness direction of the insulating layer as well as increasing the thermal conductivity. CONSTITUTION:The space between facing conductors requiring insulating layer is filled with polar monomer, which has large dipole moment but small after polymerization and which can produce high-molecular polymer having high crystallinity, and the monomer are polymerized under electrostatic field by applying electrostatic voltage between the mating conductors. Thus provides high-molecular insulating layer in which the molecule axis (c axis) in the crystal is oriented in the thickness direction of the insulating layer. This an insulating layer is obtained, which has small coefficient of linear expansion in the thickness direction, a large thermal conductivity, and small dielectric loss.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、絶縁層の厚さ方向の線膨張率が小さく、熱伝
導率が大きく、かつ誘電損失の小さい極低温用高分子絶
縁層の作製方法に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention provides a polymer insulating layer for cryogenic temperatures that has a small coefficient of linear expansion in the thickness direction of the insulating layer, a high thermal conductivity, and a small dielectric loss. Regarding the manufacturing method.

〔従来の技術〕[Conventional technology]

従来、極低温用の高分子絶縁材料としてはポリイミドが
広く使われている。これは、ポリイミドが耐熱性のみな
らず低温機械特性にも優れていることによるが、特に線
膨張率が2.0X10−”K″″にと通常の高分子材料
の線膨張率よシも一桁小さく、金属並の値を示すことに
よる。しかし、極低温デバイス用入出カケ−プルに見ら
れるように、このような低線膨張率のポリイミドを絶縁
材料に用いても、導体の銅の線膨張率(1,4x 1o
−G K−1)や接点基板のシリコンの線膨張率(7,
6X10−1に−1)とのわずかな線膨張率差が極低温
下では熱収縮差を生じ、接点障害を引き起こす原因とな
っている( P、ム、モスフビツツ(P。
Conventionally, polyimide has been widely used as a polymeric insulating material for cryogenic temperatures. This is because polyimide has excellent not only heat resistance but also low-temperature mechanical properties, and in particular, the linear expansion coefficient of polyimide is 2.0X10-"K", which is higher than that of ordinary polymer materials. However, as seen in input/output cables for cryogenic devices, even if polyimide with such a low coefficient of linear expansion is used as an insulating material, it will not work as well as the conductor copper wire. Expansion rate (1,4x 1o
-G K-1) and the linear expansion coefficient of silicon of the contact substrate (7,
The slight difference in linear expansion coefficient between 6X10-1 and -1) causes a difference in thermal contraction at extremely low temperatures, causing contact failure (P.

第25巻、第107頁、(f5’85))。極低温用の
絶縁材料としては、線膨張率が単に小さいだけではなく
、導体や基板の線膨張率と整合がとれるものでなければ
ならない。
Volume 25, page 107, (f5'85)). Insulating materials for cryogenic temperatures must not only have a low coefficient of linear expansion, but must also match the coefficient of linear expansion of conductors and substrates.

超伝導の応用は、高温超伝導セラミツ・クスの開発に伴
い液体ヘリウム温度(4,2K)から液体窒素温度(7
7K)へと高温化が図られ、ますます活発化するものと
思われるが、今後とも極低温下で行われることになろう
。このような超伝導体の絶縁材料としては熱歪低域のた
めに線膨張率が小さいことのみならず、熱伝導性が優れ
ていることが要求される。この熱伝導性に対する要求は
、何らかの異常によシ一部で超伝導状態が常伝導状態に
変わると急激に発熱し常伝導領域が拡大するが、このよ
うな現象を抑制するために発生した熱を素早く放熱する
必要があるためである。ポリイミドの熱伝導率(Qf1
0155W/、K)はポリエチレンやポリオキシメチレ
ンの熱伝導率(それぞれ(LOO55、[10057W
15K)の175〜172以下と極めて低く、優れた断
熱材であり、熱伝導性からは超伝導体の絶縁材料として
は好ましくない。
The application of superconductivity has increased from liquid helium temperature (4.2K) to liquid nitrogen temperature (7K) with the development of high-temperature superconducting ceramics.
It is expected that the temperature will be raised to 7K) and the activity will become even more active, but it will likely continue to be carried out at extremely low temperatures. Insulating materials for such superconductors are required not only to have a low coefficient of linear expansion in order to have low thermal strain, but also to have excellent thermal conductivity. This requirement for thermal conductivity is due to the fact that when some abnormality changes from a superconducting state to a normal conducting state, heat is suddenly generated and the normal conducting region expands. This is because it is necessary to dissipate heat quickly. Thermal conductivity of polyimide (Qf1
0155W/, K) is the thermal conductivity of polyethylene and polyoxymethylene ((LOO55, [10057W, respectively)
15K), which is extremely low at 175 to 172 or less, making it an excellent heat insulating material, but in terms of thermal conductivity, it is not preferred as an insulating material for superconductors.

このほか、ポリイミドはtan Jがn、ooa(10
1Hz、25℃)とポリエチレンの[LOOOlやポリ
オキシメチレンの(LOO5に比べても大きく、また、
吸湿率が2.7チ(24時間浸漬)、吸湿膨張率が2.
lX10″″I % RH−1と大きく、吸湿により寸
法が変化するなどの欠点がアシ、極低温用の絶縁材料と
して用いるには限界がある。
In addition, polyimide has tan J of n, ooa (10
1Hz, 25℃) and polyethylene [LOOOl] and polyoxymethylene (LOOO5).
Moisture absorption rate is 2.7 inches (immersed for 24 hours), moisture absorption expansion rate is 2.7 inches.
Due to its large size of 1×10″I% RH-1 and its size changing due to moisture absorption, its use as an insulating material for extremely low temperatures is limited.

超伝導の応用開発に伴い、ポリイミドに代わる低線膨張
率、高熱伝導率、低誘電損失の極低温用高分子絶縁材料
が求められている。
With the development of superconducting applications, there is a need for cryogenic polymer insulating materials with low coefficient of linear expansion, high thermal conductivity, and low dielectric loss to replace polyimide.

ポリエチレンやポリオキシメチレンなどの結晶性高分子
を延伸することKよシ、−軸方向に分子鎖が配向した高
分子材料を容易に得ることができる。このような−軸配
向高分子の延伸方向の線膨張率は延伸倍率と共に急速に
小さくなり、零から負の値へと変化し〔工1M、ワード
(工。
By stretching a crystalline polymer such as polyethylene or polyoxymethylene, a polymer material in which molecular chains are oriented in the -axis direction can be easily obtained. The coefficient of linear expansion in the stretching direction of such a -axis oriented polymer rapidly decreases with the stretching ratio and changes from zero to a negative value [Eng. 1M, Ward (Eng.).

M、wara)編、デイペロツプメンツ イン オリエ
ンテッド ポリマーズ−1(Developments
in 0rientea Polymers −1) 
、アプライド サイエンス(Appl、 set、 )
社、ロンドン(London)(1982))、延伸方
向の熱伝導率は延伸倍率とともに大きくなる(0.L、
チョイ(c、p、 ahoy)ほか、〔ジャーナル オ
ブ ポリマー サイエンス ポリマー フイジクス エ
テイション(J、 Polym、 8ci、 Poly
m、 Phys、 ?!11. )第18巻、第118
7頁(1980))。例えば、高密度ポリエチレンの線
膨張率(室温)は未延伸状態の1.2X10−’に″重
 から延伸倍率2倍で零、延伸倍率18倍では−1,2
X10−sK−1となる。熱伝導率(室温)は未延伸状
態のα0055 W/(WIKから延伸倍率25倍で[
115W/、にと大幅に大きくなる。ポリオキシメチレ
ンでは、線膨張率。
M, wara), Developments in Oriented Polymers-1
in 0rientea Polymers -1)
, Applied Science (Appl, set, )
Co., Ltd., London (1982)); the thermal conductivity in the stretching direction increases with the stretching ratio (0.L,
Choi (c, p, ahoy) et al., [Journal of Polymer Science Polymer Physics Edition (J, Polym, 8ci, Poly
m, Phys, ? ! 11. ) Volume 18, No. 118
7 (1980)). For example, the linear expansion coefficient (room temperature) of high-density polyethylene is 1.2X10-' in the unstretched state, zero at a stretch ratio of 2 times, and -1.2 at a stretch ratio of 18 times.
It becomes X10-sK-1. Thermal conductivity (room temperature) is α0055 W/(from WIK at a stretching ratio of 25 times) in the unstretched state [
It becomes significantly larger to 115W/. For polyoxymethylene, linear expansion coefficient.

(室温)は未延伸状態のaOX10″″sK″″1 か
ら延伸倍率8倍で零、延伸倍率20倍では−C0X10
−@に″1となる。熱伝導率(室温、)は未延伸状態の
CL OO57W/cvnKから延伸倍率8倍で103
W/cmKと大きくなる。しかし、延伸方向と直角の方
向の線膨張率は逆に延伸倍率と共に若干大きくなシ、延
伸方向と直角の方向の熱伝導率は小さくなる。したがっ
て、延伸配向高分子やその積層体により、延伸方向ある
いは面方向の線膨張率を小さく、シかも制御することが
でき、熱伝導率を大きくすることができるが、厚さ方向
の線膨張率は逆に大きく、熱伝導率は小さくなる。
(room temperature) is zero at a stretching ratio of 8 times from aOX10''sK''''1 in the unstretched state, and -C0X10 at a stretching ratio of 20 times.
-@ becomes ``1.Thermal conductivity (at room temperature) is 103 at a stretching ratio of 8 times from CLOO57W/cvnK in an unstretched state.
It becomes large as W/cmK. However, the coefficient of linear expansion in the direction perpendicular to the stretching direction slightly increases with the stretching ratio, and the thermal conductivity in the direction perpendicular to the stretching direction decreases. Therefore, by using a stretch-oriented polymer or a laminate thereof, it is possible to reduce the linear expansion coefficient in the stretching direction or in the plane direction, and also to control the thermal conductivity, but it is possible to increase the thermal conductivity. On the contrary, it increases, and the thermal conductivity decreases.

配向高分子のtanδにも異方性があり、ポリオキシメ
チレンに見られるように1分子鎖方向のtanδは分子
鎖方向と直角方向のtanδの約1/10  と小さく
なっている( A、タナ力(ム、 Tanaka)ほか
、ジャーナル オプ ポリマー サイエンス(J、 P
oxym、 sat、 ) A −2、第8巻、第15
85頁(1970))。このように、配向高分子では配
向方向によっては誘電損失の低減も可能となる。
The tan δ of oriented polymers also has anisotropy, and as seen in polyoxymethylene, the tan δ in the direction of one molecular chain is about 1/10 of the tan δ in the direction perpendicular to the molecular chain direction (A, tan δ). Tanaka et al., Journal of Polymer Science (J, P.
oxym, sat, ) A-2, Volume 8, No. 15
p. 85 (1970)). In this way, dielectric loss can be reduced depending on the orientation direction of the oriented polymer.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

極低温用の高分子絶縁材料としては、絶縁層の厚さ方向
の線膨張率も小さく、熱伝導率が犬きく、シかもtan
δが小さいことが望ましい。
As a polymer insulating material for extremely low temperatures, it has a small coefficient of linear expansion in the thickness direction of the insulating layer, a high thermal conductivity, and a high thermal conductivity.
It is desirable that δ is small.

このためKは、絶縁層の厚さ方向に分子鎖を配向させれ
ばよいが、これを実現する具体的手法がこれまで見出さ
れていなかった。
For this reason, it is sufficient for K to orient its molecular chains in the thickness direction of the insulating layer, but a specific method for realizing this has not been found so far.

本発明の目的は、絶縁層となる結晶性高分子の結晶内の
分子軸(C軸)が絶縁層の厚さ方向に配向することによ
り、絶縁層の厚さ方向の線膨張率が小さく、熱伝導率が
大きく、かつ誘電損失の小さい極低温用高分子絶縁層の
作製方法を提供することにある。
The purpose of the present invention is to orient the intracrystalline molecular axis (C axis) of the crystalline polymer forming the insulating layer in the thickness direction of the insulating layer, so that the coefficient of linear expansion in the thickness direction of the insulating layer is small. An object of the present invention is to provide a method for producing a polymer insulating layer for cryogenic temperatures that has high thermal conductivity and low dielectric loss.

〔問題点を解決するための手段〕[Means for solving problems]

本発明を概説すれば、本発明は垂直配向高分子絶縁層の
作製方法に関する発明であって、絶縁層を必要とする相
対する導体間に、モノマーの双極子モーメントは大きい
が、それを重合させた場合に、双極子モーメントは逆に
小さく、かつ結晶性の高い高分子重合体を生成すること
ができる極性モノ÷−を充てんし、該相対する導体間に
静電圧を加えることにより、静電場下で該モノマーを重
合させることを特徴とする。
To summarize the present invention, the present invention relates to a method for producing a vertically aligned polymer insulating layer. In this case, the dipole moment is conversely small and the electrostatic field can be reduced by filling the polar monomer ÷-, which can produce a high-crystalline polymer, and applying an electrostatic voltage between the opposing conductors. The monomer is polymerized below.

本発明は、絶縁層の厚さ方向に配向した高分子絶縁層が
得られる点が従来の技術と異なる。
The present invention differs from conventional techniques in that a polymer insulating layer oriented in the thickness direction of the insulating layer can be obtained.

極性上ツマ−としては、電場による配向を効果的に行う
ために双極子モーメントの大きいことが望ましい。例え
ば、アクリロニトリル(OH2、、、CI!ON )は
双極子モーメントが17.3Dと極めて大きく電場配向
に適した極性モノマーである。
It is desirable that the polar magnet has a large dipole moment in order to effectively achieve orientation by an electric field. For example, acrylonitrile (OH2, . . . CI!ON) is a polar monomer that has an extremely large dipole moment of 17.3D and is suitable for electric field alignment.

しかし、重合して得られるポリアクリロニトリルは結晶
性に乏しいため、目的とする低線膨張率、高熱伝導率、
低誘電損失は期待できない。
However, polyacrylonitrile obtained by polymerization has poor crystallinity, so it has the desired low coefficient of linear expansion, high thermal conductivity,
Low dielectric loss cannot be expected.

ポリフッ化ビニリデンは結晶化度が約50チと高く、そ
の原料モノマーである7ツ化ビニリデン(C馬−OF、
)の双極子モーメントは1. S 7 Dであり、静電
場下での重合により配向ポリ7ツ化ビニリデンの生成が
期待される。しかし、ポリフッ化ビニリデンは、圧電材
料として知られるように、結晶内で分子鎖が平面ジグザ
グ構造を七り、その結果大きな双極子モーメントをもち
、静電場下で電界方向く双極子の向きをそろえて配向す
る(ポーリング)。すなわち、静電場によシ分子軸(C
軸)は面方向に配向し得るが、厚さ方向には配向し得な
い。ポリオキシメチレンは、結晶内で分子鎖がヘリック
ス構造をとシ、双極子が互いに打消しろう念め静電場に
より配向することはない。また、結晶化度も7Dチ以上
と高く、その原料モノマーとなるホルムアルデヒド(O
IIEt−0)やトリオキサン(axo)sの双極子モ
ーメントはそれぞれZ2・7D%2.08Dと高く、電
場配向重合による配向高分子の生成に最も適した材料で
ある。このよう(、本発明に適する高分子材料は、その
モノマーの双極子モーメントが大きく、重合して得られ
る高分子の双極子モーメントは逆に小さく、シかも結晶
性の高い重合体である必要がある。
Polyvinylidene fluoride has a high crystallinity of about 50°, and its raw material monomer, vinylidene heptadide (C-OF,
) is 1. S 7 D, and it is expected that oriented polyvinylidene heptadide will be produced by polymerization under an electrostatic field. However, as polyvinylidene fluoride is known as a piezoelectric material, the molecular chains within the crystal form a planar zigzag structure, resulting in a large dipole moment and the ability to align the dipoles in the direction of the electric field under an electrostatic field. (poling). In other words, due to the electrostatic field, the molecular axis (C
The axis) may be oriented in the plane direction, but not in the thickness direction. In polyoxymethylene, the molecular chains have a helical structure within the crystal, and the dipoles cancel each other out, so they are not oriented by an electrostatic field. It also has a high crystallinity of 7D or more, and its raw material monomer formaldehyde (O
The dipole moments of IIEt-0) and trioxane (axo)s are as high as Z2.7D%2.08D, respectively, and they are the most suitable materials for producing oriented polymers by electric field orientation polymerization. In this way, a polymer material suitable for the present invention must have a high dipole moment of its monomer, a small dipole moment of the polymer obtained by polymerization, and a highly crystalline polymer. be.

ポリオキシメチレンの原料モノマーであるトリオキサン
やテトラオギサン(a40)+の単結晶に放射線(γ線
など)を照射することによシ、モノマーのb軸方向(双
極子の向き)K分子軸(C軸)が配向したポリオキシメ
チレンの結晶が生成することが知られている〔乙)1ヤ
シ(LHayashi )ほか、ジャーナル オプ ポ
リマーサイエンス(J、 Po1.ym、 Sci、 
) O、A A、第839頁(1965):ム、タナカ
(A、 Tanaka)ほか、ジャーナル オブ ポリ
マー サイエンス(J。
By irradiating a single crystal of trioxane or tetraogysan (a40)+, which is a raw material monomer for polyoxymethylene, with radiation (gamma rays, etc.), the monomer's b-axis direction (dipole direction) and K molecular axis (c-axis ) is known to produce polyoxymethylene crystals oriented [B) 1 Hayashi et al., Journal of Polymer Science (J, Po1.ym, Sci.
) O, AA, p. 839 (1965): Mu, Tanaka (A, Tanaka) et al., Journal of Polymer Science (J.

Polym 8ai、 )ム−2、第8巻、@1sas
頁(1970))。第1図にテトラオキシメチレン単結
晶のγ線重合時のモノマー及び生成高分子の配向状態を
示す。ポリオキシメチレンでは、モノマーの双極子の方
向に高分子の結晶内の分子軸(C軸)が配向する。した
がって、静電場下でモノマーを配向させ重合させれば、
電界方向に結晶内の分子軸(C軸)が配向した、すなわ
ち、厚さ方向く配向したポリオキシメチレンの絶縁層が
得られる。
Polym 8ai, )Mu-2, Volume 8, @1sas
(1970)). FIG. 1 shows the orientation state of monomers and produced polymers during gamma ray polymerization of a tetraoxymethylene single crystal. In polyoxymethylene, the molecular axis (C axis) within the polymer crystal is oriented in the direction of the dipole of the monomer. Therefore, if monomers are oriented and polymerized under an electrostatic field,
An insulating layer of polyoxymethylene in which the molecular axis (C axis) within the crystal is oriented in the direction of the electric field, that is, oriented in the thickness direction, is obtained.

電場による配向効果は双極子の熱エネルギーと電場によ
るエネルギーのバランスにより、配向度(coa m>
は次式のランジュバン関数で表される( F、デバイ(
P、 Debye ) 、ポーラ−%L/キュールス(
polar uoxecuxes )、ドーノクーパブ
リケーションズ インコーホレーテッド(Dover 
Pu’blicationa Inc、 ) (192
9) )。
The orientation effect due to the electric field is due to the balance between the thermal energy of the dipole and the energy due to the electric field, resulting in an increase in the degree of orientation (coa m>
is expressed by the Langevin function (F, Debye (
P, Debye), Polar-%L/Cuels (
polar uoxecuxes), Dover Publications, Inc.
Publication Inc., ) (192
9) ).

<aoa e ) ! coth x −x−” =s
 L (x)Xコル I!!/k T ここで、μは双極子モーメン)、llfは双極子にかか
る電界、kはボルツマン定数、Tは絶対温度である。こ
の関数は罵に対して始め115の勾配で直線的に増大し
、飽和傾向を示し表から完全配向に近づく。例えば、熱
エネルギーと電場によるエネルギーが等しい場合(x=
1)、< cos # ) wα5となる。この条件は
室温で1Dの双極子に約10 M’7/61Hの電界を
加えることKなる。双極子間に強い相互作用がない場合
は、この値がほぼ外部からかける電場の強さとなシ、通
常このような強い電場では材料の絶縁破壊が起こシ、実
際には実現できない。しかし、ポリフッ化ビニリデンの
ポーリングに見られるように、双極子間に強い相互作用
がおる場合には双極子に直接に加わる局所電場は高くな
り、絶縁破壊電圧以下の0.2〜(L 5 MV/、、
の外部電場でも充分配向させることができる。式から分
かるように、電場による配向効果を高めるためには熱エ
ネルギーを抑えるほどよい。すなわち、低温で電場配向
重合させる方が望ましいととKなる。また、低温になる
ほど絶縁破壊電圧も大きくなシより高電圧をかけること
ができる。
<aoa e)! coth x −x−”=s
L (x)X Col I! ! /k T where μ is the dipole moment), llf is the electric field applied to the dipole, k is Boltzmann's constant, and T is the absolute temperature. This function initially increases linearly with a slope of 115 for the curve, and shows a tendency to saturate, approaching perfect orientation from the table. For example, if the thermal energy and the energy due to the electric field are equal (x=
1), < cos # ) wα5. This condition amounts to applying an electric field of about 10 M'7/61H to a 1D dipole K at room temperature. If there is no strong interaction between dipoles, this value is approximately the same as the strength of the externally applied electric field, but such a strong electric field usually causes dielectric breakdown of the material, so it cannot be achieved in practice. However, as seen in the poling of polyvinylidene fluoride, when there is a strong interaction between dipoles, the local electric field directly applied to the dipoles becomes high, and the local electric field directly applied to the dipoles increases to 0.2~(L 5 MV /,,
It is possible to achieve sufficient orientation even with an external electric field of . As can be seen from the equation, it is better to suppress thermal energy in order to enhance the alignment effect caused by the electric field. That is, K indicates that it is more desirable to carry out electric field alignment polymerization at a low temperature. Furthermore, the lower the temperature, the higher the dielectric breakdown voltage, so a higher voltage can be applied.

ポリオキシメチレンのモノマーの一つであるホルムアル
デヒドは液体窒素温度(−196℃)でのγ線照射によ
り重合し、熱安定性のよい高分子量のポリオキシメチレ
/が高収率マ得られることが知られている〔Y、ツク(
Y、 Tsula )、ジャーナル オブ ポリマー 
サイエンス(J。
It is known that formaldehyde, one of the monomers of polyoxymethylene, can be polymerized by γ-ray irradiation at liquid nitrogen temperature (-196°C) to obtain high-yield polyoxymethylene with good thermal stability and high molecular weight. [Y, Tsuku (
Y, Tsula), Journal of Polymers
Science (J.

Polym 8ci、 )第49巻、第569頁(19
61)]。
Polym 8ci, ) Volume 49, Page 569 (19
61)].

重合はγ線照射でイオン化した4c+−o−によシホル
ムアルデヒドの融点(−92℃)近くノー118℃の固
相で進むとされている。ホルムアルデヒドはイオン化す
ることによシ双極子モーメントは約67)と大きくなシ
、シかも一118℃の低温で重合が進むため、電場によ
る配向効果が大きい。第2図にホルムアルデヒドの静電
場下でのγ線固相重合時のモノマー及び生成高分子の配
向状態を示す。これに対し、テトラオキシメチレンは双
極子モーメントが約2Dと小さく、80〜100℃の高
温でγ線固相重合するため、電場配向効果は小さい。な
お、放射線重合は無触媒重合のため極性低分子不純物の
混入が防止でき、誘電損失の低減に効果的な重合法であ
る。
Polymerization is said to proceed in a solid phase at 118°C, near the melting point (-92°C) of 4c+-o-cyformaldehyde ionized by γ-ray irradiation. When formaldehyde is ionized, it has a large dipole moment of approximately 67).Since polymerization proceeds at a low temperature of 118°C, the orientation effect due to the electric field is large. FIG. 2 shows the orientation state of monomers and produced polymers during γ-ray solid phase polymerization under an electrostatic field of formaldehyde. On the other hand, tetraoxymethylene has a small dipole moment of about 2D and undergoes γ-ray solid phase polymerization at a high temperature of 80 to 100°C, so the electric field alignment effect is small. Note that since radiation polymerization is non-catalytic polymerization, it is possible to prevent the contamination of polar low-molecular impurities and is an effective polymerization method for reducing dielectric loss.

〔実施例〕〔Example〕

以下、本発明を実施例により更に具体的に説明するが、
本発明はこれら実施例に限定されない。
Hereinafter, the present invention will be explained in more detail with reference to Examples.
The invention is not limited to these examples.

第3図にホルムアルデヒドの電場配向放射線固相重合の
実施例を示す。すなわち、第3図はホルムアルデヒドの
電場配向放射線固相重合の1実施例で使用する装置の概
要図であシ、符号1は重合管、2は真空コック、5は/
1−メチツクシール、4はリード線、5は電極セル、6
はホルムアルデヒドを意味する。市販の粉末状パラホル
ムアルデヒドの熱分解により生成したホルムアルデヒド
ガスをモレキュラシーブを充てんしたドライカラムに通
し乾燥し、あらかじめ五酸化リンを入れた耐圧ガラス容
器中に一78℃(ドライアイス−エタノール)で液化採
取した。重合管1には、平行平板状のガラスの中央部の
相対する面に透明電極を付けた電極間隔10μ愼の電極
セル5を入れ、電極セル5はハーメチックシール3、リ
ード線4を介して外部より静電圧を加えられるようにな
っている。脱水精製したホルムアルデヒドを一78℃で
重合管1に真空コック2を介して真空蒸留により電極セ
ル5の下部が液化ホルムアルデヒドに浸る程度に充てん
した。表面張力によシミ極の間隙は液化ホルムアルデヒ
ドで満たされる。この状態で静電圧5oon(電界(L
 5 MY15@ )をかけたままで重合管1を液体窒
素(−196℃)で冷却し、ホルムアルデヒドを固化さ
せた。γ線照射は00“Oを用い、まず線量率5X10
’只/hで一196℃の固相で静電圧をかけたままで5
0分行った。次いで、静電圧をかけたままで、γ線照射
を中断し、重合管1を液体窒素の液面上に引上げた状態
で更に同一線量率で15時間照射を続け、静電圧をかけ
た状態で計4.65X10’R照射した。このような操
作では、重合管1は室温まで徐々に昇温するため、固相
重合が開始するホルムアルデヒドの融点近傍で反応熱に
よりホルムアルデヒドが急激に気化することはなく、は
ぼ100チの収率でポリオキシメチレンが得られた。
FIG. 3 shows an example of electric field oriented radiation solid phase polymerization of formaldehyde. That is, FIG. 3 is a schematic diagram of an apparatus used in one example of electric field oriented radiation solid phase polymerization of formaldehyde, where 1 is a polymerization tube, 2 is a vacuum cock, and 5 is a /
1 - mesh seal, 4 is lead wire, 5 is electrode cell, 6
means formaldehyde. Formaldehyde gas generated by thermal decomposition of commercially available powdered paraformaldehyde is passed through a dry column filled with molecular sieves, dried, and liquefied and collected at -78°C (dry ice - ethanol) in a pressure-resistant glass container containing phosphorus pentoxide in advance. did. Into the polymerization tube 1 is placed an electrode cell 5 in which transparent electrodes are attached to opposite sides of the central part of a parallel plate-shaped glass, with an electrode spacing of 10 μm. It is now possible to apply more static voltage. Dehydrated and purified formaldehyde was filled into the polymerization tube 1 at -78° C. via the vacuum cock 2 by vacuum distillation to such an extent that the lower part of the electrode cell 5 was immersed in the liquefied formaldehyde. Due to surface tension, the gap between the stain electrodes is filled with liquefied formaldehyde. In this state, a static voltage of 5oon (electric field (L)
The polymerization tube 1 was cooled with liquid nitrogen (-196° C.) with the tube still covered with 5 MY15@) to solidify formaldehyde. For γ-ray irradiation, use 00"O, first at a dose rate of 5X10
'Only 196°C in solid phase at 50°C/h while applying electrostatic voltage.
I went for 0 minutes. Next, with the electrostatic voltage applied, the γ-ray irradiation was interrupted, and with the polymerization tube 1 raised above the liquid nitrogen level, irradiation was continued for another 15 hours at the same dose rate, and the measurement was carried out with the electrostatic voltage applied. 4.65X10'R irradiation was performed. In such an operation, the temperature of the polymerization tube 1 is gradually raised to room temperature, so formaldehyde is not rapidly vaporized due to reaction heat near the melting point of formaldehyde at which solid phase polymerization begins, and the yield is approximately 100%. Polyoxymethylene was obtained.

このようにして透明電極の間隙に得られたポリオキシメ
チレンの配向状態は透明電極板面の垂直方向からの複屈
折観察により定性的に調べた。透明電極が付いていない
電極セルの端の部分ではランダムに配向した針状晶の集
合による複屈折現象が見られたが、透明電極を付けた電
極セルの中央の部分で−は複屈折現象は見られず、結晶
内の分子軸(C軸)が電極板面に垂直に配向しているこ
とが分かった。
The orientation state of polyoxymethylene thus obtained in the gap between the transparent electrodes was qualitatively investigated by birefringence observation from the direction perpendicular to the surface of the transparent electrode plate. A birefringence phenomenon due to a collection of randomly oriented needle crystals was observed at the edge of the electrode cell without a transparent electrode, but no birefringence was observed at the center of the electrode cell with a transparent electrode. It was found that the molecular axis (C axis) within the crystal was oriented perpendicular to the electrode plate surface.

この絶縁層の熱伝導率はα05W/、に、線膨張率は零
、tanδはlX10−”(101Hz、25℃)であ
った。
The thermal conductivity of this insulating layer was α05 W/, the coefficient of linear expansion was zero, and the tan δ was 1×10−” (101 Hz, 25° C.).

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明では絶縁層を必要とする相
対する導体間に充てんした極性モノマーを、相対する導
体間に静電圧を加えることにより、静電場下で重合する
ことにより、絶縁層の厚さ方向に結晶内の分子軸(、c
軸)が配向した高分子絶縁層が得られる。この結果、絶
縁層の厚さ方向の線膨張率が小さく、熱伝導率が大きく
、かつ誘電損失の小さい極低温用高分子絶縁層が得られ
る利点がある。このような厚さ方向の線膨張率が小さく
、熱伝導率が大きく、かつ誘電損失の小さい高分子材料
は超伝導応用関連のe、縁材料として使用すれば効果的
である。
As explained above, in the present invention, the polar monomer filled between opposing conductors that require an insulating layer is polymerized under an electrostatic field by applying an electrostatic voltage between the opposing conductors, thereby forming an insulating layer. The molecular axis within the crystal (,c
A polymeric insulating layer in which the axes) are oriented is obtained. As a result, there is an advantage that a cryogenic polymer insulating layer having a small coefficient of linear expansion in the thickness direction of the insulating layer, a high thermal conductivity, and a small dielectric loss can be obtained. Such a polymeric material having a small coefficient of linear expansion in the thickness direction, a large thermal conductivity, and a small dielectric loss is effective if used as an edge material for superconducting applications.

特に厚さ方向の線膨張率が小さく、厚さ方向の熱伝導率
が大きいことが強く要求される超伝導マグネットの絶縁
層に用いればクエンチ現象が抑制されるので有効である
。また、厚さ方向の誘電損失が小さく厚さ方向の熱伝導
率が大きくしかも低線膨張率であることが要求される超
伝導マイクロストリップ線路や超伏導電カケープルの絶
縁層や、低線膨張率で厚さ方向の熱伝導率が大きいこと
が要求される超伝導入出カケ−プルの絶縁層などに用い
れば効果的である。
In particular, it is effective when used in the insulating layer of a superconducting magnet, which is strongly required to have a small coefficient of linear expansion in the thickness direction and a high thermal conductivity in the thickness direction, since the quench phenomenon can be suppressed. In addition, the insulating layers of superconducting microstrip lines and superconducting cables, which require low dielectric loss in the thickness direction, high thermal conductivity in the thickness direction, and low linear expansion coefficient, and low linear expansion coefficient. It is effective if used as an insulating layer of a superconducting lead-out cable, which requires high thermal conductivity in the thickness direction.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はテトラオキシメチレン単結晶のγ線重合時のモ
ノマー及び生成高分子の配向状態を示す図、第2図はホ
ルムアルデヒドの静電場下でのγ線固相重合時のモノマ
ー及び生成高分子の配向状態を示す図、第3図はホルム
アルデヒドの電場配向放射線固相重合の1実施例で使用
する装置の概要図である。 1:重合管、2:真空コック、3:ハーメチックシール
、4:リード線、S:電極セル、6:ホルムアルデヒド 特許出願人  日本電信電話株式会社
Figure 1 shows the orientation state of monomers and produced polymers during γ-ray polymerization of tetraoxymethylene single crystals, and Figure 2 shows monomers and produced polymers during γ-ray solid-state polymerization under formaldehyde electrostatic field. FIG. 3 is a schematic diagram of an apparatus used in one example of electric field oriented radiation solid phase polymerization of formaldehyde. 1: Polymer tube, 2: Vacuum cock, 3: Hermetic seal, 4: Lead wire, S: Electrode cell, 6: Formaldehyde patent applicant Nippon Telegraph and Telephone Corporation

Claims (2)

【特許請求の範囲】[Claims] 1.絶縁層を必要とする相対する導体間に、モノマーの
双極子モーメントは大きいが、それを重合させた場合に
、双極子モーメントは逆に小さく、かつ結晶性の高い高
分子重合体を生成することができる極性モノマーを充て
んし、該相対する導体間に静電圧を加えることにより、
静電場下で該モノマーを重合させることを特徴とする垂
直配向高分子絶縁層の作製方法。
1. The dipole moment of a monomer is large between opposing conductors that require an insulating layer, but when it is polymerized, a polymer with a small dipole moment and high crystallinity is produced. By filling it with a polar monomer that can produce
A method for producing a vertically oriented polymer insulating layer, comprising polymerizing the monomer under an electrostatic field.
2.該絶縁層となる高分子重合体がポリオキシメチレン
である特許請求の範囲第1項記載の垂直配向高分子絶縁
層の作製方法。
2. 2. The method for producing a vertically aligned polymeric insulating layer according to claim 1, wherein the polymer forming the insulating layer is polyoxymethylene.
JP62305820A 1987-12-04 1987-12-04 Method for fabricating vertically oriented molecule insulating layer Pending JPH01149303A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62305820A JPH01149303A (en) 1987-12-04 1987-12-04 Method for fabricating vertically oriented molecule insulating layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62305820A JPH01149303A (en) 1987-12-04 1987-12-04 Method for fabricating vertically oriented molecule insulating layer

Publications (1)

Publication Number Publication Date
JPH01149303A true JPH01149303A (en) 1989-06-12

Family

ID=17949765

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62305820A Pending JPH01149303A (en) 1987-12-04 1987-12-04 Method for fabricating vertically oriented molecule insulating layer

Country Status (1)

Country Link
JP (1) JPH01149303A (en)

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Publication number Priority date Publication date Assignee Title
US6261481B1 (en) * 1998-03-19 2001-07-17 Hitachi, Ltd Insulating composition
US7109288B2 (en) 2001-05-18 2006-09-19 Hitachi, Ltd. Cured thermosetting resin product
WO2010050202A1 (en) 2008-10-30 2010-05-06 株式会社カネカ High thermal conductivity thermoplastic resin composition and thermoplastic resin
US8637630B2 (en) 2010-04-19 2014-01-28 Kaneka Corporation Thermoplastic resin with high thermal conductivity
US8921507B2 (en) 2010-04-19 2014-12-30 Kaneka Corporation Thermoplastic resin with high thermal conductivity
US9234095B2 (en) 2009-09-16 2016-01-12 Kaneka Corporation Thermally-conductive organic additive, resin composition, and cured product

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6261481B1 (en) * 1998-03-19 2001-07-17 Hitachi, Ltd Insulating composition
US7109288B2 (en) 2001-05-18 2006-09-19 Hitachi, Ltd. Cured thermosetting resin product
WO2010050202A1 (en) 2008-10-30 2010-05-06 株式会社カネカ High thermal conductivity thermoplastic resin composition and thermoplastic resin
US8946335B2 (en) 2008-10-30 2015-02-03 Kaneka Corporation Highly thermally conductive thermoplastic resin composition and thermoplastic resin
US9234095B2 (en) 2009-09-16 2016-01-12 Kaneka Corporation Thermally-conductive organic additive, resin composition, and cured product
US8637630B2 (en) 2010-04-19 2014-01-28 Kaneka Corporation Thermoplastic resin with high thermal conductivity
US8921507B2 (en) 2010-04-19 2014-12-30 Kaneka Corporation Thermoplastic resin with high thermal conductivity

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