JPH01149471U - - Google Patents
Info
- Publication number
- JPH01149471U JPH01149471U JP4493988U JP4493988U JPH01149471U JP H01149471 U JPH01149471 U JP H01149471U JP 4493988 U JP4493988 U JP 4493988U JP 4493988 U JP4493988 U JP 4493988U JP H01149471 U JPH01149471 U JP H01149471U
- Authority
- JP
- Japan
- Prior art keywords
- heater
- side wall
- heating
- single crystal
- semiconductor single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000005192 partition Methods 0.000 claims description 2
- 230000005855 radiation Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 239000002994 raw material Substances 0.000 claims 2
- 230000017525 heat dissipation Effects 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000003708 ampul Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
第１図は本考案の半導体単結晶製造用加熱炉の
一実施例を示す断面図、第２図、第３図は固液界
面状況説明図、第４図は従来の加熱炉の断面図で
ある。
１１：ボート、１２：ＧａＡｓ融液、１３：石
英アンプル、１６：底部ヒータ、１７，１７′：
側壁ヒータ、１８，１８′：上部ヒータ、１９：
放熱孔、２０，２１，２２，２３：仕切板。
Fig. 1 is a cross-sectional view showing an embodiment of the heating furnace for producing semiconductor single crystals of the present invention, Figs. 2 and 3 are explanatory diagrams of solid-liquid interface conditions, and Fig. 4 is a cross-sectional view of a conventional heating furnace. be. 11: Boat, 12: GaAs melt, 13: Quartz ampoule, 16: Bottom heater, 17, 17':
Side wall heater, 18, 18': Upper heater, 19:
Heat radiation holes, 20, 21, 22, 23: partition plate.
Claims (1)
ボートの底部を主として加熱する底部用ヒータと
、側壁を主に加熱する側壁用ヒータと、前記ボー
ト上方から前記原料融液の上表面を主として加熱
する上部用ヒータとに分割され、その最上部に放
熱手段を具えて前記半導体単結晶を加熱、育成す
る横型ボート式の半導体単結晶製造用加熱炉にお
いて、前記側壁加熱用ヒータと、前記上部用ヒー
タとの間、および前記上部用ヒータと前記放熱手
段との間に、各ヒータより放射される放射熱を遮
断する仕切板がそれぞれ設けてあることを特徴と
する半導体単結晶製造用加熱炉。 A bottom heater that primarily heats the bottom of a boat containing a raw material melt constituting a semiconductor single crystal, a side wall heater that mainly heats a side wall, and a side wall heater that primarily heats the upper surface of the raw material melt from above the boat. In a horizontal boat-type semiconductor single crystal manufacturing heating furnace, which is divided into a heater for heating the side wall and a heater for heating the upper part, the heater for heating the side wall and the heater for the upper part are equipped with a heat dissipation means at the top of the horizontal boat type heating furnace for heating and growing the semiconductor single crystal. A heating furnace for manufacturing a semiconductor single crystal, characterized in that partition plates are provided between the heater and between the upper heater and the heat radiation means to block radiant heat emitted from each heater.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4493988U JPH01149471U (en) | 1988-04-01 | 1988-04-01 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4493988U JPH01149471U (en) | 1988-04-01 | 1988-04-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01149471U true JPH01149471U (en) | 1989-10-17 |
Family
ID=31271272
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4493988U Pending JPH01149471U (en) | 1988-04-01 | 1988-04-01 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01149471U (en) |
-
1988
- 1988-04-01 JP JP4493988U patent/JPH01149471U/ja active Pending
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