JPH0194467U - - Google Patents
Info
- Publication number
- JPH0194467U JPH0194467U JP19111887U JP19111887U JPH0194467U JP H0194467 U JPH0194467 U JP H0194467U JP 19111887 U JP19111887 U JP 19111887U JP 19111887 U JP19111887 U JP 19111887U JP H0194467 U JPH0194467 U JP H0194467U
- Authority
- JP
- Japan
- Prior art keywords
- heating means
- side wall
- heating
- quartz boat
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims description 11
- 239000010453 quartz Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 9
- 238000004519 manufacturing process Methods 0.000 claims 4
- 238000001816 cooling Methods 0.000 claims 1
- 239000002994 raw material Substances 0.000 claims 1
- 239000011343 solid material Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000003708 ampul Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
第１図は本考案の一実施例を示す説明図、第２
図は本考案によつて成長された単結晶の固液界面
形状を示す説明図、第３図は従来の結晶成長にお
ける固液界面形状を示す説明図。
符号の説明、１…ＧａＡｓ結晶、２…ＧａＡｓ
融液、３…石英ボート、４…アンプル支持台、５
…石英アンプル、６…均熱管、７…放熱孔、８…
ヒータ線、９…断熱材、１０ａ，１０ｂ…結晶表
面部加熱ヒータ、１１ａ，１１ｂ…ボート側壁部
加熱ヒータ、１２…ボード底部加熱ヒータ。
Fig. 1 is an explanatory diagram showing one embodiment of the present invention;
The figure is an explanatory diagram showing the solid-liquid interface shape of a single crystal grown by the present invention, and FIG. 3 is an explanatory diagram showing the solid-liquid interface shape in conventional crystal growth. Explanation of symbols, 1...GaAs crystal, 2...GaAs
Melt, 3... Quartz boat, 4... Ampoule support, 5
...Quartz ampoule, 6...Soaking tube, 7...Radiation hole, 8...
Heater wire, 9... Insulating material, 10a, 10b... Crystal surface heater, 11a, 11b... Boat side wall heater, 12... Board bottom heater.
Claims (1)
ボートを電気炉内に配置し、該電気炉内によつて
加熱しながら固液界面の温度を制御することによ
り単結晶を製造する単結晶製造装置において、 前記石英ボート底部を加熱する底部加熱手段と
、前記石英ボート側壁を加熱する側壁加熱手段と
、結晶表面部を加熱する表面部加熱手段を前記固
液界面の外周に環状に配置した多分割加熱手段を
有し、 前記側壁加熱手段が前記石英ボートの側壁の最
上部と同じ位置レベルを有することを特徴とする
単結晶製造装置。 (2) 前記表面部加熱手段がその中央部に放熱孔
あるいは冷却手段を有する実用新案登録請求の範
囲第１項記載の単結晶製造装置。[Claims for Utility Model Registration] (1) A quartz boat containing a single crystal seed crystal and raw materials is placed in an electric furnace, and the temperature of the solid-liquid interface is controlled while being heated by the electric furnace. In the single crystal manufacturing apparatus for manufacturing a single crystal, a bottom heating means for heating the bottom of the quartz boat, a side wall heating means for heating the side wall of the quartz boat, and a surface heating means for heating the surface of the crystal are connected to the solid material. 1. A single-crystal manufacturing apparatus, comprising: multi-divided heating means arranged in an annular manner around the outer periphery of the liquid surface, wherein the side wall heating means has the same positional level as the top of the side wall of the quartz boat. (2) The single crystal manufacturing apparatus according to claim 1, wherein the surface heating means has a radiation hole or a cooling means in the center thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19111887U JPH0449185Y2 (en) | 1987-12-16 | 1987-12-16 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19111887U JPH0449185Y2 (en) | 1987-12-16 | 1987-12-16 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0194467U true JPH0194467U (en) | 1989-06-21 |
| JPH0449185Y2 JPH0449185Y2 (en) | 1992-11-19 |
Family
ID=31482044
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19111887U Expired JPH0449185Y2 (en) | 1987-12-16 | 1987-12-16 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0449185Y2 (en) |
-
1987
- 1987-12-16 JP JP19111887U patent/JPH0449185Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0449185Y2 (en) | 1992-11-19 |
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