JPH01156574U - - Google Patents
Info
- Publication number
- JPH01156574U JPH01156574U JP5499088U JP5499088U JPH01156574U JP H01156574 U JPH01156574 U JP H01156574U JP 5499088 U JP5499088 U JP 5499088U JP 5499088 U JP5499088 U JP 5499088U JP H01156574 U JPH01156574 U JP H01156574U
- Authority
- JP
- Japan
- Prior art keywords
- layer
- emitting device
- semiconductor light
- cladding layer
- upper cladding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005253 cladding Methods 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 6
- 230000000903 blocking effect Effects 0.000 claims description 2
Description
第１図はこの考案の一実施例による半導体発光
装置の断面図、第２図、第３図はこの考案の他の
実施例を示す半導体発光装置の断面図、第４図は
従来の半導体発光装置の断面図である。
図において、１はＩｎＧａＡｓＰ活性層、２は
Ｐ―ＩｎＰ上クラツド層、３はｎ―ＩｎＰ下クラ
ツド層、４はｉ―ＩｎＰ電流ブロツク層、５はＰ
―ＩｎＧａＡｓＰコンタクト層、６はｎ―ＩｎＰ
層（領域）、７はＰ―ＩｎＰ層（領域）、８はＰ
―電極、９はｎ―電極を示す。なお、図中、同一
符号は同一、または相当部分を示す。
FIG. 1 is a sectional view of a semiconductor light emitting device according to one embodiment of this invention, FIGS. 2 and 3 are sectional views of a semiconductor light emitting device showing other embodiments of this invention, and FIG. 4 is a conventional semiconductor light emitting device. FIG. 2 is a cross-sectional view of the device. In the figure, 1 is an InGaAsP active layer, 2 is a P-InP upper cladding layer, 3 is an n-InP lower cladding layer, 4 is an i-InP current blocking layer, and 5 is a P-InP cladding layer.
-InGaAsP contact layer, 6 is n-InP
layer (region), 7 is P-InP layer (region), 8 is P
-electrode, 9 indicates an n-electrode. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.
Claims (1)
を埋め込むための半絶縁性の電流ブロツク層から
成る半導体発光装置において、上クラツド層、下
クラツド層に隣接して、その極性と異なる導電型
の領域をそれぞれ形成し、それらの接合がブロツ
ク層に隣接した所にある半導体発光装置。 In a semiconductor light emitting device consisting of an upper cladding layer, an active layer, a lower cladding layer, and a semi-insulating current blocking layer for embedding them, a region adjacent to the upper cladding layer and the lower cladding layer and having a conductivity type different from their polarity. A semiconductor light-emitting device in which a semiconductor light-emitting device is formed in which a block layer is formed, and the junction thereof is adjacent to a block layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5499088U JPH01156574U (en) | 1988-04-21 | 1988-04-21 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5499088U JPH01156574U (en) | 1988-04-21 | 1988-04-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01156574U true JPH01156574U (en) | 1989-10-27 |
Family
ID=31280898
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5499088U Pending JPH01156574U (en) | 1988-04-21 | 1988-04-21 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01156574U (en) |
-
1988
- 1988-04-21 JP JP5499088U patent/JPH01156574U/ja active Pending