JPH01165165A - switching element - Google Patents
switching elementInfo
- Publication number
- JPH01165165A JPH01165165A JP62324319A JP32431987A JPH01165165A JP H01165165 A JPH01165165 A JP H01165165A JP 62324319 A JP62324319 A JP 62324319A JP 32431987 A JP32431987 A JP 32431987A JP H01165165 A JPH01165165 A JP H01165165A
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- JP
- Japan
- Prior art keywords
- film
- substrate
- monomolecular
- layer
- switching
- Prior art date
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Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔発明の分野〕
本発明は高分子絶縁層を有するMIM素子に関し、該高
分子絶縁層が周期的な層構造を有することを特徴とした
MIM構造スイッチング素子に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of the Invention] The present invention relates to an MIM device having a polymer insulating layer, and relates to an MIM structure switching device characterized in that the polymer insulating layer has a periodic layer structure.
最近有機分子の機能性を電子デバイスなどに応用しよう
とする分子エレクトロニクスに対する関心が高まってお
り、分子電子デバイスの構築技術の一つとみられるラン
グミュア−ブロジェット膜(LB膜)についての研究が
活発化してきている。Recently, interest in molecular electronics, which seeks to apply the functionality of organic molecules to electronic devices, has increased, and research on Langmuir-Blodgett films (LB films), which is considered to be one of the construction technologies for molecular electronic devices, has become active. ing.
LB膜は有機分子を規則正しく1分子層ずつ積層したも
ので、膜厚の制御は分子長の単位で行うことができ、−
様で均質な超薄膜を形成できることからこれを絶縁膜と
して使う多(の試みが行われてきた。例えば、(G、L
、Larkins et al Th1nSol
id films 99.1983)金属・絶縁体
・金属(MIM)構造のトンネル接合素子(G、L、L
arkinset al著「エレクトロニ゛ンクス拳し
ターズJ (ElectronicsLetters
)の「シン・ソリッド・フイルムズ」(Thin 5
olid Films)第99巻(1983年)〕や
金属・絶縁体・半導体(Mis)構造の発光素子[G、
G、Roberts et al著「エレクトロニ
ツクス拳しターズJ (Electronics L
etters)第20巻、489頁(1984年)〕あ
るいはスイッチング素子(N、J、Thomas e
t al著「エレクトロニクス・レターズJ (El
ect’ronics Letters)第20巻、
838頁(1984年)〕がある。The LB film is made by laminating organic molecules one molecular layer at a time, and the film thickness can be controlled in units of molecular length.
Many attempts have been made to use this as an insulating film because it is possible to form a homogeneous ultra-thin film.For example, (G, L
, Larkins et al Th1nSol
id films 99.1983) Metal-insulator-metal (MIM) structure tunnel junction device (G, L, L
“Electronics Letters J” by Arkinset al.
)'s "Thin Solid Films" (Thin 5
99 (1983)] and light-emitting elements with metal-insulator-semiconductor (Mis) structures [G,
"Electronics Fist J" by Roberts et al.
20, p. 489 (1984)] or switching elements (N., J., Thomas E.
Electronics Letters J (El.
ect'ronics Letters) Volume 20,
838 pages (1984)].
これら一連の研究によって素子特性の検討がされている
が、未だ素子ごとの特性のバラツキ、経時変化など再現
性と安定性の欠如は未解決の問題として残った。Although device characteristics have been investigated through a series of these studies, the lack of reproducibility and stability, such as variations in characteristics between devices and changes over time, remain unsolved problems.
従来、上記の如き検討は取扱いが比較的容易な脂肪酸の
LB膜を中心に進められてきた。しかし最近これまで劣
るとされていた耐熱性、機械強度に対してもこれを克服
した有機材料が次々に生まれている。Conventionally, the above studies have focused on fatty acid LB membranes, which are relatively easy to handle. However, recently, organic materials have been created one after another that overcome heat resistance and mechanical strength, which were previously thought to be inferior.
我々はこれらの材料を用いたLB膜を絶縁体として用い
て再現性と安定性及び耐久性にすぐれたMIM素子を作
製すべく鋭意研究の結果、従来のMIM素子にはない、
全く新しいスイッチング現象を発現するMIM素子を発
明するに至った。即ち本発明によって極めて信頼性にす
ぐれたメモリー機能を有するスイッチングの提供が可能
になった。We have conducted extensive research to create MIM devices with excellent reproducibility, stability, and durability using LB films made of these materials as insulators, and have discovered that conventional MIM devices do not.
We have now invented an MIM device that exhibits a completely new switching phenomenon. That is, the present invention has made it possible to provide switching having extremely reliable memory functions.
本発明は比較的大きいπ(パイ)準位をもっ群とのび(
シグマ)電子準位をもつ群とを有する高分子を周期的に
積層し、電気的ポテンシャルの周期構造を有する有機絶
縁体中において周期方向と平行な方向に電流を流すこと
により、従来公知のMIM素子とは異なる非線型電流電
圧特性が発現することを期待し、かつその実現を図った
ものである。さらに、係る特性を用いたスイッチングメ
モリー機能を有する新規MIM素子を実現したものであ
る。The present invention can extend the relatively large π (pi) level to a larger group (
Conventionally known MIM We expected that nonlinear current-voltage characteristics different from those of the device would emerge, and we aimed to realize this. Furthermore, a new MIM element having a switching memory function using such characteristics has been realized.
一般に有機材料のほとんどは絶縁性若しくは半絶縁性を
示すことから係る本発明に於いて、適用可能なπ電子準
位をもつ群を有する有機材料は著しく多岐にわたる。Since most organic materials generally exhibit insulating or semi-insulating properties, there is a wide variety of organic materials having a group having a π-electron level that can be applied to the present invention.
本発明に好適な高分子材料としては、例えばポリアクリ
ル酸誘導体等の付加重合体、ポリイミド等の縮合重合体
、ナイロン等の開環重合体、バクテリオロドプシン等の
生体高分子が挙げられる。Examples of polymeric materials suitable for the present invention include addition polymers such as polyacrylic acid derivatives, condensation polymers such as polyimide, ring-opening polymers such as nylon, and biopolymers such as bacteriorhodopsin.
有機絶縁層の形成に関しては、具体的には蒸着法やクラ
スターイオンビーム法等の適用も可能であるが、制御性
、容易性そして再現性から公知の従来技術の中ではLB
法が極めて好適である。Regarding the formation of the organic insulating layer, it is possible to specifically apply the vapor deposition method and the cluster ion beam method, but among the known conventional techniques, LB is preferred due to its controllability, ease, and reproducibility
The method is highly preferred.
このLB法によれば、1分子中に疎水性部位と親水性部
位とを有する有機化合物の単分子膜またはその累積膜を
基板上に容易に形成することができ、分子オーダの厚み
を有し、かつ大面積にわたって均一、均質な有機超薄膜
を安定に供給することができる。According to this LB method, a monomolecular film of an organic compound having a hydrophobic site and a hydrophilic site in one molecule or a cumulative film thereof can be easily formed on a substrate, and has a thickness on the order of a molecule. , and can stably supply a uniform and homogeneous ultra-thin organic film over a large area.
LB法は、分子内に親水性部位と疎水性部位とを有する
構造の分子において、両者のバランス(両親媒性のバラ
ンス)が適度に保たれている時、分子は水面上で親水性
基を下に向けて単分子の層になることを利用して単分子
膜またはその累積膜を作成する方法である。The LB method is a molecule with a structure that has a hydrophilic site and a hydrophobic site, and when the balance between the two (amphiphilic balance) is maintained appropriately, the molecule has a hydrophilic group on the water surface. This is a method of creating a monomolecular film or a cumulative film thereof by utilizing the fact that the monomolecular layer forms downward.
疎水性部位を構成する基としては、一般に広く知られて
いる飽和及び不飽和炭化水素基や縮合多環芳香族基及び
鎖状多環フェニル基等の各種疎水基が挙げられる。これ
らは各々単独又はその複数が組み合わされて疎水性部分
を構成する。一方、親水性部分の構成要素として最も代
表的なものは、例えばカルボキシル基、エステル基、酸
アミド基。Examples of the group constituting the hydrophobic moiety include various hydrophobic groups such as generally widely known saturated and unsaturated hydrocarbon groups, fused polycyclic aromatic groups, and chain polycyclic phenyl groups. Each of these constitutes a hydrophobic portion singly or in combination. On the other hand, the most typical constituent elements of the hydrophilic moiety are, for example, carboxyl groups, ester groups, and acid amide groups.
イミド基、ヒドロキシル基、更にはアミノ基(1゜2.
3級及び4級)等の親水性基等が挙げられる。Imide groups, hydroxyl groups, and even amino groups (1°2.
Examples include hydrophilic groups such as tertiary and quaternary).
これらも各々単独又はその複数が組み合わされて上記分
子の親水性部分を構成する。These also constitute the hydrophilic portion of the above molecule either singly or in combination.
、:れらの疎水性基と親水性基をバランス良く併有して
いれば、水面上で単分子膜を形成することが可能であり
、本発明に対して極めて好適な材料となる。, : If these hydrophobic groups and hydrophilic groups are present in a well-balanced manner, it is possible to form a monomolecular film on the water surface, making it an extremely suitable material for the present invention.
具体例としては、例えば下記の如き高分子等が挙げられ
る。Specific examples include the following polymers.
[I]付加重合体 l)ポリアクリル酸 R。[I] Addition polymer l) Polyacrylic acid R.
2)ポリアクリル酸エステル ト1 3)アクリル酸コポリマー ト1 4)アクリル酸エステルコポリマー 5)ポリビニルアセテート ト1 OCOCHs 6)酢酸ビニルコポリマー R。2) Polyacrylic acid ester 1 3) Acrylic acid copolymer 1 4) Acrylic ester copolymer 5) Polyvinyl acetate 1 OCOCHs 6) Vinyl acetate copolymer R.
〔■〕縮合重合体
(III)開環重合体
l)ポリエチレンオキシド
ここでR1は前述のσ電子準位をもつ群に相当したもの
で、しかも水面上で単分子膜を形成しやすくするために
導入された長鎖アルキル基で、その炭素数nは5≦n≦
30が好適である。[■] Condensation polymer (III) Ring-opening polymer l) Polyethylene oxide Here, R1 corresponds to the group with the above-mentioned σ electron level, and in order to facilitate the formation of a monomolecular film on the water surface. The introduced long-chain alkyl group, the number of carbon atoms n is 5≦n≦
30 is preferred.
またR2は短鎖アルキル基であり、炭素数nは1≦n≦
4である。重合度mは100≦m≦5000が好適であ
る。Further, R2 is a short-chain alkyl group, and the number of carbon atoms n is 1≦n≦
It is 4. The degree of polymerization m is preferably 100≦m≦5000.
以上具体例として挙げた化合物は基本構造のみであり、
これら高分子の種々な置換体も本発明に於いて好適であ
ることは言うにおよばない。The compounds mentioned above as specific examples are only basic structures,
Needless to say, various substituted forms of these polymers are also suitable in the present invention.
尚、上記以外でもLB法に適している高分子材料であれ
ば、本発明に好適なのは言うまでもない。It goes without saying that any polymer material other than those mentioned above is suitable for the present invention as long as it is suitable for the LB method.
例えば近年研究が盛んになりつつある生体材料(例えば
バクテリオロドプシンやチトクロームC)や合成ポリペ
プチド(PBLGなど)等も適用が可能である。係る両
親媒性の分子は水面上で親水基を下に向けて単分子の層
を形成する。このとき、水面上の単分子層は二次元系の
特徴を有し、分子がまばらに散開しているときは、一分
子当たり面積Aと表面圧πとの間に二次元理想気体の式
、π A=kT
が成り立ち“気体膜”となる。ここに、kはボルツマン
定数、Tは絶対温度である。Aを十分小さくすれば分子
間相互作用が強まり、二次元固体の“凝縮膜(または固
体膜)”になる。凝縮膜はガラスや樹脂の如き種々の材
質や形状を有する任意の物体の表面へ一層ずつ移すこと
ができる。この方法を用いて、単分子膜またはその累積
膜を形成し、これを本発明が示すスイッチング素子用の
周期的な層構造を有する絶縁層として使用することがで
きる。For example, biological materials (such as bacteriorhodopsin and cytochrome C) and synthetic polypeptides (such as PBLG), which have been actively researched in recent years, can also be applied. Such amphiphilic molecules form a monomolecular layer on the water surface with the hydrophilic groups facing downward. At this time, the monomolecular layer on the water surface has the characteristics of a two-dimensional system, and when the molecules are sparsely dispersed, the two-dimensional ideal gas equation is expressed between the area A per molecule and the surface pressure π. π A=kT holds true, resulting in a "gas film". Here, k is Boltzmann's constant and T is absolute temperature. If A is made sufficiently small, the intermolecular interaction becomes stronger, resulting in a two-dimensional solid "condensation film (or solid film)." The condensed film can be transferred layer by layer onto the surface of arbitrary objects having various materials and shapes, such as glass and resin. Using this method, a monomolecular film or a cumulative film thereof can be formed and used as an insulating layer having a periodic layer structure for a switching element according to the present invention.
具体的な製法としては、例えば以下に示す方法を挙げる
ことができる。As a specific manufacturing method, for example, the method shown below can be mentioned.
所望の高分子化合物をクロロホルム、ベンゼン。Chloroform and benzene for the desired polymer compound.
アセトニトリル、ジメチルアセトアミド等の溶剤に溶解
させる。次に添付図面の第1図に示す如き適当な装置を
用いて、係る溶液を水相l上に展開させて有機化合物を
膜状に形成させる。Dissolve in a solvent such as acetonitrile or dimethylacetamide. Next, using a suitable apparatus as shown in FIG. 1 of the accompanying drawings, the solution is spread on the aqueous phase 1 to form a film of the organic compound.
次にこの展開層が水相上を自由に拡散して広がりすぎな
いように仕切板(または浮子)3を設け、展開面積を制
限して膜物質の集合状態を制御し、その集合状態に比例
した表面圧πを得る。この仕切板3を動かし、展開面積
を縮小して膜物質の集合状態を制御し、表面圧を徐々に
上昇させ、膜の製造に適する表面圧πを設定することが
できる。Next, a partition plate (or float) 3 is provided to prevent this spread layer from spreading freely on the water phase and spreading too much, and by limiting the spread area, the state of aggregation of the membrane material is controlled, and it is proportional to the state of aggregation. Obtain the surface pressure π. By moving the partition plate 3, the developed area can be reduced to control the aggregation state of the membrane material, and the surface pressure can be gradually increased to set the surface pressure π suitable for membrane production.
この表面圧を維持しながら、静かに清浄な基板2を垂直
に上昇又は下降させることにより有機化合物の単分子膜
の基板2上に移し取られる。このような単分子膜は第2
a図または第2b図に模式的に示す如く分子が秩序正し
く配列した膜である。While maintaining this surface pressure, the clean substrate 2 is gently raised or lowered vertically to be transferred onto the organic compound monomolecular film substrate 2. Such a monolayer
As schematically shown in Figure a or Figure 2b, it is a film in which molecules are arranged in an orderly manner.
単分子膜は以上で製造されるが、前記の操作を繰り返す
ことにより所望の累積数の累積膜が形成される。単分子
膜を基板上に移すには、上述した垂直浸漬法の他、水平
付着法9回転円筒法等の方法でも可能である。A monomolecular film is produced as described above, and by repeating the above operations, a desired cumulative number of films can be formed. In addition to the above-mentioned vertical dipping method, the monomolecular film can be transferred onto the substrate by methods such as a horizontal deposition method, a 9-turn cylinder method, and the like.
水平付着法は、基板を水面に水平に接触させて単分子膜
を移し取る方法であり、回転円筒法は円筒形の基板を水
面上を回転させて単分子膜を基板表面に移し取る方法で
ある。The horizontal deposition method is a method in which a monomolecular film is transferred by bringing the substrate into horizontal contact with the water surface, and the rotating cylinder method is a method in which a cylindrical substrate is rotated above the water surface to transfer the monomolecular film onto the substrate surface. be.
前述した垂直浸漬法では、表面が親水性である基板を水
面を横切る方向に水中から引き上げると有機化合物の親
水性基が基板側に向いた有機化合物の単分子膜が基板上
に形成される(第2b図)。In the vertical immersion method described above, when a substrate with a hydrophilic surface is lifted out of water in a direction across the water surface, a monomolecular film of an organic compound with the hydrophilic groups of the organic compound facing the substrate is formed on the substrate ( Figure 2b).
前述のように基板を上下させると、各行程ごとに一枚ず
つ単分子膜が積み重なって累積膜が形成される。成膜分
子の向きが引上行程と浸漬行程で逆になるので、この方
法によると単分子膜の各層間は有機化合物の疎水基と疎
水基が向かいあうY型膜が形成される(第3a図)。こ
れに対し、水平付着法は、有機化合物の疎水性基が基板
側に向いた単分子膜が基板上に形成される(第2a図)
。When the substrate is moved up and down as described above, one monomolecular film is stacked on top of the other at each step, forming a cumulative film. Since the direction of the film-forming molecules is reversed between the pulling process and the dipping process, this method forms a Y-shaped film in which the hydrophobic groups of the organic compound face each other between each layer of the monomolecular film (Figure 3a). ). In contrast, in the horizontal deposition method, a monomolecular film with the hydrophobic groups of the organic compound facing the substrate is formed on the substrate (Figure 2a).
.
この方法では、単分子膜を累積しても成膜分子の向きの
交代はなく全ての層において、疎水性基が基板側に向い
たX型膜が形成される(第3b図)。In this method, even if monomolecular films are accumulated, there is no change in the direction of the film-forming molecules, and an X-shaped film is formed in which the hydrophobic groups face the substrate in all layers (FIG. 3b).
反対に全ての層において親水性基が基板側に向いた累積
膜はZ型膜と呼ばれる(第3c図)。On the other hand, a cumulative film in which the hydrophilic groups in all layers face the substrate side is called a Z-type film (Figure 3c).
単分子膜を基板上に移す方法は、上記方法に限定される
わけではなく、大面積基板を用いる時には、ロールから
水相中に基板を押し出していく方法なども採り得る。ま
た、前述した親水性基および疎水性基の基板への向きは
原則であり、基板の表面処理等によって変えることもで
きる。The method of transferring the monomolecular film onto the substrate is not limited to the above method, and when using a large-area substrate, a method of extruding the substrate from a roll into an aqueous phase may also be adopted. Further, the directions of the hydrophilic groups and hydrophobic groups described above toward the substrate are in principle, and can be changed by surface treatment of the substrate, etc.
以上の如くして有機化合物の単分子膜またはその累積膜
からなるポテンシャル障壁層が基板上に形成される。As described above, a potential barrier layer consisting of a monomolecular film of an organic compound or a cumulative film thereof is formed on the substrate.
本発明において、上記の如き無材及び有機材料が積層さ
れた薄膜を支持するための基板は、金属。In the present invention, the substrate for supporting the thin film in which the above-mentioned inorganic and organic materials are laminated is metal.
ガラス、セラミックス、プラスチック材料等いずれの材
料でもよく、更に耐熱性の著しく低い生体材料も使用で
きる。Any material such as glass, ceramics, or plastic material may be used, and biomaterials with extremely low heat resistance may also be used.
上記の如き基板は、任意の形状でよく平板状であるのが
好ましいが、平板に何ら限定されない。The above-mentioned substrate may have any shape and is preferably flat, but is not limited to a flat plate.
すなわち前記成膜法においては、基板の表面がいかなる
形状であっても、その形状通りに膜を形成し得る利点を
有するからである。That is, the film forming method has the advantage that a film can be formed in accordance with the shape of the surface of the substrate, no matter what shape the surface of the substrate has.
またLB法によれば分子オーダーで絶縁層の層厚を自由
に制御できるが、本発明に於いては数人〜数1000人
の層厚のものにスイッチング特性が発現されているが、
スイッチング特性上好ましくはlOλ〜1000人の範
囲の層厚をもつものが良い。Furthermore, according to the LB method, the layer thickness of the insulating layer can be freely controlled on the molecular order, but in the present invention, switching characteristics are expressed in layers with a thickness of several to several thousand layers.
In terms of switching characteristics, it is preferable to have a layer thickness in the range of lOλ to 1000 layers.
一方、係るLB膜を挟持する電極材料も高い伝導性を有
するものであれば良(、例えばAu、 Pt。On the other hand, the material for the electrodes that sandwich the LB film may be any material as long as it has high conductivity (for example, Au, Pt, etc.).
Ag、 Pd、 Al4. In、 Sn、 Pb
などの金属やこれらの合金、さらにはグラファイトやシ
リサイド、またさらにはITOなどの導電性酸化物を始
めとして数多くの材料が挙げられ、これらの本発明への
適用が考えられる。係る材料を用いた電極形成法として
も従来公知の薄膜技術で充分である。また基板上に直接
形成される電極材料は表面がLB膜形成の際、絶縁性の
酸化膜をつくらない導電材料、例えば貴金属やITOな
どの酸化物導電体を用いることが好ましい。Ag, Pd, Al4. In, Sn, Pb
There are many materials including metals such as , alloys thereof, graphite, silicide, and even conductive oxides such as ITO, and these materials can be considered to be applied to the present invention. As a method for forming electrodes using such materials, conventionally known thin film techniques are sufficient. Further, as for the electrode material directly formed on the substrate, it is preferable to use a conductive material that does not form an insulating oxide film on the surface when forming the LB film, such as a noble metal or an oxide conductor such as ITO.
以下実施例により詳細な説明を行う。A detailed explanation will be given below using examples.
〔実施例1〕
ヘキサメチルジシラザン(HMDS)の飽和蒸気中に一
昼夜放置して疎水処理したガラス基板(コーニング社製
#7059)上に下引き層としてCrを真空蒸着法によ
り厚さ500人堆積させ、更にAuを同法により蒸着(
膜厚1000人)し、幅1 m mのストライプ状の下
地電極を形成した。係る基板を担体としてLB法により
ポリイミドの単分子膜形成法の詳細を記す。[Example 1] Cr was deposited to a thickness of 500 mm as an undercoat layer by vacuum evaporation on a glass substrate (#7059 manufactured by Corning Inc.) that had been hydrophobically treated by leaving it in saturated vapor of hexamethyldisilazane (HMDS) overnight. Then, Au was further deposited by the same method (
A striped base electrode with a thickness of 1 mm and a width of 1 mm was formed. Details of a method for forming a monomolecular film of polyimide by the LB method using such a substrate as a carrier will be described.
ポリアミック酸(分子量約20万)を濃度I X 10
−”%(vol/vol)で溶かしたジメチルアセトア
ミド溶液を純水、水温20℃の水相上に展開し、水面上
に単分子膜を形成した。この単分子膜の表面圧を25
m N / mまで高め、更にこれを一定に保ちながら
前記基板を水面に横切る方向に5mm/minで浸漬、
引き上げを行い、Y型単分子膜の累積を行った。係る操
作を繰り返すことにより12. 18.24゜30、
36. 40層の6種類の累積膜を作成した。Polyamic acid (molecular weight approximately 200,000) at a concentration of I x 10
-''% (vol/vol) dimethylacetamide solution was spread on an aqueous phase of pure water at a water temperature of 20°C to form a monomolecular film on the water surface.The surface pressure of this monomolecular film was set to 25%.
mN/m, and further immersing the substrate at 5 mm/min in the direction across the water surface while keeping this constant;
Pulling was performed to accumulate a Y-type monomolecular film. By repeating such operations, 12. 18.24°30,
36. Six types of cumulative films with 40 layers were created.
更にこれらの膜を300℃で10分加熱を行うことによ
りポリイミドにした。Further, these films were heated at 300° C. for 10 minutes to form polyimide.
次に係る膜面上に下地電極と直交するように幅1mmの
ストライブ状のAI!電極(膜厚1500人)を基板温
度を室温以下に保持し真空蒸着し上部電極とした。Next, a striped AI with a width of 1 mm is formed on the film surface so as to be perpendicular to the base electrode! An electrode (film thickness: 1,500 yen) was vacuum deposited while keeping the substrate temperature below room temperature to form the upper electrode.
以上の様にして作成した試料の上下電極間に電圧を印加
したときの電流特性(Vl特性)を測定した。その他の
試料ではこれまで知られていないメモリー性のスイッチ
ング特性を観測した(第5図)。The current characteristics (Vl characteristics) when a voltage was applied between the upper and lower electrodes of the sample prepared as described above were measured. In other samples, previously unknown memory switching characteristics were observed (Figure 5).
更に第6図に示すような安定なON状態(抵抗値数十Ω
)とOFF状態(抵抗値MΩ以上)をつ(ることができ
、0N−4OFFへのスイッチングは一定のシキ値電圧
(1〜2v程度720層)を示し、OFF→ONへのス
イッチングは一2〜5V程度でおこり、またスイッチン
グ速度は100nsec以下で0N10FF比(ON状
態とOFF状態の抵抗値の比)が5桁以上であった。Furthermore, a stable ON state (resistance value of several tens of Ω) as shown in Figure 6
) and the OFF state (resistance value MΩ or more), switching from 0N to 4OFF shows a constant voltage (about 1 to 2V, 720 layers), and switching from OFF to ON shows a voltage of -2 This occurred at about 5 V, and the switching speed was 100 nsec or less, and the 0N10FF ratio (ratio of resistance values in ON state and OFF state) was more than 5 digits.
スイッチングのシキイ値電圧は絶縁層の層数が増すと高
(なる傾向を示した。The switching threshold voltage tended to increase as the number of insulating layers increased.
尚、ポリイミド−層あたりの厚さはエリプソメトリ−法
により約3.6人と求められた。The thickness of each polyimide layer was determined to be about 3.6 by ellipsometry.
〔実施例2〕
ITOを従来公知の方法により1 m m巾のストライ
ブ状にエツチングした基板を担体としてLB法によりポ
リ−α−n−ヘキサデシルアクリル酸の単分子膜の累積
を行った。ポリ−α−n−ヘキサデシルアクリル酸(分
子量的lO万)を濃度I X 10−3%(v o I
/ v o I )で溶かしたベンゼン溶液を純水。[Example 2] A monomolecular film of poly-α-n-hexadecyl acrylic acid was deposited by the LB method using as a carrier a substrate in which ITO was etched into stripes of 1 mm width by a conventionally known method. Poly-α-n-hexadecyl acrylic acid (molecular weight: 10,000) was prepared at a concentration of I x 10-3% (vo I
/ v o I) in pure water.
水温20℃の水相上に展開し、更にこれを一定に保ちな
がら前記基板を水面に横切る方向に5 m m /mi
nで浸漬引き上げを行い、Y型単分子膜の累積を行った
。係る操作を繰り返すことにより7. 11゜15、
21層の4種類の累積膜を作成した。It was developed on a water phase with a water temperature of 20°C, and while keeping this temperature constant, the substrate was spread at a rate of 5 mm/mi in the direction across the water surface.
Dipping and pulling was performed at n, and a Y-type monomolecular film was accumulated. By repeating such operations, 7. 11°15,
Four types of cumulative films with 21 layers were created.
以上の様に作成した試料を実施例1と同様にしてVl特
性を測定した結果、作成したすべての試料とメモリー性
のスイッチング特性を観測した(第5図)。The Vl characteristics of the samples prepared as described above were measured in the same manner as in Example 1, and as a result, the memory switching characteristics of all the samples prepared were observed (FIG. 5).
シキイ値電圧は上部電極の違いによらずほぼ一定に値を
示した。The threshold voltage remained almost constant regardless of the difference in the upper electrode.
またスイッチング速度は1oonsecであった。Further, the switching speed was 1 oonsec.
〔実施例3〕
ヘキサメチルジシラザン(HMDS)の飽和蒸気中に一
昼夜放置して疎水処理したガラス基板(コーニング社製
#7059)上に下引き層としてCrを真空蒸着法によ
り厚さ500人堆積させ、更にAuを同法により蒸着(
膜厚1000人)し、幅1mmのストライブ状の下地電
極を形成した。係る基板を担体としてLB法によりポリ
−n−へキシルメタクリル酸(分子量約50万)の単分
子膜の形成法の詳細を記す。[Example 3] Cr was deposited to a thickness of 500 mm as an undercoat layer by vacuum evaporation on a glass substrate (#7059 manufactured by Corning) that had been hydrophobically treated by being left in saturated vapor of hexamethyldisilazane (HMDS) overnight. Then, Au was further deposited by the same method (
A strip-shaped base electrode with a width of 1 mm was formed. Details of a method for forming a monomolecular film of poly-n-hexyl methacrylic acid (molecular weight approximately 500,000) by the LB method using such a substrate as a carrier will be described.
ポリ−〇−へキシルメタクリル酸(分子量約50万)を
濃度I X 10−3%(vol/vol)で溶かした
ベンゼン溶液を純水、水温20℃の水相上に展開し、水
面上に単分子膜を形成した。この単分子膜の表面圧を1
5 m N / mまで高め、更にこれを一定に保ちな
がら前記基板を水面に横切る方向に3 m m /mi
nで浸漬、引き上げを行い、Y型単分子膜の累積を行っ
た。係る操作を繰り返すことにより12、 18.24
.30.36.42層の6種類の累積膜を作成した。A benzene solution containing poly-〇-hexyl methacrylic acid (molecular weight approximately 500,000) dissolved at a concentration I x 10-3% (vol/vol) is spread on a water phase of pure water at a water temperature of 20°C, and poured onto the water surface. A monolayer was formed. The surface pressure of this monomolecular film is 1
5 m N/m, and while keeping this constant, the substrate was further increased to 3 mm/mi in the direction across the water surface.
A Y-type monomolecular film was accumulated by dipping and pulling up at n. By repeating such operations, 12, 18.24
.. Six types of cumulative films with 30, 36, and 42 layers were created.
以上の様に作成した試料を実施例1と同様にしてVI特
性を測定した結果、作成したすべての試料とメモリー性
のスイッチング特性を観測した(第5図)。The VI characteristics of the samples prepared as described above were measured in the same manner as in Example 1, and as a result, the memory switching characteristics of all the samples prepared were observed (FIG. 5).
シキイ値電圧は上部電極の違いによらずほぼ一定に値を
示した。The threshold voltage remained almost constant regardless of the difference in the upper electrode.
またスイッチング速度は100nsecであった。Moreover, the switching speed was 100 nsec.
以上述べてきた実施例中では絶縁層の形成にLB法を使
用してきたが、極めて薄(均一な絶縁性の有機薄膜が作
成できる成膜法であればLB法に限らず使用可能である
。具体的には真空蒸着法や電解重合法、CVD法等が挙
げられ、使用可能な有機材料の範囲が広がる。In the embodiments described above, the LB method has been used to form the insulating layer, but any film forming method that can form an extremely thin (uniform insulating) organic thin film can be used other than the LB method. Specifically, vacuum evaporation methods, electrolytic polymerization methods, CVD methods, etc. can be mentioned, and the range of usable organic materials is expanded.
電極の形成に関しても既に述べている様に、有機薄膜層
上に均一な薄膜を作成しうる成膜法であれば使用可能で
あり、真空蒸着法やスパッタ法に限られるものではない
。Regarding the formation of the electrode, as already mentioned, any film forming method that can form a uniform thin film on the organic thin film layer can be used, and is not limited to vacuum evaporation or sputtering.
更に基板材料やその形状も本発明は何ら限定するもので
はない。Furthermore, the present invention does not limit the substrate material or its shape in any way.
■ 高分子、単分子膜をLB法により累積した薄膜を絶
縁層としたMIM構造素子に於いて、従来のMIM素子
にはみられないメモリー性のスイッチング特性が得られ
ることを示した。(2) It has been shown that an MIM structure device with an insulating layer made of a thin film of polymer or monomolecular film deposited by the LB method can provide memory-like switching characteristics not seen in conventional MIM devices.
■ 単分子膜の累積によって絶縁層を形成する方法の為
、分子オーダ(数人〜数十人)による膜厚制御が容易に
実現できた。また制御性が優れている為、素子を形成す
るとき再現性が高く生産性に富む。■ Because the insulating layer is formed by accumulating monomolecular films, film thickness control can be easily achieved on the molecular order (several to dozens of people). Furthermore, since the controllability is excellent, the reproducibility and productivity are high when forming elements.
■ 無機材料のみからなるMIM素子に比べ材料の自由
度が高く、将来、分子エレクトロニクス、■ バイオエ
レクトロニクス等生体との親和性の高い素子が提供でき
る。■ It has a higher degree of material freedom than MIM elements made of only inorganic materials, and in the future it will be possible to provide devices with high affinity with living organisms, such as molecular electronics and ■ bioelectronics.
■ 材料に高分子化合物を用いているため、機械強度・
耐熱性・耐溶剤性に優れている。■ Mechanical strength and
Excellent heat resistance and solvent resistance.
第1図は本発明の有機色素絶縁層をLB法によって形成
する方法を図解的に示す説明図である。第2a図と第2
b図は単分子膜の模式図であり、第3a図、第3b図と
第3C図は累積膜の模式図である。
第4図は本発明のMIM素子の具体例の構成概略図を示
す。また第5図は係る素子に於いて得られた電気的特性
(Vl特性)を示す特性図で、第6図は係る素子に於い
て確認されたON状態及びOFF状態の電気的特性図を
示すものである。
l・・・・・・・・・・・・・・・・・・水相2・・・
・・・・・・・・・・・・・・・基板3・・・・・・・
・・・・・・・・・・・浮子4・・・・・・・・・・・
・・・・単分子膜5・・・・・・・・・・・・・・・・
・累積膜6・・・・・・・・・・・・・・親水性部位7
・・・・・・・・・・・・・・疎水性部位8・・・・・
・・・・・・・・・・上部電極9・・・・・・・・・・
・下部(下地)電極lO・・・・・・単分子累積膜層(
LB膜層)タ
第5図FIG. 1 is an explanatory view schematically showing a method of forming an organic dye insulating layer of the present invention by the LB method. Figures 2a and 2
Figure b is a schematic diagram of a monomolecular film, and Figures 3a, 3b, and 3c are schematic diagrams of a cumulative film. FIG. 4 shows a schematic configuration diagram of a specific example of the MIM element of the present invention. In addition, Fig. 5 is a characteristic diagram showing the electrical characteristics (Vl characteristics) obtained in the device, and Fig. 6 is a diagram showing the electrical characteristics in the ON state and OFF state confirmed in the device. It is something. l・・・・・・・・・・・・・・・Aqueous phase 2...
・・・・・・・・・・・・・・・ Board 3・・・・・・・
・・・・・・・・・・・・Float 4・・・・・・・・・・・・
...Monolayer film 5...
・Cumulative film 6・・・・・・・・・・・・Hydrophilic part 7
・・・・・・・・・・・・・・・Hydrophobic part 8・・・・・・
・・・・・・・・・Top electrode 9・・・・・・・・・・
・Lower (underlying) electrode lO... Monomolecular cumulative film layer (
LB film layer) Figure 5
Claims (2)
し、スイッチング特性に対してメモリー性を有すること
を特徴とするスイッチング素子。(1) A switching element having a periodic layer structure of an organic insulator between a pair of electrodes, and having a memory property for switching characteristics.
位のみをもつ群とを有する高分子化合物である特許請求
の範囲第1項記載のスイッチング素子。(2) The switching element according to claim 1, wherein the organic insulator is a polymer compound having a group having a π electron level and a group having only a σ electron level.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62324319A JPH01165165A (en) | 1987-12-21 | 1987-12-21 | switching element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62324319A JPH01165165A (en) | 1987-12-21 | 1987-12-21 | switching element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01165165A true JPH01165165A (en) | 1989-06-29 |
Family
ID=18164463
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62324319A Pending JPH01165165A (en) | 1987-12-21 | 1987-12-21 | switching element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01165165A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010157769A (en) * | 2003-10-01 | 2010-07-15 | Spansion Llc | Method of processing organic memory device |
-
1987
- 1987-12-21 JP JP62324319A patent/JPH01165165A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010157769A (en) * | 2003-10-01 | 2010-07-15 | Spansion Llc | Method of processing organic memory device |
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