JPH01165653A - Resin composition for semiconductor sealing - Google Patents
Resin composition for semiconductor sealingInfo
- Publication number
- JPH01165653A JPH01165653A JP32370287A JP32370287A JPH01165653A JP H01165653 A JPH01165653 A JP H01165653A JP 32370287 A JP32370287 A JP 32370287A JP 32370287 A JP32370287 A JP 32370287A JP H01165653 A JPH01165653 A JP H01165653A
- Authority
- JP
- Japan
- Prior art keywords
- organopolysiloxane
- epoxy resin
- resin
- resin composition
- formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 239000011342 resin composition Substances 0.000 title claims abstract description 11
- 238000007789 sealing Methods 0.000 title abstract description 3
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 24
- 239000003822 epoxy resin Substances 0.000 claims abstract description 22
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 22
- 150000002170 ethers Chemical class 0.000 claims abstract description 7
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims abstract description 3
- 150000003058 platinum compounds Chemical class 0.000 claims abstract description 3
- 125000000217 alkyl group Chemical group 0.000 claims abstract 4
- 125000001183 hydrocarbyl group Chemical group 0.000 claims abstract 4
- 239000004843 novolac epoxy resin Substances 0.000 claims abstract 4
- 238000010438 heat treatment Methods 0.000 claims abstract 2
- 238000005538 encapsulation Methods 0.000 claims description 12
- 229920003986 novolac Polymers 0.000 claims description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 239000003054 catalyst Substances 0.000 claims description 2
- 238000006459 hydrosilylation reaction Methods 0.000 claims description 2
- 229930195735 unsaturated hydrocarbon Natural products 0.000 abstract 1
- 229920005989 resin Polymers 0.000 description 18
- 239000011347 resin Substances 0.000 description 18
- 239000000203 mixture Substances 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 9
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 5
- 230000000740 bleeding effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 125000000524 functional group Chemical group 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000004898 kneading Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000001879 gelation Methods 0.000 description 2
- 239000002075 main ingredient Substances 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- -1 polysiloxane Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical class C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- 229910015900 BF3 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- ACIAHEMYLLBZOI-ZZXKWVIFSA-N Unsaturated alcohol Chemical compound CC\C(CO)=C/C ACIAHEMYLLBZOI-ZZXKWVIFSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical class C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ブリード現象の全くない海島構造を有するオ
ルガノポリシロキサン変性ノボラック系エポキシ樹脂を
用いた低応力半専体封止用樹脂組成物に関するものであ
る。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a low-stress semi-dedicated encapsulating resin composition using an organopolysiloxane-modified novolak epoxy resin having a sea-island structure with no bleeding phenomenon. It is something.
従来、半導体素子を外部環境から保護する目的で成され
る樹脂封止としてはエポキシ樹脂組成物が広く用いられ
てきた。この場合、半導体デバイスの信幀性向上のため
、−Ｃに樹脂系としてはノボラ、り系エポキシ樹脂のフ
ェノールノボラック硬化樹脂系が用いられており、具体
的にはこのような樹脂系に硬化促進剤、無機充填剤、カ
ップリング剤、そして顔料等を混練して得られる組成物
を用いてトランスファー成形により封止を行なう方法が
広く用いられている。Conventionally, epoxy resin compositions have been widely used for resin encapsulation for the purpose of protecting semiconductor elements from the external environment. In this case, in order to improve the reliability of semiconductor devices, a novola or phenol novolac curing resin system of phosphor-based epoxy resin is used as the resin system for -C. A widely used method is to perform sealing by transfer molding using a composition obtained by kneading a filler, an inorganic filler, a coupling agent, a pigment, and the like.
しかし、最近の半導体素子の記憶容量増大指向に伴ない
、素子内配線高密度化、素子の大型薄型化が進み、封止
材に要求される性能も大きく変化しつつある。すなわち
、半導体ＩＣ基板であるシリコン基板と封止硬化成形物
間に熱膨張係数差に起因して発生する応力に起因して生
じる樹脂層のクラック、ＩＣアルミ配線の変形、断線等
が問題化している。However, with the recent tendency to increase the storage capacity of semiconductor devices, the density of wiring within devices has increased, and devices have become larger and thinner, and the performance required of sealing materials is also changing significantly. In other words, problems such as cracks in the resin layer, deformation of IC aluminum wiring, disconnection, etc. that occur due to stress generated due to the difference in coefficient of thermal expansion between the silicon substrate (semiconductor IC substrate) and the encapsulated cured product have become problems. There is.
これらの問題を解消する方法として、オルガノポリシロ
キサン粉末を成形材料中に分散混合した組成物、又はオ
ルガノポリシロキサンを配合混練時に添加分散さゼた組
成物等が提案されている。As methods for solving these problems, compositions in which organopolysiloxane powder is dispersed and mixed into a molding material, or compositions in which organopolysiloxane is added and dispersed during compounding and kneading have been proposed.
しかしながら、オルガノポリシロキサン粉末を分散γｉ
２合する場合、樹脂との漏れ密着性に欠け、硬化樹脂中
にボイドが発生しやすいとか、サンディング切削加工時
に脱落しやすく平滑表面が得難いとかまた成形時の流動
性が悪いといった問題点が生しる。又、オルガノポリシ
ロキサンオイルを添加分散させる場合、成形時にブリー
ドしてしまうための型汚れ、成形物表面の印刷性が悪い
といった難点が生じてしまう。However, dispersing organopolysiloxane powder γi
When bonding, there are problems such as lack of leakage adhesion with the resin, voids are likely to occur in the cured resin, easy to fall off during sanding, difficult to obtain a smooth surface, and poor fluidity during molding. Sign. Furthermore, when organopolysiloxane oil is added and dispersed, problems arise such as mold staining due to bleeding during molding and poor printability on the surface of the molded product.
従って、いずれも添加量も制限され、その効果を向上さ
せることができない。Therefore, the amount of addition is limited in either case, and the effects cannot be improved.
さらに、これらの欠点を除くため、種々の官能基を有す
るオルガノポリシロキサンを用いてエポキシ基と反応さ
せるとか、ノボラック型エポキシ樹脂の一部に官能基を
導入しこれとオルガノポリシロキサン官能基を反応させ
るなどの試みがなされている。Furthermore, in order to eliminate these drawbacks, organopolysiloxanes having various functional groups may be used to react with epoxy groups, or functional groups may be introduced into a part of the novolac type epoxy resin and the organopolysiloxane functional groups may be reacted with the functional groups. Attempts are being made to do so.
しかしゲル化を生し易い、相溶性が悪いため反応しない
、また反応後分解しやすいなど問題点解消に至っていな
い０反応によるエポキシ樹脂分子骨格中にオルガノポリ
シロキサンを導入する方法は種々提案されているが、そ
の中でもエポキシ樹脂中に反応性不飽和結合を一部導入
しておき、これとハイドロジエンポリシロキサンを反応
させる、いわゆる−；Ｓ ｉ −Ｃ，−結合により導入
するものが最終的に封止剤としての特性を得る上で効果
的であるとｇ７されている。However, various methods have been proposed for introducing organopolysiloxane into the epoxy resin molecular skeleton by zero-reaction, which have not solved the problems such as easy gelation, poor compatibility and therefore no reaction, and easy decomposition after reaction. However, among these, some reactive unsaturated bonds are introduced into the epoxy resin, and this is reacted with the hydrogen polysiloxane, which is the so-called -;S i -C, - bond. It is rated G7 as being effective in obtaining properties as a sealant.
しかしながら単に一５ｉ−Ｃ−結合による導入であれば
すべて好結果が得られるといったものではな（−３ｉ−
Ｃ−結合はケイ素に近い炭素（特にβ位の炭素）に陰性
原子あるいは原子団が結合しているときはしばしばンＳ
ｉ −Ｃ，−結合の切断が起こり、特にこの現象は湿
度存在下で著しく熱的にも化学的にも不安定であること
が判明した。従ってこのような結合による導入の場合、
半導体素子を１，１人した後の耐湿特性が著しく低下し
てしまうという問題点がある。However, it is not the case that good results can be obtained by simply introducing the -3i-C- bond (-3i-
C-bonds are often formed when a negative atom or atomic group is bonded to a carbon close to silicon (particularly a carbon at the β position).
It has been found that cleavage of the i-C,- bond occurs and that this phenomenon is particularly thermally and chemically unstable in the presence of humidity. Therefore, in the case of introduction by such a combination,
There is a problem in that the moisture resistance properties of the semiconductor device deteriorate significantly after the semiconductor device is heated one by one.
（発明の目的〕
本願発明の目的とするところはブリード現象の全くない
、海島構造を有する変性エポキシ樹脂を用いた低応力半
導体封止用エポキシ樹脂組成物を提供するにある。(Object of the Invention) The object of the present invention is to provide a low-stress epoxy resin composition for semiconductor encapsulation using a modified epoxy resin having a sea-island structure and completely free from bleeding phenomena.
本発明は部分不飽和エーテルノボラック系エポキシ樹脂
と、ハイドロシリル括を含有するオルガノポリシロキサ
ンとのハイドロシリル化反応によって得られるオルガノ
ポリシロキサン変性ノポラ７り系エポキシ樹脂を用いた
オルガノポリシロキサンが均一微粒子状態に分散されて
いることを特徴とする半導体封止用樹脂組成物である。The present invention uses an organopolysiloxane-modified Nopola 7-based epoxy resin obtained by a hydrosilylation reaction between a partially unsaturated ether novolak epoxy resin and an organopolysiloxane containing a hydrosilyl group. This is a resin composition for semiconductor encapsulation, characterized in that it is dispersed in a state.
ここで用いられる部分不飽和エーテルノボラノク系エボ
キン樹脂はフェノールノボラ、クエボキシ樹脂、または
アルキルフェノールノボラフクエボキシ樹脂と不飽和ア
ルコールまたは不飽和基含有フェノール類とで得られる
一部エポキシ凸がアリルエーテル化された樹脂またはフ
ェノールノボラックまたはアルキルフェノールノボラッ
クと不飽和グリシジルエーテルとで得られるノボラック
をエボートノ化した樹脂である。The partially unsaturated ether novolanok-based evokin resin used here is a phenol novola, kueboxy resin, or an alkylphenol novola kueboxy resin, and some epoxy convexes obtained from an unsaturated alcohol or an unsaturated group-containing phenol are allyl. It is a resin obtained by evotonizing an etherified resin or a novolak obtained from a phenol novolak or an alkylphenol novolak and an unsaturated glycidyl ether.
不飽和法の導入率は用いたエポキシ基中の０５〜５＋＊
ｏｌ／％である。導入率が０．５ｍｏｌ／％以下では化
学量論的に反応さ−Ｕるオルガノポリノロキサン量が少
く変性の効果が表われない＊ ５ｍｏ１％以上では、化
学量論的のオルガノポリシロキサンを反応させた場合海
島構造が得難くなる。The introduction rate of the unsaturation method is 05 to 5+* in the epoxy group used.
ol/%. If the introduction rate is less than 0.5 mol/%, the amount of stoichiometrically reacted organopolysiloxane will be small and the modification effect will not appear. If this happens, it will be difficult to obtain a sea-island structure.
オルガノポリシロキサンは１分子中に１〜２０のハ。Organopolysiloxane has 1 to 20 C in one molecule.
イドロジェン基を有するものである。ハイドロジエン基
以外はメチル基、またはメチル基とフェニル基とを有す
るオルガノポリシロキサンである。It has an hydrogen group. It is an organopolysiloxane having a methyl group or a methyl group and a phenyl group other than the hydrogen group.
その重合度は−（−５ｉ−０→−ユニット換算で５０〜
５００であり、好ましくは１００〜２００である。５０
以下であるとオルガノポリシロキサンの凝集力不足であ
り、均−系となってしまいドメインの形成が生じ難り、
シたがってガラス転移点（Ｔｇ）を低下させる結果にな
る。The degree of polymerization is -(-5i-0→-50 to -unit conversion)
500, preferably 100-200. 50
If it is below, the cohesive strength of the organopolysiloxane is insufficient, and the system becomes homogeneous, making it difficult to form domains.
This results in a lower glass transition point (Tg).
５００以上では分子量に対して反応点が極端に少くなり
、反応の完結性に疑問、が生じる。If it is more than 500, the number of reaction points becomes extremely small relative to the molecular weight, and the completeness of the reaction becomes questionable.
ハイドロジエン基はオルガノポリシロキサン１分子中に
２０以上の場合反応時にゲル化を生じてしまう０両末端
のみにハイドロジエン基を有するオルガノポリシロキサ
ンが好ましい。Preferably, the organopolysiloxane has hydrogen groups only at both ends, since gelation occurs during reaction if there are 20 or more hydrogen groups in one molecule of the organopolysiloxane.
本発明の半導体封止用樹脂組成物は上記の部分不飽和エ
ーテルノボランク系エポキシ樹脂とハイドロジエン店含
有オルガノポリシロキサンとを白金化合物系触媒を用い
て反応させる。一般には、塩化白金酸が用いられ、その
添加量は通常、樹脂に対し２０〜５０ｐｐｍ程度である
。The resin composition for semiconductor encapsulation of the present invention is produced by reacting the above partially unsaturated ether novolane epoxy resin with a hydrogen store-containing organopolysiloxane using a platinum compound catalyst. Generally, chloroplatinic acid is used, and the amount added is usually about 20 to 50 ppm based on the resin.
部分不飽和エーテルノボランク系エポキシ樹脂とオルガ
ノポリシロキサンの配合割合はハイドロジエン基の数、
オルガノポリシロキサンの重合度、エポキシ樹脂の不飽
和基の導入率により異なるが、オルガノポリシロキサン
が１０〜５０重量％になるようにするが好ましくは１５
〜３０重量％である。 １０ｆｆｉ量％以下では変性効
果が少なく５０重重量では、海鳥構造が逆転してしまう
場合が多い。The blending ratio of partially unsaturated ether novolanc epoxy resin and organopolysiloxane depends on the number of hydrogen groups,
Although it varies depending on the degree of polymerization of the organopolysiloxane and the rate of introduction of unsaturated groups into the epoxy resin, the amount of organopolysiloxane should be 10 to 50% by weight, but preferably 15% by weight.
~30% by weight. If the amount is less than 10% by weight, the modification effect will be small, and if the amount is 50% by weight, the seabird structure will often be reversed.
得られたオルガノポリシロキサン変性エポキシ樹脂は白
色固体の樹脂であり、オルガノポリシロキサンのブリー
ドは全く認められず粉砕可能である。The obtained organopolysiloxane-modified epoxy resin is a white solid resin, and no bleeding of the organopolysiloxane is observed and it can be pulverized.
これにフェノールノボラック樹脂各種アミン類、イミダ
ゾール類、トリフェニルホスフィン、フン化ホウ素のア
ミン錯体等の硬化促進剤、溶融シリカに代表される充填
剤、ガルナバワックス、ステキシランビ要ルシラン等の
カンプリング剤、ブロム化エポキシ樹脂、三酸化アンチ
モン等の難燃化剤、カーボンブランク等の顔料等の公知
の物質を配合、混合し、これを加熱ロールまたはコニー
ダー等の従来用いられている混練機により溶融混練を行
ない、冷却粉砕して均一混練された半導体封止用エポキ
シ樹脂組成物を得る。In addition, curing accelerators such as phenol novolak resin various amines, imidazoles, triphenylphosphine, and amine complexes of boron fluoride, fillers such as fused silica, camping agents such as guarnauba wax and stexilambisilane, Known substances such as brominated epoxy resin, flame retardants such as antimony trioxide, and pigments such as carbon blank are blended and mixed, and this is melted and kneaded using a conventionally used kneading machine such as a heated roll or a co-kneader. The mixture is cooled and pulverized to obtain a uniformly kneaded epoxy resin composition for semiconductor encapsulation.
本発明の組成物は反応により生成したＳｉとＣとの結合
が強固であるために湿度による切断が生じにくり、熔融
成形に際してオルガノポリシロキサンのブリードが全く
なく、流動性も良好であり、通常のエポキシ樹脂と同様
な条件で成形可能であった。また得られた硬化封止体は
オルガノポリシロキサン変性エポキシ樹脂を用いた効果
により高耐湿性、低応力品であり、マーキング性にも問
題はなく、従来にない優れた半導体封止用樹脂組成物で
あった。The composition of the present invention has a strong bond between Si and C formed by the reaction, so it is difficult to break due to humidity, there is no bleeding of organopolysiloxane during melt molding, and it has good fluidity. It could be molded under the same conditions as epoxy resin. In addition, the obtained cured encapsulation has high moisture resistance and low stress due to the effect of using organopolysiloxane-modified epoxy resin, and there is no problem with marking properties, making it an excellent resin composition for semiconductor encapsulation that has never existed before. Met.
エポキシ当ｆｉ １９９のエポキシクレソ゛−ルノボラ
７り樹脂のエポキシ騙の２モル％を、アリルエーテル化
した樹脂１００ｇ、重合度２００の両末端ハイドロジエ
ンジメチルポリシロキサン２０ｇ、）ルエンＢＯＯｇ、
塩化白金酸の５％インプロパツール溶液１００■を１１
フラスコ中で１００℃２時間反応させ、真空下トルエン
を留去し均一な白色固体を得た。100 g of allyl etherified 2 mol% of epoxy resin of epoxy cresol novola 7 resin with epoxy resin of 199, 20 g of hydrogen-terminated dimethylpolysiloxane with a degree of polymerization of 200, 20 g of luene BOOg,
100 μl of 5% inpropatol solution of chloroplatinic acid to 11
The reaction was carried out in a flask at 100° C. for 2 hours, and toluene was distilled off under vacuum to obtain a uniform white solid.
このオルガノポリシロキサン変性エポキシ４！４脂を主
剤とし、第１表に示すような組成物を熱２本ロールで均
一に溶解混合して半導体封止用樹脂組物とした。Using this organopolysiloxane-modified epoxy 4!4 resin as a main ingredient, the compositions shown in Table 1 were uniformly melted and mixed using two heated rolls to prepare a resin assembly for semiconductor encapsulation.
第 １ 表
〔比 較 例〕
実施例１で用いたオルガノポリシロキサン変性エボキン
樹脂の代りにエポキシ当Ｊｆｔ １９９のエポキシクレ
ゾールノボラック樹脂を主剤とし、第２表に示すような
組成物とし実施例と同様にして得られたものを比較例と
した。Table 1 [Comparative Example] The compositions shown in Table 2 were prepared using epoxy cresol novolac resin of JFT 199 as the main ingredient instead of the organopolysiloxane-modified Evoquin resin used in Example 1, and the same as in Example. The obtained product was used as a comparative example.
第 ２ 表
これらの半導体封止用樹脂組成物を１７５℃、７０ｈｇ
／ｄで９０秒間成形した後、１７５℃４時間硬化した硬
化物の物性を第３表に示す。Table 2 These resin compositions for semiconductor encapsulation were heated at 175°C and 70 hg.
Table 3 shows the physical properties of the cured product, which was molded for 90 seconds at /d and then cured for 4 hours at 175°C.
第 ３ 表
これらの結果より本願発明による半導体封止用樹脂組成
物は従来の特性を損うことなく、弾性率が低く膨張係数
も小さい、優れた低応力半導体封止用樹脂組成物である
。Table 3 From these results, the resin composition for semiconductor encapsulation according to the present invention is an excellent low-stress resin composition for semiconductor encapsulation that has a low elastic modulus and a small coefficient of expansion without impairing conventional properties.
Claims (1)
系エポキシ樹脂と、式（２）で表わされる１ケ以上のハ
イドロシリル基を含有するオルガノポリシロキサンを、
白金化合物系触媒存在下、加熱、ハイドロシリル化反応
を行ない得られるオルガノポリシロキサン変性ノボラッ
ク系エポキシ樹脂を用いたことを特徴とする半導体封止
用樹脂組成物。 ▲数式、化学式、表等があります▼・・・・・・（１） Ｒ＿１：Ｈまたは炭化水素基 Ｒ＿２：エチレン性二重結合を有する炭化水素基ｍ：２
以上の整数 ｎ：ｎ／ｍ＋ｎ＝０．００５〜０．０５ ▲数式、化学式、表等があります▼・・・・・・（２） Ｒ＿３：アルキル基又はフェニル基 Ｒ＿４：水素又はアルキル基 ｌ：０〜２０の整数 ｋ：ｋ＋ｌ＝５０〜５００の整数[Claims] A partially unsaturated ether novolac epoxy resin represented by formula (1) and an organopolysiloxane containing one or more hydrosilyl groups represented by formula (2),
A resin composition for semiconductor encapsulation, characterized in that it uses an organopolysiloxane-modified novolak-based epoxy resin obtained by heating and hydrosilylation reaction in the presence of a platinum compound-based catalyst. ▲There are mathematical formulas, chemical formulas, tables, etc.▼・・・・・・(1) R_1: H or hydrocarbon group R_2: Hydrocarbon group having an ethylenic double bond m: 2
Integer n: n/m+n=0.005-0.05 ▲There are mathematical formulas, chemical formulas, tables, etc.▼・・・・・・(2) R_3: Alkyl group or phenyl group R_4: Hydrogen or alkyl group l: Integer k from 0 to 20: k+l = integer from 50 to 500
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32370287A JPH01165653A (en) | 1987-12-23 | 1987-12-23 | Resin composition for semiconductor sealing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32370287A JPH01165653A (en) | 1987-12-23 | 1987-12-23 | Resin composition for semiconductor sealing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01165653A true JPH01165653A (en) | 1989-06-29 |
Family
ID=18157646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32370287A Pending JPH01165653A (en) | 1987-12-23 | 1987-12-23 | Resin composition for semiconductor sealing |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01165653A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6221241A (en) * | 1985-07-19 | 1987-01-29 | Nec Corp | Semiconductor device |
| JPS6322822A (en) * | 1986-07-15 | 1988-01-30 | Shin Etsu Chem Co Ltd | Silicone-modified epoxy resin and production thereof |
-
1987
- 1987-12-23 JP JP32370287A patent/JPH01165653A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6221241A (en) * | 1985-07-19 | 1987-01-29 | Nec Corp | Semiconductor device |
| JPS6322822A (en) * | 1986-07-15 | 1988-01-30 | Shin Etsu Chem Co Ltd | Silicone-modified epoxy resin and production thereof |
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